JPS6218713A - Developing device - Google Patents

Developing device

Info

Publication number
JPS6218713A
JPS6218713A JP15861685A JP15861685A JPS6218713A JP S6218713 A JPS6218713 A JP S6218713A JP 15861685 A JP15861685 A JP 15861685A JP 15861685 A JP15861685 A JP 15861685A JP S6218713 A JPS6218713 A JP S6218713A
Authority
JP
Japan
Prior art keywords
substrate
resist
chuck
developing device
developing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15861685A
Other languages
Japanese (ja)
Inventor
Hiroyuki Shigemura
茂村 弘之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15861685A priority Critical patent/JPS6218713A/en
Publication of JPS6218713A publication Critical patent/JPS6218713A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the sensitivity of a resist from decreasing due to the treating solution and the temperature drop of a substrate by providing a substrate heating mechanism at a chuck for rotating the substrate. CONSTITUTION:A vacuum chuck 2 mounted in a chamber 1 of a developing device is rotated by a motor, coated with a resist, and rotated around a vertical shaft while holding a selectively exposed substrate 3. A layer 4 is developed by spraying a developer 6 and contacting the developer with the substrate 3. At this time a voltage is applied by a power source 8 to a heater 7 contained in the chuck 2 to heat the substrate 3. Thus, it prevents a treating solution produced when spray-developing a positive type radiation sensitive resist with a developing solution of an organic solvent type and the substrate from decreasing, thereby performing the high sensitivity of the resist.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路のパターン形成に使用さ詐る現
像装置に係シ、特に、ポジ型放射線感応レジストを、有
機溶剤系の処理液によりスプレー現像する為の現像装置
の改良に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a developing device used for pattern formation of semiconductor integrated circuits, and in particular, the present invention relates to a developing device used for forming patterns of semiconductor integrated circuits. This invention relates to improvement of a developing device for spray developing.

〔従来の技術〕[Conventional technology]

従来、この種の現像装置に、自動化の容易性。 Conventionally, this type of developing device has the advantage of ease of automation.

低欠陥レベルでるる事、レジストハターンの寸法精度が
良い点等の理由から、回転する基板上に、現像液、リン
ス液をノズルからスプレー状に噴射することにより現像
処理を行なう、いわゆるスプレ一式現像装置であった。
Due to its low defect level and high dimensional accuracy of the resist pattern, the development process is carried out by spraying developer and rinsing liquid from a nozzle onto a rotating substrate, so-called spray development. It was a device.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

近年、半導体集積回路の微細化、高精度化の要求に応じ
てD    UV  レジスト、電子線レジスep t−、x、ルジスト等の放射線感応レジストが開発さn
%実用化されつつある。こしらのレジストは一般に現像
処理液として有機系の溶剤、例えばケトン類アルコール
類等が使」されているものが多い。ところがこれらの有
機溶剤を用いた現像液。
In recent years, radiation sensitive resists such as D UV resist, electron beam resist EP T-,
% is being put into practical use. Many of these resists generally use organic solvents, such as ketone alcohols, as the developing solution. However, developers using these organic solvents.

リンス液は一般に揮発性が高く、上述したスプレ一方式
の現像装置に使用されると、スプレー状になる時、気化
熱が奪われる為処理液温度、被処理基板の温度が著しく
低下する。この温度低下は、前記レジストがポジ型放射
線感応レジストの場合、感度を著しく低下せしめ、半導
体集積回路の製造において生産性を悪くする原因となっ
ていた。
The rinsing liquid is generally highly volatile, and when used in the above-mentioned spray one-type developing device, the temperature of the processing liquid and the temperature of the substrate to be processed are significantly lowered because the heat of vaporization is taken away when the rinsing liquid becomes a spray. When the resist is a positive radiation-sensitive resist, this temperature drop causes a significant decrease in sensitivity and causes a decrease in productivity in the manufacture of semiconductor integrated circuits.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の現像装置は、被処理基板全回転せしめるチャッ
クに該基板を加熱する機構を有している。
The developing device of the present invention has a chuck that completely rotates the substrate to be processed and a mechanism for heating the substrate.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明による現像装置の一実施例を示す概略図
である。
FIG. 1 is a schematic diagram showing an embodiment of a developing device according to the present invention.

現像装置のチャンバー1内に設置さnた真空チャック2
はモーターにより回転し、レジスト4が塗布され、次い
で選択露光さnた基板3を水平に保持しながら、現像処
理中、所定の回転数で垂直な軸まわりに回転させる。レ
ジスト層の現像は、ノズル5より現像液6がスプレー状
に放出さnlこnが前記回転基板にあたることによりな
さfる。
A vacuum chuck 2 installed inside the chamber 1 of the developing device
is rotated by a motor, and while the substrate 3 coated with the resist 4 and then selectively exposed is held horizontally, it is rotated around a vertical axis at a predetermined rotational speed during the development process. The resist layer is developed by spraying a developer 6 from a nozzle 5 and hitting the rotating substrate.

この時回転する真空チャックに内蔵さnたヒーター7に
交流又は直流電源8より、真空チャックの回転軸に具備
さ几た端子9を介して任意の電圧が印加ざn1基板が任
意温度に加熱さ詐る。真空チャックに内蔵さnたヒータ
ーは、第2図に示す様に、基板を均一に加熱する配置が
とらnている。
At this time, an arbitrary voltage is applied from an AC or DC power supply 8 to a heater 7 built into the rotating vacuum chuck through a terminal 9 provided on the rotating shaft of the vacuum chuck, and the substrate is heated to an arbitrary temperature. deceive The heater built into the vacuum chuck is arranged to uniformly heat the substrate, as shown in FIG.

本発明による現像装置ヲ用いると、例えば東しく株)製
のポジ型電子線感応しジス)EBR−9の感度は、現像
液としてメチルイソブチルケトンとイソプロピルアルコ
ールの混合比〔容積比〕8対2のものを用いて3分間ス
プレー現像を行なったところ、前述した通常のスプレー
現像では、 約15μC/cm  (加速電圧20 K
V )でメッタものが5μC/c rn  に同上した
When the developing device according to the present invention is used, for example, the sensitivity of the positive-type electron beam sensitive resistor EBR-9 manufactured by Toshishiki Co., Ltd. is determined by the mixing ratio [volume ratio] of methyl isobutyl ketone and isopropyl alcohol as the developing solution: 8:2. When spray development was carried out for 3 minutes using a
V), the Metta value was 5 μC/c rn as above.

前記実施例は、チャックにヒーター會内蔵シた機構に関
して詳細全説明したが、本発明tま、こnに限定さnる
ものではなく、チャックの基板加熱機構としてはヒート
ポンプをチャックに内蔵し、これをチャックの回転軸部
で加熱し、基板に熱伝導させる方法も適用できる。
Although the above-mentioned embodiment has fully explained in detail the mechanism in which the chuck has a built-in heater, the present invention is not limited to this, and the substrate heating mechanism of the chuck includes a heat pump built in the chuck, A method can also be applied in which this is heated by the rotating shaft of the chuck and the heat is conducted to the substrate.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、基板全回転せしめるチャ
ックに基板加熱の機構を設けることにより、有機溶剤系
の現像処理液を便用してポジ型放射線感応レジストのス
プレー現像を行なう場合に生じる処理液及び基板の温度
低下によるレジスト感度の著しい低下を防止し、レジス
トの高感度化が達成でき、高い生産性を有する半導体集
積回路の製造を可能にした。
As explained above, the present invention provides a mechanism for heating the substrate in a chuck that rotates the substrate completely, thereby improving the processing that occurs when spray developing a positive radiation-sensitive resist using an organic solvent-based developing solution. This prevents a significant drop in resist sensitivity due to a drop in the temperature of the liquid and substrate, making it possible to achieve high sensitivity of the resist, and making it possible to manufacture semiconductor integrated circuits with high productivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る現像装置の一実施例を示す概略図
、第2図は真空チャックに内蔵するヒーターの配置を示
す図である。 1・・・・・・チャンバー、2・・・・・・真空チャッ
ク、3・・・・・・基板、4・・・・・・レジスト、5
・・・・・・スプレーノズル、6・・・・・・現像液、
7・・・・・・ヒーター、8・・・・・・交流(直流)
電源、9・・・・・・端子。 二ニー入 代理人 弁理士  内 原   ヨ 東1図 第2図
FIG. 1 is a schematic diagram showing an embodiment of a developing device according to the present invention, and FIG. 2 is a diagram showing the arrangement of a heater built into a vacuum chuck. 1...Chamber, 2...Vacuum chuck, 3...Substrate, 4...Resist, 5
...Spray nozzle, 6...Developer,
7... Heater, 8... Alternating current (DC)
Power supply, 9...terminal. 2nd Attorney Patent Attorney Uchihara Yoto Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims]  ポジ型放射線感応レジストを用いたパターン形成にお
ける現像処理に用いられる、被処理基板を回転させなが
ら有機溶剤系の現像液及びリンス液を噴射するスプレー
現像装置において、被処理基板を回転せしめるチャック
に、基板加熱機構を有することを特徴とした現像装置。
In a spray developing device that sprays an organic solvent-based developer and a rinse solution while rotating the substrate, which is used for development processing in pattern formation using a positive radiation-sensitive resist, a chuck that rotates the substrate is A developing device characterized by having a substrate heating mechanism.
JP15861685A 1985-07-17 1985-07-17 Developing device Pending JPS6218713A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15861685A JPS6218713A (en) 1985-07-17 1985-07-17 Developing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15861685A JPS6218713A (en) 1985-07-17 1985-07-17 Developing device

Publications (1)

Publication Number Publication Date
JPS6218713A true JPS6218713A (en) 1987-01-27

Family

ID=15675600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15861685A Pending JPS6218713A (en) 1985-07-17 1985-07-17 Developing device

Country Status (1)

Country Link
JP (1) JPS6218713A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019560A (en) * 2003-06-24 2005-01-20 D S Giken:Kk Coating device
JP2006278856A (en) * 2005-03-30 2006-10-12 Tech In Tech Co Ltd Equipment, system and metho for dsubstrate processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019560A (en) * 2003-06-24 2005-01-20 D S Giken:Kk Coating device
JP2006278856A (en) * 2005-03-30 2006-10-12 Tech In Tech Co Ltd Equipment, system and metho for dsubstrate processing

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