JPS62199108A - Composite surface acoustic wave device - Google Patents
Composite surface acoustic wave deviceInfo
- Publication number
- JPS62199108A JPS62199108A JP4030386A JP4030386A JPS62199108A JP S62199108 A JPS62199108 A JP S62199108A JP 4030386 A JP4030386 A JP 4030386A JP 4030386 A JP4030386 A JP 4030386A JP S62199108 A JPS62199108 A JP S62199108A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- lead frame
- chip
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 35
- 239000002131 composite material Substances 0.000 title description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011800 void material Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は弾性表面波デバイスの構造に係わり、特に量産
性に優れた複合化弾性表面波デバイスに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of a surface acoustic wave device, and particularly to a composite surface acoustic wave device that is excellent in mass production.
一般に、弾性表面波とは、波のエネルギーが媒質の表面
付近にのみ集中して伝搬する弾性波のことをいう。この
弾性表面波の励振としては基板媒質上に縦あるいは横振
動をする振動子を載せ、その表面をたたけばよく、どん
なたたき方をしても振源より相当離れたところで表面波
成分を観測することができる。ただそれをいかに能率よ
く表面波・に変えられるかが問題であり、従来から種々
の方法が提案されている。Generally, a surface acoustic wave is an elastic wave in which the wave energy is concentrated only near the surface of a medium and propagates. To excite this surface acoustic wave, a vibrator that vibrates vertically or horizontally is placed on the substrate medium, and the surface of the vibrator is struck.No matter how you strike, the surface wave component can be observed at a considerable distance from the source. be able to. The problem, however, is how efficiently it can be converted into surface waves, and various methods have been proposed in the past.
その中の１つに直接励振法が提案されている。A direct excitation method has been proposed as one of them.
この直接励振法は、例えば圧電基板表面にマスク蒸着あ
るいはホトエツチング等の手段によって形成された交叉
指状電極に周波数ｆの電界を印加すると電圧作用のため
表面付近がひずむように構成したものである。今、交叉
指状電極の幅をｈ、交叉指状電極間の空隙をａ１交叉指
状電極と隣接する交叉指状電極との間の中心間距離を
ｄ （ｄ＝ａ＋ｈ）、弾性表面波の速度をＶとすると、
中心周波数ｆ０ は次式のようになる。In this direct excitation method, when an electric field of frequency f is applied to interdigital electrodes formed on the surface of a piezoelectric substrate by means such as mask vapor deposition or photoetching, the vicinity of the surface is distorted due to the voltage action. Now, the width of the interdigital electrode is h, the gap between the interdigital electrodes is a1, the center-to-center distance between the interdigital electrode and the adjacent interdigital electrode is d (d=a+h), and the surface acoustic wave If the speed is V,
The center frequency f0 is expressed as follows.
この波は、同相で加えられるため最も強力に励振され、
同様の交叉指状電極で最も感度良く受濡されるようにな
っているｂ
〔発明が解決しようとする問題点〕
しかるに、このような弾性表面波デバイスにおいて、Ｌ
ＳＩと弾性表面波素子を備えた複合化弾性表面波デバイ
スが提案されているが、従来にあってはこのＬＳＩと弾
性表面波素子はプリント基板上に別個に実装された構造
となっていた。このような構造において弾性表面波素子
はハーメチック封止構造が主体であるため、製造設備は
ＩＣ。This wave is the most strongly excited because it is applied in-phase,
Similar interdigitated electrodes are designed to receive wettability with the highest sensitivity.b [Problem to be solved by the invention] However, in such surface acoustic wave devices, L
A composite surface acoustic wave device including an SI and a surface acoustic wave element has been proposed, but in the past, the LSI and the surface acoustic wave element were separately mounted on a printed circuit board. In such a structure, surface acoustic wave elements mainly have a hermetic sealing structure, so the manufacturing equipment is IC.
ＬＳＩ製造用設備が使用できず、専用設備が使用され、
製造コストが高くつくという問題点があった。LSI manufacturing equipment was unavailable and special equipment was used.
There was a problem in that the manufacturing cost was high.
本発明の目的は上述した問題点に鑑みなされたもので、
モールド構造を採用し、ＩＣ５ＬＳＩ製造用設備を使用
できるようにした弾性表面波デバイスを提供するにある
。The purpose of the present invention was made in view of the above-mentioned problems,
An object of the present invention is to provide a surface acoustic wave device that employs a molded structure and can be used with IC5LSI manufacturing equipment.
本発明の弾性表面波デバイスは、ＬＳＩパターンと、弾
性表面波チップとが形成されて成るシリコンチップをリ
ードフレーム上に設け、かつこのシリコンチップ上の弾
性表面波チップの周囲を空隙部で覆い気密性を保つよう
にしてモールディングするようにし、もって上述した目
的を達成せんとするものである。The surface acoustic wave device of the present invention includes a silicon chip on which an LSI pattern and a surface acoustic wave chip are formed, and which is provided on a lead frame, and the surface acoustic wave chip on the silicon chip is surrounded by a void to provide an airtight seal. The objective is to achieve the above-mentioned purpose by molding the product while maintaining its properties.
以下、図に示す実施例を用いて本発明の詳細な説明する
。Hereinafter, the present invention will be explained in detail using embodiments shown in the drawings.
第１図は本発明に係わる弾性表面波デバイスの一実施例
を示す分解図、第２図は同弾性表面波デバイスの一実施
例を示す断面図である。リードフレーム１の両側部には
長手方向に一定間隔おきにリード端子２が設けられてい
る。また、リードフレーム１上にはＬＳＩパターン３が
形成されたシリコンチップ４がグイボンディングされて
おり、さらにこのシリコンチップ４上には弾性表面波チ
ップ５がグイボンディングされている。FIG. 1 is an exploded view showing an embodiment of a surface acoustic wave device according to the present invention, and FIG. 2 is a sectional view showing an embodiment of the surface acoustic wave device. Lead terminals 2 are provided on both sides of the lead frame 1 at regular intervals in the longitudinal direction. Further, a silicon chip 4 on which an LSI pattern 3 is formed is firmly bonded onto the lead frame 1, and a surface acoustic wave chip 5 is further firmly bonded onto this silicon chip 4.
リードフレーム１の上部開口部にはカバー６が被せられ
ており、このカバー６とリードフレーム１とによって弾
性表面波の振動を妨害しないように空隙部７を形成する
ようになっている。このように、リードフレーム１の上
部開口部にカバー６を被せた後、モールド樹脂８によっ
て前記リードフレーム１およびＬＳＩパターン３、弾性
表面波チップ５が形成されているシリコンチップ４を一
体成形した構造としたものである。このように、本発明
においては、ＬＳＩと弾性表面波素子を備えた複合機能
を有するデバイス（弾性表面波素子発振器等）を１パツ
ケージ内に設けた構造となっている。The upper opening of the lead frame 1 is covered with a cover 6, and the cover 6 and the lead frame 1 form a gap 7 so as not to interfere with the vibration of surface acoustic waves. In this way, after covering the upper opening of the lead frame 1 with the cover 6, the lead frame 1, the LSI pattern 3, and the silicon chip 4 on which the surface acoustic wave chip 5 is formed are integrally molded using the molding resin 8. That is. As described above, the present invention has a structure in which a device (such as a surface acoustic wave element oscillator) having multiple functions including an LSI and a surface acoustic wave element is provided in one package.
以上説明したように本発明に係わる弾性表面波デバイス
によれば、ＬＳＩパターンと、弾性表面波チップとが形
成されて成るシリコンチップをリードフレーム上に設け
、かつシリコンチップ上の弾性表面波チップの周囲を空
隙部で覆い気密性を保つようにしてモールディングした
構造としたので、ＩＣ５ＬＳＩ製造用設備を使用するこ
とができるようになり、従来に比べて製造コストの低減
を図れるばかりか、ＬＳＩとの複合化デバイスのため、
実装時の占有面積の極小化を図ることができるという効
果を有する。As explained above, according to the surface acoustic wave device of the present invention, a silicon chip on which an LSI pattern and a surface acoustic wave chip are formed is provided on a lead frame, and a surface acoustic wave chip on the silicon chip is provided. Since the structure is molded by covering the periphery with a void to maintain airtightness, it is now possible to use IC5LSI manufacturing equipment, which not only reduces manufacturing costs compared to conventional methods, but also allows for easier integration with LSI. Because it is a composite device,
This has the effect of minimizing the area occupied during mounting.
第１図は本発明に係わる弾性表面波デバイスの一実施例
を示す分解図、第２図は同弾性表面波デバイスの一実施
例を示す断面図である。
１・・・・・・リードフレーム、
３・・・・・・ＬＳＩパターン、
４・・・・・・シリコンチップ、
５・・・・・・弾性表面波チップ、
７・・・・・・空隙部、
８・・・・・・モールド樹脂。FIG. 1 is an exploded view showing an embodiment of a surface acoustic wave device according to the present invention, and FIG. 2 is a sectional view showing an embodiment of the surface acoustic wave device. 1...Lead frame, 3...LSI pattern, 4...Silicon chip, 5...Surface acoustic wave chip, 7...Void Part 8...Mold resin.
Claims (1)
成るシリコンチップをリードフレーム上に設け、かつこ
のシリコンチップ上の弾性表面波チップの周囲を空隙部
で覆い気密性を保つようにしてモールディングして成る
ことを特徴とする弾性表面波デバイス。A silicon chip on which an LSI pattern and a surface acoustic wave chip are formed is provided on a lead frame, and the surface acoustic wave chip on the silicon chip is molded by covering the periphery with a void to maintain airtightness. A surface acoustic wave device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4030386A JPS62199108A (en) | 1986-02-27 | 1986-02-27 | Composite surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4030386A JPS62199108A (en) | 1986-02-27 | 1986-02-27 | Composite surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62199108A true JPS62199108A (en) | 1987-09-02 |
Family
ID=12576848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4030386A Pending JPS62199108A (en) | 1986-02-27 | 1986-02-27 | Composite surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62199108A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009078214A (en) * | 2007-09-26 | 2009-04-16 | Nippon Paper Industries Co Ltd | Cleaning apparatus of cylindrical filter |
| JP2009207109A (en) * | 2008-01-28 | 2009-09-10 | Epson Toyocom Corp | Piezoelectric oscillator and transmitter |
| US8384486B2 (en) | 2007-07-18 | 2013-02-26 | Seiko Epson Corporation | Piezoelectric oscillator and transmitter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414137A (en) * | 1977-07-05 | 1979-02-02 | Toshiba Corp | Elastic surface wave unit |
-
1986
- 1986-02-27 JP JP4030386A patent/JPS62199108A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414137A (en) * | 1977-07-05 | 1979-02-02 | Toshiba Corp | Elastic surface wave unit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8384486B2 (en) | 2007-07-18 | 2013-02-26 | Seiko Epson Corporation | Piezoelectric oscillator and transmitter |
| US8860516B2 (en) | 2007-07-18 | 2014-10-14 | Seiko Epson Corporation | Piezoelectric oscillator and transmitter |
| JP2009078214A (en) * | 2007-09-26 | 2009-04-16 | Nippon Paper Industries Co Ltd | Cleaning apparatus of cylindrical filter |
| JP2009207109A (en) * | 2008-01-28 | 2009-09-10 | Epson Toyocom Corp | Piezoelectric oscillator and transmitter |
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