JPS62191402A - Element for hydrogen separation - Google Patents
Element for hydrogen separationInfo
- Publication number
- JPS62191402A JPS62191402A JP61033494A JP3349486A JPS62191402A JP S62191402 A JPS62191402 A JP S62191402A JP 61033494 A JP61033494 A JP 61033494A JP 3349486 A JP3349486 A JP 3349486A JP S62191402 A JPS62191402 A JP S62191402A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- metal
- thin film
- separation element
- hydrogen separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000001257 hydrogen Substances 0.000 title claims abstract description 42
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 42
- 238000000926 separation method Methods 0.000 title claims abstract description 39
- 125000004435 hydrogen atom Chemical class [H]* 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000010409 thin film Substances 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 11
- 150000003624 transition metals Chemical class 0.000 claims abstract description 11
- 150000002739 metals Chemical class 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 8
- 239000010935 stainless steel Substances 0.000 abstract description 6
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- 239000000956 alloy Substances 0.000 abstract description 5
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 3
- 229930195733 hydrocarbon Natural products 0.000 abstract description 3
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 3
- 229910002335 LaNi5 Inorganic materials 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910020794 La-Ni Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Gas Separation By Absorption (AREA)
- Laminated Bodies (AREA)
- Hydrogen, Water And Hydrids (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は水素分離用素子に関するものであり、詳しくは
、金属材料よりなり新規な原理に基づく水素分離用素子
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a hydrogen separation element, and more particularly to a hydrogen separation element made of a metal material and based on a novel principle.
水素は、天然ガスやナフサのクランキング等で多量に製
造され、有機製造工業における還元剤を初めとして種々
の用途に供されている。従って、水素を他のガス成分か
ら分離する技術は極めて重要であり、水素分離用モジュ
ール内の分離膜、分離材料と呼ばれる分離素子は、斯る
分離技術の基本となるものである。Hydrogen is produced in large quantities by cranking natural gas or naphtha, and is used for various purposes including as a reducing agent in the organic manufacturing industry. Therefore, technology for separating hydrogen from other gas components is extremely important, and separation elements called separation membranes and separation materials in hydrogen separation modules are the basis of such separation technology.
従来、水素分離用素子としては高分子膜が知られている
。これは、水素分子が他のガス成分に比べて極めて小さ
いために高分子結晶格子間を容易かつ高速度で通過し得
るという性質を利用したものである。Conventionally, polymer membranes have been known as hydrogen separation elements. This takes advantage of the property that hydrogen molecules are extremely small compared to other gas components and can easily pass between polymer crystal lattices at high speed.
本発明の目的は、従来の水素分離用素子とは全く異なる
新規な水素分離用素子を提供することにある。An object of the present invention is to provide a novel hydrogen separation element that is completely different from conventional hydrogen separation elements.
しかして、斯る本発明の目的は、異種金属の薄膜積層体
であって、一方の金、）４は遷移金属又はＩＩＩｂ族金
属からなり、他方の金属は水素吸蔵性金属からなること
を特徴とする水素分離用素子によって達成される。Therefore, the object of the present invention is to provide a thin film laminate of different metals, characterized in that one of the metals (gold) and (4) is made of a transition metal or a group IIIb metal, and the other metal is made of a hydrogen-absorbing metal. This is achieved by a hydrogen separation element.
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
本発明の水素分離用素子は、異種金属の薄膜積層体より
なる。The hydrogen separation element of the present invention is made of a thin film laminate of different metals.
ＴＩ 、 Ｆｅ、Ｃｏ、 Ｎｌ ％Ｃｕ、 Ｐｄ、
Ｍｏ、 Ｗ、 Ｎｂ。TI, Fe, Co, Nl%Cu, Pd,
Mo, W, Nb.
Ｚｒ、ＡＩ等が挙けられるが、銅、ニッケル又はアルミ
ニウムが好ましい。Examples include Zr, AI, etc., but copper, nickel, or aluminum is preferable.
他方の金属は、水素吸蔵性金属、換言すれは、金属水素
化物を形成し得る金属ないしは合金であり、現在までに
発見されている各種の水素吸蔵性金属が使用できるが、
特には希土知−ニツケル合金は、ランタン、セリウム、
サマリウム等の希土類とニッケルの合金であり、／ ％
５０原子多程度の他の金属、例えば、Ｍｎ、Ｃｏ、Ｆ
ｅ、Ｃｒ、Ｃｕ 等を含有する合金でもよい。具体的
には、例えば、ＬａＮｉ５ 、 ＭＭ（Ｎｉ６．６ Ｃ
ｏ（１，、）２（Ｍはミツシュメタルを表わす）、
Ｃ＠ （Ｎ ｌ（１，７、Ｍｎｏ、３ ）４．５ 、
Ｓｍ （Ｎ １６．７ Ｆ １１６．３ ）６、ＳｍＣ
１１１５等が挙げられる。中でもＬ ａ−Ｎ ｉ系合金
、特にＬ ａＮ ｉ ５を薄膜として積層させるが、積
層方法としては、例えば、従来公知の薄膜形成法である
真空蒸着法、スパッタ法又はイオンビーム蒸着法等によ
るのが簡便である。これら方法によれば、両金属は容易
に原子的レベルの密着状態で積層される。The other metal is a hydrogen-absorbing metal, in other words, a metal or an alloy that can form a metal hydride, and various hydrogen-absorbing metals discovered to date can be used.
In particular, rare Tochi-Nickel alloys include lanthanum, cerium,
It is an alloy of rare earth elements such as samarium and nickel, /%
Other metals with more than 50 atoms, such as Mn, Co, F
An alloy containing e, Cr, Cu, etc. may also be used. Specifically, for example, LaNi5, MM (Ni6.6C
o(1,,)2(M represents Mitsushmetal), C@(Nl(1,7,Mno,3)4.5,
Sm (N 16.7 F 116.3)6, SmC
1115 etc. are mentioned. Among them, La-Ni alloy, especially LaNi 5, is laminated as a thin film, and the lamination method may be, for example, a conventionally known thin film forming method such as vacuum evaporation, sputtering, or ion beam evaporation. is simple. According to these methods, both metals can be easily laminated in close contact at an atomic level.
上記各金属の薄膜の厚さは、通常、水素吸蔵性金属膜に
ついてはθ、／−！０μｍ、好ましくは、１０〜３０μ
ｍ、遷移金属又はＩＩＩｂ族全金属膜ついては、ｇｏ
５−ｔｏｏμｍ、好ましくは５０〜６０μｍ とされる
。The thickness of the thin film of each of the above metals is usually θ, /-! for a hydrogen-absorbing metal film. 0 μm, preferably 10-30 μm
For transition metal or group IIIb all metal films, go
5-too μm, preferably 50 to 60 μm.
本発明の水素分離ｆ粧用累子は、実用的には、通常機械
的強度を考慮して多孔性基板上に載置して用いられ、該
多孔性基板としては特に制限はないが、通常ステンレス
焼結基板が使用される。In practical use, the hydrogen-separating f-cosmetic bar of the present invention is usually used by being placed on a porous substrate in consideration of mechanical strength, and although there are no particular restrictions on the porous substrate, it is usually used. A stainless steel sintered substrate is used.
多孔性基板上への載置の態様は、特に制限はないが通常
は遷移金属薄膜又はＩＩＩｂｂ金属薄膜が多孔性基板と
接する態様とされる。斯る態様において、遷移金属又は
ＩＩＩｂ族金属の薄膜は、前記した薄膜形成法の他、メ
ッキ法によって形成することも可能である。なお、遷移
金属としてニッケルを採用する場合、ステンレス焼結基
板上へのニッケル電気メッキは困雅であるので予め銅Ｈ
Ｗ％を施したのちニッケルメッキを行う。The mode of mounting on the porous substrate is not particularly limited, but usually the transition metal thin film or the IIIbb metal thin film is in contact with the porous substrate. In such an embodiment, the thin film of the transition metal or group IIIb metal can be formed by a plating method in addition to the above-described thin film forming method. Note that when using nickel as the transition metal, electroplating of nickel on a stainless steel sintered substrate is difficult, so copper
After applying W%, nickel plating is performed.
前記のようにして得られた本発明の水素分離用素子は、
一般に耐圧容器内にセットされ水素分離用モジュールと
して使用される。The hydrogen separation element of the present invention obtained as described above is
Generally, it is set inside a pressure-resistant container and used as a hydrogen separation module.
モジュールとしては、任意の構造を適宜採用し得るが、
一般的には、例えば、ｉ／図に示した構造のモジュール
とされる。Any structure can be adopted as the module, but
Generally, it is a module having the structure shown in Figure i/, for example.
第１図に示すモジュールにおいては、ノ・ウジングｆｌ
）及び（２）によって耐圧容器が構成されている。両ハ
ウジングは螺合によって固定され、内部には、水素分離
用素子（５）が配置されている。In the module shown in FIG.
) and (2) constitute a pressure-resistant container. Both housings are fixed by screwing, and a hydrogen separation element (5) is arranged inside.
水素分離用素子（５）は、各コーナに設けられたユコの
Ｏ−リング（６）を介しハウジング（２）によって押圧
されて気密化されている。ノーウジング（２）にはガス
導入口（３）が、ハウジング（１）にはガス導出口（４
）が設けられている。The hydrogen separation element (5) is made airtight by being pressed by the housing (2) through Yuko O-rings (6) provided at each corner. The nousing (2) has a gas inlet (3), and the housing (1) has a gas outlet (4).
) is provided.
しかして、本発明の水素分離用素子においては、水素吸
蔵性金属薄膜側に分離すべき混合ガスを導入することが
必要であシ、従って、第１図に示すモジュールにおいて
は、分離用素子（５）の構成は、左側から順次、希土類
−Ｎｉ合金／Ｎｌ ／ Ｃｕ ／ステンレス焼結基板と
なっている（第１図では、これらの各要素は省略した）
。Therefore, in the hydrogen separation element of the present invention, it is necessary to introduce the mixed gas to be separated into the hydrogen-absorbing metal thin film side. Therefore, in the module shown in FIG. The structure of 5) is a rare earth-Ni alloy/Nl/Cu/stainless steel sintered substrate in order from the left side (these elements are omitted in Figure 1).
.
前記水素分離用モジュールの運転においては、混合ガス
の導入は加圧下に行われるが、操作圧力は、通常ｔ −
ｔ Ｏｋｐ ／ｃｒｉ ｃの範囲で十分てあリ、また、
操作温度は任意に選択し得る。In the operation of the hydrogen separation module, the mixed gas is introduced under pressure, and the operating pressure is usually t -
It is sufficient within the range of t Okp /cri c, and
The operating temperature can be selected arbitrarily.
しかして、本発明の水素分離用素子によって分離可能な
混合ガスは特に制限されるものではなく、不活性ガス、
窒素、メタン、エタン、プロパン等の炭化水素ガス等と
水素との混合ガスが挙げられるが、特には、炭化水素ガ
スとの分離に好適である。Therefore, the mixed gas that can be separated by the hydrogen separation element of the present invention is not particularly limited, and includes inert gas,
Examples include mixed gases of hydrogen and hydrocarbon gases such as nitrogen, methane, ethane, and propane, and are particularly suitable for separation from hydrocarbon gases.
本発明の素子による水素分離機構は必ずしも明らかでは
ないが、次のように推定される。Although the hydrogen separation mechanism by the device of the present invention is not necessarily clear, it is estimated as follows.
すなわち、水素吸蔵性金属が触媒的に作用して水素分子
を原子状水素に解離せしめ、この水素が遷移金属又はＩ
ＩＩｂ族金属の格子内を容易に透過して他のガス成分と
分離されるものと推定される。また、このような分離機
構においては、不安定な原子状水素が再結合する前に遷
移金属又はＩＩＩｂ族金属の格子内に導入される必要が
あるが、本発明素子においては、両金属の薄膜を積層体
として両者を密着させているので、解離生成した原子状
水素は、再結合することなく遷移金属の格子内圧導入さ
れる。That is, the hydrogen storage metal acts catalytically to dissociate hydrogen molecules into atomic hydrogen, and this hydrogen is
It is presumed that the gas easily permeates through the lattice of Group IIb metal and is separated from other gas components. In addition, in such a separation mechanism, unstable atomic hydrogen needs to be introduced into the lattice of the transition metal or Group IIIb metal before recombination, but in the device of the present invention, a thin film of both metals is used. Since both are brought into close contact with each other as a laminate, the atomic hydrogen generated by dissociation is introduced into the lattice pressure of the transition metal without recombining.
以下、本発明を実施例に従って更に詳細に説明する。 Hereinafter, the present invention will be explained in more detail according to examples.
実施例１ （１）水素分離用素子の作成 ステンレス焼結基板（直径５■、厚さ３情。Example 1 (1) Creation of hydrogen separation element Stainless steel sintered substrate (diameter 5 cm, thickness 3 cm.
細孔サイズθ、ｊＩｉｍ） に真空蒸着法（タングス
テンヒーターによる熱蒸着）により厚さ０．２μｍ の
銅の薄膜を形成させた。さらにこれを６Ｑ℃に保たれた
ジュールニッケル液（硫酸ニッケル、塩化ニッケル及び
ホウ酸よ後に／ ＯＡ ／ ｄｍ’ ３０分間に制御し
てニッケルメッキを行ない、厚さ５０μｍ のニッケル
薄膜を形成した。このニッケル薄膜上に、特開昭！ｒｇ
−：１７ｑり６号公報にて詳述されているフラッシュ蒸
着法によｆ） ＬａＮ１６のθ、Ｑ１１ｍの薄膜を形成
させて水素分離用素子を作成した。A thin copper film with a thickness of 0.2 μm was formed on the pore size θ, jIim) by vacuum evaporation (thermal evaporation using a tungsten heater). Further, this was nickel plated using a Joule nickel solution (nickel sulfate, nickel chloride, and boric acid) kept at 6Q°C and controlled at OA/dm' for 30 minutes to form a nickel thin film with a thickness of 50 μm. Tokukai Sho!rg on the nickel thin film
-: A hydrogen separation element was prepared by forming a thin film of LaN16 with θ and Q11m using the flash evaporation method detailed in 17QRI No. 6.
（２）水素の分離
上記の水素分離用素子を第７図の如くモジュールとした
。該モジュールを９５℃に保ち、水素とプロパンの混合
ガス（水素ガス濃度ｇｏｄ”）を約９ ｋｐ ／ ｃＩ
Ｉｔの圧力で導入し、ＩＯ時間後素子を通過したガスを
質］着分析計で測定したところ水素ガス濃度はｇｑ、ｉ
％であった。(2) Separation of Hydrogen The above hydrogen separation element was made into a module as shown in FIG. The module was maintained at 95°C, and a mixed gas of hydrogen and propane (hydrogen gas concentration ``god'') was heated at approximately 9 kp/cI.
When the hydrogen gas concentration was measured using a quality analyzer, the hydrogen gas concentration was gq, i.
%Met.
実施例コ
（１）水素分離用素子の作成
ステンレス焼結基板（直径５間、厚さ３ｒｍ、細孔サイ
ズ０．５μｍ）上でアルミニウムを溶融させることによ
シ厚さ３０μｍ の膜を形成させた。このアルミニウム
膜上に実施例１と同様のフラッシュ蒸着法により、Ｌ
ａ Ｎ ｉ ６の０１９μｍ の薄膜を形成させて水素
分離用素子を形成した。Example (1) Creation of hydrogen separation element A film with a thickness of 30 μm was formed by melting aluminum on a stainless steel sintered substrate (diameter 5 cm, thickness 3 rm, pore size 0.5 μm). Ta. On this aluminum film, L
A hydrogen separation element was formed by forming a 019 μm thin film of aN i 6.
（２）水素の分離
上記の水素分離用素子を第１図の如くモジ水素とプロパ
ンの混合ガス（水素ガス濃度ｇθ％）を約９ｋｐ／ｄの
圧力で導入し、ユ６０時間後素子を通過したガスを質量
分析計で測定したところ、水素ガスＪ！に度は９ ｇ、
３％であった。(2) Hydrogen separation A mixed gas of hydrogen and propane (hydrogen gas concentration gθ%) was introduced into the above hydrogen separation element at a pressure of about 9kp/d as shown in Figure 1, and after 60 hours passed through the element. When the gas was measured using a mass spectrometer, hydrogen gas J! The degree is 9 g,
It was 3%.
第１図は本発明に係る水素分離用素子のモジュールの１
例を示す説明図でちゃ、図中、（３）はガス導入口、（
４）はガス導出口、（５）は水素発鈴素子である。
出願人 三愛化成工業株式会社
代理人 弁理士 長谷用 −
（ほか１名）FIG. 1 shows one of the modules of the hydrogen separation element according to the present invention.
This is an explanatory diagram showing an example. In the diagram, (3) is the gas inlet port, (
4) is a gas outlet, and (5) is a hydrogen bell generating element. Applicant San-ai Kasei Kogyo Co., Ltd. Agent Patent Attorney Hase Yo - (1 other person)
Claims (3)
移金属又はIIIｂ族金属からなり他方の金属は水素吸蔵
性金属からなることを特徴とする水素分離用素子。(1) A hydrogen separation element characterized in that it is a thin film laminate of different metals, one metal being a transition metal or a group IIIb metal and the other metal being a hydrogen storage metal.
ビーム蒸着法によつて得られたものであることを特徴と
する特許請求の範囲第１項記載の水素分離用素子。(2) The hydrogen separation element according to claim 1, wherein the thin film laminate is obtained by vacuum evaporation, sputtering, or ion beam evaporation.
ルミニウムであり、水素吸蔵性金属が希土類−ニッケル
系合金であることを特徴とする特許請求の範囲第１項又
は第２項記載の水素分離用素子。(3) Hydrogen separation according to claim 1 or 2, wherein the transition metal or Group IIIb metal is copper, nickel, or aluminum, and the hydrogen storage metal is a rare earth-nickel alloy. Element for use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61033494A JPS62191402A (en) | 1986-02-18 | 1986-02-18 | Element for hydrogen separation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61033494A JPS62191402A (en) | 1986-02-18 | 1986-02-18 | Element for hydrogen separation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62191402A true JPS62191402A (en) | 1987-08-21 |
Family
ID=12388105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61033494A Pending JPS62191402A (en) | 1986-02-18 | 1986-02-18 | Element for hydrogen separation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62191402A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02204302A (en) * | 1989-01-31 | 1990-08-14 | Mitsubishi Heavy Ind Ltd | Method for refining gaseous hydrogen |
| WO1998058524A1 (en) * | 1997-06-17 | 1998-12-23 | Delta Theta Limited | Heating elements |
| WO2000077266A1 (en) * | 1999-06-11 | 2000-12-21 | Sumitomo Electric Industries, Ltd. | Hydrogen-occluding layered material |
| US6329076B1 (en) | 1999-07-16 | 2001-12-11 | Sumitomo Electric Industries, Ltd. | Hydrogen storage material and manufacturing method of the same |
| JP2010070818A (en) * | 2008-09-19 | 2010-04-02 | Tanaka Holdings Kk | Pd-Cu BASED ALLOY SUPERIOR IN HYDROGEN PERMEABILITY |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55130801A (en) * | 1979-02-15 | 1980-10-11 | Hill Eugene Farrell | Separation of hydrogen which use coating titaniummzirconium alloy |
-
1986
- 1986-02-18 JP JP61033494A patent/JPS62191402A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55130801A (en) * | 1979-02-15 | 1980-10-11 | Hill Eugene Farrell | Separation of hydrogen which use coating titaniummzirconium alloy |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02204302A (en) * | 1989-01-31 | 1990-08-14 | Mitsubishi Heavy Ind Ltd | Method for refining gaseous hydrogen |
| WO1998058524A1 (en) * | 1997-06-17 | 1998-12-23 | Delta Theta Limited | Heating elements |
| WO2000077266A1 (en) * | 1999-06-11 | 2000-12-21 | Sumitomo Electric Industries, Ltd. | Hydrogen-occluding layered material |
| US6337146B1 (en) | 1999-06-11 | 2002-01-08 | Sumitomo Electric Industries, Ltd. | Hydrogen-occluding layered material |
| US6329076B1 (en) | 1999-07-16 | 2001-12-11 | Sumitomo Electric Industries, Ltd. | Hydrogen storage material and manufacturing method of the same |
| JP2010070818A (en) * | 2008-09-19 | 2010-04-02 | Tanaka Holdings Kk | Pd-Cu BASED ALLOY SUPERIOR IN HYDROGEN PERMEABILITY |
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