JPS62183530A - Dry etching apparatus - Google Patents

Abstract

PURPOSE:To improve uniformity of etching by a method wherein respective pressure controllers are provided at a plurality of vacuum exhaust outlets individually. CONSTITUTION:When an etching process is carried out, gas is introduced from a gas inlet 8 into a space between electrodes 3 and 4 and a radio frequency voltage is applied between the electrodes 3 and 4 by a radio frequency source 9 and wafers 5 which are placed on the surface of the electrode 4 which is to be a cathode are etched. By controlling the respective pressure controllers 7 individually during the etching, the pressures of the respective exhaust pipes 6 are individually regulated to be constant. With this constitution, the pressure in an etching chamber 2 is made to be uniform and the uniformity of the vacuum pressure in the etching chamber 2 is not influenced so that the uniformity of etching can be maintained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dry etching apparatus most suitable for batch processing and large diameter wafer processing.

[Conventional technology]

Dry etching equipment uses a vacuum pump to evacuate the etching chamber, applies a high-frequency voltage to electrodes placed opposite each other in the chamber, and excites or ionizes the gas introduced into the chamber to remove the wafer (semiconductor substrate) on the electrodes. It is dry etched.

In conventional devices, the pressure exhausted from the plurality of vacuum exhaust ports is adjusted by uniformly adjusting the pressure from the plurality of vacuum exhaust ports all at once using a single pressure controller.

[Problem that the invention seeks to solve]

Conventional pressure adjustment methods do not cause problems when processing small-diameter wafers, but when batch processing or processing large-diameter wafers, pressure fluctuations at each vacuum exhaust port become large, and the vacuum in the etching chamber becomes This has the disadvantage that it affects the uniformity of pressure and deteriorates the uniformity of etching.

SUMMARY OF THE INVENTION An object of the present invention is to provide a dry etching apparatus that maintains uniform vacuum pressure within an etching chamber during batch processing or processing of large diameter wafers.

[Means for solving problems]

The present invention is a dry etching apparatus having a plurality of vacuum exhaust ports in an etching chamber, characterized in that a pressure controller is individually provided for each of the plurality of vacuum exhaust ports.

〔Example〕

Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

In FIG. 1, the dry etching apparatus according to this embodiment has a pair of electrodes 3 and 4 disposed facing each other in an etching chamber 2, a gas inlet 8 is connected to the upper electrode 3, and a gas inlet 8 is connected to the upper electrode 3. A plurality of vacuum exhaust ports 6,6, .

In the embodiment, during the etching process, gas is introduced between the electrodes 3 and 4 through the gas inlet 8, and a high frequency voltage is applied between the electrodes 3 and 4 by the high frequency power supply 9, thereby causing the electrode 4 to become a cathode. The wafer 5 placed on the surface is etched. According to the present invention, by individually controlling each pressure controller 7 during this etching, each drain port 6 is
The pressure inside the etching chamber 2 is made uniform by adjusting the pressure of the etching chamber 2 individually and keeping it constant. Therefore, the uniformity of etching can be maintained without affecting the uniformity of the vacuum pressure within the etching chamber.

In the embodiments described above, a high frequency power source may be connected to the upper electrode, and the number of semiconductor substrates on the electrode, the number of vacuum exhaust ports, and the number of vacuum pumps may be freely selected.

〔Effect of the invention〕

As explained above, according to the present invention, it is possible to improve the uniformity of the vacuum pressure in the etching chamber even when the etching chamber becomes larger due to batch processing and larger diameter wafers, thereby improving the uniformity of etching. It has the effect of

[Brief explanation of drawings]

FIG. 1 is a schematic sectional view showing an embodiment of the present invention. 1... Vacuum pump, 2... Etching chamber, 3.4.
...Electrode, 5...Wafer, 6...Vacuum exhaust port, 7
...Pressure controller, 8...Gas inlet, 9...
・High frequency power supply.

Claims (1)

[Claims] (1) A dry etching apparatus having a plurality of vacuum exhaust ports in an etching chamber, characterized in that a pressure controller is individually provided for each of the plurality of vacuum exhaust ports.