JPS6220309A - Light irradiation furnace - Google Patents

Light irradiation furnace

Info

Publication number
JPS6220309A
JPS6220309A JP15937785A JP15937785A JPS6220309A JP S6220309 A JPS6220309 A JP S6220309A JP 15937785 A JP15937785 A JP 15937785A JP 15937785 A JP15937785 A JP 15937785A JP S6220309 A JPS6220309 A JP S6220309A
Authority
JP
Japan
Prior art keywords
temperature
gas
wafer
chamber
cooling effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15937785A
Other languages
Japanese (ja)
Inventor
Manzo Saito
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP15937785A priority Critical patent/JPS6220309A/en
Publication of JPS6220309A publication Critical patent/JPS6220309A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Abstract

PURPOSE:To minimize a wafer cooling action and thereby to obtain the excellent uniformity of the temperature of a wafer, by preheating an ambient gas to be introduced into a chamber. CONSTITUTION:When a heater 8 is energized and a nitrogen gas is preheated thereby to a high temperature before it is introduced into a chamber, a wafer cooling effect by the nitrogen gas is sharply reduced. In the case when the temperature of gas is increased to 1,000 deg.C in a preheating chamber, the lowering of the temperature of a wafer is reduced to about 4 deg.C. It is because the temperature of gas itself lowers while the gas passes through a low-temperature piping 9 that the cooling effect still exists in spite that the gas is heated in the preheating chamber. In order to hold down further the wafer cooling effect by an introduced ambient gas so as to realize an optimum heating condition, accordingly, the temperature of gas in a preheating chamber 7 needs to be set at a temperature higher than 1,000 deg.C.
JP15937785A 1985-07-18 1985-07-18 Light irradiation furnace Pending JPS6220309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15937785A JPS6220309A (en) 1985-07-18 1985-07-18 Light irradiation furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15937785A JPS6220309A (en) 1985-07-18 1985-07-18 Light irradiation furnace

Publications (1)

Publication Number Publication Date
JPS6220309A true JPS6220309A (en) 1987-01-28

Family

ID=15692484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15937785A Pending JPS6220309A (en) 1985-07-18 1985-07-18 Light irradiation furnace

Country Status (1)

Country Link
JP (1) JPS6220309A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6433216A (en) * 1987-07-23 1989-02-03 Kuraray Co Production of sliver made of polyester fiber sliver
US5645646A (en) * 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
US6953605B2 (en) 2001-12-26 2005-10-11 Messier-Bugatti Method for densifying porous substrates by chemical vapour infiltration with preheated gas
JP2009236245A (en) * 2008-03-27 2009-10-15 Nippon Steel Corp Turnbuckle of shape memory alloy and axial force introduction method of rod using it

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6433216A (en) * 1987-07-23 1989-02-03 Kuraray Co Production of sliver made of polyester fiber sliver
US5645646A (en) * 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
US6146464A (en) * 1994-02-25 2000-11-14 Applied Materials, Inc. Susceptor for deposition apparatus
US6953605B2 (en) 2001-12-26 2005-10-11 Messier-Bugatti Method for densifying porous substrates by chemical vapour infiltration with preheated gas
JP2009236245A (en) * 2008-03-27 2009-10-15 Nippon Steel Corp Turnbuckle of shape memory alloy and axial force introduction method of rod using it

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