JPS6218056A - Semiconductor cooling device - Google Patents
Semiconductor cooling deviceInfo
- Publication number
- JPS6218056A JPS6218056A JP15589485A JP15589485A JPS6218056A JP S6218056 A JPS6218056 A JP S6218056A JP 15589485 A JP15589485 A JP 15589485A JP 15589485 A JP15589485 A JP 15589485A JP S6218056 A JPS6218056 A JP S6218056A
- Authority
- JP
- Japan
- Prior art keywords
- rectangular holes
- semiconductor
- thin plates
- plates
- piled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体冷却装置に係り、特に、量産に好適な半
導体冷却装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor cooling device, and particularly to a semiconductor cooling device suitable for mass production.
従来の半導体冷却装置は、持分公報に記載のように、伝
熱壁面(放熱面)に複数層の空洞群を設け、さらに、各
層の空洞群間、および、空洞群と外部とを連通させた冷
却片を用いて半導体を冷却する構造となっていた。しか
し、この構造では冷却片の空洞成形部材の形状が複雑で
、安価に量産するための改良が望まれていた。As described in the equity publication, conventional semiconductor cooling devices have multiple layers of cavity groups on the heat transfer wall surface (heat radiation surface), and also communicate between the cavity groups in each layer and between the cavity groups and the outside. The structure used cooling chips to cool the semiconductor. However, in this structure, the shape of the hollow molded member of the cooling piece is complicated, and improvements have been desired to enable mass production at low cost.
従来例を第2図に示す。半導体1で発生した熱は面2を
介して放熱される。この面2には仕切壁31があり、さ
らに、その上には仕切壁31′が付けられており、夫々
の仕切壁により空洞群32゜32′が構成されている。A conventional example is shown in FIG. Heat generated in the semiconductor 1 is radiated through the surface 2. There is a partition wall 31 on this surface 2, and further partition walls 31' are attached above the partition wall 31, and each partition wall constitutes a group of cavities 32.degree. 32'.
又、仕切壁31.31’には開口部33.33’が設け
られ、開口部33により空洞群32.32’間が、又、
開口部33′により空洞群32′と外部とが連通されて
いる。Further, the partition wall 31.31' is provided with an opening 33.33', and the opening 33 separates the cavities 32.32' from each other.
The cavity group 32' communicates with the outside through the opening 33'.
半導体冷却に際しては、この空洞群、および、開口部の
寸法を放熱量に応じて適切な値(0,1〜1m)にし、
冷媒の沸騰を促・進し、優れた冷却性能を発揮させる。When cooling the semiconductor, the dimensions of this cavity group and the opening are set to appropriate values (0.1 to 1 m) according to the amount of heat dissipation.
Promotes boiling of refrigerant and exhibits excellent cooling performance.
この仕切壁31.31’の空洞部32.32’は機械的
な切削加工や溝付きロールなどによる塑性加工、化学腐
食加工、レーザービーム加工、電子ビーム加工などの方
法が提案されている。Methods such as mechanical cutting, plastic processing using a grooved roll, chemical corrosion processing, laser beam processing, and electron beam processing have been proposed for forming the cavity 32.32' of the partition wall 31.31'.
しかし、仕切壁31.31’の空洞群32゜32′に当
る微細な溝は仕切壁31.31’ を貫通しておらず、
薄板の中間までの深さとなっているため、製作に当って
工程が複雑となり、管理も厳しいものとなり、結局、高
価なものとなっていた。However, the minute groove corresponding to the cavity group 32°32' of the partition wall 31.31' does not penetrate through the partition wall 31.31'.
Because the depth is halfway between the thin plates, the manufacturing process is complicated and management is difficult, resulting in an expensive product.
本発明の目的は冷却性能の優れた半導体冷却装置を安価
に提供することにある。An object of the present invention is to provide a semiconductor cooling device with excellent cooling performance at a low cost.
以下、本発明の一実施例を第1図、第3図ないし第6図
により説明する。第1図の1は半導体又は半導体用冷却
片の一部を示し、半導体で発生した熱は面2を介し、薄
板3,4の表面から放熱される。薄板3,4には幅B、
長さAの長孔があり、複数枚積層されている。第1図で
は薄板3と4は長孔の方向が直交している。図示の上部
Eからこの積層体をみると、薄板3の長孔5と薄板4の
長孔5の重った部分は薄板3,4の貫通した角孔となり
、冷却片1の面2をみる事ができる。又、従来例の第2
図にみられた空洞群に相当する部分はF部(A部と同じ
)に当り、開口部に相当する部分は薄板3の長孔8寸法
と薄板4の長孔0寸法(B部と同じ)の重った部分にあ
ることになる。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1, 3 to 6. Reference numeral 1 in FIG. 1 indicates a semiconductor or a part of a semiconductor cooling piece, and heat generated in the semiconductor is radiated from the surfaces of thin plates 3 and 4 via a surface 2. The thin plates 3 and 4 have a width B,
There is a long hole of length A, and multiple sheets are laminated. In FIG. 1, the directions of the elongated holes in the thin plates 3 and 4 are perpendicular to each other. When this laminate is viewed from the top E in the figure, the overlapped portion of the long hole 5 of the thin plate 3 and the long hole 5 of the thin plate 4 becomes a square hole through which the thin plates 3 and 4 pass, and when looking at the surface 2 of the cooling piece 1, I can do things. Also, the second conventional example
The part corresponding to the cavity group seen in the figure corresponds to part F (same as part A), and the part corresponding to the opening is the long hole 8 dimension of thin plate 3 and the long hole 0 dimension of thin plate 4 (same as part B). ) will be in the heavier part.
本発明は従来例と形状は異なるが、複数層の空洞群があ
ること、各層の空洞群間及び空洞群と外部とが連通して
いることは本発明に於いても全く同じであり、適切な寸
法を選定する事により従来例とほぼ同一の冷却性能を得
る事が確認されている。Although the present invention differs in shape from the conventional example, the fact that there are multiple layers of cavity groups and that the cavity groups in each layer and the cavity groups communicate with the outside is completely the same in the present invention, and is appropriate. It has been confirmed that almost the same cooling performance as the conventional example can be obtained by selecting appropriate dimensions.
構造の具体例を第3図ないし第6図に示す。第3図は熱
伝導性の良好な薄板21に多数の長孔22を設けたもの
であり、第4図も同様に薄板23に長孔24を設けたも
のである。(第4図は第3図を90′回転したものでも
良い)第5図は第3図の薄板21の裏側に第4図の薄板
23を重ねたところを示している。薄板21.23の長
孔22.24が重った所は角孔で貫通される事になる。Specific examples of the structure are shown in FIGS. 3 to 6. 3 shows a thin plate 21 with good thermal conductivity in which a large number of elongated holes 22 are provided, and FIG. 4 similarly shows a thin plate 23 in which elongated holes 24 are provided. (FIG. 4 may be obtained by rotating FIG. 3 by 90') FIG. 5 shows the thin plate 23 of FIG. 4 superimposed on the back side of the thin plate 21 of FIG. 3. The areas where the long holes 22, 24 of the thin plates 21, 23 overlap will be penetrated by square holes.
第6図は半導体、又は、半導体用冷却片の一部1に薄板
21.23を積層した状態を示している。実施に当って
はこれら1,21.23は拡散接合等の方法によって金
属的に接合し、熱伝導を良好にする事は当然の事である
。FIG. 6 shows a state in which thin plates 21 and 23 are laminated on a semiconductor or a part 1 of a semiconductor cooling piece. In actual practice, it is a matter of course that these 1, 21, and 23 are joined metallically by a method such as diffusion bonding to improve heat conduction.
薄板21.23の加工は第3図、第4図に示したように
すべて貫通孔となるため、加工に時間を要する切削加工
が不要で抜型による短時間加工が可能となる。又、化学
腐食加工でも、加工深さの管理が不要となるので、安価
に製作する事が可能となる。又、第1図に示した長孔の
幅Bが板厚に比較して狭くなると抜型による加工が難し
くなるが、このような場合に長孔の幅Bに比して薄い板
を使用し、必要に応じて長孔の向きが同じになるよう複
数枚重ねた後、これと直交するように次の板を重ねてい
く方法もある。第1図ではこの薄板を二枚同一方向に積
重ねた後、次の二枚を前の長孔と90°づらして積重ね
た場合を示している。As shown in FIGS. 3 and 4, the thin plates 21 and 23 are all formed into through-holes, so cutting, which takes time, is not necessary, and processing can be performed in a short time using a cutting die. In addition, even in chemical corrosion processing, there is no need to control the processing depth, so it can be manufactured at a low cost. In addition, if the width B of the long hole shown in Fig. 1 is narrower than the plate thickness, processing with a cutting die becomes difficult, but in such a case, a plate thinner than the width B of the long hole is used, If necessary, there is also a method of stacking multiple plates so that the long holes are in the same direction, and then stacking the next plate so that they are perpendicular to this. FIG. 1 shows a case in which two of these thin plates are stacked in the same direction, and then the next two are stacked at an angle of 90 degrees from the previous elongated hole.
尚、薄板に設けた長孔の方向は一個又は複数個毎に交互
に直交させたが、これは必ずしも直交する必要はなく、
必要な複数の空洞層と開口部を設けることが必要で、直
交は二次的な事である。Note that the directions of the long holes provided in the thin plate were alternately perpendicular to one or more holes, but this does not necessarily have to be perpendicular;
It is necessary to provide the necessary multiple cavity layers and openings, and orthogonality is secondary.
本実施例によれば、空洞層、開口部の形成が容易となり
、安価に量産できる半導体冷却装置を提供することがで
きる。According to this embodiment, the cavity layer and the opening can be easily formed, and a semiconductor cooling device that can be mass-produced at low cost can be provided.
本発明によれば、量産に適し、安価に半導体冷却装置を
提供できる。According to the present invention, a semiconductor cooling device suitable for mass production can be provided at low cost.
Claims (1)
せ、この冷媒の沸騰、凝縮作用を利用して前記半導体を
冷却する半導体冷却装置において、複数の長孔を設けた
熱伝導性の良好な薄板を前記長孔が同一位置に連続して
重ならないように、複数枚積層して結合し、これを前記
半導体又は前記半導体用冷却片の前記放熱面としたこと
を特徴とする半導体冷却装置。 2、特許請求の範囲第1項において、前記長孔の方向が
一個又は複数個毎に交互に直交するように積層して放熱
面を設けたことを特徴とする半導体冷却装置。[Scope of Claims] 1. A semiconductor cooling device that cools the semiconductor by bringing a refrigerant into contact with the heat dissipation surface of a semiconductor or a semiconductor cooling piece and utilizing the boiling and condensing action of the refrigerant, in which a plurality of long holes are provided. A plurality of thin plates having good thermal conductivity are laminated and bonded together so that the elongated holes are not continuously overlapped at the same position, and this is used as the heat dissipation surface of the semiconductor or the semiconductor cooling piece. Features of semiconductor cooling equipment. 2. A semiconductor cooling device according to claim 1, characterized in that a heat dissipation surface is provided by laminating one or more elongated holes such that the directions of the elongated holes are alternately orthogonal to each other.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15589485A JPS6218056A (en) | 1985-07-17 | 1985-07-17 | Semiconductor cooling device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15589485A JPS6218056A (en) | 1985-07-17 | 1985-07-17 | Semiconductor cooling device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6218056A true JPS6218056A (en) | 1987-01-27 |
Family
ID=15615826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15589485A Pending JPS6218056A (en) | 1985-07-17 | 1985-07-17 | Semiconductor cooling device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6218056A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0847125A1 (en) * | 1996-12-03 | 1998-06-10 | Minebea Co., Ltd. | An assembled structure having an enlarged heat transfer area for heat radiation therefrom |
FR2773939A1 (en) * | 1998-01-22 | 1999-07-23 | Mei Hua Hsu | Computer component heat radiation mechanism |
WO2002082536A2 (en) * | 2001-04-09 | 2002-10-17 | Piesold, Alexander, James | Laminated heat transfer device and method of producing thereof |
-
1985
- 1985-07-17 JP JP15589485A patent/JPS6218056A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0847125A1 (en) * | 1996-12-03 | 1998-06-10 | Minebea Co., Ltd. | An assembled structure having an enlarged heat transfer area for heat radiation therefrom |
US6202738B1 (en) | 1996-12-03 | 2001-03-20 | Minebea Company, Ltd. | Assembled structure having an enlarged heat transfer area for heat radiation therefrom |
FR2773939A1 (en) * | 1998-01-22 | 1999-07-23 | Mei Hua Hsu | Computer component heat radiation mechanism |
WO2002082536A2 (en) * | 2001-04-09 | 2002-10-17 | Piesold, Alexander, James | Laminated heat transfer device and method of producing thereof |
WO2002082536A3 (en) * | 2001-04-09 | 2003-08-07 | Convergence Technologies Ltd | Laminated heat transfer device and method of producing thereof |
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