JPS62202534A - Capillary for wire bonding - Google Patents
Capillary for wire bondingInfo
- Publication number
- JPS62202534A JPS62202534A JP61044964A JP4496486A JPS62202534A JP S62202534 A JPS62202534 A JP S62202534A JP 61044964 A JP61044964 A JP 61044964A JP 4496486 A JP4496486 A JP 4496486A JP S62202534 A JPS62202534 A JP S62202534A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- alumina
- purity
- wire
- wire bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 239000011148 porous material Substances 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000005299 abrasion Methods 0.000 abstract 3
- 230000002950 deficient Effects 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000010979 ruby Substances 0.000 description 6
- 229910001750 ruby Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、LSIやICなどの半導体装置のワイヤボン
ディングに使用するキャピラリーに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a capillary used for wire bonding of semiconductor devices such as LSIs and ICs.
半導体装置において、半導体チップの電極とパフケージ
のリード電極との接続には、金またはアルミニウムより
なる直径0.015〜0.1mm程度の細いi線を用い
ているが、この接続工程(ワイヤボンディング)には、
第3図に先端部を示すように導線を先端に送出する直径
0.025〜0.1mm程度の細孔1aを備えたキャピ
ラリー1を使用していた。In semiconductor devices, thin i-wires made of gold or aluminum with a diameter of about 0.015 to 0.1 mm are used to connect the electrodes of the semiconductor chip and the lead electrodes of the puff cage, and this connection process (wire bonding) for,
As shown in FIG. 3, a capillary 1 was used, which was equipped with a pore 1a having a diameter of about 0.025 to 0.1 mm, through which the conducting wire was delivered to the tip.
このキャピラリー1は、全体を純度98χ程度のアルミ
ナ多結晶セラミックスまたはルビー、サファイアなどの
アルミナ単結晶で形成したものが広く用いられていた。This capillary 1 has been widely used which is made entirely of alumina polycrystalline ceramics having a purity of about 98χ or alumina single crystal such as ruby or sapphire.
ところが、従来のアルミナ多結晶セラミックス製キャピ
ラリーの場合、表面に存在する1μm以上のボイドやピ
ンホール等のため、先端部に導線や電極の粉が付着しや
すく、この付着物が多くたまると細孔1aの穴詰まりや
導線切れ、ループ異常等を引き起こしていた。さらに、
このキャピラリー先端部は常に300℃程度となってお
り、1秒間に14回程度の高速で導線を電極上に圧着す
る際に、電極に打ちつけられて瞬間的に約1000℃の
高温に達することがあるため、ヒートショックによる先
端部の欠けや摩耗が激しく、比較的短期間で使用不能と
なっていた。However, in the case of conventional capillaries made of alumina polycrystalline ceramics, due to voids and pinholes of 1 μm or more that exist on the surface, conductive wire and electrode powder easily adheres to the tip, and when a large amount of this deposit accumulates, the pores form. This was causing clogged holes in 1a, broken conductors, and loop abnormalities. moreover,
The tip of this capillary is always at about 300°C, and when the conductor is crimped onto the electrode at a high speed of about 14 times per second, it is hit by the electrode and can instantaneously reach a high temperature of about 1000°C. As a result, the tips were severely chipped and worn due to heat shock, making them unusable in a relatively short period of time.
また、ルビー、サファイア等のアルミナ単結晶で形成し
たキャピラリーの場合は、先端部への導線や電極粉の付
着や摩耗は少ないが、キャピラリー自体を製造する加工
工程中に発生したマイクロクランクに基づき、キャピラ
リーをボンディング装置に取り着ける際などの取り扱い
中に欠けや折れが発生することが多く、ボンディングに
より寿命を全うするものに対し途中で使用不能となるも
のが約50χあった。さらにルビーやサファイアは、ア
ルミナ多結晶セラミックスに比ベコストが高いという問
題点もあった。In addition, in the case of capillaries made of alumina single crystals such as ruby and sapphire, there is less adhesion of conductive wires and electrode powder to the tip and less wear, but due to micro-cranks that occur during the manufacturing process of the capillary itself, Chips and bends often occur during handling, such as when attaching capillaries to a bonding device, and for every capillary that can complete its lifespan through bonding, approximately 50x of capillaries become unusable during the process. Furthermore, ruby and sapphire have a problem in that they are expensive compared to alumina polycrystalline ceramics.
上記に鑑みて、本発明はワイヤボンディング用キャピラ
リーの少なくとも先端部を、純度99.9%以上で、か
つ平均気孔径が1μm以下のアルミナ多結晶セラミック
スにより形成したものである。In view of the above, in the present invention, at least the tip of a capillary for wire bonding is formed of polycrystalline alumina ceramic having a purity of 99.9% or more and an average pore diameter of 1 μm or less.
本発明に係るキャピラリー1は、第1図に示すように、
導線を先端に送出する細孔1aを備えている。このキャ
ピラリー1は、全体を純度99.9%以上のアルミナ多
結晶セラミックスにより形成しており、また平均気孔径
が1μm以下となっている。The capillary 1 according to the present invention, as shown in FIG.
It is equipped with a pore 1a through which the conductive wire is sent out to the tip. This capillary 1 is entirely made of alumina polycrystalline ceramic with a purity of 99.9% or more, and has an average pore diameter of 1 μm or less.
このようなキャピラリー1の実施例として、アルミナ純
度が99.90χのものと、アルミナ純度が99.93
χのものを試作した。従来のアルミナ純度が98Xで平
均気孔径が1μm以上であるキャピラリーとの特性の比
較は、第1表の通りである。Examples of such a capillary 1 include one with an alumina purity of 99.90χ and one with an alumina purity of 99.93χ.
I made a prototype of χ. Table 1 shows a comparison of the characteristics with a conventional capillary having an alumina purity of 98X and an average pore diameter of 1 μm or more.
第1表
第1表から明らかなように、本発明実施例である磁1.
l1h2のキャピラリーは、従来例である11111
L3のキャピラリーに比べ、ビッカース硬度、抗折強度
が大きく、また熱伝導率も高いことがわかる。Table 1 As is clear from Table 1, magnetic 1.
The l1h2 capillary is a conventional example 11111.
It can be seen that compared to the L3 capillary, the Vickers hardness and bending strength are greater, and the thermal conductivity is also higher.
さらに、アルミナ純度が最も高い1lhlのキャピラリ
ーは、かさ比重が3.98とアルミナ単結晶(かさ比重
3.99 )により近く、性質的にもアルミナ単結晶に
近いものである。Furthermore, the 1lhl capillary, which has the highest alumina purity, has a bulk specific gravity of 3.98, which is closer to an alumina single crystal (bulk specific gravity 3.99), and is also closer in properties to an alumina single crystal.
次に、これらのキャピラリーおよび他の材質により形成
したキャピラリーを用いてワイヤボンディング試験を行
なった。それぞれのキャピラリーを10個用意し、同一
条件のもとに金線でボンディングを行ない、ボンディン
グ回数と導線の接続状態の関係を調べた結果、それぞれ
の平均値は第2表の通りであった。Next, a wire bonding test was conducted using these capillaries and capillaries made of other materials. Ten capillaries of each type were prepared and bonded with gold wire under the same conditions, and the relationship between the number of bondings and the connection state of the conductor wires was investigated, and the average values for each were as shown in Table 2.
第 2 表
O・・・異常なし
Δ・・・ワイヤの接続不良が若干発生
×・・・ワイヤの接続不良が多発し、使用不能この第2
表かられかるように、N[Llの超硬質材よりなるキャ
ピラリーは30万回程度で、また患2のアルミナ多結晶
セラミックス(純度98χ)よりなるキャピラリーは6
0万回程度のボンディングで、それぞれワイヤの接続不
良が多く発生し、使用不能となった。N12のアルミナ
多結晶セラミックス(純度98χ)よりなるキャピラリ
ーは、付着物による穴詰まりが多く、途中で付着物を洗
浄してやると再使用できるが、それでも100万回程度
で、摩耗のため完全に使用不能となった。また、1lh
3のルビーよりなるキャピラリーは、400万回程度の
ボンディングを行うことができるが、ボンディング装置
に取り付けるときに欠けや折れが発生して使用不能とな
ったものが3本あった。それに対し、本発明の実施例で
ある阻4のアルミナ多結晶セラミックス(純度99.9
χ)よりなるキャピラリーおよびNo、5のアルミナ多
結晶セラミックス(純度99.93χ)よりなるキャピ
ラリーは、それぞれ240万回、400万回程度迄ボン
ディングを行うことができ、しかもボンディング装置に
取り付けるときに欠けや折れが発生するものはなかった
。Table 2 O: No abnormalities Δ: Some wire connection failures occurred x: Wire connection failures occurred frequently, making this second table unusable.
As can be seen from the table, the capillary made of N[Ll ultra-hard material can be used for about 300,000 cycles, and the capillary made of alumina polycrystalline ceramic (purity 98χ) in Case 2 is used for about 600,000 cycles.
After about 10,000 bonding cycles, many wire connection failures occurred and the device became unusable. Capillaries made of N12 alumina polycrystalline ceramics (purity 98χ) often get clogged with deposits, and although they can be reused by cleaning the deposits midway through, they can only be used about 1 million times before becoming completely unusable due to wear. It became. Also, 1lh
Capillaries made of ruby No. 3 can be bonded about 4 million times, but three capillaries were unusable due to chipping or bending when attached to the bonding device. In contrast, the alumina polycrystalline ceramics (purity 99.9
The capillary made of χ) and the capillary made of alumina polycrystalline ceramics No. 5 (purity 99.93χ) can be bonded up to 2.4 million times and 4 million times, respectively, and they do not break when attached to the bonding device. There were no cracks or creases.
このように本発明に係るキャピラリーは、導線や電極粉
の付着が少なく、また硬度、耐摩耗性が大きく放熱特性
が良いため、ヒートショックによる欠けや摩耗が少なく
、寿命が長い。さらにルビーのような単結晶構造でない
ために、マイクロクランクがあってもある程度以上大き
くならず、取り扱い中に折れや欠けが発生する恐れが少
ない。As described above, the capillary according to the present invention has less adhesion of conducting wires and electrode powder, has high hardness and wear resistance, and has good heat dissipation characteristics, so it is less likely to chip or wear due to heat shock and has a long life. Furthermore, since it does not have a single crystal structure like ruby, even if it has microcranks, it will not grow beyond a certain point, and there is less risk of breakage or chipping during handling.
上記実施例におけるキャピラリーは、99.9%以上の
アルミナにMgO等の焼結助剤を加えたものを成形し、
ホットプレス法、旧P(熱間静水圧加圧)処理、真空焼
成等のうちのいずれかを行うことによって非常に緻密な
構造となり、平均気孔径を1μm以下とすることができ
る。この他、アルミナ純度や平均気孔径の大きさをさま
ざまに変化させたアルミナ多結晶セラミックスよりなる
キャピラリーを試作し、上記と同様のボンディング試験
を行った結果、アルミナ純度が99.9χより低いもの
は先端部の欠けや摩耗が大きく、また平均気孔径が1μ
mより大きいものでは導線や電極粉の付着が大きく、い
ずれも寿命が短いものであった。The capillary in the above example is made of 99.9% or more alumina with a sintering aid such as MgO added,
By performing any one of the hot pressing method, old P (hot isostatic pressing) treatment, vacuum firing, etc., a very dense structure can be obtained, and the average pore diameter can be set to 1 μm or less. In addition, we prototyped capillaries made of alumina polycrystalline ceramics with various alumina purity and average pore size, and conducted the same bonding test as above. The tip is severely chipped and worn, and the average pore diameter is 1μ.
If the diameter was larger than m, the adhesion of conductive wires and electrode powder was large, and both had short lifespans.
また、上記実施例においては、キャピラリー全体を純度
が99.9%以上でかつ平均気孔径が1μm以下のアル
ミナ多結晶セラミックスにより形成したものを示したが
、これに限らず第2図に示すように先端部分Sのみを純
度が99.9%以上で、かつ平均気孔径が1μm以下の
アルミナ多結晶セラミックスにより形成し、他の部分は
別の材質としたものであってもよい。In addition, in the above embodiment, the entire capillary was made of alumina polycrystalline ceramic with a purity of 99.9% or more and an average pore diameter of 1 μm or less, but the capillary is not limited to this, as shown in FIG. Alternatively, only the tip portion S may be formed of an alumina polycrystalline ceramic having a purity of 99.9% or more and an average pore diameter of 1 μm or less, and the other portions may be made of a different material.
叙上のように、本発明によれば、ワイヤボンディング用
キャピラリーの少なくとも先端部を純度が99.9%以
上で、かつ平均気孔径が1μm以下のアルミナ多結晶セ
ラミックスにより形成したことによって、先端部への導
線や電極粉の付着が少ないため、ワイヤの接続不良が起
こりにくく、また強度、耐摩耗性が大きく放熱特性が良
いため先端の欠けや摩耗が少なく、寿命が長くなるだけ
でなく、安定したワイヤボンディングを行うことができ
、半導体装置の品質を安定させることができる。As described above, according to the present invention, at least the tip of the capillary for wire bonding is made of alumina polycrystalline ceramics having a purity of 99.9% or more and an average pore diameter of 1 μm or less. Because there is less adhesion of conductor or electrode powder to the wire, poor wire connections are less likely to occur.Also, the wire has high strength and wear resistance, and has good heat dissipation properties, so there is less chipping and wear on the tip, which not only extends the lifespan but also provides stability. Accordingly, it is possible to perform wire bonding with a high quality, and the quality of the semiconductor device can be stabilized.
さらに、ルビー、サファイアにくらべてコストを低くで
きるなど多くの特長を有したワイヤボンディング用キャ
ピラリーを提供することができる。Furthermore, it is possible to provide a capillary for wire bonding that has many features such as lower cost than ruby and sapphire.
第1図は本発明に係るワイヤボンディング用キャピラリ
ーを示す一部破断面図、第2図は本発明に係るワイヤボ
ンディング用キャピラリーの他の実施例を示す一部破断
面図、第3図は従来のワイヤボンディング用キャピラリ
ーの先端部を示す拡大断面図である。
1:キャピラリー
1a:細孔
F:付着物FIG. 1 is a partially broken sectional view showing a wire bonding capillary according to the present invention, FIG. 2 is a partially broken sectional view showing another embodiment of the wire bonding capillary according to the present invention, and FIG. 3 is a conventional FIG. 2 is an enlarged cross-sectional view showing the tip of the capillary for wire bonding. 1: Capillary 1a: Pore F: Deposit
Claims (1)
均気孔径が1μm以下のアルミナ多結晶セラミックスに
より形成したことを特徴とするワイヤボンディング用キ
ャピラリー。1. A capillary for wire bonding, characterized in that at least a tip portion thereof is formed of alumina polycrystalline ceramic having a purity of 99.9% or more and an average pore diameter of 1 μm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61044964A JPS62202534A (en) | 1986-02-28 | 1986-02-28 | Capillary for wire bonding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61044964A JPS62202534A (en) | 1986-02-28 | 1986-02-28 | Capillary for wire bonding |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62202534A true JPS62202534A (en) | 1987-09-07 |
JPH0316779B2 JPH0316779B2 (en) | 1991-03-06 |
Family
ID=12706169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61044964A Granted JPS62202534A (en) | 1986-02-28 | 1986-02-28 | Capillary for wire bonding |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62202534A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02101754A (en) * | 1988-10-11 | 1990-04-13 | Hitachi Ltd | Bonding process and bonding apparatus |
-
1986
- 1986-02-28 JP JP61044964A patent/JPS62202534A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02101754A (en) * | 1988-10-11 | 1990-04-13 | Hitachi Ltd | Bonding process and bonding apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0316779B2 (en) | 1991-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |