JPS6267843A - Semiconductor cooling device - Google Patents
Semiconductor cooling deviceInfo
- Publication number
- JPS6267843A JPS6267843A JP20651585A JP20651585A JPS6267843A JP S6267843 A JPS6267843 A JP S6267843A JP 20651585 A JP20651585 A JP 20651585A JP 20651585 A JP20651585 A JP 20651585A JP S6267843 A JPS6267843 A JP S6267843A
- Authority
- JP
- Japan
- Prior art keywords
- thin plates
- semiconductor
- holes
- long holes
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体冷却装置に係り、特に、量産に好適な半
導体冷却装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor cooling device, and particularly to a semiconductor cooling device suitable for mass production.
従来の半導体冷却装置は、特願昭57−178407号
明細書に記載のように伝熱壁面(放熱面)に複数層の空
洞群を設け、さらに各層の空洞群間および空洞群と外部
とを開口部により連通させた冷却片を用いて半導体を冷
却する。しかし、この構造では冷却片の空洞成形部材の
形状が複雑なため、安価な量産化が望まれていた。In the conventional semiconductor cooling device, as described in Japanese Patent Application No. 57-178407, a plurality of layers of cavity groups are provided on a heat transfer wall surface (heat radiation surface), and furthermore, a plurality of layers are provided between the cavity groups in each layer and between the cavity groups and the outside. The semiconductor is cooled using a cooling piece communicated through the opening. However, in this structure, since the shape of the hollow molded member of the cooling piece is complicated, inexpensive mass production has been desired.
従来の一実施例を第2図に示す。1は半導体又は半導体
用冷却片(以下冷却片と言う)の一部を示し、半導体で
発生した熱は面2および面2に付けられた仕切壁31.
31’ を介して放熱される。A conventional example is shown in FIG. 1 indicates a semiconductor or a part of a semiconductor cooling piece (hereinafter referred to as a cooling piece), and heat generated in the semiconductor is transferred to a surface 2 and a partition wall 31 attached to the surface 2.
Heat is radiated through 31'.
これらの仕切壁は空洞群32.32’ を構成しており
、仕切壁31,31’には開口部33.33’が設けら
れ、開口部33により空洞群32.33’間が、又、開
口部33′により空洞群32′と外部とが連通されてい
る。These partition walls constitute a cavity group 32, 32', and the partition walls 31, 31' are provided with openings 33, 33', and the openings 33 provide a space between the cavity groups 32, 33', and The cavity group 32' communicates with the outside through the opening 33'.
半導体の冷却に際しては、この空洞群および開口部の寸
法を放熱量に応じて適切な値(0,1〜1m)にするこ
とにより冷媒の沸騰を促進し、優れた冷却性能が得られ
る。When cooling a semiconductor, boiling of the refrigerant is promoted by setting the dimensions of the cavity group and the opening to appropriate values (0.1 to 1 m) depending on the amount of heat radiation, and excellent cooling performance can be obtained.
この仕切壁31.31’の空洞部32.32’は機械的
な切削加工や溝付きロールなどによる塑性加工、化学腐
食加工などの方法が提案されている。For the cavity 32.32' of the partition wall 31.31', methods such as mechanical cutting, plastic working using a grooved roll, and chemical corrosion processing have been proposed.
しかし、仕切壁31.31’の空洞群32゜32′に当
る微細な溝は仕切壁31.31’ を貫通しておらず、
薄板の中間までの深さとなっているため、製作に当って
工程が複雑となり、管理も厳しいものとなり、結局、高
価なものとなっていた。更に仕切壁には微細な開口部3
3.33’の加工が上記外に加わるため、更に費用が嵩
む原因となっていた。However, the minute groove corresponding to the cavity group 32°32' of the partition wall 31.31' does not penetrate through the partition wall 31.31'.
Because the depth is halfway between the thin plates, the manufacturing process is complicated and management is difficult, resulting in an expensive product. Furthermore, there are minute openings 3 in the partition wall.
3.33' processing was added to the above, which caused further increase in costs.
本発明の目的は、冷却性能の優れた半導体冷却装置を提
供することにある。An object of the present invention is to provide a semiconductor cooling device with excellent cooling performance.
以下、本発明の一実施例を第1図、第3図ないし第6図
により説明する。1は冷却片の一部を示し、半導体で発
生した熱は面21面2に接合した薄板3,4および6の
表面から冷媒に放熱される。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1, 3 to 6. Reference numeral 1 indicates a part of the cooling piece, in which heat generated in the semiconductor is radiated to the coolant from the surfaces of the thin plates 3, 4 and 6 joined to the surface 21 and the surface 2.
薄板3,4には幅B、長さAの長孔があり、複数枚積層
されている。第1図では、薄板3と4は長孔の方向が直
交している。更にこの薄板3,4問および最外層には長
穴より小さな多数の小穴7をもつ薄板6を積層している
。従って、第2図に見られた空洞群32.32’に相当
する部分は第1図のA部に当り、従来例、第2図の開口
部33゜33′に相当する部分は第1図の薄板6に設け
た小孔7が相当することになる。尚、薄板3,4の長孔
、薄板6の小孔は互いに連通しており、第1図のE側か
らこの積層体をみろと、薄板6の小孔7から薄板3,4
の長孔5を通し、冷却片1の面2を見ることができる。The thin plates 3 and 4 have elongated holes with a width B and a length A, and a plurality of thin plates are laminated. In FIG. 1, the directions of the elongated holes in the thin plates 3 and 4 are perpendicular to each other. Furthermore, thin plates 6 having a large number of small holes 7 smaller than elongated holes are laminated on these thin plates 3 and 4 and on the outermost layer. Therefore, the part corresponding to the cavity group 32, 32' shown in FIG. 2 corresponds to part A in FIG. This corresponds to the small hole 7 provided in the thin plate 6. The long holes in the thin plates 3 and 4 and the small holes in the thin plate 6 are in communication with each other, and when looking at this laminate from the E side in FIG.
The surface 2 of the cooling piece 1 can be seen through the elongated hole 5.
本発明は従来例と形状は異なるが、複数の空洞群がある
こと。各層の空洞群間および空洞群と外部とが薄板6の
小孔を通じて連通していることは本発明に於いても全く
同じであり、従来例とほぼ同一の冷却性能を得られる。Although the present invention differs in shape from the conventional example, there are a plurality of cavity groups. The communication between the cavity groups in each layer and between the cavity groups and the outside through the small holes in the thin plate 6 is exactly the same in the present invention, and almost the same cooling performance as the conventional example can be obtained.
構造の具体例を第3図ないし、第6図に示す。Specific examples of the structure are shown in FIGS. 3 to 6.
第3図の21は熱伝導性の良好な薄板に多数の長孔22
を設けたものであり、第4図も同様に長孔24を設けた
薄板23を示している。(第4図は第3図を90’回転
したものでも良い)第5図の25は熱伝導性の良好な薄
板に多数の小孔26を設けたものを示している。この小
孔26の位置は薄板21.23を積層したとき、長孔2
2,24が重った位置にあるものとする。21 in Figure 3 is a large number of long holes 22 in a thin plate with good thermal conductivity.
FIG. 4 also shows a thin plate 23 provided with elongated holes 24. (Fig. 4 may be obtained by rotating Fig. 3 by 90') 25 in Fig. 5 shows a thin plate with good thermal conductivity in which a large number of small holes 26 are provided. The position of this small hole 26 is determined by the elongated hole 2 when the thin plates 21 and 23 are stacked.
It is assumed that 2 and 24 are in the overlapped position.
第6図は冷却片の放熱部1に薄板25,21゜23を積
層した状態を示している。実施には、これら1,25,
21.23は拡散接合等の方法によって金属的に接合し
、熱伝導を良好にする。FIG. 6 shows a state in which thin plates 25, 21.degree. 23 are laminated on the heat dissipating portion 1 of the cooling piece. For implementation, these 1, 25,
21 and 23 are metallically bonded by a method such as diffusion bonding to improve heat conduction.
薄板25; 21,23の加工は第3図ないし第5図に
示すようにすべて貫通孔となるため、加工に時間を要す
る薄板の切削加工が不要で、抜型等による短時間加工が
可能となる。又、化学腐食加工等に於いても加工深さの
管理が不要となるので、安価に製作する事ができる。又
、第1図に示した長孔の幅Bが板厚に比較して狭くなる
と、抜型による加工が難しくなるが、このような場合に
は、長穴の幅Bに比して薄い板を使用し、必要に応じ薄
板を積層すれば良く、加工は更に容易となる。Thin plate 25; Since all of the holes 21 and 23 are formed into through-holes as shown in FIGS. 3 to 5, there is no need to cut the thin plate, which takes time, and short-time processing using cutting dies, etc. is possible. . Furthermore, since there is no need to control the machining depth during chemical corrosion machining, etc., it can be manufactured at low cost. Also, if the width B of the long hole shown in Figure 1 becomes narrower than the plate thickness, it becomes difficult to process with a cutting die. If necessary, thin plates can be laminated as needed, making processing even easier.
尚、薄板21.23に設けた長孔の方向が交互に直交す
るように説明したが、これは必ずしも直交する必要はな
く、必要な空洞層と開口部をより安価に製作することが
肝心である。Although it has been explained that the directions of the long holes provided in the thin plates 21 and 23 are alternately orthogonal, this does not necessarily have to be orthogonal, and it is important to manufacture the necessary cavity layers and openings at a lower cost. be.
本実施例によれば、空洞層、開口部の形成が容易となり
、安価に量産できる半導体冷却装置を提供することがで
きる。According to this embodiment, the cavity layer and the opening can be easily formed, and a semiconductor cooling device that can be mass-produced at low cost can be provided.
本発明によれば、半導体冷却用の沸騰冷却装置において
、沸騰を促進するための空洞層、開口部を短時間に製作
する事ができるため、量産に適し、安価に装置を提供で
きる。According to the present invention, in a boiling cooling device for semiconductor cooling, a cavity layer and an opening for promoting boiling can be manufactured in a short time, so that the device is suitable for mass production and can be provided at a low cost.
第1図は本発明の一実施例の斜視図、第2図は従来の斜
視図、第:3図ないし第6図は本発明構成要素の一部を
示す図である。
1・・・半導体又は半導体用冷却片の一部、3,4゜6
.21,23.25・・・薄板、5・・・長穴、7・・
・小穴。FIG. 1 is a perspective view of an embodiment of the present invention, FIG. 2 is a perspective view of a conventional device, and FIGS. 3 to 6 are views showing some of the components of the present invention. 1... Semiconductor or part of cooling piece for semiconductor, 3,4゜6
.. 21, 23.25... Thin plate, 5... Long hole, 7...
・Small hole.
Claims (1)
せ、前記冷媒の沸騰、凝縮作用を利用して前記半導体を
冷却する半導体冷却装置において、複数の長孔をもつ熱
伝導性の良好な薄板を前記長孔が同一位置に連続して重
ならないように複数枚積層し、更に、前記薄板間に前記
長孔より小さな多数の小穴を有する薄板を長孔と小孔の
位置が重なるように積層し、これらを結合し、これを前
記半導体又は前記半導体用冷却片の放熱面としたことを
特徴とする半導体冷却装置。 2、特許請求の範囲第1項の冷却装置において、長孔の
方向が一個又は複数個毎に交互に直交するように積層し
た放熱面を設けたことを特徴とする半導体冷却装置。[Claims] 1. A semiconductor cooling device that cools the semiconductor by bringing a refrigerant into contact with the heat dissipation surface of a semiconductor or a semiconductor cooling piece and utilizing the boiling and condensing action of the refrigerant, which has a plurality of long holes. A plurality of thin plates with good thermal conductivity are laminated so that the elongated holes do not overlap in succession at the same position, and a thin plate having a large number of small holes smaller than the elongated holes between the thin plates is arranged between the elongated holes and the small holes. A semiconductor cooling device characterized in that the above-mentioned semiconductor or the above-mentioned cooling piece for a semiconductor is laminated so that their positions overlap, and these are bonded together to serve as a heat dissipation surface of the semiconductor or the semiconductor cooling piece. 2. A semiconductor cooling device according to claim 1, characterized in that a heat dissipation surface is provided in which the directions of the elongated holes are alternately orthogonal to one or more elongated holes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20651585A JPS6267843A (en) | 1985-09-20 | 1985-09-20 | Semiconductor cooling device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20651585A JPS6267843A (en) | 1985-09-20 | 1985-09-20 | Semiconductor cooling device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6267843A true JPS6267843A (en) | 1987-03-27 |
Family
ID=16524640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20651585A Pending JPS6267843A (en) | 1985-09-20 | 1985-09-20 | Semiconductor cooling device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6267843A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0447835A2 (en) * | 1990-03-21 | 1991-09-25 | International Business Machines Corporation | Heat removal apparatus for liquid cooled semiconductor modules |
WO2009037928A1 (en) * | 2007-09-20 | 2009-03-26 | Sony Corporation | Phase change type heat spreader, channel structure, electronic apparatus and method for manufacturing phase change type heat spreader |
-
1985
- 1985-09-20 JP JP20651585A patent/JPS6267843A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0447835A2 (en) * | 1990-03-21 | 1991-09-25 | International Business Machines Corporation | Heat removal apparatus for liquid cooled semiconductor modules |
WO2009037928A1 (en) * | 2007-09-20 | 2009-03-26 | Sony Corporation | Phase change type heat spreader, channel structure, electronic apparatus and method for manufacturing phase change type heat spreader |
JP2009076650A (en) * | 2007-09-20 | 2009-04-09 | Sony Corp | Phase change type heat spreader, passage structure, electronic device, and method of manufacturing phase transformation type heat spreader |
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