JPS62202886A - Aluminum nitride sintered body with metallized surface - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an aluminum nitride sintered body, and more specifically, an aluminum nitride sintered body having a metallized surface with reliable and practical bonding strength. It is related to.

2. Description of the Related Art Semiconductor devices and devices and equipment using them generally include various active and passive elements, but these have the problem of heat generation. Therefore, in order to operate these elements stably and reliably, it is necessary to perform the best thermal design during mounting, which is extremely important in the design and manufacture of semiconductor devices and the like.

Furthermore, in recent years, there has been a major trend toward faster operation and higher integration of semiconductor devices, and in particular, there has been a remarkable increase in the integration density of LSIs and the like. Along with this, the amount of heat generated per puff cage also increases significantly. For this reason, importance has been placed on the heat dissipation properties of substrate materials.

On the other hand, alumina has traditionally been used as ceramics for IC boards, but the thermal conductivity of conventional alumina sintered bodies is insufficient for heat dissipation, and it is becoming increasingly difficult to cope with the increased heat generation of IC chips. . Therefore, as an alternative to such alumina substrates, substrates or heat sinks using aluminum nitride, which has high thermal conductivity, have attracted attention, and many studies have been conducted to put them into practical use.

Aluminum nitride inherently has high thermal conductivity and high insulation properties, and unlike heliaria, it is non-toxic, so it is viewed as a promising material in the semiconductor industry, especially as an insulating material or a packaging material.

Since aluminum nitride (MN) sintered bodies have high thermal conductivity, they are attracting attention as substrates for integrated circuits (ICs), heat sinks, etc. as described above. However, while having such interesting properties, MN sintered bodies have problems in bonding strength with metals, glass, glass, etc. Tokorodeko's sintered body can be prepared using either the thick film method, in which a commercially available mekrise paste is directly applied to the surface, or the thin film method, in which a thin film of active metal or metal is formed by vapor deposition or other methods. It is generally used with a metallized layer applied. However, it is not possible to obtain a bonding strength that can withstand practical use by such a method, and in reality, the surface is modified by some method before or during metallization, and other methods such as It is necessary to improve bondability with metals, etc.

As a conventional method for surface modification of such a fiN sintered body, a method is known in which the surface of the MN sintered body is subjected to oxidation treatment or the like to form an oxide layer. That is, for example, SiO□, M2O2, Murai), Few on the surface of the MLN sintered body.
This is a method of forming an oxide layer such as O3, CLIO, etc. However, although the oxide layer as exemplified above has good affinity with the glass layer, alumina layer, etc. and forms a strong bond, it has little affinity with the MLN sintered body itself and is reliable. It is thought that there is a problem with affordability.

Problems to be Solved by the Invention As mentioned above, MN sintered material has extremely good electrical insulation and thermal conductivity, and is therefore expected to be used as an IC insulating substrate or heat sink material that requires good heat dissipation. The body is often used with its surface metallized, but there have been problems in terms of bonding strength to these metals. Therefore, various methods such as those described above have been considered, but all of them are insufficient, and a NLN sintered body having a metallized surface sufficient for practical use has not yet been obtained.

That is, good bonding strength could not be obtained by the conventional thick film method of applying a MLN sintered body and a metallized paste (for example, a commercially available frit or chemical bond type). This is because the conductor paste was originally NL20. This is because the reactivity is not as good as that of fiNN.

Furthermore, oxide treatment of the surface of the MN sintered body is known, in which a method is known in which metallization is performed while or after the oxide layer is formed. However, from inside, the above SiOz
, 4zOs, mullite, Pt403, CuO, etc., have poor reactivity with MLN. Moreover, even if a reaction layer is formed, since the reaction layer is essentially similar to an oxide layer, the reactivity with the MN surface will hardly be improved, and therefore the reaction with A; Bonding strength is also not improved.

Furthermore, this oxide treatment has problems in terms of density and film bonding strength. That is, the oxide treatment of the fflN surface is expressed, for example, by the following formula: 2MLN+ -Ot -MtOz +NtNitrogen gas may be generated during this reaction, and the resulting oxide film is extremely porous. It becomes a membrane.

Further, it is difficult to expect sufficient bonding strength even by thick film methods or thin film methods using active metals.

In other words, this is because even when active metals that are highly reactive with nitrides are used, NLN is extremely chemically stable, so sufficient bonding strength cannot be obtained between them, making it difficult to bond. It seems to be.

As described above, all attempts to achieve a bond strength sufficient for practical use between the MN sintered body and the metallized layer have failed. Therefore, we developed a compound that has affinity for both the metal layer or metal oxide and the NLN sintered body to ensure the bond between them and improve the bonding strength between the metallized layer and the NLN sintered body. The development of new technology that can do this is desperately needed.

Therefore, an object of the present invention is to improve the bonding strength between a metallized layer having excellent insulation properties and heat dissipation properties and an ff1N sintered body. That is, the object of the present invention is to provide a MN sintered body having excellent bonding strength and a highly reliable metallized surface.

Means for Solving the Problems In view of the current state of the conventional methods described above for improving the bonding strength between the metallized layer and the MLN sintered body, the present inventors have conducted various studies and research in order to develop new techniques. As a result, it was found that it is effective to provide an intervening layer of a specific material between the MLN sintered body and the metallized layer, or to mix a specific material into the metallized layer in advance, and The present invention was completed based on new findings.

That is, according to one embodiment of the MLN sintered body having a metallized surface of the present invention, the MN sintered body, a metallized layer thereon, and lead oxide, germanium oxide, bismuth oxide, It is characterized by comprising an intervening layer containing one or more selected from the group consisting of antimony oxide and these compounds.

According to another aspect of the present invention, the MLN sintered body having a metallized layer of the present invention includes a MLN sintered body, lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these. A metallized layer containing one or more selected from the group consisting of compounds, and a group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds formed between them. It is characterized by being composed of an intervening layer containing one or more selected types.

In the first aspect of the present invention, the metallized layer material is gold (Au), gold (Au)-platinum (Pt), platinum (Pt
), iffl(Ag) or A, -palladium (Pd)
thick film paste (1st group), or also w4(Cu)
, tungsten (W) or molybdenum (MO), molybdenum (Mo)-manganese (Mn) thick film paste (
Group 2) and the like can be cited as preferred examples.

For the first group, these materials can be made into a metallized layer by first applying the thick film paste under an air atmosphere, an oxygen stream, or a nitrogen atmosphere, and then firing, and for the second group, a metallized layer can be formed by A metallized layer can be obtained by similarly applying a thick film paste under an oxidizing atmosphere, a weakly reducing atmosphere, or a humidified atmosphere (humidity 10% or less) and firing it.

In this case, the intervening layer formed includes one or more selected from the group consisting of lead oxide, germanium oxide, antimony oxide, and compounds thereof and the metallized layer forming material and/or fiN for the firing operation. One or more selected from the group consisting of lead oxide, germanium oxide, antimony oxide, and compounds thereof, present in reaction with the substrate and/or as a diffusion layer and/or mixed layer, or during production; Alternatively, a layer of a mixture alone may exist.

Furthermore, the metallized layer is formed by forming one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds on the surface of the ff1N sintered body, Titanium (Ti), zirconium (Zr), hafnium (If), etc. as active metals with high affinity for one or more selected from the group consisting of germanium, bismuth oxide, antimony oxide, and these compounds (according to the periodic table). It can also be obtained by depositing M0% nickel (Ni) as the innermost layer, or by depositing Ti or Zrs, then Pt, and Au in this order using a thin film formation method. In this case, there are no particular restrictions on the thin film forming method, including vacuum evaporation, chemical vapor deposition (CVD), and plasma CVD.
Depending on the material, type, etc., the method can be appropriately selected from among methods such as method, sputtering method, ion blating method, and ion vapor deposition thin film forming method (IVD).

In the first embodiment described above, one or more ff1 selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof.
The method of forming N on the surface of the sintered body is the thick film method or 'iII.
This can be done by a membrane method.

More specifically, one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds can be applied by spraying, screen printing, vacuum deposition, chemical vapor deposition, or physical deposition. This can be done by vapor deposition, ion implantation, etc., and there are no particular restrictions on the thickness.

According to another aspect of the invention, the metallization layer material may be Au-Pt, Pt, Ag or A.
Preferred examples include g-Pd thick film paste and Cu-, W-, Mo or Mo-Mn thick film paste. These materials contain one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof, and the amount thereof is 0.5% of the total metal weight in the paste. 01
It is preferably 10% by weight. The thick film paste containing one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds is directly applied onto the surface of the MN sintered body, and then fired. By doing so, a two-layer structure is formed. However, in reality, when thick film paste is fired, one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds diffuses and reacts, resulting in oxidation. An intervening layer is formed as a diffusion layer and/or a reaction layer containing one or more selected from the group consisting of lead, germanium oxide, bismuth oxide, heptimony oxide, and these compounds, and actually has a three-layer structure. becomes. Furthermore, in this embodiment, as in the first embodiment, one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds is applied to the NLN surface in advance. Of course, it is also possible to apply a paste containing this thereon and bake it.

The MN sintered body having the metallized surface of the present invention described above has a structure as shown in the attached FIGS. 1(a) and 1(b), respectively. FIG. 1(a) is a schematic cross-sectional view of the first embodiment of the present invention, that is, an example having a three-layer structure.
LN sintered body 1, metallized layer 2, one or more layers from the group consisting of lead oxide, bismuth oxide, antimony oxide, and these compounds interposed between them, the metallized layer, and/or It is formed with an intermediate intervening layer 3 composed of a reaction layer with the MN substrate and/or a diffusion layer and/or a mixed layer.

On the other hand, according to the second aspect of the present invention, as shown in FIG. 1(b), one or more compounds from the group consisting of lead oxide, bismuth oxide, antimony oxide, and these compounds Lead, bismuth, antimony or oxygen diffuses into the ff1Nli from the metallization paste containing it and reacts with fiN or/and its grain boundary layers to form M
A third layer 3 different from the LN sintered body 1 and the metallized layer 2'
' (interface N) is formed to ensure adhesion and compactness between them, and to guarantee the strength of the MN sintered body.

Furthermore, the UN sintered body as a substrate useful in the present invention can be produced by any conventionally known method, but since the powder itself of fiN has extremely poor sinterability, it can be obtained by sintering after powder compaction. The produced NLN sintered body often has a large amount of pores and has poor thermal conductivity. This is f
The heat conduction mechanism of insulating ceramics such as iN sintered bodies is mainly based on phonon conduction due to anharmonic interaction between lattice vibrations because this MLN consists of ionic and covalent bonds. This is because when defects such as pores and impurities are present, phonon scattering is significant and only low thermal conductivity can be obtained.

Therefore, it is preferable to use a material obtained by a method for manufacturing an AiN sintered body having a dense quality and good thermal conductivity developed by the present inventors. In this method, a solution of at least one selected from the group consisting of yttrium (Y) and cerium (Ce) alkoxides is added to MLN powder with an oxygen content of 1.8% by weight or less in terms of Y or Ce.
~10% by weight was added, mixed and decomposed, then molded, 170% by weight.
It consists of normal pressure sintering in a non-oxidizing atmosphere at a temperature within the range of 0 to 2200°C (see Japanese Patent Application No. 184635/1986). However, the material is not limited to this example, and is not particularly limited as long as it is dense and has good thermal conductivity.

Function Because fiN sintered bodies have excellent insulation and thermal conductivity, they can be used for semiconductor devices, especially highly integrated IC chips, insulating substrates for high-speed operation, high-frequency operation, high heat generation elements, or semiconductors such as heat sinks. It was seen as a promising material for buff caging. However, this AI! N sintered bodies are insufficient in their bonding strength, and although various studies have been conducted to improve this point, so far nothing has been found that is fully satisfactory and can withstand practical use. Not yet.

By the way, the problem with the bonding strength of this UN sintered body is that the A1
This problem can be advantageously solved by devising the method of the present invention when metallizing a 1N sintered body.

In general, metals have a high affinity for oxygen, but f
Since iN is obviously a nitride, when a metallized layer is provided on it, it is possible to form a metal/metal oxide and aluminum nitride by interposing a single element or a compound of an element that has an affinity for aluminum nitride at the interface between them. It is thought that the two can be strongly combined.

From this technical standpoint, the present inventors have come to the opinion that one or more of the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds are effective, and the present invention completed.

That is, the known intervening layers on the NLN surface are mostly oxides, and in this study, among those with high chemical affinity for both metal/metal oxides and nitrides, lead oxide, germanium oxide, One or more types from the group consisting of bismuth oxide, antimony oxide, and these compounds are effective, and their melting points are 650 to 1200 ° C.
A relatively low temperature, i.e. 800°C to 1000°C, is sufficient for MN.
It wets, diffuses and/or reacts with the sintered body.

Moreover, since these compounds adhere strongly to metals and metal compounds, it is thought that by using them as an intervening layer, sufficient bonding strength between the metallized layer and the MN substrate is ensured.

There are two main methods for forming one or more materials selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds on the interface of the MN sintered body and the metallized layer. One method is to first apply a thick film method to the surface of the fiN sintered body.
A layer consisting of one or more types from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds is formed using a thin film method, and a metallized layer is passed through the layer to form a strong bond. The goal is to achieve the following.

Another method is to add and mix in advance one or more of the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and their compounds into a paste for forming a metallized layer, and then MN sintering. This can be achieved by applying it directly to the body and firing it. In either case,
One or more of the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and their compounds, or lead, bismuth, germanium in the compounds thereof,
Antimony and/or oxygen atoms diffuse into the NLN and/or metallization layer and optionally react to form a diffusion layer and/or a reaction layer. This allows NLN
The bond between the sintered body and the metallized layer becomes strong, and an AiN sintered body substrate or the like having a metallized surface that can be used in practical use can be obtained.

In particular, one or two of the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide and their compounds.
In the thick film paste method using a mekrise paste containing more than one species, when firing in an atmospheric atmosphere, the paste materials include Ag, Pt, Au-PL, Au, Ag.
-Pd paste is preferably used, W5MO, Mn is preferably used for firing under a humidified hydrogen atmosphere, and Cu paste is preferably used under a nitrogen atmosphere. In this case, the amount of one or more selected from the group consisting of lead oxide, bismuth oxide, germanium oxide, antimony oxide, and these compounds added to the paste should be 0% of the total metal weight present in the paste as described above. 01 to 10% by weight, which means that the amount of one or more from the group consisting of lead oxide, bismuth oxide, germanium oxide, antimony oxide and their compounds is 10% by weight of the total metal weight. %, there will be no problem in terms of adhesive strength between the fiN sintered body and the metallized layer, but problems will occur in other respects such as wire bonding properties, and the interesting properties of high insulation and high thermal conductivity will be lost. However, it becomes impossible to make the most of it. On the other hand, if the content is less than the lower limit of 0.01% by weight, the desired and sufficient bonding strength cannot be obtained.

・Thus, as in the present invention, M
Due to the interposition between the N sintered body and the metallized layer, various advantages can be obtained. That is, first, they provide a uniform, dense, and strong bond between the two. This means that one or more of the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and these compounds gives good wettability to NLN as well as metals, oxides, glass, etc. This is because high adhesive strength can be obtained as a result.

Therefore, the MN sintered body having a metallized surface of the present invention can be applied to all fields that require the use of a material that has both high heat dissipation and high insulation properties, and is particularly applicable to insulating substrates for ICs, etc. It can be advantageously used for heat sinks, etc.

EXAMPLES Hereinafter, the MN sintered body having a metallized layer of the present invention will be explained in more detail and its usefulness will be demonstrated through examples, but the sintered body of the present invention is not limited in any way by the following examples. .

Example I PbO and Ge with a thickness of 1.0 #m were deposited on the surface of the AIIN substrate.
After applying Oz, BizOi, or 5bzOs by a powder spray method, it was baked at 800° C. for 30 minutes in an air atmosphere. Next, Au to a thickness of about 25 μm was applied to the surface.
After applying Ag-Pd and Ag1 body paste by screen printing, it was fired at 920°C for 10 minutes in an oxygen stream. A wire (copper vAIIIIIIφ) was welded by soldering to the thus obtained AIIN sintered body having a metallized surface, and the tensile strength at that time was measured.

The results were as follows.

PbOGe0t BizOi 5bzOiAu paste 2.1 2.2 2.3 2.
18g-Pd paste 2.3 2
．． 5 2.7 2. OAg paste 2.1 2.4 2.6 2
．． 0 (Kg/+sm+") For comparison, when the paste was applied directly onto the MLN substrate as described above and fired, the tensile strength was 0.4Kg/mn+" for Au paste and 0.4Kg/mn+" for Ag-Pd paste, respectively. .5Kg/m+s”, Ag paste:
0.2 Kg/IIIm".

Example 2 0.01.0.1 of its weight was added to Heg-Pd paste.
pbo, G e Oz, B equal to 1 or 10%
t 20 s or Sb, O.

was added and mixed thoroughly. Thus obtained pbo, Ge
Ox, Bix0a or 5bzOs containing paper
After applying the paste to a thickness of about 20 μm on a MN sintered body substrate, it was fired at 930° C. for 10 minutes in an oxygen stream to obtain a MN sintered body having a metallized surface according to the present invention. The tensile strength measured in the same manner as in Example 1 was as follows.

On the other hand, the tensile strength of the product obtained by directly coating the above Ag-Pd paste without containing it on the MN substrate and firing it was 0.5K.
g/+s@' Example 3 PbOs GeOz with a thickness of 0.5 um was deposited on the fiN substrate.
After applying BitOz or 5bzOs, 950℃
Baking was performed for 10 minutes in a nitrogen atmosphere. Then, similar to Example 1, 5 types (Au, 8g-Pd,
Apply conductive paste of Au-Pt and Ag) and
It was baked for 30 minutes at 0°C. When each was measured using a wire bond (gold wire φ30 μm) method, the following results were obtained.

Further, as a comparative example, similar measurements were conducted on a product obtained by directly applying and firing the paste without applying B metal.

g) Note that this value is generally required to be 6 g or more for practical purposes.

Example 4 PbO, GeOz, B4z02 were prepared in the same manner as in Example 1.
, or N1. coated with 5btOa. On the surface of the N substrate,
A Cu paste was applied to a thickness of approximately 18 μm using a screen printing method.Then, these samples were coated in a humidified hydrogen stream for 8 µm.
It was baked at 20°C for 30 minutes. The tensile strengths of the obtained products were 2.9, 3, 8, 4.9 and 4.0 kg/
mm! Met. For comparison, pbo, GeO2, Bi
The paste was applied directly without using zOi or sb,o, and fired.

The tensile strength was as follows.

Comparative example: Cu 0.4 g/m*” Example 5 W and Mo-Mn pastes were screen printed on the surface of the MN substrate coated with Bi2O2 in the same manner as in Example 4 to a thickness of about 25 μm. These samples were baked in a humidified hydrogen stream at 1610°C and 1440°C for 20 minutes, respectively.The tensile strengths of the resulting products were 3.4.3.
It was 6Kg/Tsuru Ilt. For comparison, each paste was directly applied and fired without using BizOs.

The tensile strength was as follows.

Comparative example: W=0.4Kg/ll1m"Mo-
Mn=0.5Kg/mm” Example 6 W pace manufactured by Asahi Chemical Research Institute Co., Ltd.) (#WA-1
200), B f t corresponding to 0.9% of its weight
Ox was added and thoroughly mixed to obtain a B i z O*-containing W paste.

This paste was applied to the surface of a 4N green sheet to a thickness of about 29 μm by screen printing, and then co-fired in a nitrogen atmosphere. Adhesion strength (tensile strength) is 2.8X
g/sm". On the other hand, an example in which Bi2O2 was not used was also conducted, and the results were as follows.

Comparative example: Adhesion strength = 0.8 Kg/ms + "Example 7 pbo, Ge01% with respect to 100 parts by weight of Au powder
8itch or 5btOz powder from 0.001 to 20
Add ethyl cellulose as an organic binder at a concentration of 6% to 100ffi parts of the metal mixture.
A slurry-like Au paste prepared by adding and kneading terpineol solution containing 20 parts by weight was applied to the NLN substrate to a thickness of approximately 25 μm using a screen printing method, and was baked at 905°C for 10 minutes in an air atmosphere. The bonding strength with the surface was determined by the wire bonding method (Au wire 30IIImφ), and the wire bonding property of the metallized surface was determined by calculating the number of wire-bonded Au wires to the metallized surface compared to the number of wire bonds attempted. It was expressed as a percentage and evaluated in three stages as shown in Table 1 below.

Table 1 Upper part: Wire bond value (g) Lower part: Wire bond property Example 8 0.5 wt% of PbO, GeOz, Bit'3, or 5btO was added to the Cu paste based on the CU metal powder.
After adding and mixing s, this paste was applied onto a MN substrate to a thickness of about 16 μm by screen printing, and baked at 710° C. for 10 minutes in a nitrogen atmosphere. Au metallization was applied to the fired metallized surface to a thickness of about 1 μm, and the bonding strength was determined by the wire bonding method (Au wire 30+a+φ) in the same manner as in Example 8.

Moreover, as a comparative example, the same operation was performed without adding anything to the Cu paste, metallization was performed, and the wire bond value was determined.

Additive powder PbOGe01 BitCI+ 5bt
Oz None (comparative example) Fiyaboshi F (straight axis) 11.
0 11.7 13.4 12.
0 3.8 Effects of the Invention Thus, according to the MN sintered body having a metallized surface according to the present invention, the bonding strength is insufficient, and therefore, although it has interesting high thermal conductivity and high insulation properties, fiN was insufficient for practical use as an insulating substrate with high heat dissipation or as a heat sink for highly integrated ICs, or as an insulating material for various devices with high frequency operation and high speed operation.
It has become possible to improve the bonding strength of the sintered body to the point where it can almost be put into practical use. This includes lead oxide, germanium oxide, bismuth oxide, etc. between the metallized layer and the NtN sintered body.
After intervening one or more selected from the group consisting of antimony oxide and these compounds, or one other compound, or after interposing these lead oxide, germanium oxide, bismuth oxide, or/and antimony oxide and these compounds. By adding and mixing one or more selected from the group consisting of compounds into the paste and then applying the metallization layer by a thick film method or a thin film method, the NLN and/or metallization layer and lead oxide can be combined. , germanium oxide, bismuth oxide, antimony oxide, and one or more selected from the group consisting of these compounds, or a layer of these compounds, forming a diffusion layer and/or a reaction layer to form a strong bond. It is based on

Further, since the metallized surface of the aluminum nitride sintered body according to the present invention has excellent wire bonding strength, it is extremely suitable as a substrate for semiconductor devices, etc., and as an assembly and mounting component of the device.

[Brief explanation of drawings]

FIGS. 1(a) and 1(b) are schematic cross-sectional views for explaining two preferred embodiments of the aluminum nitride sintered body having a metallized surface according to the present invention. (Main reference numbers) 1...MN substrate, 2.2'...metalized layer, 3.3'...intervening layer

Claims (9)

[Claims] (1) An aluminum nitride sintered body, a metallized layer thereon, and lead oxide and germanium oxide formed between them.
An aluminum nitride sintered body having a metallized surface, comprising an intervening layer containing one or more selected from the group consisting of bismuth oxide, antimony oxide, and compounds thereof. (2) The metallized layer is formed by firing a thick film paste of gold, gold-platinum, platinum, silver, or silver-palladium in air, oxygen atmosphere, or nitrogen atmosphere. An aluminum nitride sintered body having a metallized surface according to claim 1. (3) The metallized layer is formed by firing a thick film paste of copper, tungsten, molybdenum, or molybdenum-manganese in a non-oxidizing atmosphere, a weakly reducing atmosphere, or a humidified atmosphere. An aluminum nitride sintered body having a metallized surface according to claim 1. (4) The metallized layer is formed by a thin film method, with a group IVa element of the periodic table as the innermost layer, followed by molybdenum and nickel, or platinum and gold in that order. An aluminum nitride sintered body having a metallized surface according to scope 1. (5) The aluminum nitride sintered body having a metallized surface according to claim 4, wherein the Group IVa element is Ti or Zr. (6) An aluminum nitride sintered body having a metallized layer, the metallized layer containing one or more types selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof. containing lead oxide, germanium oxide, formed between the metallized layer and the sintered body,
The aluminum nitride sintered body having a metallized surface as described above, further comprising an intervening layer containing one or more selected from the group consisting of bismuth oxide, antimony oxide, and compounds thereof. (7) 0.01 to 10% by weight of the total metal weight in which the metallized layer contains one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof. An aluminum nitride sintered body having a metallized surface according to claim 6. (8) Gold, gold-platinum, platinum, silver, or silver- in which the metallized layer contains one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof. Claim 7, characterized in that the paste is obtained by applying a palladium thick film paste to the surface of the aluminum nitride sintered body and firing it in air, oxygen atmosphere, or nitrogen atmosphere. Aluminum nitride sintered body with a metallized surface. (9) A copper, tungsten, molybdenum, or molybdenum-manganese thick film in which the metallized layer contains one or more selected from the group consisting of lead oxide, germanium oxide, bismuth oxide, antimony oxide, and compounds thereof. Apply the paste to the surface of the aluminum nitride sintered body,
The aluminum nitride fired aluminum nitride having a metallized surface according to claim 6 or 7 is obtained by firing in a non-oxidizing atmosphere, a weakly reducing atmosphere, or a humidified atmosphere. Body.