JPH05226704A - Thermoelectric device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a small, light, and inexpensive thermoelectric device high in thermoelectric conversion efficiency and its manufacture. CONSTITUTION:At least a pair of projections 9 are provided at one side of one insulating plate 11, and a patterned electrode film 12 is provided between a pair of projections 9, and a p-type thermoelectric semiconductor film 13, on the electrode film 12 at one top of the projections 9 in a pair, and an n-type thermoelectric semiconductor film 14, on the electrode film 12 on the other top, are provided, and counter electrodes 15, which form a pair, are provided on the p-type thermoelectric semiconductor film 13 and the n-type thermoelectric semiconductor 14, and a pair of lead electrode films 16 are provided for the counter electrode films 15, and a pair of lead electrodes 16 are provided on one side of the other insulating plate 19.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric device used for a cooling / heating device that electrically absorbs or radiates heat by the Peltier effect, or a power generating device that uses the temperature difference due to the Seebeck effect to generate electricity, and its manufacture. Regarding the method.

[0002]

2. Description of the Related Art In a conventional thermoelectric device, as shown in FIG. 12, an N-type thermoelectric semiconductor 3 and a P-type thermoelectric semiconductor 4 are sandwiched between metal plates 1 and 2, and they are alternately electrically and electrically connected in series. When they are thermally arranged in parallel and a potential is applied between the terminals 5 and 6, one metal plate is cooled and the other is heated. Reference numeral 7 is an insulating plate. (For example, Uemura and Nishida, "Thermoelectric Semiconductor and Its Applications," Nikkan Kogyo Shimbun (1988).
p. 39) A method for manufacturing such a thermoelectric device is performed as follows.

Bi-Te compounds are mainly used as thermoelectric semiconductors, and P is produced by a manufacturing method such as melting or sintering.
A mold and an N-type block are prepared, and the thermoelectric semiconductor block is molded into a predetermined bulk shape using a diamond cutter or the like. The shape of the thermoelectric semiconductor is generally prismatic or cylindrical. The size of the prism is about 1.4 mm × 1.4 mm × 1.7 mm even if it is the smallest. A copper plate is used as the metal plate. Then, the P-type thermoelectric semiconductor 4 and the N-type thermoelectric semiconductor 3 are alternately sandwiched by a large number of metal plates, electrically connected in series, and thermally connected in parallel so that the thermoelectric semiconductor and the metal are connected. The plates were directly soldered with a Bi-Sn eutectic alloy or the like to be joined.

The cooling capacity has been expanded by increasing the number of thermoelectric semiconductors installed, and the temperature difference between the cooling part and the heat generating part has been expanded by stacking the devices shown in FIG. 12 in multiple stages.

[0005]

However, the above-mentioned conventional thermoelectric device and its manufacturing method have the following problems. (1) It is difficult to improve the performance of a bulk thermoelectric semiconductor manufactured by a manufacturing method such as melting or sintering.
The efficiency was low. (2) Since the thermoelectric semiconductor is a brittle material, when it is molded into a predetermined bulk shape (for example, about 1.4 mm × 1.4 mm × 1.7 mm), the corners are easily chipped and the yield is very low. (3) The size is very small as described above, and many (about 2
The yield was very low because it was difficult to accurately arrange P-type and N-type thermoelectric semiconductors without variation in size and the P-type and N-type were alternately arranged. (4) Due to the above manufacturing problems, the size of the thermoelectric semiconductor cannot be reduced. Therefore, it is difficult to manufacture a thin thermoelectric device in which the thickness of the thermoelectric semiconductor is 1 mm or less. (5) Since the manufacturing process is not continuous and individual parts are individually manufactured and assembled, it is difficult to reduce the manufacturing cost because it takes time and labor when manufacturing a large amount. (6) A large amount of rare metals Therefore, the material cost is increased, and the weight and volume of the thermoelectric device are increased. (7) When the layers are stacked by the cascade method to increase the temperature difference between the low temperature and the high temperature, the thickness is increased and the weight is increased.

An object of the present invention is to provide a thermoelectric device which solves the above problems, has a high thermoelectric conversion efficiency, is small and lightweight, and is inexpensive, and a method for manufacturing the same.

[0007]

In order to achieve the above object, a thermoelectric device of the present invention is provided with at least one pair of protrusions on one surface of one insulating plate, and electrodes patterned between the pair of protrusions. A film is provided, a P-type thermoconductor film is formed on the electrode film on one of the pair of protrusions, and an N film is formed on the electrode film on the other side.
Type thermoelectric semiconductor film is provided, and the P type thermoelectric semiconductor film and N type thermoelectric semiconductor film are provided.
A pair of counter electrode films is provided on the thermoelectric semiconductor film, and a pair of patterned extraction electrode films is provided in contact with the counter electrode film. The pair of extraction electrode films is provided on one surface of the other insulating plate. The configuration is provided.

[0008]

According to the above structure, a thermoelectric semiconductor film having a high performance and a thermoelectric device having a good thermal insulation can be formed under the thermal non-equilibrium state.

[0009]

(Embodiment 1) A first embodiment of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is an enlarged vertical sectional view of the essential part of this embodiment. In the figure, reference numeral 8 denotes one aluminum substrate having a projection 9 formed on its surface by a method such as machining. The pair of protrusions 9 is a quadrangular pyramid having a height of 1 mm, a top opening of 0.1 mm and a bottom opening of 1 mm, and is formed at a pitch of 2.2 mm. On one surface of one aluminum substrate 8, a polyimide resin film 10 having a thickness of 30 μm is provided as an electrical insulating film to form one insulating plate 11. Further, the patterned electrode film 12 (thickness 70
μm) is provided. The electrode film 12 is patterned so that the tops of the adjacent pair of protrusions 9 are electrically connected in series and are insulated from the electrode films provided on the tops of the other protrusions. A P-type thermoelectric semiconductor film 13 and an N-type thermoelectric semiconductor film 14 are provided on the electrode film 12 on top of the pair of protrusions 9 while masking using a technique such as vacuum deposition or thermal spraying. A pair of counter electrode films 15 are provided on the N-type thermoelectric semiconductor film 14, a pair of lead electrode films 16 is provided in contact with the counter electrode film 15, and the pair of lead electrode films 16 have a thickness of 30 μm. Is provided on one surface of the other insulating plate 19 made of the other aluminum plate 18 via the insulating film 17 of the polyimide resin film.

When the thermoelectric semiconductor films 13 and 14 are formed, a mask pattern is adopted so that the films 13 and 14 are alternately electrically connected in series, and the extraction electrode film 16 is thermally parallel. Is patterned.

FIG. 2 is a plan view of this embodiment, in which a large number of thermoelectric semiconductor films of FIG. 1 are provided, and the extraction electrode film 16 is finally connected to the extraction electrodes 20 and 20 '. 3 is a longitudinal sectional view taken along line XX 'in FIG. 2, and FIG. 4 is an enlarged lateral sectional view of the same.

In the thermoelectric device configured as described above, if a DC voltage is applied between the extraction electrodes 20 and 20 ', the P-type thermoelectric semiconductor film 13 N-type thermoelectric semiconductor film 14, the electrode film 12 and the extraction electrode film 16 are formed. Endotherm or heat generation occurs at the interface of due to the Peltier effect. As a result, one of the upper and lower insulating plates of the thermoelectric device can be cooled and the other can be heated. That is, direct conversion of electricity and heat is possible.

At this time, one of the insulating plates has a low temperature and the other has a high temperature so that a temperature difference occurs between the two plates. However, a protrusion 9 having a height of 1 mm is provided on the insulating plate 11, and the insulating plate 11 and the insulating plate 19 are provided. By setting the distance between them to about 1 mm, the heat loss due to the heat conduction from the high temperature side insulating plate to the low temperature side insulating plate through the air existing therebetween can be almost ignored.

As described above, according to the present embodiment, the efficiency of the thermoelectric device can be remarkably increased as compared with the conventional one by using the thermoelectric semiconductor as a thin film having high performance, which is manufactured under the thermal non-equilibrium state. ..

Further, since the thermoelectric semiconductor can be collectively formed on the electrode film while masking it by using a film forming process such as vacuum deposition, the fine film-shaped thermoelectric semiconductor film can be accurately positioned and the shape of the film can vary. It is possible to form a small number. Further, since the thermoelectric semiconductors are mounted at a high density, the amount of heat absorbed per unit area can be increased, and the thermoelectric device can be used for cooling a device having a large heat generation density.

Furthermore, since the thermoelectric material is a thin film, the amount of rare metals such as Bi and Te used is small, and the material cost and the cost of the thermoelectric device can be reduced.

Although the case where the thermoelectric device of this embodiment is used as a cooling device has been described above, it goes without saying that the thermoelectric device having this configuration can be used as a power generation device that converts heat into electricity by using the Seebeck effect. Yes.

A method of manufacturing the thermoelectric device of this embodiment will be described with reference to FIGS. First, as shown in FIG. 5 (a), one aluminum plate 18 having a thickness of 2 mm is machined to have a height of 1 mm, a top opening of 0.1 mm, and a bottom opening of 1 mm on an aluminum plate 8 having a thickness of 1 mm. Numerous square pyramidal protrusions 9
Are formed with a 2.2 mm pitch.

Next, as shown in (b), the thickness is 70 μm.
Insulating film 1 of polyimide resin film having a thickness of 30 μm
Form 0.

Next, as shown in (c), the copper foil 21 is patterned into a predetermined shape by a lithography method,
The electrode film 12 is formed on the insulating film 10.

Next, as shown in (d), the aluminum plate 8 having the projection 9 prepared in (a) is used as a male press die, and a female press die 22 corresponding to the projection 9 is used to form an electrode. The insulating film 10 of the polyimide resin film provided with the film 12 is pressed. At that time, an epoxy adhesive is applied to the surface of the aluminum plate 8 provided with the protrusions 9. As a result, as shown in (e), it is possible to form the one in which the insulating film 10 of the polyimide resin film provided with the electrode film 12 on the aluminum plate 8 is thermally bonded. The electrode film 12 is patterned so that the tops of two adjacent protrusions are electrically connected in series and are insulated from the electrode films formed on the tops of the other protrusions.

Next, as shown in FIG. 6 (a), the P-type thermoelectric semiconductor film 13 and the N-type thermoelectric semiconductor film 13 are masked on the electrode film 12 on the top of the projection 9 by a technique such as vacuum deposition or thermal spraying. The semiconductor film 14 is formed. The shape of the thermoelectric semiconductor film is approximately 100 μm in length × 100 μm in width × 10 μm in thickness. The thermoelectric semiconductor film is formed so that the P-type thermoelectric semiconductor film 13 and the N-type thermoelectric semiconductor film 14 alternate.

Next, as shown in (b), a directional electrode film 15 (about 1 μm thick) of a copper thin film is formed on the thermoelectric semiconductor film by the same method.

Next, by the same method as shown in FIGS. 5B to 5D, the polyimide resin film in which the patterned extraction electrode film 16 is formed on one surface of the other aluminum plate 18 as well. The insulating film 17 is thermally adhered to produce the upper substrate shown in FIG.

Finally, after a cream solder layer having a predetermined pattern is printed on the extraction electrode film 16 formed on one surface of the aluminum plate 18, the extraction electrode film 16, the P-type thermoelectric semiconductor film 13 and the N-type thermoelectric film are formed. The counter electrode film 15 formed on the semiconductor film 14 is assembled so as to be in contact with the semiconductor film 14, and the temperature is raised to cure the solder layer to ensure electrical connection. In this way, as shown in FIG. 6D, all the P-type thermoelectric semiconductor films 13 and the N-type thermoelectric semiconductor films 14 thus formed are electrically connected in series and thermally connected in parallel. Thermoelectric devices can be made.

In the present embodiment, the polyamide resin solution is applied on the copper foil 21 and cured to form the insulating film 10 of the polyimide resin film, thereby forming the insulating film 10 of the copper foil 21 and the polyimide resin film. However, a commercially available copper-clad laminate having a similar structure may be used.

As described above, according to this embodiment, P is formed on the electrode film while masking by using the vacuum film forming process.
Since the type thermoelectric semiconductor film and the N-type thermoelectric semiconductor film can be formed at one time, it is possible to form the thermoelectric semiconductor having a predetermined film shape with high positional accuracy and less variation in shape.
As a result, the thermoelectric device can be mass-produced at a good yield and at low cost. Further, since it is easy to increase the area of the manufacturing process and can be performed in a continuous process, the mass productivity is excellent and the manufacturing cost can be reduced. Further, since the vacuum film forming process is used, it becomes easy to control the crystal growth surface of the thermoelectric semiconductor film, and the performance of the thermoelectric material can be further improved.

(Embodiment 2) FIG. 7 is an enlarged vertical sectional view of a main portion of a second embodiment of the present invention.

In the figure, a pair of aluminum plates 18
a and 18b have a thickness of 1 mm, and a pair of aluminum plates 18a and 18b are provided on one surface with insulating films 10a and 10b of a polyimide resin film having a thickness of 30 μm to form insulating plates 19a and 19b. There is. The patterned electrode film 2 is formed on one surface of the one insulating plate 19a.
3 is similarly formed on one surface of the other insulating plate 19b by the extraction electrode film 24 (each having a thickness of 70 μm and a width of 1.4 μm).
mm, length 3.6 mm). One insulating plate 1
On the electrode film 23 formed on 9a, at least one pair of projecting copper-made electrode portions 25 are provided with a spacing of 2.2 mm, and the pair of electrode portions 25 are electrically joined. The electrode portion 25 is a square pyramid having a height of 1 mm, a top portion of 0.1 mm square, and a bottom portion of 1 mm square. A P-type thermoelectric semiconductor film 26 and an N-type thermoelectric semiconductor film 27 are formed on the electrode portion 25 while masking using a technique such as vacuum deposition or thermal spraying, and a counter electrode film of a copper thin film is formed on the upper surface thereof. 28 is formed into a film by using the same method. When forming the thermoelectric semiconductor film, the adjacent electrode portions 25 are formed.
In, the P-type thermoelectric semiconductor film 26 and the N-type thermoelectric semiconductor film 2
A mask pattern in which 7 is alternated is adopted. Then, the P-type thermoelectric semiconductor film 26 and the N-type thermoelectric semiconductor film 27
The counter electrode film 28, which is a copper thin film provided above, and the extraction electrode film 24 provided on one surface of the other insulating plate 19b are assembled so as to be electrically joined. In addition, the electrode film 23 and the take-out electrode 24 are all formed of P.
The type thermoelectric semiconductor film 26 and the N-type thermoelectric semiconductor film 27 are patterned so as to be electrically in series and thermally in parallel.

The difference from the first embodiment is that the electrode portion 25 on which the thermoelectric semiconductor film is formed is not a thin film but a square pyramidal block made of copper.

By applying an electric current to the thermoelectric device having the above-described structure, the P-type thermoelectric semiconductor film 26 and the N-type thermoelectric semiconductor film 2 are formed.
Heat absorption or heat generation occurs due to the Peltier effect at the interface between 7, 25 and the counter electrode film 28 of the copper thin film. As a result, one of the upper and lower insulating plates of the thermoelectric device can be cooled and the other can be heated. That is, direct conversion of electricity and heat is possible.

As described above, according to the present embodiment, by using a thermoelectric semiconductor having a high performance manufactured under a thermal non-equilibrium state as the thermoelectric semiconductor, the efficiency of the thermoelectric device is remarkably increased as compared with the conventional one. It becomes possible.

Further, since the electrode portion 25 is made of a quadrangular pyramid made of copper and the flow passage cross-sectional area of the current is increased, the amount of heat loss due to Joule heat generation in the electrode portion can be reduced as compared with the case where the electrode portion is a thin film. it can. Therefore, the amount of heat absorbed by the thermoelectric device can be increased, and the efficiency of the thermoelectric device can be further increased.

Further, similar to the first embodiment, the cooling capacity per unit area is increased by mounting the thermoelectric semiconductors at a high density and the cost is reduced because the amount of the thermoelectric material used is small. be able to.

A method of manufacturing the thermoelectric device of this embodiment will be described with reference to FIGS. 7 and 8. First, as shown in FIG. 8A, a polyamide resin solution is applied onto a copper foil 21 having a thickness of 70 μm and cured to form an insulating film 10a of a polyimide resin film having a thickness of 30 μm.

Next, as shown in (b), the copper foil 21 is patterned into a predetermined shape by a lithography method,
The electrode film 23 is formed on the insulating film 10a of the polyimide resin film.
(Thickness 70 μm, width 1.4 mm, length 3.6 mm) are formed.

Next, as shown in (c), after the epoxy adhesive is applied to the surface of the aluminum plate 18a, the insulating film 10a of the polyimide film provided with the electrode film 23 is set and cured, The two are thermally joined to manufacture one insulating plate 19a.

Next, as shown in (d), at least a pair of projecting copper-made electrode portions 25 having a spacing of 2.2 mm are provided on the electrode film 23, and both are electrically joined. .. Electrode part 2
Reference numeral 5 is a square pyramidal copper block having a height of 1 mm, a top portion of 0.1 mm square, and a bottom portion of 1 mm square, and is manufactured by mechanical processing. Then, the produced copper block of the quadrangular pyramid is placed on a female die (not shown) in which a concave portion of the quadrangular pyramid is formed at a predetermined position, and then is placed on the electrode film 23 at once. It should be noted that cream solder is applied on the electrode film 23 in advance. Then, the temperature is raised, and the electrode film 23 and the quadrangular pyramidal copper electrode portion 25 are formed.
To be electrically connected.

Next, as shown in (e), the P-type thermoelectric semiconductor film 26 and the N-type thermoelectric semiconductor are masked on the top of the quadrangular pyramidal electrode portion 25 using a technique such as vacuum deposition or thermal spraying. The film 27 is formed. The shape of the thermoelectric semiconductor films 26 and 27 is about 100 μm in length × 100 μm in width × thickness 10
μm. The thermoelectric semiconductor film is formed such that the P-type thermoelectric semiconductor film 26 and the N-type thermoelectric semiconductor film 27 are alternately arranged.

Further, as shown in FIG. 9A, a counter electrode film 28 of copper thin film (about 1 μm thick) is formed on the thermoelectric semiconductor film by the same method as described above.

Next, by the same method as shown in FIGS. 8A to 8C, the polyimide resin film having the patterned extraction electrode film 24 formed on the surface of the other aluminum plate 18b as well. The insulating film 10b is thermally bonded to produce the upper substrate shown in FIG. 9 (b).

Finally, after a cream solder layer having a predetermined pattern is printed on the lead-out electrode film 24 formed on the upper substrate, the lead-out electrode film 24 and the counter electrode film 28 of a copper thin film are combined so that they are in contact with each other, and the ascending electrode layer 28 is raised. Warm to cure the solder layer and ensure electrical contact. In this way, FIG.
As shown in (c), it is possible to manufacture a thermoelectric device in which all the formed P-type thermoelectric semiconductor films 26 and N-type thermoelectric semiconductor films 27 are electrically in series and thermally in parallel. it can.

As described above, according to this embodiment, the protrusions made of copper can be arranged on the insulating plate without machining the substrate, and the protrusions can be easily formed on the insulating plate only by heating. Therefore, it is possible to further improve mass productivity and reduce manufacturing cost.

(Embodiment 3) FIG. 10 is a vertical sectional view of a third embodiment of the present invention.

In this embodiment, the thermoelectric device having the structure sandwiched between the two upper and lower insulating plates shown in the first and second embodiments is laminated in three stages while ensuring thermal contact. is there. The upper insulating plate 29 of the first-stage thermoelectric device is used as the lower insulating plate of the second-stage thermoelectric device, and the upper insulating plate 30 of the second-stage thermoelectric device is the third-stage thermoelectric device. It is used as an insulating plate under the thermoelectric device. The number of thermoelectric semiconductor films formed on one insulating plate increases in the upper stage,
That is, the number of thermoelectric elements is reduced. The material of the thermoelectric semiconductor film used in the thermoelectric device at each stage is changed so that the figure of merit of the material becomes high at the temperature at each stage. That is, a Bi-Te based material was used in the first and second steps, and a Bi-Sb based material was used in the third step.

When an electric current is passed through the thermoelectric device constructed as described above, the temperature difference between the uppermost insulating plate 31 and the lowermost insulating plate 32 of the thermoelectric device is from the first stage to the third stage. It is the sum of the temperature differences generated in each thermoelectric device.

Therefore, in this embodiment, in addition to the effects described in the first and second embodiments, by stacking a plurality of thin thermoelectric devices, it is possible to increase the temperature difference generated in the thermoelectric device as a whole. Is obtained. Further, since the thermoelectric semiconductor used in each stage is made of a material having high performance in that temperature range, a large temperature difference can be efficiently obtained.

Furthermore, since the thermoelectric semiconductor is a thin film, the thickness of the entire thermoelectric device can be reduced, and a compact thermoelectric device can be realized.

(Embodiment 4) FIG. 11 is a vertical sectional view of a fourth embodiment of the present invention.

In this embodiment, a radiator 34 having a cooling passage 33 for water cooling is installed as a heat exchanging means (radiating means) under the thermoelectric device shown in FIG. That is,
A radiator 34 is adhered to the other surface of the lowermost insulating plate 32 of the thermoelectric device of FIG. 10 with a heat conductive adhesive so as to be in thermal contact.

With such a structure, it is possible to more efficiently dissipate heat in the heat generating portion, and it is possible to further enhance the cooling effect.

The shape of the protrusion 9 in the first embodiment and the shape of the electrode portion 25 in the second embodiment are quadrangular pyramids, but any tapered cross-section may have the same shape. The effect is obtained.

Although the insulating plate has been described by forming the insulating film on the surface of the aluminum plate, an insulating plate made of aluminum or the like may be used.

[0055]

As described above, according to the present invention, since the thermoelectric semiconductor film having high performance prepared under the thermal non-equilibrium state is used, the thermoelectric conversion efficiency is higher than before, and the size, weight and cost are low. A thermoelectric device is obtained.

[Brief description of drawings]

FIG. 1 is an enlarged vertical sectional view of an essential part of a thermoelectric device according to a first embodiment of the present invention.

FIG. 2 is a plan view of the same embodiment.

FIG. 3 is a vertical sectional view of the same embodiment.

FIG. 4 is an enlarged transverse cross-sectional view of the main part of the same embodiment.

5A to 5E are manufacturing process diagrams of the first half of the embodiment.

6A to 6D are manufacturing process diagrams of the latter half of the embodiment.

FIG. 7 is an enlarged vertical sectional view of an essential part in the second embodiment of the present invention.

8A to 8E are manufacturing process diagrams of the first half of the embodiment.

FIG. 9A to FIG. 9C are manufacturing process diagrams of the latter half of the embodiment.

FIG. 10 is a vertical sectional view of a third embodiment.

FIG. 11 is a vertical sectional view of a fourth embodiment.

FIG. 12 is a perspective view of a conventional thermoelectric device.

[Explanation of symbols]

9 protrusions 11, 19, 19a, 19b, 29, 30, 31, 32
Insulating plate 12,23 Electrode film 13,26 P-type thermoelectric semiconductor film 14,27 N-type thermoelectric semiconductor film 15,28 Counter electrode film 16,24 Extraction electrode film 25 Electrode part 34 Radiator (heat exchange means)

Front page continuation (72) Inventor Kuro Gyoten 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (6)

[Claims] 1. At least one pair of protrusions is provided on one surface of one insulating plate, and a patterned electrode film is provided between the pair of protrusions, and P is formed on the electrode film on the top of one of the pair of protrusions. -Type thermoelectric semiconductor film, an N-type thermoelectric semiconductor film is provided on the other top electrode film, and a pair of counter electrode films is provided on the P-type thermoelectric semiconductor film and the N-type thermoelectric semiconductor film. A thermoelectric device in which a pair of extraction electrode films patterned in contact with each other is provided, and the pair of extraction electrode films is provided on one surface of the other insulating plate. 2. A patterned electrode film is provided on one insulating plate, at least one pair of electrode portions is provided on the electrode film, and a P-type thermoelectric semiconductor film is provided on one top of the pair of electrode portions. An N-type thermoelectric semiconductor film is provided on the other top portion, a pair of counter electrode films is provided on the P-type thermoelectric semiconductor film and the N-type thermoelectric semiconductor film, and a pair of patterned lead-outs are formed in contact with the counter electrode film. A thermoelectric device in which an electrode film is provided, and the pair of extraction electrode films is provided on one surface of the other insulating plate. 3. A thermoelectric device comprising two or more layers of the thermoelectric device according to claim 1 or 2. 4. A thermoelectric device provided with a heat exchange means in thermal contact with the other surface of one insulating plate of the thermoelectric device according to claim 1, 2. 5. A step of forming at least one pair of protrusions on one surface of one insulating plate, a step of forming a patterned electrode film on the one surface, and an electrode film on one top of the pair of protrusions. A step of forming a P-type thermoelectric semiconductor film thereon, an N-type thermoelectric semiconductor film on the other top electrode film, and a step of forming a counter electrode film on the P-type thermoelectric semiconductor film and the N-type thermoelectric semiconductor film A method of manufacturing a thermoelectric device, comprising: a step of forming a patterned extraction electrode film on one surface of the other insulating plate; and a step of electrically bonding one surface of the one insulating plate and one surface of the other insulating plate. .. 6. A step of forming a patterned electrode film on one surface of one insulating plate, a step of forming at least one pair of electrode portions on the electrode film, and one top portion of the pair of electrode portions. Forming a P-type thermoelectric semiconductor film on the other top, an N-type thermoelectric semiconductor film on the other top, forming a counter electrode film on the P-type thermoelectric semiconductor film and the N-type thermoelectric semiconductor film, and forming the other insulating plate. A method of manufacturing a thermoelectric device, comprising: a step of forming a patterned extraction electrode film on one surface; and a step of electrically bonding one surface of the one insulating plate and one surface of the other insulating plate.