JP2005079145A - Package for semiconductor element, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for semiconductor element in which a lead terminal can be connected with a line conductor at an I/O part rigidly and reliably and a packaged semiconductor element can operate normally and stably over a long term, and to provide a semiconductor device. <P>SOLUTION: The package A for semiconductor element comprises a ceramics substrate 1 having a mounting part 1a of a semiconductor element 7 on the bottom face of a recess formed in the upper surface, and an I/O part 3 having a line conductor 4 formed over the bottom surface of two level differences 3a provided oppositely in the inner and outer surfaces of the sidewall 2 in the central part thereof to penetrate the sidewall 2 and a lead terminal 6 soldered to the line conductor 4 on the outer surface side of the sidewall 2. A plurality of protrusions 4b having the same height and supporting the lead terminal 6 at the upper end thereof are provided on the line conductor 4 on the bottom face of the level difference 3a on the outer surface side of the sidewall 2 in the direction perpendicular to the line direction of the line conductor 4. Metal powder composing the protrusion has a mean particle diameter 1.5-3 times as large as that of metal powder composing the line conductor. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor element housing package and a semiconductor device for housing semiconductor elements such as IC and LSI.

  Conventionally, a package for housing a semiconductor element (hereinafter also simply referred to as a package), which is manufactured through basic steps such as printing, laminating, cutting, and firing a metal paste using a ceramic green sheet (hereinafter also simply referred to as a green sheet). A) is shown in FIG. As shown in FIG. 2A, the package A is mounted on a base 11 made of ceramics having a mounting portion 11a on the upper surface, and is mounted on the upper surface of the base 11 so as to surround the mounting portion 11a. One end of the line conductor 14 is joined to the side wall 12 having the input / output part 13 in which the line conductor 14 is electrically connected and the outer line conductor 14a located on the outer surface side of the side wall 12 by the brazing material 15. And a lead terminal 16 made of an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or the like whose other end is joined to an external electric circuit.

  FIG. 4B is an enlarged view of the periphery of the input / output unit 13 in the cross-sectional view of FIG. 4A taken along the line B-B ', and shows a state where the lead terminal is joined to the outer line conductor 14a. Such joining of the lead terminals 16 with the brazing material 15 is generally performed by placing the package A in a recess formed in a carbon jig, and connecting a plurality of lead terminals 16 from a predetermined portion of the carbon jig to the input / output unit. It is carried out by mounting at 13 and heating at 800 to 900 ° C. in a reducing atmosphere brazing furnace. The brazing material 15 used for joining also has a function of relieving thermal stress generated between the lead terminal 16 and the input / output unit 13, and a crack is generated between the lead terminal 16 and the outer line conductor 14a. Is prevented.

  In this package A, the semiconductor element 17 is mounted on the mounting portion 11a, and is electrically connected to the inner line conductor 14c with a bonding wire, and a lid (not shown) is bonded to the upper surface of the side wall 12. The placement portion 11a is hermetically sealed to form a semiconductor device.

  However, in the joining structure of the lead terminal 16 of the conventional package A, the brazing material 15 that contributes to the joining strength of the lead terminal 16 due to the variation in the size of the gap between the lead terminal 16 and the outer line conductor 14a. The size of the meniscus 15a may be reduced, and in this case, the bonding strength of the lead terminal 16 is reduced. Further, in some of the plurality of lead terminals 16, the size of the gap between the lead terminal 16 and the upper surface of the outer line conductor 14a is partially reduced by the inclination of the lead terminal 16, and as a result, partially. The brazing material 15 was thin. In that case, when an external force that pulls the lead terminal 16 upward is applied, the stress relaxation function of the brazing material 15 does not work effectively. As a result, in the brazing material 15 or at the interface between the brazing material 15 and the outer line conductor 14a. There was a problem that a crack occurred and the lead terminal 16 was peeled off from the outer line conductor 14a with the crack as a starting point.

  Further, as described above, it is necessary to connect a bonding wire for electrically connecting the semiconductor element 17 on the inner line conductor 14c with a wire bonder. For this reason, the surface of the inner line conductor 14c is in a state with less unevenness. The line conductor 14 has been devised to make the surface roughness as small as possible by setting the average particle size of the metal particles constituting this to about 1 to 2 μm.

  However, the fact that the average particle size of the metal particles is reduced and the surface irregularities are reduced reduces the anchor effect of the brazing material 15 and decreases the amount of the brazing material 15 and the size of the meniscus 15a. As a result, the bonding strength of the lead terminal 16 cannot be increased, which causes the reliability of the bonding to be further lowered. In order to solve this problem, it has been studied to make the surface roughness of the inner line conductor 14c and the outer line conductor 14a different, but for this purpose, metal pastes having different average particle diameters must be formed so as to overlap each other. As a result, the thickness of the line conductor 14 is locally increased, and when the ceramic green sheets are laminated, a lamination failure may be induced to cause delamination.

  Among these problems, in order to eliminate the decrease in the bonding strength of the lead terminal 16 due to poor meniscus formation of the brazing material 15, as shown in FIG. A large meniscus 15a can be formed around the lead terminal 16 to be joined to the outer line conductor 14a by forming the metallized layer C having an outer shape slightly smaller than the outer shape of the line conductor 14a. The bonding strength of the terminal 16 can be increased (for example, see Patent Document 1 below).

As another configuration, as shown in FIG. 5 (b), an extended portion 14b is formed by extending the outer line conductor 14a from the shelf portion 13a of the input / output portion 13 to the side portion 13b. There has also been proposed a method in which a large meniscus 15a is formed so that the material 15 flows to the extending portion 14b, and the stress concentration on the meniscus 15a is dispersed (see, for example, Patent Document 2 below).
JP-A-9-139439 (page 3-4, FIG. 1) JP-A-61-29547 (page 3-4, Fig. 1)

  However, in the conventional method disclosed in Patent Document 1, even if the meniscus 15a around the lead terminal 16 can be increased, the brazing material 15 cannot be thickened. As a result, the lead terminal 16 and the outer line conductor can be reduced. When a thermal stress is applied to 14a, the stress relaxation function of the brazing material 15 does not work effectively, cracks may occur, and the lead terminal 16 may be easily peeled off.

  Moreover, in the method of patent document 2, it is necessary to form the metal paste used as the extension part 14b in the side part 13b. In order to form the metal paste from the shelf portion 13a to the side portion 13b of the input / output portion 13 on which the outer line conductor 14a is formed, there is a method of dripping the metal paste into the side portion 13b before the green sheets are laminated. However, when the metal paste reaches the lower surface of the green sheet due to the sagging, it may be electrically connected to the mounting portion 11a that also serves as the ground conductor in the package A, and thus the sagging size needs to be controlled. However, this control is extremely difficult, and as a result, there is a problem that the manufacturing yield is remarkably lowered and the productivity is lowered.

  In addition, as a method of forming the extended portion 14b with a predetermined vertical length on the side portion 13b, a green sheet having an appropriate thickness is added below the green sheet having an appropriate thickness on which the line conductor 14 is provided. Then, there is a method in which the side portion 13b is composed of two insulating layers, and the metal paste is dripped only in the first layer to form the extended portion 14b as described above. However, this method greatly increases the number of processes, and if the metal paste wraps around the lower surface of the green sheet, delamination (delamination between the green sheets) occurs during lamination, resulting in the lead terminals There was a problem that 16 peeled off together with the first insulating layer constituting the shelf 13a.

  In addition, it has been extremely difficult to solve the problem that the surface roughness is small due to the small metal particles, and as a result, it is difficult to obtain the anchor effect, in consideration of the wire bonding conditions.

  Accordingly, the present invention has been completed in view of the above problems, and its purpose is to connect the lead terminal firmly and reliably to the outer line conductor of the input / output portion of the package, thereby maintaining normal and reliable over a long period of time. It is an object to provide a package for housing a semiconductor element and a semiconductor device that can be operated with good performance.

  The package for housing a semiconductor element of the present invention is provided so that a base made of ceramics having a mounting portion for mounting a semiconductor element on the bottom surface of a recess formed on the upper surface and the inner and outer surfaces of the side wall of the base face each other. A line conductor formed of a metallized layer penetrating the side wall is formed at the center of the bottom surface of the two stepped portions, and an input / output unit in which a lead terminal is brazed to the line conductor on the outer surface side of the side wall. A protrusion formed on the line conductor at the bottom of the step on the outer surface side of the side wall by the metallization method of the same height that supports the lead terminal at the upper end perpendicular to the direction of the line conductor. A plurality of metal powders arranged in a certain direction and having an average particle diameter of 1.5 to 3 times the average particle diameter of the metal particles constituting the line conductor. .

  The semiconductor device of the present invention includes a semiconductor element storage package of the present invention, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output electrode, and the side wall of the base. And a lid joined to the upper surface of the substrate.

  The package for housing a semiconductor element of the present invention is provided with a plurality of protrusions formed by a metallization method of the same height for supporting the lead terminal at the upper end on the line conductor on the bottom surface of the step on the outer surface side of the side wall. Since the average particle diameter of the metal powder constituting the strip is 1.5 to 3 times the average particle diameter of the metal particles constituting the line conductor, the distance between the lead terminal and the line conductor is uniform over the entire brazing portion. The surface roughness of the protrusion can be increased.

  As a result, it is possible to increase the thickness of the brazing material, increase the meniscus of the brazing material, and obtain a better anchoring effect. Can be effectively suppressed, and the bonding strength of the lead terminals can be made sufficient, and the bonding reliability can be made extremely high.

  The semiconductor device of the present invention is bonded to the semiconductor element storage package of the present invention, the semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output electrodes, and the upper surface of the side wall of the base. Since the lead terminal bonding strength and bonding reliability are high due to the use of the semiconductor element storage package of the present invention, the external device is strong and reliable over a long period of time. It can be connected well.

  The semiconductor element storage package and the semiconductor device of the present invention will be described in detail below. FIGS. 1A and 1B are a plan view and a cross-sectional view showing an example of an embodiment of the package of the present invention, and FIGS. 2A and 2B are partially enlarged planes of input / output portions in the package of FIG. FIG. 3 is a partially enlarged sectional view, and FIG. 3 is an enlarged sectional view in the vicinity of the ridge.

  In these drawings, reference numeral 1 denotes a base made of ceramics having a mounting portion 1a on which a semiconductor element is mounted, 2 is formed on the upper surface of the base 1 so as to surround the mounting portion 1a, and penetrates inside and outside. A side wall having an input / output part 3 on which a line conductor 4 is formed, 4 is a line conductor, 4a is an outer line conductor positioned on a step 3a on the outer surface side of the side wall 2 of the line conductor 4, 4b is a protrusion, and 5 is a brazing material. Reference numeral 5a denotes a meniscus, and reference numeral 6 denotes a lead terminal which is joined to the outer line conductor 4a and is electrically connected to an external electric circuit device. Further, 7 is a semiconductor element, 8 is a lid, A is a package, and B is a semiconductor device. The base 1, the side wall 2, the input / output unit 3, and the lead terminal 6 basically constitute a package for housing the semiconductor element 7.

  The package A of the present invention has a base body 1 made of ceramics having a mounting portion 1a for mounting a semiconductor element 7 on the bottom surface of a recess formed on the upper surface, and an inner surface and an outer surface of a side wall 2 of the base body 1 so as to face each other. A line conductor 4 made of a metallized layer penetrating the side wall 2 is formed at the center of the two stepped portions 3a across the bottom surface, and a lead terminal 6 is connected to the line conductor 4 on the outer surface side of the side wall 2 (outer line conductor 4a). Is provided with an input / output unit 3 which is brazed. Further, on the line conductor 4 (outer line conductor 4 a) on the bottom surface of the step 3 a on the outer surface side of the side wall 2, a protrusion 4 b formed by the same metallization method that supports the lead terminal 6 at the upper end of the line conductor 4 is provided. A plurality of metal powders provided in a direction perpendicular to the direction, and the average particle diameter of the metal powder constituting the protrusion 4 b is 1.5 to 3 times the average particle diameter of the metal particles constituting the line conductor 4.

  The substrate 1 and the side wall 2 of the present invention are made of ceramics such as an alumina sintered body (alumina ceramics). Since the base body 1 is made of ceramics, the base body 1 is much lighter than metal, and the semiconductor element 6 is placed and fixed inside the package A, and the lid body 8 is joined to the upper surface of the side wall 2 to form the semiconductor device B. In this case, the weight of the semiconductor device B can be extremely reduced.

The base 1 and the side wall 2 are manufactured as follows. When the substrate 1 and the side wall 2 are made of alumina ceramics, for example, an organic binder suitable for raw material powders such as aluminum oxide (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), magnesium oxide (MgO), calcium oxide (CaO), A solvent is added and mixed to form a slurry. This slurry is formed into a green sheet by a doctor blade method or a calender roll method, and cut into a desired size. Next, notches and through-holes that form the step 3a of the side wall 2 and the input / output unit 3 are formed in a plurality of green sheets selected from them by an appropriate punching process, and a conductor layer such as a line conductor 4 is formed. A metal paste mainly composed of a metal powder such as tungsten (W) to be formed is applied by printing, and then a plurality of ceramic green sheets are sequentially laminated and fired at a temperature of about 1600 ° C.

  Further, the surface of the metallized layer such as the line conductor 4 formed on the base body 1 and the side wall 2 is made of a metal having excellent corrosion resistance and wettability with the brazing material 5, specifically having a thickness of 0.5 to 9 μm. The Ni layer and the Au layer having a thickness of 0.5 to 9 μm are preferably deposited sequentially by a plating method to prevent oxidative corrosion of the conductor layer and to braze the silver wire or the like between the outer line conductor 4 a and the lead terminal 6. The joining by 5 can be made stronger.

  As shown in FIG. 1, the line conductor 4 is provided so as to penetrate the side wall at the center thereof across the bottom surfaces of the two steps 3 a of the input / output unit 3 provided so as to face the inner and outer surfaces of the side wall 2. . The input / output unit 3 is formed on the bottom surface of the step 3a formed as a vertical groove shape in which a part of the inner and outer surfaces of the side wall 2 is thinned, but a part of the side wall 2 protrudes from the inner and outer surfaces. And may be formed on the protruding portion. Further, a bonding layer (not shown) made of a metallized layer or the like for attaching a seal ring (not shown) is formed on the upper surface of the side wall 2. The side wall 2 is provided on the upper surface of the base 1 so as to surround the mounting portion 1 a, and an input / output unit 3 having a line conductor 4 provided so as to penetrate the inside and outside of the package A is formed. Further, the lead terminal 6 is joined to the outer line conductor 4 a of the input / output unit 3 via the brazing material 5.

  In the present invention, for example, as shown in FIG. 2, on the line conductor 4 (outer line conductor 4a) on the bottom surface of the step 3a on the outer surface side of the side wall 2, the line conductor 4 extends in a direction orthogonal to the line direction. A plurality of protrusions 4b formed by the metallization method of the same height supporting the lead terminal 6 at the upper end, which are formed over both sides in the line width direction of the conductor 4, are provided. The average particle size of the metal powder constituting the ridge 4b is 1.5 to 6 μm (the average particle size of the metal particles used for the line conductor 4 is usually 1 to 2 μm, and the metal powder used for the metal paste to form the ridge 4b. The average particle diameter of the protrusion 4b is a metal paste using this metal powder, and then printed on the printed layer to be the line conductor 4 by a screen printing method. It is formed by baking together. The lead terminal 6 is brazed while being supported horizontally by a protrusion 4 b and an external carbon jig (not shown) during brazing, and between the outer line conductor 4 a and the periphery of the lead terminal 6. A large meniscus 5a can be formed, and the thickness of the brazing material 5 between the lead terminal 6 and the outer line conductor 4a can be made uniform throughout, and in addition, the arithmetic average of the surface of the protrusion 4b Experiments have confirmed that the roughness can be increased to a level comparable to the ratio of the average particle diameter of the metal powder. As a result, the stress relaxation effect by the brazing material 5 and the anchor effect of the brazing material 5 due to the large arithmetic mean roughness of the surface of the protrusion 4b are obtained, and there is no occurrence of cracks and the reliability of the joint strength is high. High lead terminal 6 bonding can be realized.

As for the height of the protrusion 4b, 10-30 micrometers is preferable. When the thickness is less than 10 μm, the brazing material 5 becomes too thin, the size of the meniscus 5a becomes small, the bonding strength of the lead terminal 6 becomes small, and the stress relaxation effect of the brazing material 5 is almost lost. If the thickness exceeds 30 μm, the meniscus 5a can be enlarged and the tensile stress applied to the brazing material 5 can be dispersed. However, since the thermal expansion coefficient of the brazing material 5 is as large as about 20 × 10 ⁻⁶ / ° C. at room temperature, the semiconductor element A large thermal stress is generated between the brazing material 5 and the substrate 1 made of ceramics such as alumina ceramics (thermal expansion coefficient: 7 × 10 ^{−6 to} 9 × 10 ⁻⁶ / ° C.) when 7 operates. As a result, microcracks are easily generated in the substrate 1.

  The width in the line direction of the line conductor 4 of the protrusion 4b is preferably 75 to 200 μm. If the thickness is less than 75 μm, it is difficult to control the thickness when printing the metal paste that forms the ridges 4b on the outer line conductor 4a, and the thickness of the brazing material 5 varies. Cause cracks. Further, if it exceeds 200 μm, the volume occupied by the protrusion 4b becomes too large and the volume of the brazing material 5 decreases, and the brazing material 5 does not sufficiently exhibit the action as a buffer material in an environmental test such as a temperature cycle, Therefore, microcracks are induced and the bonding strength of the entire brazing material 5 is reduced.

  As shown in FIG. 3, the protrusion 4b of the present invention is a metal having a larger average particle size than a metal paste mainly composed of a metal powder such as tungsten (W) for forming a conductor layer such as a line conductor 4. It is formed by further applying a metal paste using powder onto the dried printed layer to be the line conductor 4. At this time, by setting the particle size of the metal powder to 1.5 to 3 times the particle size of the metal particles constituting the line conductor 4, a large anchor effect that cannot be obtained by the line conductor 4 alone can be realized. That is, if the average particle diameter of the metal particles forming the line conductor 4 is 1 μm, the average particle diameter of the metal powder forming the protrusion 4b is preferably 1.5 to 3 μm, and the average of the metal particles forming the line conductor 4 is If the particle size is 2 μm, the average particle size of the metal powder forming the protrusion 4b is preferably 3 to 6 μm.

  Alternatively, it is possible to roughen the surface of a metal rod, metal piece or the like processed into a predetermined shape to be the protrusion 4b by etching or the like and braze it on the line conductor 4 in advance. Can be reached.

  If the ratio of the average particle diameter of the metal particles to the metal powder is less than 1.5, the effect of differentiating the average particle diameter is almost eliminated and a large anchor effect cannot be obtained, and the joint strength by brazing the lead terminals 6 is improved. I can't see it. Further, if this ratio exceeds 3, a clear boundary line is formed at the boundary between the protrusion 4b and the line conductor 4, and therefore, the bonding strength between the protrusion 4b and the outer line conductor 4a is reduced and is easily peeled off. End up. Therefore, the average particle diameter of the metal powder forming the protrusion 4b is preferably 1.5 to 3 times the average particle diameter of the metal particles forming the line conductor 4.

  Further, when the lead terminal 6 is joined, the lead terminal 6 is formed over the entire circumference of the joint portion of the lead terminal 6 even if the center line in the length direction of the lead terminal 6 is slightly shifted from the center line in the length direction of the line conductor 4. Due to the so-called self-alignment effect due to the surface tension of the large meniscus 5a, the lead terminal 6 can be moved to a desired position and joined. As a result, the variation in bonding strength at the bonding portion between the lead terminal 6 and the line conductor 4 becomes very small, and the bonding strength and bonding reliability can be further improved.

  Thus, in the package A of the present invention, as shown in FIG. 1, the semiconductor element 7 is mounted and fixed on the mounting portion 1a with a low melting point solder such as tin (Sn) -lead (Pb) solder, The inner surface side portion of the side wall 2 of the conductor 4 and the electrode of the semiconductor element 7 are electrically connected by a bonding wire, and a seal ring and a lid 8 are joined to the upper surface of the side wall 2 by a seam welding method or the like. Is hermetically sealed to form a semiconductor device B as a product. This semiconductor device B is used for an information processing device or the like in which the semiconductor element 7 is driven by an electric signal supplied from an external electric circuit, for example, and processes a large amount of information at high speed.

The lid 8 is made of an iron (Fe) -nickel (Ni) -cobalt (Co) alloy, an Fe—Ni alloy, or the like, and is formed in a shape corresponding to the upper surface of the side wall 2. The Fe—Ni—Co alloy and the Fe—Ni alloy have a thermal expansion coefficient (5.5 to 7 × 10 ⁻⁷ / ° C.) that approximates the thermal expansion coefficient of the ceramic substrate 1, so that it is difficult for cracks to occur in the ceramic substrate 1. Further, since it has an appropriate electric resistance, it has an advantage that it can be easily heated to a welding temperature necessary for seam welding.

  Since the semiconductor device B of the present invention is provided with the semiconductor element storage package A of the present invention, the bonding strength of the lead terminals and the bonding reliability are high. It becomes possible to connect, and the reliability of the external device can be improved.

  Examples of the package for housing semiconductor elements of the present invention will be described below.

  For the package having the input / output unit 3 of the present invention and the package having the conventional input / output unit 13 (FIG. 5), the tensile strength of the lead terminal 6 was measured as follows.

  First, in the substrate 1 made of alumina ceramics having the input / output part 3 of FIG. 2, from a metallized layer whose main component is W metal particles having a mean particle size of 1 μm, 1.5 μm and 2 μm with a width of 1.5 mm and a length of 1 mm. On the upper surface of the outer line conductor 4a, when the average particle diameter of the metal particles to be the line conductor 4 is 1 μm, the average particle diameter of the metal powder is 1.25, 1.5, 2, 2.5, 3, 3.25 (μm). When the average particle size of the metal particles is 1.5 μm, the average particle size of the metal powder is 2,2.25, 3, 3.75, 4.5, 4.75 (μm), and when the average particle size of the metal particles as the line conductor 4 is 2 μm, 2.75, A metal paste to be the ridge 4b made of W metal powder of 3, 4, 5, 6, 6.25 (μm) was prepared, and the width of the line conductor in the line direction was set to 75 μm, and three wires were formed at intervals of 300 μm. A sample having ridges 4b formed of metal paste of each particle size 10 each were prepared.

  Next, a lead terminal 6 made of an Fe—Ni—Co alloy having a width of 0.5 mm and a thickness of 0.2 mm is placed on the outer line conductor 4a through a Ag solder (BAg8: JIS Z 3261) in a reducing atmosphere at 850 ° C. Joined.

  As a comparative example, an input / output unit 13 having an outer line conductor 14a having a width of 1.5 mm and a length of 1 mm is formed, and an Fe-Ni-Co alloy having a width of 0.5 mm and a thickness of 0.2 mm is formed on the outer line conductor 14a. Ten lead terminals 6 formed by joining the same Ag solder were prepared.

  Further, in order to compare the effect of making the average particle size of the metal powder forming the protrusion 4b larger than the average particle size of the metal powder of the line conductor 4, three types (1 μm, 1.5 μm, 2 μm) used for the line conductor 4 are compared. The sample of the metal powder of each line conductor 4 is formed by forming three ridges with a width of 100 μm in the direction perpendicular to the line direction of the line conductor at 300 μm intervals with a metal paste having the same average particle diameter as A total of 30 average particle diameters of 30 were formed, and lead terminals 6 were joined in the same manner as described above.

For these samples, after 10 cycles of temperature cycle test (1 cycle is 1 hour at a temperature range of −55 to + 125 ° C.), the lead terminal 6 is bent vertically upward from the joint and pulled upward. The bonding strength was measured by a method (peel method) for determining the bonding strength. The results are shown in Table 1. In Table 1, the value of the bonding strength is an average value of 10 pieces.

  As shown in Table 1, in the package A of the present invention, the strength of the lead pin 6 is improved by more than 46% compared to the case where the protrusion 4b is not provided, and the average particle diameter of the metal powder constituting the protrusion 4b. It has been clarified that the bonding strength of the lead terminal 6 is improved by 24% or more due to the fact that is larger than the average particle diameter of the metal particles constituting the line conductor 4. It was also found that no microcracks were generated.

  It should be noted that the present invention is not limited to the above-described embodiments and examples, and various modifications may be made without departing from the scope of the present invention. For example, when the semiconductor element 7 is an optical semiconductor element such as a semiconductor laser (LD) or a photodiode (PD), the effect of the present invention is the same. In this case, a through hole for attaching an optical fiber is formed on the side wall 2. What is necessary is just to be the structure provided.

An example of embodiment of the package for semiconductor element accommodation of this invention is shown, (a) is a top view of a package, (b) is sectional drawing of a package. (A) is the elements on larger scale of the input / output part of the semiconductor element storage package of FIG. 1, (b) is the elements on larger scale of the semiconductor element storage package of FIG. It is an expanded sectional view near the surface of a ridge. An example of a conventional package for housing a semiconductor element is shown, wherein (a) is a cross-sectional view of the conventional package, and (b) is an enlarged cross-sectional view of a main part of (a). (A), (b) is an expanded sectional view which shows the input-output part in the other example of the conventional package for semiconductor element accommodation, respectively.

Explanation of symbols

1: Base 1a: Placement part 2: Side wall 3: Input / output part 4: Line conductor 4a: Outer line conductor 4b: Projection 5: Brazing material 5a: Meniscus 6: Lead terminal 7: Semiconductor element 8: Cover A: Semiconductor element storage package B: Semiconductor device

Claims (2)

A base made of ceramics having a mounting portion for mounting a semiconductor element on the bottom surface of the recess formed on the upper surface, and the center of the two stepped bottom surfaces provided opposite to the inner and outer surfaces of the side wall of the base A line conductor formed of a metallized layer penetrating the side wall is formed in the portion, and an input / output unit in which a lead terminal is brazed to the line conductor on the outer surface side of the side wall, On the line conductor at the bottom of the step, a plurality of protrusions formed by a metallization method of the same height supporting the lead terminal at the upper end are provided in a direction perpendicular to the line direction of the line conductor, and A package for housing a semiconductor element, characterized in that the average particle size of the metal powder constituting the ridge is 1.5 to 3 times the average particle size of the metal particles constituting the line conductor. The semiconductor element storage package according to claim 1, a semiconductor element mounted and fixed on the mounting portion and electrically connected to the input / output portion, and bonded to the upper surface of the side wall of the base body A semiconductor device comprising a lid.

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