JPS6220317A - Jig for ion beam exposure - Google Patents

Abstract

PURPOSE:To eliminate the effect of charged particles and to prevent the deterioration of characteristics of a semiconductor element due to invasion of impurities or warp, by making a contact needle contact with a semiconductor substrate through a photosensitive film and by connecting the same to an earth potential. CONSTITUTION:In the case when there is no conductive film on a semiconductor substrate 1, a conductive film 8 such as a film of mesa (SnO2), for instance, is connected on the surface of the semiconductor substrate 1 and then a resist 4 is connected thereon. Thereafter, the substrate thus prepared is set on a jig for ion beam exposure. Although a gate electrode 3 of a MOS transistor is conductive, it can not contact with a contact needle 7, because the conductive part thereof is much limited. Therefore the conductive film 8 is attached thereto. When the semiconductor substrate 1 is set, the contact needle 7 pierces the resist 4 and contacts with the conductive film 8. When ion beams are applied onto the semiconductor substrate 1, charged particles pass from the conductive film 8 through the contact needle 7 and further through a conductive wafer- supporting table 6 and are let to be released to an earth terminal.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion beam exposure jig, and more particularly to an ion beam exposure jig that can prevent charging phenomena.

[Conventional technology]

In a monolithic integrated circuit in which a large number of semiconductor elements are assembled on a basic semiconductor substrate, all the semiconductors therein have a planar structure. Such semiconductor devices are manufactured by selectively diffusing impurities, opening contact windows in the surface oxide film, forming an insulating film to protect the semiconductor surface, and finally exposing the wiring layer only at the bonding pad for lead wire extraction. It is formed through the following steps.

Of the above steps, in the formation of an insulating film to protect the surface of the semiconductor, only the surface of the semiconductor substrate 6. An insulating film is also formed on the side and back surfaces. Therefore, the ion beam
When drawing is performed on a semiconductor surface using a drawing method, the presence of an insulating film causes a charging phenomenon, which may change the characteristics of the semiconductor element or even destroy the semiconductor element. In order to protect the semiconductor element from being destroyed by such charged particles, it is necessary to release the charged particles within the semiconductor substrate to the outside of the semiconductor.

Conventionally, in order to allow charged particles to escape from the semiconductor substrate, a semiconductor substrate coated with a resist to protect the insulating film on the surface of the semiconductor substrate is dipped in an etching solution for the insulating film, and only the insulating film on the back side of the semiconductor substrate is etched. After etching, the resist deposited on the surface of the semiconductor substrate is peeled off using a resist stripping solution. Next, a resist for ion beam writing is deposited on the surface of the semiconductor substrate, and charged particles are applied to the back surface of the semiconductor substrate. A metal bottle was set up to allow the ions to escape from the substrate, and ion beam lithography was carried out.

[Problem that the invention seeks to solve]

FIG. 2 is a cross-sectional view 111 illustrating an example of the use of a conventional ion vino, an exposure jig, and the like. FIG. 2 shows a state in which the semiconductor substrate 11 is mounted on the ionbeno/ray beam jig.

First, before the semiconductor substrate 11 is mounted, the insulating film on the back surface is subjected to complicated photo-etching, separately from the insulating films 12 on the front and side surfaces.
One notch is removed over the entire back surface using the I technique.

Next, the semiconductor base &l MO8I non-star game
G electrode 14. An ion beam resist 14 is applied to the surface on which the conductive film 18 and the like are provided, and then this semiconductor substrate 11 is mounted on an ion beam exposure jig. This jig is composed of a conductive bottle 17 for releasing charged particles generated by irradiating the semiconductor substrate, a Uninor support stand 16, and a wafer holder 15. Here, the charged particles in the semiconductor substrate are transferred from the semiconductor substrate 11 to the conductive bottle 17.
The sea urchin... is released from the support base 16 to the earth terminal.

When manufacturing semiconductor devices that use a one-on-beam exposure jig like the one described above, which produces mixed light, there is no protective insulating film on the surface of the semiconductor substrate, which allows impurities to diffuse from the back surface, causing damage to the semiconductor element. In addition to the shape W, warping occurs in the semiconductor substrate due to the difference in thermal expansion coefficient between the semiconductor substrate and the semiconductor surface protection insulating film, and the stress caused by the warp affects the characteristics of the semiconductor element. Toss. Further, the process of etching the insulating film on the semiconductor substrate 1 is complicated, and there is a drawback that impurities are likely to be immersed therein.

[Means for solving the problem, j The ion beam exposure jig of the present invention is 41! In the ion beam exposure jig used to perform ion beam exposure while allowing charged particles to escape by bringing a contact needle into contact with a semiconductor substrate, the contact needle 'r-#4ir Mr. The device includes means for penetrating the applied photosensitive coating and contacting the semiconductor substrate, and means for connecting the contact needle to ground potential.

〔Example〕

FIG. 1 is a sectional view of an ion beam exposure jig in which a semiconductor substrate is mounted 1 to 1 for explaining an embodiment of the present invention.

An ion beam exposure jig according to an embodiment of the present invention includes sea urchins,
・-Retention 5. The conductive contact needle 7 is composed of a conductive support 6 and a conductive contact needle 7, and the conductive contact needle 7 is fixed to an insulator support 5 such as Tenoron. One end of the -C contact needle 7 is in contact with the conductive wafer support 6.

On the other hand, 411! on the semiconductor substrate 1! : When the film 8 is present, the semiconductor substrate 1 is coated with the resist 4 on the surface, and then
It is installed in an ion beam exposure jig. If there is no four-electrode film on the semiconductor substrate 1, the semiconductor substrate 10
1. Deposit a conductive film 8 on the surface, such as a mesa (SnO,) film. After applying resist 4, 1. After that, it is placed in an ion beam exposure jig.

In addition, if 11λ is the gate electrode of the MO8h transistor, the gate electrode 3 is +', but since it is only a small part, it cannot contact the contact needle 7, so ===h+s cannot be attached as in the above IJr. 3. When the semiconductor substrate 1 is installed, the contact needle 7 penetrates the resist 4 and comes into contact with the conductive film 8.

As described in 1-1 above, when the semiconductor substrate 1 is irradiated with ion beams, the charged particles conduct the conduction from the membrane 8 to the contact needle 7, which leads to the surface of the semiconductor substrate 1. It passes through the stand 6 and escapes to the ground terminal.

r Effect of invention] J! According to the present invention, 1: In particular, in the manufacturing process of semiconductor devices, the influence of particles 11c is eliminated, causing deterioration of the characteristics of semiconductor elements due to the intrusion of impurities and warping. The process is simplified, the workability of the manufacturing process is improved, and high-quality semiconductors can be provided at low cost.

[Brief explanation of drawings]

6-Fig. 1 shows the conductor board 4-board 1 on the flow side of the present invention.
．． 4/Cross-sectional view of the beam fittings, 2nd. figure tit
11 Sivino from 1991, Wi for Fukko (there is t. Game
-, 4...Photosensitive coating, 5...(]F...
・-Holding, (i...1shi,...-Supporting stand, 7.
... Conductive, +'1 contact needle, 8 ... Conductive film, 9 ... Insulating film, 11 ... Semiconductor substrate, 1
2...Insulation 1a, l:s...MOS)
Fuyu/Jista's game 1, 14...Photosensitivity +'
1 Pa, 15...Wafer holding, 16...
...J...-Support stand, 17...4 Arashi bottle,
18...conductivity n starvation. Dai J Chunin Ri (Italy 11th Earth, Uchihara Susumu f)

Claims (1)

[Claims] An ion beam exposure jig used to perform ion beam exposure by bringing a conductive contact needle into contact with a semiconductor substrate and releasing charged particles, the jig being used to perform ion beam exposure by bringing a conductive contact needle into contact with a semiconductor substrate, the contact needle being attached to a photosensitive material on the semiconductor substrate. 1. An ion beam exposure jig comprising: means for penetrating a transparent coating to contact a semiconductor substrate; and means for connecting the contact needle to a ground potential.