JPS62187349A - Production of photomask - Google Patents
Production of photomaskInfo
- Publication number
- JPS62187349A JPS62187349A JP61028854A JP2885486A JPS62187349A JP S62187349 A JPS62187349 A JP S62187349A JP 61028854 A JP61028854 A JP 61028854A JP 2885486 A JP2885486 A JP 2885486A JP S62187349 A JPS62187349 A JP S62187349A
- Authority
- JP
- Japan
- Prior art keywords
- glass plate
- photoresist
- film
- chromium
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052804 chromium Inorganic materials 0.000 abstract description 24
- 239000011651 chromium Substances 0.000 abstract description 24
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 15
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 15
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 238000004299 exfoliation Methods 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 38
- 238000005406 washing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はフォトマスクの製造方法に関し、特にガラス板
にクロム薄膜でマスクパターンを形成するフォトマスク
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a photomask, and more particularly to a method for manufacturing a photomask in which a mask pattern is formed on a glass plate using a thin chromium film.
従来、半導体装置の製造に利用されるフォトリソグラフ
ィ工程では、透明ガラス板に所要のパターンでクロム薄
膜を形成したフォトマスクが使用される。このため、こ
のフォトマスクを製造するためには、透明ガラス板にク
ロム及び酸化クロムを二層に成膜する工程と、これをフ
ォトレジストを用いて選択エツチングすることによって
所要のクロム薄膜パターンを得る工程とが必要とされる
。2. Description of the Related Art Conventionally, in a photolithography process used for manufacturing semiconductor devices, a photomask is used, in which a thin chromium film is formed in a desired pattern on a transparent glass plate. Therefore, in order to manufacture this photomask, the required chromium thin film pattern is obtained by forming two layers of chromium and chromium oxide on a transparent glass plate, and selectively etching this using a photoresist. process is required.
即ち、この一連の工程を簡単に説明すると、先ず透明ガ
ラス板にクロムと酸化クロムとをスパッタ法あるいは真
空蒸着法で二層に形成した上で、表面のごみや汚れを除
去するために洗浄する。そして、この上に感光材である
フォトレジストを塗布し、このフォトレジストとクロム
膜との密着力を高めるためにプレベータを行い、この上
でフォトレピータあるいはコンタクトプリンタによりマ
スクパターンを露光する。To briefly explain this series of steps, first, two layers of chromium and chromium oxide are formed on a transparent glass plate by sputtering or vacuum evaporation, and then washed to remove dust and dirt from the surface. . Then, a photoresist, which is a photosensitive material, is applied on top of this, prebater is performed to increase the adhesion between the photoresist and the chromium film, and then a mask pattern is exposed using a photorepeater or a contact printer.
次に、フォトレジストを現像し、残されたフォトレジス
トをマスクにしてクロム膜をエツチングし、その後にフ
ォトレジストを除去することにより、所要パターンのク
ロム膜からなるフォトマスクが完成される。Next, the photoresist is developed, the chromium film is etched using the remaining photoresist as a mask, and the photoresist is then removed to complete a photomask made of the chrome film in the desired pattern.
なお、このフォトレジストの現像時には、現像液や現像
時に付着した異物を完全に除去するために十分なカスケ
ード水洗を行っており、水洗終了後にはボストベークを
行っている。Incidentally, when developing this photoresist, sufficient cascade water washing is performed to completely remove the developer and foreign matter attached during development, and after the water washing is completed, a boss bake is performed.
上述した従来のマスク製造方法では、特に透明ガラス板
上へのクロム膜の成膜工程においては、第５図に示すよ
うに四隅に支持片１５を有する正方形の枠状のホルダ１
４を用いて透明ガラス１１をその四隅１２において支持
した状態で順次クロムや酸化クロム等のマスク膜１３の
真空蒸着やスパックを行っている。したがって、この四
隅１２の部分にはクロム膜が成膜されることはなく、ガ
ラスの表面が露呈されたままの状態とされている。In the conventional mask manufacturing method described above, especially in the step of forming a chromium film on a transparent glass plate, a square frame-shaped holder 1 having support pieces 15 at the four corners is used as shown in FIG.
4 to support the transparent glass 11 at its four corners 12, a mask film 13 of chromium, chromium oxide, etc. is sequentially vacuum-deposited or spun. Therefore, no chromium film is formed on the four corners 12, leaving the glass surface exposed.
このため、この上に塗布されるフォトレジストはガラス
に対して直接接触されることになり、一般にこの種のフ
ォトレジストはガラスに対する密着力が小さいことから
、前記したプレベータを行っても両者の密着力を改善す
ることは困難になる。For this reason, the photoresist coated on top of this comes into direct contact with the glass, and since this type of photoresist generally has low adhesion to the glass, the adhesion between the two cannot be achieved even with the pre-prevention process described above. Improving power becomes difficult.
このため、フォトレジストはこの四隅１２の部分におい
て極めて剥がれ易いものとなり、現像後の水洗時にこの
部分のフォトレジストは大部分が剥がれてしまい、その
中の一部は異物となって他の部分に付着し、マスクの外
観不良、即ちパターン不良を生じる原因となっている。For this reason, the photoresist is extremely easy to peel off at the four corners 12, and when washing with water after development, most of the photoresist in these areas peels off, and some of it becomes foreign matter and spreads to other parts. This causes the mask to have a poor appearance, that is, a pattern defect.
本発明のマスク製造方法は、ガラス板の全ての領域にク
ロム膜を成膜することを可能とし、これによりフォトレ
ジストにおける剥がれを防止してマスクの外観不良を防
止するものである。The mask manufacturing method of the present invention makes it possible to form a chromium film on all areas of a glass plate, thereby preventing peeling of the photoresist and preventing poor appearance of the mask.
本発明のマスク製造方法は、ガラス板上にマスクパター
ン用の多層膜を成膜する際に、ガラス板に対する支持箇
所が異なるホルダを用いて夫々の膜を成膜する方法を含
むものである。The mask manufacturing method of the present invention includes a method of forming a multilayer film for a mask pattern on a glass plate using holders that support the glass plate at different locations.
次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例を示す図であり、ここでは透
明ガラス板にクロムと酸化クロムを二層に形成した上で
マクスを形成する例を示している。FIG. 1 is a diagram showing an embodiment of the present invention, in which an example is shown in which two layers of chromium and chromium oxide are formed on a transparent glass plate, and then a mask is formed.
先ず、第１図のように、略正方形をした透明ガラス板１
の表面を洗浄しこれを第１のホルダ４内に支持させてク
ロムの真空蒸着を行い、ガラス板１の下面にクロム膜２
を成膜する。この第１のホルダ４は、前記ガラス板１を
セット可能な正方形の枠状に形成するとともに、その四
隅にはガラス板ｌの四隅１ａを支持するための三角形状
の支持片４ａを一体に形成している。したがって、成膜
されたクロム膜２は、第２図のように前記支持片４ａに
対応するガラス板１の四隅１ａ以外の領域に形成される
ことになり、これら四隅１ａ箇所には形成されず、この
箇所ではガラス板１の表面が露呈された状態とされる。First, as shown in Fig. 1, a transparent glass plate 1 having a substantially square shape is prepared.
The surface of the glass plate 1 is cleaned and supported in the first holder 4, and chromium is vacuum deposited on the bottom surface of the glass plate 1.
Deposit a film. This first holder 4 is formed into a square frame shape into which the glass plate 1 can be set, and triangular support pieces 4a for supporting the four corners 1a of the glass plate 1 are integrally formed at the four corners of the first holder 4. are doing. Therefore, the formed chromium film 2 is formed in areas other than the four corners 1a of the glass plate 1 corresponding to the support pieces 4a, as shown in FIG. 2, and is not formed at these four corners 1a. , the surface of the glass plate 1 is exposed at this location.
次に、このガラス板ｌを第１のホルダ４から取り出し、
今度は第３図のように第２のホルダ５内にセットしてガ
ラス板１の下面、即ち前記クロム膜２上に重ねた状態に
真空蒸着法によって酸化クロム膜３を成膜する。この第
２のホルダ５は、正方形の枠状に形成する点は第１のホ
ルダ４と同じであるが、支持片５ａは第２のホルダ５の
四辺の略中央位置に夫々形成しており、ガラス板１の各
辺の中央位置１ｂを支持するようになっている。Next, take out this glass plate l from the first holder 4,
This time, as shown in FIG. 3, the glass plate 1 is set in the second holder 5, and a chromium oxide film 3 is formed on the lower surface of the glass plate 1, that is, on the chromium film 2, by vacuum evaporation. This second holder 5 is the same as the first holder 4 in that it is formed into a square frame shape, but the support pieces 5a are formed at approximately the center of each of the four sides of the second holder 5, The center position 1b of each side of the glass plate 1 is supported.
したがって、成膜された酸化クロム膜３は、第４図のよ
うにガラス板１の各辺中央位置１ｂを除く領域に形成さ
れることになり、この中央位置１ｂには成膜され□ない
。Therefore, the formed chromium oxide film 3 is formed in an area other than the central position 1b on each side of the glass plate 1 as shown in FIG. 4, and is not formed at this central position 1b.
このため、同図のように最終的にはガラス板１の四隅１
ａには酸化クロム膜３が成膜され、各辺中央位置１ｂに
はクロム膜２が成膜されることになる。勿論、他の領域
にはクロム膜２と酸化クロム膜３が二層に形成されてお
り、これによりガラス板１の表面にはクロム膜或いは酸
化クロム膜が形成されていない箇所、つまりガラス面が
露呈される箇所が生じることはない。Therefore, as shown in the figure, the four corners of the glass plate 1
A chromium oxide film 3 is formed on the area a, and a chromium film 2 is formed on the center position 1b of each side. Of course, in other areas, the chromium film 2 and the chromium oxide film 3 are formed in two layers, so that there are areas on the surface of the glass plate 1 where no chromium film or chromium oxide film is formed, that is, the glass surface. There will be no exposed areas.
したがって、その後の工程においてフォトレジストを全
面に塗布しても、フォトレジストはガラス板１の全面に
おいてクロム膜２あるいは酸化クロム膜３と接触するこ
とになり、ガラス面に接触することはない。これにより
、プリベータによってフォトレジストとガラス板１との
密着力を向上し、さらに後工程における現像や水洗、エ
ツチング等の工程においてもフォトレジストの剥がれが
生じることはなく、パターン不良のない高精度のマスク
の製造が可能とされる。Therefore, even if a photoresist is applied to the entire surface in a subsequent step, the photoresist will come into contact with the chromium film 2 or the chromium oxide film 3 over the entire surface of the glass plate 1, and will not come into contact with the glass surface. As a result, the adhesion between the photoresist and the glass plate 1 is improved by the pre-beta, and furthermore, the photoresist does not peel off during subsequent processes such as development, water washing, etching, etc., and high precision without pattern defects is achieved. It is possible to manufacture masks.
なお、この方法ではガラス板の四隅や各辺中央位置には
クロム膜又は酸化クロム膜のいずれか一方した成膜され
ていないが、通常このガラス板の周辺領域にはマスクパ
ターンを形成することはないので、フォトマスクとして
の品質を低下させることは全くない。Note that in this method, either a chromium film or a chromium oxide film is not formed at the four corners or at the center of each side of the glass plate, but normally a mask pattern is not formed in the peripheral area of the glass plate. There is no deterioration in the quality of the photomask.
また、この実施例ではクロム膜と酸化クロム膜とを二層
に形成した例を示したが、これらの膜と他の膜とを二層
或いは三層以上に形成する場合でも同様に適用できる。Further, although this embodiment shows an example in which a chromium film and a chromium oxide film are formed in two layers, the present invention can be similarly applied to a case in which these films and other films are formed in two or three or more layers.
更に、各膜をスパッタ法等他の方法で成膜する場合でも
同じである。Furthermore, the same applies even when each film is formed by other methods such as sputtering.
以上説明したように本発明は、ガラス板上にマスクパタ
ーン用の多層膜を成膜する際に、ガラス板に対する支持
箇所が異なるホルダを用いて夫々の膜を成膜しているの
で、ガラス板の全面には少なくとも一層の膜が形成され
ることになり、ガラス板の表面が露呈されることはない
。このため、マスクのパターン形成に用いるフォトレジ
ストの密着性をガラス板の全面において高めることがで
き、フォトレジストの剥がれを防止してパターン不良の
発生を防止し、高品質のマスクの製造を実現することが
できる。As explained above, in the present invention, when forming a multilayer film for a mask pattern on a glass plate, each film is formed using a holder that supports the glass plate at different points. At least one layer of film will be formed on the entire surface of the glass plate, and the surface of the glass plate will not be exposed. For this reason, the adhesion of the photoresist used for mask pattern formation can be improved over the entire surface of the glass plate, preventing the photoresist from peeling off and causing pattern defects, thereby realizing the production of high-quality masks. be able to.
第１図は本発明の一実施例の一工程を示す斜視図、第２
図はクロム膜を成膜した状態の平面図、第３図は同実施
例の他の工程を示す斜視図、第４図は酸化クロム膜を成
膜した状態の平面図、第５図は従来における問題を説明
するための斜視図である。
１・・・ガラス板、１ａ・・・四隅、ｌｂ・・・各辺中
央位置、２・・・クロム膜、３・・・酸化クロム膜、４
・・・第１のホルダ、４ａ・・・支持片、５・・・第２
のホルダ、５ａ・・・支持片、１１・・・ガラス板、１
２・・・四隅、１３・・・マスク膜、１４・・・ホルダ
、１５・・・支持片。
第１図
第２図
第３図
第４図Fig. 1 is a perspective view showing one step of an embodiment of the present invention;
The figure is a plan view of a state in which a chromium film has been formed, FIG. 3 is a perspective view showing other steps in the same embodiment, FIG. 4 is a plan view of a state in which a chromium oxide film has been formed, and FIG. 5 is a conventional FIG. 2 is a perspective view for explaining the problem in FIG. DESCRIPTION OF SYMBOLS 1...Glass plate, 1a...Four corners, lb...Center position on each side, 2...Chromium film, 3...Chromium oxide film, 4
...first holder, 4a...support piece, 5...second
holder, 5a... support piece, 11... glass plate, 1
2...Four corners, 13...Mask film, 14...Holder, 15...Support piece. Figure 1 Figure 2 Figure 3 Figure 4
Claims (2)
、この多層膜上に所要パターンのフォトレジストを形成
し、このフォトレジストをマスクとして前記多層膜を選
択エッチングしてフォトマスクを形成する方法において
、前記多層膜を成膜する際に、前記ガラス板に対する支
持箇所が異なるホルダを順序的に用いて夫々の膜を成膜
することを特徴とするフォトマスクの製造方法。(1) A multilayer film for a mask pattern is formed on a glass plate, a photoresist with a desired pattern is formed on this multilayer film, and the multilayer film is selectively etched using this photoresist as a mask to form a photomask. A method for manufacturing a photomask, characterized in that, when forming the multilayer film, each film is formed using holders having different support locations relative to the glass plate in order.
を形成し、第１のホルダはガラス板の四隅を支持し、第
２のホルダはガラス板の四辺の各中央位置を支持して夫
々の成膜を行ってなる特許請求の範囲第１項記載のフォ
トマスクの製造方法。(2) The first and second holders are used in order to form a two-layer film, with the first holder supporting the four corners of the glass plate, and the second holder supporting each of the four sides of the glass plate at the center position. 2. The method of manufacturing a photomask according to claim 1, wherein each film is formed while supporting the photomask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61028854A JPS62187349A (en) | 1986-02-14 | 1986-02-14 | Production of photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61028854A JPS62187349A (en) | 1986-02-14 | 1986-02-14 | Production of photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62187349A true JPS62187349A (en) | 1987-08-15 |
Family
ID=12259965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61028854A Pending JPS62187349A (en) | 1986-02-14 | 1986-02-14 | Production of photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62187349A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02198835A (en) * | 1989-01-27 | 1990-08-07 | Toppan Printing Co Ltd | Glass base plate for master |
| EP0468274A2 (en) * | 1990-07-12 | 1992-01-29 | Kabushiki Kaisha Toshiba | Method of forming an electrode on a mask for manufacturing semiconductor devices, spinner for applying resist to a semiconductor-manufacturing mask, and mask-housing case |
-
1986
- 1986-02-14 JP JP61028854A patent/JPS62187349A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02198835A (en) * | 1989-01-27 | 1990-08-07 | Toppan Printing Co Ltd | Glass base plate for master |
| EP0468274A2 (en) * | 1990-07-12 | 1992-01-29 | Kabushiki Kaisha Toshiba | Method of forming an electrode on a mask for manufacturing semiconductor devices, spinner for applying resist to a semiconductor-manufacturing mask, and mask-housing case |
| EP0468274A3 (en) * | 1990-07-12 | 1993-07-28 | Kabushiki Kaisha Toshiba | Method of forming an electrode on a mask for manufacturing semiconductor devices, spinner for applying resist to a semiconductor-manufacturing mask, and mask-housing case |
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