JPH0525383B2 - - Google Patents
Info
- Publication number
- JPH0525383B2 JPH0525383B2 JP25012286A JP25012286A JPH0525383B2 JP H0525383 B2 JPH0525383 B2 JP H0525383B2 JP 25012286 A JP25012286 A JP 25012286A JP 25012286 A JP25012286 A JP 25012286A JP H0525383 B2 JPH0525383 B2 JP H0525383B2
- Authority
- JP
- Japan
- Prior art keywords
- developer
- development
- ion concentration
- resist film
- hydrogen ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 13
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010670 acid alkali reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000001139 pH measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、集積回路や半導体などの製造の際
に用いられるレジスト膜の現像処理方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for developing a resist film used in the manufacture of integrated circuits, semiconductors, and the like.
従来この種の装置として第３図に示すものがあ
つた。第３図において、回転板５上にパターン投
影後のレジスト膜３が被着された半導体ウエハ４
を減圧吸着法等で保持させ、適量の現像液２を現
像液吐出用ノズル６によりレジスト膜３上に滴下
し、回転板５を回転させながらリンス液吐出用ノ
ズル７によりリンス液を吐出させて現像処理を行
う。
A conventional device of this type is shown in FIG. In FIG. 3, a semiconductor wafer 4 is coated with a resist film 3 after pattern projection on a rotating plate 5.
is held by a vacuum suction method or the like, and an appropriate amount of developer 2 is dropped onto the resist film 3 using a developer discharge nozzle 6, and while rotating the rotary plate 5, the rinse solution is discharged from a rinse solution discharge nozzle 7. Perform development processing.
次に従来技術による現像方法について説明す
る。パターンを投影したレジスト膜３を被着した
半導体ウエハ４を回転板５上に載置し（第３図
ａ）、上記レジスト膜３上に現像液吐出用ノズル
６により、現像液２を滴下させる。この時、通常
現像液２がレジスト膜３上に均一に広がるよう
に、回転板８により半導体ウエハ４を回転させる
（第３図ｂ）。その後、所定時間現像液２がレジス
ト膜３上に盛られた状態で静止させ、現像を進行
させる（第３図ｃ）。所定の現像時間が完了後、
回転板５を回転させながらリンス液吐出用ノズル
７によりリンス液を吐出させ、レジスト膜２上の
レジストが溶解している現像液を除去し（第３図
ｄ）、さらに半導体ウエハ上を洗浄後、高速回転
により乾燥させ、現像処理工程を完了する。すな
わち、従来の現像処理方法では現像処理が事前に
決定された処理時間によつて制御されている。 Next, a developing method according to the prior art will be explained. A semiconductor wafer 4 with a resist film 3 on which a pattern has been projected is placed on a rotating plate 5 (FIG. 3a), and a developer 2 is dripped onto the resist film 3 from a developer discharge nozzle 6. . At this time, the semiconductor wafer 4 is usually rotated by the rotary plate 8 so that the developer 2 is spread uniformly on the resist film 3 (FIG. 3b). Thereafter, the developer 2 is allowed to stand still on the resist film 3 for a predetermined period of time to allow development to proceed (FIG. 3c). After the specified development time is completed,
While rotating the rotating plate 5, the rinsing liquid is discharged from the rinsing liquid discharging nozzle 7 to remove the developer in which the resist on the resist film 2 has been dissolved (FIG. 3d), and after cleaning the semiconductor wafer. , and is dried by high-speed rotation to complete the development process. That is, in the conventional development processing method, the development processing is controlled by a processing time determined in advance.
従来の現像処理方法による現像では、上記のよ
うに全てのウエハを同一の所定時間で現像を行な
うので、ウエハごとのレジスト膜厚のばらつきの
ためや、溶解速度の関数である現像液の濃度・温
度の変化のため、レジスト膜３が第４図に示すよ
うなオーバー現像（第４図ａ）やアンダー現像
（第４図ｂ）されてしまい所望のパターンの境界
８が得られない等の問題点があつた。
In development using conventional development processing methods, all wafers are developed for the same predetermined time as described above, so there is a risk of variations in the resist film thickness from wafer to wafer, and the concentration of the developer solution, which is a function of the dissolution rate. Due to temperature changes, the resist film 3 is overdeveloped (FIG. 4a) or underdeveloped (FIG. 4b) as shown in FIG. 4, resulting in problems such as not being able to obtain the desired pattern boundary 8. The dot was hot.
この発明は上記のような問題点を解消するため
になされたもので、レジスト現像時における解像
力・寸法制御の再現性を向上させることのできる
現像処理方法を得ることを目的とする。 The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a developing processing method that can improve the resolving power and reproducibility of dimensional control during resist development.
この発明に係る現像処理方法は、現像処理の際
レジスト膜上に滴下された現像液中に水素イオン
濃度測定用のセンサを挿入し、上記センサに接合
されたPH計により、静止された半導体ウエハ上の
レジスト膜上の水素イオン濃度（PH）を測定し、
上記測定された水素イオン濃度によつて上記半導
体ウエハを静止しておく現像処理時間を制御しよ
うとしたものである。
In the development processing method according to the present invention, a sensor for measuring hydrogen ion concentration is inserted into a developer solution dropped onto a resist film during development processing, and a PH meter connected to the sensor is used to detect a semiconductor wafer held still. Measure the hydrogen ion concentration (PH) on the upper resist film,
This is an attempt to control the development processing time during which the semiconductor wafer is kept stationary based on the measured hydrogen ion concentration.
この発明における水素イオン濃度測定用のセン
サ及びPH計及び水素イオン濃度（PH）により現
像処理時間を制御する装置は、事前に決定された
最適現像を達成する水素イオン濃度（またはPH）
に変化するまで、現像液で浸されたレジスト膜を
被着した半導体ウエハを静止しておくことにより
現像処理時間を制御するので、常に最適現像条件
で現像が行えるよう現像液の水素イオン濃度
（PH）を監視する。
The sensor for measuring hydrogen ion concentration, the PH meter, and the device for controlling the development processing time based on the hydrogen ion concentration (PH) in this invention are capable of controlling the hydrogen ion concentration (or PH) to achieve a predetermined optimum development.
The development processing time is controlled by keeping the semiconductor wafer coated with the resist film immersed in the developer stationary until the resist film changes, so that the hydrogen ion concentration of the developer ( PH).
以下、この発明の一実施例を図を用いて説明す
る。現在一般に広く使用されているノボラツク樹
脂−ナフトキノンジアジド系のポジ型フオトレジ
ストは、光露光前はアルカリ水溶液に不溶であつ
たものが、光露光部分のみがアルカリ水溶液に可
溶になることを利用している。上記アルカリ現像
液を用いたレジストの現像処理の際には、レジス
トの現像が進行するにつれ、第５図に示すような
酸−アルカリ反応が起こるので、現像液中の水酸
化物イオン濃度が減少する（第６図）。したがつ
て、水素イオン濃度が増加しPHが減少する。第１
図は回転板５に載置された所望パターンを投影し
たフオトレジスト膜３が被着した半導体ウエハ４
上に、現像液吐出用ノズル６によつて現像液２を
滴下し、フオトレジスト膜３に均一に広がるよう
回転板５によつて半導体ウエハ４を回転させた後
静止し、水素イオン濃度測定用センサ１を上記フ
オトレジスト膜３上の現像液２中に挿入した状態
である。この静止状態中に現像が進行し、水酸化
物イオン濃度が減少していくようすをPH計によつ
て監視し、事前に決定しておいた最適の現像時の
水酸化物イオン濃度に達した時（第６図ａ点）
に、手動または自動制御装置により回転板５を回
転させると共に、リンス液吐出用ノズル７により
リンス液を吐出させフオトレジスト膜３上の現像
液２を除去し現像を終了させる。さらに半導体ウ
エハを洗浄後、高速回転により乾燥させる。その
結果、第２図に示すような再現性の良い所望のレ
ジストパターンを得ることができる。
An embodiment of the present invention will be described below with reference to the drawings. The novolac resin-naphthoquinone diazide positive photoresist that is currently widely used takes advantage of the fact that only the exposed areas become soluble in an alkaline aqueous solution, although they were insoluble in an alkaline aqueous solution before being exposed to light. ing. During resist development using the above alkaline developer, as the development of the resist progresses, an acid-alkali reaction occurs as shown in Figure 5, so the hydroxide ion concentration in the developer decreases. (Figure 6). Therefore, the hydrogen ion concentration increases and the PH decreases. 1st
The figure shows a semiconductor wafer 4 placed on a rotating plate 5 and covered with a photoresist film 3 on which a desired pattern is projected.
The developer 2 is dropped onto the top by the developer discharge nozzle 6, and the semiconductor wafer 4 is rotated by the rotary plate 5 so as to spread uniformly on the photoresist film 3, and then stopped. The sensor 1 is inserted into the developer 2 on the photoresist film 3. During this static state, the progress of development and the decrease in hydroxide ion concentration was monitored using a PH meter, and the hydroxide ion concentration at the optimum development time determined in advance was reached. Time (point a in Figure 6)
Next, the rotating plate 5 is rotated manually or by an automatic control device, and the rinsing liquid is discharged from the rinsing liquid discharging nozzle 7 to remove the developer 2 on the photoresist film 3 and complete the development. Furthermore, after cleaning the semiconductor wafer, it is dried by high-speed rotation. As a result, a desired resist pattern with good reproducibility as shown in FIG. 2 can be obtained.
尚、上記実施例においてはポジ型フオトレジス
トのアルカリ水溶液による現像処理にこの発明を
適用したが、ポジ型、ネガ型にかかわらず、また
フオトレジストだけにとどまらずEBレジストや
Ｘ線レジストに対してもこの発明を適用すること
ができる。要するに、この発明においては現像液
として酸・アルカリを使用し、現像処理中に水素
イオン濃度（PH）が変化する現像処理に適用する
ことができる。これらの場合にも上述の効果が得
られる。 In the above embodiments, the present invention was applied to the development treatment of a positive photoresist with an alkaline aqueous solution, but it is applicable to both positive and negative photoresists, and not only to photoresists but also to EB resists and X-ray resists. This invention can also be applied to. In short, this invention can be applied to development processing in which an acid or alkali is used as a developer and the hydrogen ion concentration (PH) changes during the development processing. The above-mentioned effects can also be obtained in these cases.
また、実施例においては現像方式としてパドル
方式（現像液を滴下してから静止させる方式）に
適用したが、この方式以外でも小さな現像槽を使
つたデイツプ方式にもこの発明を適用でき、この
場合にも上述と同様の効果を得ることができる。 In addition, in the embodiment, a paddle method (a method in which the developer is dropped and then allowed to stand still) was used as the development method, but the present invention can also be applied to a dip method using a small developer tank other than this method, and in this case, The same effect as described above can also be obtained.
以上のように、この発明によれば現像処理中の
現像液の水素イオン濃度（PH）を監視し、現像処
理時間を制御するので、現像力が高く寸法制御の
再現性の良いレジストパターンを得ることができ
る。
As described above, according to the present invention, the hydrogen ion concentration (PH) of the developer during development is monitored and the development processing time is controlled, thereby obtaining a resist pattern with high developing power and good reproducibility in dimensional control. be able to.
第１図はこの発明による現像処理方法を説明す
るための断面図、第２図はこの発明による現像処
理方法を用いて得られたレジストパターンを示す
断面図、第３図は従来の現像処理方法を説明する
ための断面図、第４図は従来の現像処理方法によ
つて得られるレジストパターンを示す断面図、第
５図は従来の現像時の科学反応を示した図、第６
図は現像処理中における現像液の水酸化物イオン
濃度の経時変化を示す図である。
１はPH測定用センサ、２は現像液、４は半導体
ウエハ、５は回転板である。なお、各図中同一符
号は同一または相当部分を示す。
FIG. 1 is a cross-sectional view for explaining the developing method according to the present invention, FIG. 2 is a cross-sectional view showing a resist pattern obtained using the developing method according to the present invention, and FIG. 3 is a conventional developing method. FIG. 4 is a cross-sectional view showing a resist pattern obtained by a conventional development process, FIG. 5 is a diagram showing the scientific reaction during conventional development, and FIG.
The figure shows the change over time in the hydroxide ion concentration of the developer during the development process. 1 is a pH measurement sensor, 2 is a developer, 4 is a semiconductor wafer, and 5 is a rotating plate. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
アルカリ反応を利用した現像処理方法において上
記ウエハ上に滴下された現像液の水素イオン濃度
を測定し上記水素イオン濃度の変化分を監視する
ことにより現像処理時間を制御することを特徴と
する現像処理方法。1 The resist film formed on the semiconductor wafer is treated with acid,
A development process that uses an alkaline reaction to control the development process time by measuring the hydrogen ion concentration of the developer dropped onto the wafer and monitoring changes in the hydrogen ion concentration. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25012286A JPS63104331A (en) | 1986-10-20 | 1986-10-20 | Developing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25012286A JPS63104331A (en) | 1986-10-20 | 1986-10-20 | Developing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63104331A JPS63104331A (en) | 1988-05-09 |
| JPH0525383B2 true JPH0525383B2 (en) | 1993-04-12 |
Family
ID=17203149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25012286A Granted JPS63104331A (en) | 1986-10-20 | 1986-10-20 | Developing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63104331A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0638399B2 (en) * | 1989-03-15 | 1994-05-18 | 松下電器産業株式会社 | Development device |
| JP2839280B2 (en) * | 1989-03-15 | 1998-12-16 | 松下電器産業株式会社 | Colored photoresist developing equipment |
| JP5953715B2 (en) * | 2010-12-01 | 2016-07-20 | 大日本印刷株式会社 | Method and system for monitoring surface ion concentration of exposure mask, exposure mask cleaning apparatus equipped with the monitor system, and method for manufacturing exposure mask |
-
1986
- 1986-10-20 JP JP25012286A patent/JPS63104331A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63104331A (en) | 1988-05-09 |
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