JPS6220309A - Light irradiation furnace - Google Patents
Light irradiation furnaceInfo
- Publication number
- JPS6220309A JPS6220309A JP15937785A JP15937785A JPS6220309A JP S6220309 A JPS6220309 A JP S6220309A JP 15937785 A JP15937785 A JP 15937785A JP 15937785 A JP15937785 A JP 15937785A JP S6220309 A JPS6220309 A JP S6220309A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- gas
- wafer
- chamber
- cooling effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光照射金主とする加熱炉に関し、特に加熱均
一性のよい光照射炉に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heating furnace mainly using light irradiation metal, and particularly to a light irradiation furnace with good heating uniformity.
従来、光照射加熱炉内に導入される窒素などのガスは、
特に予備加熱されることｉＩｊ′なく、室温でブヤンバ
ー内に導入される。Conventionally, gases such as nitrogen introduced into the light irradiation heating furnace were
It is introduced into the buoyant bar at room temperature without any particular preheating iIj'.
上述した従来の光照射炉を用いると、プロセスガスは室
温で導入される。光照射炉のチャンバーは抵抗加熱炉の
炉心管などと比較すると、通常極めて小さくさむている
。このため、チャンバー内に導入さｔたガスは瞬時にし
てウェハー面上に到達する。これらガスは温められるこ
となく、ウェハ一温度に比して冷たいままウェハー表面
に到達するため、ウェハー冷却効果が大きい。チャンバ
ー内におけるプロセスガスの流れ全完全に均一化するこ
とは不可能でおり、このガス流の不完全性がウェハー冷
却効果の不均一性と、その結果としてのウェハ一温度の
不均一性とをもたらす。このウェハー冷却効果不拘−性
は、ウェハ一温度が高くなるほど大きくなり、１０００
″Ｃ程度の高温領域では、顕著なウェハ一温度不拘−性
をもたらすという、重大な欠点を有する。Using the conventional light irradiation furnace described above, the process gas is introduced at room temperature. The chamber of a light irradiation furnace is usually extremely small compared to the core tube of a resistance heating furnace. Therefore, the gas introduced into the chamber instantly reaches the wafer surface. These gases are not heated and reach the wafer surface while being cold compared to the wafer temperature, so the wafer cooling effect is large. It is impossible to completely equalize the process gas flow within the chamber, and imperfections in this gas flow can lead to non-uniformity in the wafer cooling effect and, as a result, non-uniformity in the wafer temperature. bring. This wafer cooling effect independence increases as the wafer temperature increases, and
In the high-temperature region of about 1000 yds., it has a serious drawback in that it results in significant wafer temperature insensitivity.
通常、光照射炉は、加熱チャンバー内にガスを導入する
機構Ｔｉ［している。本発明の光照射加熱は、ガスを加
熱する機構を有し、チャンバー内に導入されるガスはあ
らかじめ予備加熱できるようにされている。Usually, a light irradiation furnace has a mechanism Ti for introducing gas into the heating chamber. The light irradiation heating of the present invention has a mechanism for heating gas, and the gas introduced into the chamber can be preheated in advance.
次に、本発明について、図面を参照して説明する。第１
図は本発明の実施例の概念図である。筐体１内にハロゲ
ンランプ２が設置され、その内側に石英製チャンバー３
が設けられている。シリコンウェハー４は石英製支持台
５上に置かれ、前記ランプ２により光照射加熱さ詐る。Next, the present invention will be explained with reference to the drawings. 1st
The figure is a conceptual diagram of an embodiment of the present invention. A halogen lamp 2 is installed inside a housing 1, and a quartz chamber 3 is installed inside the halogen lamp 2.
is provided. A silicon wafer 4 is placed on a quartz support 5 and heated by light irradiation by the lamp 2.
チャン／（−内には配管６を経由して窒素などの雰囲気
ガスが導入される。この雰囲気ガスは、チャンノ（−内
に導入される前に、予備加熱室７内に設けら扛たヒータ
ー８により温められた後チャンバー３内に導入さ詐る。Atmospheric gas such as nitrogen is introduced into the chamber/(-) via piping 6. Before this atmospheric gas is introduced into the chamber (-), it is heated by a heater installed in the preheating chamber 7. After being heated by 8, it is introduced into the chamber 3.
雰囲気ガスとして窒素を５１／ｍｉｎ 流し、シリコ
ンウェハー４ｅ１０００℃に加熱した場合、ガス導入口
側のウエノ・一温度は１０℃以上低下する。When nitrogen is flowed as an atmospheric gas at a rate of 51/min and the silicon wafer 4e is heated to 1000°C, the temperature of the wafer on the gas inlet side decreases by 10°C or more.
ガス導入口取付位置とウエノ・−位置との相対的位置関
係によっては、極端な場合は４０℃以上の温度低下が観
測される場合すらある。Depending on the relative positional relationship between the gas inlet mounting position and the Ueno position, in extreme cases, a temperature drop of 40° C. or more may even be observed.
ところが、ヒーター８に通電し、窒素ガスをあらかしめ
高温化してからチャンバー内に導入すると、窒素ガスに
よるウェハー冷却効果が激減する。However, if the heater 8 is energized to warm up the nitrogen gas and then introduce it into the chamber, the wafer cooling effect of the nitrogen gas is drastically reduced.
予備加熱室にて、ガス温度を１０００℃まで加熱した場
合、ウェハ一温度の低下は４°Ｃ程度に抑えらｔた。予
備加熱室で混められたにもかかわらず、冷却効果が存在
するのは、低温配管９を通過する間にガス温度自体が低
下する為である。従って、導入雰囲気ガスによるウェハ
ー冷却効果を更に抑制し、最適加熱条件を実現する為に
は、予備室７におけるガス温度を１０００°Ｃより高い
温度に設定する必要がある。When the gas temperature was heated to 1000°C in the preheating chamber, the decrease in wafer temperature was suppressed to about 4°C. The reason why there is a cooling effect even though the gases are mixed in the preheating chamber is because the gas temperature itself decreases while passing through the low-temperature pipe 9. Therefore, in order to further suppress the wafer cooling effect due to the introduced atmospheric gas and to realize optimal heating conditions, it is necessary to set the gas temperature in the preliminary chamber 7 to a temperature higher than 1000°C.
最適加熱条件を得る為には、装置上の工夫が極めて重要
となる。低温配管９の距離を最小にすｎば、配管９にお
けるガス温度低下は最小にすることができる。また、配
管９を加熱するのも有効な方法である。In order to obtain optimal heating conditions, it is extremely important to make improvements to the equipment. By minimizing the distance of the low-temperature pipe 9, the drop in gas temperature in the pipe 9 can be minimized. It is also an effective method to heat the pipe 9.
本実施例では、予備室内温度を一定＾温に保つ場合を示
した。装置的には多少複雑になるが、ウェハー加熱プロ
グラムに連動し、予備加熱室温度を変化させれば、ウェ
ハー加熱途中においてもウェハ一温度の均一化を図れ、
不慮の温度不均一性による結晶内型や欠陥の誘起を除去
することができる。In this embodiment, a case is shown in which the temperature in the preliminary chamber is maintained at a constant temperature. Although the equipment is somewhat complicated, if the preheating chamber temperature is changed in conjunction with the wafer heating program, the wafer temperature can be made uniform even during wafer heating.
It is possible to eliminate the induction of intracrystalline molds and defects due to unintentional temperature non-uniformity.
予備室内加熱に、本実施例では抵抗加熱を利用シタが、
ハロゲンランプ等を用いると、加熱応答性は更に早くな
る。システムの要求に応じた最適加熱法を選択すること
が重要である。また、予備加熱温度制御方式も、単純加
熱方式であるか、またはフィードバック機構を設けるか
にかかわらず、当該システムに最適な方式を選択するこ
とが重要である。In this example, resistance heating is used to heat the preliminary room.
If a halogen lamp or the like is used, the heating response becomes even faster. It is important to select the optimal heating method according to the system requirements. Furthermore, it is important to select the optimal preheating temperature control method for the system, regardless of whether it is a simple heating method or a feedback mechanism is provided.
以上説明したように本発明を用いれば、チャンバー内に
導入すべき雰囲気ガス’ｌらかしめ加熱することにより
、ウェハーの冷却作用を最小にし、ウェハ一温度の良好
な均一性を実現できる。本発明を用いて均一に加熱され
たウエノ・−は、温度不均一性に起因する特性のバラツ
キや欠陥の誘起が最小となり、ただ単に製造の良品率向
上に寄与するだけでなく、製品の信頼性向上や特性の安
定化による性能の向上をも図れるなど、大きな効果を上
げることができる。As explained above, by using the present invention, by heating the atmospheric gas introduced into the chamber, the cooling effect of the wafer can be minimized and good uniformity of the wafer temperature can be achieved. Ueno heated uniformly using the present invention minimizes the variation in properties and the induction of defects caused by temperature non-uniformity, which not only contributes to improving the yield rate in manufacturing, but also improves product reliability. It can have great effects, such as improving performance by improving properties and stabilizing properties.
第１図は本発明の実施例の概念図である。
１は筐体、２はハロゲンランプ、３は石英チャンバー、
４はウェハー、５は支持台、６は配管、７は予備加熱室
、８はヒーター、９は配管である。
６一FIG. 1 is a conceptual diagram of an embodiment of the present invention. 1 is a housing, 2 is a halogen lamp, 3 is a quartz chamber,
4 is a wafer, 5 is a support stand, 6 is a pipe, 7 is a preheating chamber, 8 is a heater, and 9 is a pipe. 61
Claims (1)
れる気体はあらかじめ加熱されることを特徴とする光照
射炉。A light irradiation furnace that mainly uses light irradiation, wherein a gas introduced into the heating furnace is heated in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15937785A JPS6220309A (en) | 1985-07-18 | 1985-07-18 | Light irradiation furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15937785A JPS6220309A (en) | 1985-07-18 | 1985-07-18 | Light irradiation furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6220309A true JPS6220309A (en) | 1987-01-28 |
Family
ID=15692484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15937785A Pending JPS6220309A (en) | 1985-07-18 | 1985-07-18 | Light irradiation furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6220309A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6433216A (en) * | 1987-07-23 | 1989-02-03 | Kuraray Co | Production of sliver made of polyester fiber sliver |
| US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
| US6953605B2 (en) | 2001-12-26 | 2005-10-11 | Messier-Bugatti | Method for densifying porous substrates by chemical vapour infiltration with preheated gas |
| JP2009236245A (en) * | 2008-03-27 | 2009-10-15 | Nippon Steel Corp | Turnbuckle of shape memory alloy and axial force introduction method of rod using it |
-
1985
- 1985-07-18 JP JP15937785A patent/JPS6220309A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6433216A (en) * | 1987-07-23 | 1989-02-03 | Kuraray Co | Production of sliver made of polyester fiber sliver |
| US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
| US6146464A (en) * | 1994-02-25 | 2000-11-14 | Applied Materials, Inc. | Susceptor for deposition apparatus |
| US6953605B2 (en) | 2001-12-26 | 2005-10-11 | Messier-Bugatti | Method for densifying porous substrates by chemical vapour infiltration with preheated gas |
| JP2009236245A (en) * | 2008-03-27 | 2009-10-15 | Nippon Steel Corp | Turnbuckle of shape memory alloy and axial force introduction method of rod using it |
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