JPS62180065A - Cleaning method for pvd film forming jig - Google Patents
Cleaning method for pvd film forming jigInfo
- Publication number
- JPS62180065A JPS62180065A JP2246286A JP2246286A JPS62180065A JP S62180065 A JPS62180065 A JP S62180065A JP 2246286 A JP2246286 A JP 2246286A JP 2246286 A JP2246286 A JP 2246286A JP S62180065 A JPS62180065 A JP S62180065A
- Authority
- JP
- Japan
- Prior art keywords
- pvd
- pvd film
- jig
- film forming
- forming jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 7
- 238000004140 cleaning Methods 0.000 title claims description 10
- 238000001035 drying Methods 0.000 claims abstract description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 3
- 239000010935 stainless steel Substances 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims abstract 3
- 238000005406 washing Methods 0.000 claims abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 5
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 5
- BOSAWIQFTJIYIS-UHFFFAOYSA-N 1,1,1-trichloro-2,2,2-trifluoroethane Chemical compound FC(F)(F)C(Cl)(Cl)Cl BOSAWIQFTJIYIS-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005240 physical vapour deposition Methods 0.000 description 78
- 239000012535 impurity Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 101100294463 Human adenovirus E serotype 4 L2 gene Proteins 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000053 physical method Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 238000005422 blasting Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000013051 drainage agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はPVD被膜形成治具の清浄方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cleaning a PVD film forming jig.
ステンレススチール等の金属でできたPVD被膜形成治
具の使用初めの際は、素材に吸着しているガス状不純物
、油類、指紋等を除去するため有機洗浄を行なう。しか
し有機洗浄で完全に除去できない油類、指紋等について
は、PVD被膜形成治具表面にTiN等の膜を形成させ
ることにより油類、指紋等を覆い、製品をPVD処理す
る時に悪い影響を及ぼさない様にしている。またPVD
被膜被膜油底治具度か使用すると、PVD被膜形成治具
表面にもPVD被膜が形成され、ガス状不純物等がPV
D被膜中に吸着されて行く。このガス状不純物等が吸着
したPVDwl膜形成治具を使用し製品をPVD処理す
ると、PVD装置の真空容器内を真空に排気するためガ
ス状不純物等がPVD被膜より離脱拡散し製品に悪い影
響を与える。このためPVD被膜形成治具表面に形成さ
れたPVD被膜をガラスピーズプラスト等の物理的な方
法により剥離し吸着しているガス状不純物等を減少させ
ている。When a PVD film forming jig made of metal such as stainless steel is first used, organic cleaning is performed to remove gaseous impurities, oils, fingerprints, etc. adsorbed on the material. However, for oils, fingerprints, etc. that cannot be completely removed by organic cleaning, a film of TiN, etc. is formed on the surface of the PVD film forming jig to cover the oils, fingerprints, etc. and prevent any negative effects when the product is subjected to PVD treatment. I'm trying not to. Also PVD
When using an oil-bottomed jig, a PVD film is also formed on the surface of the PVD film forming jig, and gaseous impurities are removed from the PVD film.
D is adsorbed into the coating. When a product is subjected to PVD treatment using a PVDwl film forming jig that has adsorbed gaseous impurities, etc., the gaseous impurities are released from the PVD film and diffused, which adversely affects the product. give. For this reason, the PVD film formed on the surface of the PVD film forming jig is peeled off by a physical method such as glass beads blasting to reduce adsorbed gaseous impurities.
新しいPVD被膜形成治具を使用するたびに必ず有機洗
浄とPVD被膜形成治具表面にTiN等のPVD″41
膜をPVD処理により形成させているため、特にPVD
処理するための作業時間及びPVD装置が量産に使用出
来な℃・とい5ムダがあった。また第4図のPVD被膜
形成治具の部分断面図て示す様に、PVD被膜形成治具
6の表面に形成したTiN等のPVD被膜1は物理的な
方法により完全に除去することが難しく、完全に除去し
ようとするとPVII膜形成治具3の変形や破壊が起き
使用が不能となる。またPVD被膜1の除去を物理的な
方法で行なうので、PVD被膜形成治具3の表面粗さが
増し、ガス不純物等の吸着の原因にもなっている。この
ためPVD被膜1を除去するための作業性が非常に悪い
。この結果、PVD被膜形成治具30表面が粗れ、更に
、TiN等のPVD被膜1が一部残る状態で製品のPV
D処理に使用するため、製品にPVD被膜を形成させる
際、不活性ガスによるスパッタ作用によりPVD被膜形
成治具3の表面及びPVD被膜1に吸着しているガス状
不純物2が離脱拡散され、製品に形成するPVD被膜の
性状(色調、組成、純度)に大きな悪影響を与えると共
に、規定の高真空度に到達するまでの排気時間が長くか
かる。また第5図のI’VD装置の概略を示す説明図に
示す様に、製品にPVD*膜1を均一な厚みに形成させ
るためPVD被膜形成治具3をPVD装置の基板5に取
付は回転させて使用する時が多(、この場合PVD*膜
形成治具3の表面のPVD被膜1が不活性ガスによるス
パッタ作用及び回転作用により剥離脱落して蒸発源4に
混入し、製品に形成するPVD被膜の性状(色調、組成
、純度)に悪影響を与えている。Every time you use a new PVD film forming jig, be sure to perform organic cleaning and apply PVD such as TiN to the surface of the PVD film forming jig.
Since the film is formed by PVD treatment, especially PVD
There was a waste of working time for processing and 5 degrees Celsius that the PVD equipment could not be used for mass production. Furthermore, as shown in the partial cross-sectional view of the PVD film forming jig in FIG. 4, the PVD film 1 formed on the surface of the PVD film forming jig 6, such as TiN, is difficult to completely remove by physical methods. If an attempt is made to completely remove it, the PVII film forming jig 3 will be deformed or destroyed, making it unusable. Furthermore, since the PVD film 1 is removed by a physical method, the surface roughness of the PVD film forming jig 3 increases, which also causes adsorption of gas impurities and the like. Therefore, the workability for removing the PVD film 1 is very poor. As a result, the surface of the PVD film forming jig 30 becomes rough, and furthermore, a part of the PVD film 1 such as TiN remains and the PVD film forming jig 30 surface of the product becomes rough.
When forming a PVD film on a product for use in D treatment, the gaseous impurities 2 adsorbed on the surface of the PVD film forming jig 3 and the PVD film 1 are separated and diffused by the sputtering action of an inert gas, and the product is This has a large negative effect on the properties (color tone, composition, purity) of the PVD film formed on the surface of the PVD film, and it takes a long time to evacuation to reach the specified high degree of vacuum. In addition, as shown in the explanatory diagram showing the outline of the I'VD apparatus in Fig. 5, in order to form the PVD* film 1 on the product with a uniform thickness, the PVD film forming jig 3 is attached to the substrate 5 of the PVD apparatus and is rotated. (In this case, the PVD film 1 on the surface of the PVD* film forming jig 3 peels off due to the sputtering action and rotation action of the inert gas, mixes into the evaporation source 4, and is formed on the product.) It has a negative effect on the properties (color tone, composition, purity) of the PVD coating.
本発明は上記の問題点を解決し、各種のムダを無くし、
PVD被膜形成治具表面に形成されたTiN等のPVD
被腺を簡単に短時間で除去し、更に、製品に形成するP
VD被膜の性状に悪影響を与えないようにすることを目
的とするものである。The present invention solves the above problems, eliminates various wastes,
PVD such as TiN formed on the surface of the PVD film forming jig
The glands can be easily removed in a short time, and furthermore, P can be formed into the product.
The purpose of this is to avoid adversely affecting the properties of the VD film.
100℃以上の温度に加熱されたPVDW膜剥離液に前
記PVD被膜形成治具を浸漬し、その後該PVD被膜形
成治具を水洗し、蒸気乾燥して清浄を行なう。The PVD film forming jig is immersed in a PVDW film stripping solution heated to a temperature of 100° C. or more, and then the PVD film forming jig is washed with water and then steam-dried to perform cleaning.
以下本発明の実施例を図面に基づいて詳述する。 Embodiments of the present invention will be described in detail below based on the drawings.
第1図はPVD被膜形成治具の清浄方法にいたる流れを
示す工程図で、イオンブレーティング法によりTiN及
びAuの被膜が形成されたPVD被膜形成治具を、
■市販されているシア系のAu剥離液に浸漬しAuのみ
を剥離する。Figure 1 is a process diagram showing the flow of the cleaning method for a PVD film forming jig. It is immersed in an Au stripping solution to strip off only the Au.
■十分に水洗をする。■Rinse thoroughly with water.
■PVD被膜形成治具を100℃以上の温度に加熱され
た濃度が50%の硝酸水溶液からなるPVII膜剥離液
(TiN被膜剥離液)に約5分間浸漬し、TiN被膜の
除去及び清浄を行なう。■Immerse the PVD film forming jig in a PVII film stripping solution (TiN film stripping solution) made of a 50% nitric acid aqueous solution heated to a temperature of 100°C or higher for about 5 minutes to remove and clean the TiN film. .
■十分に水洗をする。その後フロン系の水切剤に浸漬し
、PVD被膜形成治具の水を除去する。■Rinse thoroughly with water. Thereafter, the PVD film forming jig is immersed in a fluorocarbon-based drainage agent to remove water.
■トリクロロトリフルオロエタンを使用し蒸気乾燥を行
なう。■ Perform steam drying using trichlorotrifluoroethane.
■PVD被膜形底治具に品物を取付ける。■Attach the item to the PVD film type bottom jig.
■品物を取付けたPVD被膜形成治具をイオンブレーテ
ィング装置の基板に取付ける。■Attach the PVD film forming jig with the item attached to the board of the ion blating device.
■イオンブレーティング装置の真空容器内を排気し、高
真空を作る。■Evacuate the vacuum chamber of the ion brating device and create a high vacuum.
■イオンブレーティングにより品物の表面にTiN及び
Auの被膜を形成する。■ Forming a TiN and Au film on the surface of the item by ion blasting.
0品物を取付けたPVD被膜形成治具をイオンブレーテ
ィング装置の基板から外す。Remove the PVD film forming jig with the zero item attached from the board of the ion blating device.
■PVD被膜形底治具から品物を外す。■Remove the item from the PVD film type bottom jig.
以上の様な流れでPVD被膜形成治具表面に形成された
PVD*膜を除去し、吸着しているガス状不純物等を完
全に除去することができる。With the flow described above, the PVD* film formed on the surface of the PVD film forming jig can be removed, and the adsorbed gaseous impurities etc. can be completely removed.
りVD被膜剥離液及び浸漬条件については、鋭意研究し
た結果から得られた条件で、(詳細については削除する
。)第2図はPVD被膜剥離液に使用した硝酸水溶液の
温度と浸漬時間の関係を示す様に、約100℃の温度で
PVD被膜の剥離時間が最小に近くなり、それ以上温度
を上げてもあまり変化はない。また硝酸水溶液の濃度に
ついては、15%〜60%の範囲が最適で、15%未満
及び60%を越えるとPVD被膜の剥離時間が長くなる
上、吸着したガス状不純物等を完全に除去することが難
しい。またPVD被膜剥離液に苛性アルカリを主成分と
し、過酸化水素水を含有した水溶液を1008C以上に
加熱し使用しても、本実施例と同様の良好な結果が得ら
nる。Regarding the VD coating stripping solution and dipping conditions, the conditions were obtained from the results of extensive research (details will be deleted). Figure 2 shows the relationship between the temperature of the nitric acid aqueous solution used as the PVD coating stripping solution and the dipping time. As shown, the peeling time of the PVD coating is close to the minimum at a temperature of about 100° C., and there is no significant change even if the temperature is increased further. Regarding the concentration of the nitric acid aqueous solution, a range of 15% to 60% is optimal; if it is less than 15% or more than 60%, it will take a long time to remove the PVD film, and it may be difficult to completely remove the adsorbed gaseous impurities. is difficult. Further, even if an aqueous solution containing a caustic alkali as a main component and a hydrogen peroxide solution is used as a PVD film stripping solution and heated to 1008 C or higher, good results similar to those of this example can be obtained.
またPVD被膜剥離液によるPVD被膜形成治具清浄後
の乾燥は、蒸気乾燥を行なうことが絶対必要条件で、熱
風乾燥等の乾燥方法で行なうとPVD被膜形成治具表面
にシミ等が残ったり、’ PVD被膜形成治具が形
成されている部品の連結部に水分等が残ったりして、製
品をPVD処理する時、PVD被膜の性状(色調、組成
、純度)に悪影響を与える。Furthermore, after cleaning the PVD film forming jig with a PVD film stripping solution, it is absolutely necessary to perform steam drying.If drying methods such as hot air drying are used, stains etc. may remain on the surface of the PVD film forming jig. ' Moisture may remain in the joints of parts on which the PVD film forming jig is formed, which will adversely affect the properties (color tone, composition, purity) of the PVD film when the product is subjected to PVD treatment.
また新しいPVD*膜形成治具を使用する場合は、第1
図に示す■のPVD被膜剥離液に浸漬する工程から順次
行ないPVD破膜形成治具表面を清浄する。この結果、
PVD被膜形成治具表面を傷めずに吸着しているガス状
不純物、油類、指紋等を完全に除去することができる。Also, when using a new PVD* film forming jig,
The surface of the PVD film rupture forming jig is cleaned by sequentially performing the step of immersing it in the PVD film stripping solution shown in the figure (2). As a result,
It is possible to completely remove adsorbed gaseous impurities, oils, fingerprints, etc. without damaging the surface of the PVD film forming jig.
尚、第3図は本発明により清浄したPVD被膜形成治具
の断面図で、PVDW膜形底治具6の表面に吸着してい
たガス状不純物等が完全に除去されて℃・る。Incidentally, FIG. 3 is a cross-sectional view of the PVD film forming jig that has been cleaned according to the present invention, and the gaseous impurities adsorbed on the surface of the PVD film-shaped bottom jig 6 have been completely removed.
以上の説明で明らかなように、本発明のPVD被膜形成
治具を100°C以上に加熱されたPVD被膜剥離液に
浸漬し、その後水洗、蒸気乾燥することにより、PVD
被膜形成治具表面に形成されたTiN等のPVD被膜を
簡単に短時間で除去し、その上、吸着しているガス状不
純物、油類、指紋等をシミを残さず完全に除去すること
ができるので、製品のPVD処理に使用する場合、製品
に形成するPVII膜の性状(色調、組成、純度)に悪
影響を与えることがまったく無くなった。また新しいP
VD被膜形灰治具を使用する際も、従来のようなTiN
等のpvn破膜を形成する必要がないので、PVD処理
するだめの作業時間等の各種のムダを取り除くことがで
きるようになった。As is clear from the above explanation, the PVD film forming jig of the present invention is immersed in a PVD film stripping solution heated to 100°C or higher, and then washed with water and steam-dried to form a PVD film.
It can easily remove PVD films such as TiN formed on the surface of the film forming jig in a short time, and also completely remove adsorbed gaseous impurities, oils, fingerprints, etc. without leaving any stains. Therefore, when used for PVD treatment of products, there is no adverse effect on the properties (color tone, composition, purity) of the PVII film formed on the product. Another new P
Even when using a VD coated ash jig, the traditional TiN
Since there is no need to form a PVN membrane rupture, it is now possible to eliminate various wastes such as the work time required for PVD treatment.
第1図から第3図は本発明の実施例で、第1図はPVD
被膜形成治具の清浄方法にいたる流れを示す工程図、第
2図は硝酸水溶液の温度と浸漬時間の関係を示すグラフ
、第3図は清浄したPVD被膜形成治具の部分断面図、
第4図は従来例で、PVD被膜形底治具の部分断面図、
第5図はPVD装置の概略を示す説明図である。
1・・・・・・PVD被膜、
2・・・・・・ガス状不純物、
3.6・・・・・・PVDi膜形成治具、4・・・・・
・蒸発源、
5・・・・・・基板。
第1図
■ ■ ■ ■ ■
第2図
(J項一間・→
(、+J赦末春創造わ1 to 3 show embodiments of the present invention, and FIG. 1 shows a PVD
FIG. 2 is a graph showing the relationship between the temperature of the nitric acid aqueous solution and the immersion time; FIG. 3 is a partial cross-sectional view of the cleaned PVD film forming jig;
FIG. 4 shows a conventional example, a partial cross-sectional view of a PVD film type bottom jig,
FIG. 5 is an explanatory diagram showing an outline of the PVD apparatus. 1... PVD film, 2... Gaseous impurities, 3.6... PVDi film forming jig, 4...
- Evaporation source, 5...Substrate. Figure 1 ■ ■ ■ ■ ■ Figure 2 (J section 1 ken・→ (, +J end spring creation
Claims (1)
具の使用初めと前記PVD被膜形成治具の表面に形成さ
れたPVD被膜の清浄方法に於て、100℃以上の温度
に加熱されたPVD被膜剥離液に前記PVD被膜形成治
具を浸漬し、その後該PVD被膜形成治具を水洗し、蒸
気乾燥したことを特徴とするPVD被膜形成治具の清浄
方法。During the initial use of a PVD film forming jig made of metal such as stainless steel and during the cleaning method of the PVD film formed on the surface of the PVD film forming jig, peeling of the PVD film heated to a temperature of 100°C or higher is necessary. A method for cleaning a PVD film forming jig, comprising immersing the PVD film forming jig in a liquid, washing the PVD film forming jig with water, and drying it with steam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2246286A JPS62180065A (en) | 1986-02-04 | 1986-02-04 | Cleaning method for pvd film forming jig |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2246286A JPS62180065A (en) | 1986-02-04 | 1986-02-04 | Cleaning method for pvd film forming jig |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62180065A true JPS62180065A (en) | 1987-08-07 |
Family
ID=12083372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2246286A Pending JPS62180065A (en) | 1986-02-04 | 1986-02-04 | Cleaning method for pvd film forming jig |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62180065A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021065804A (en) * | 2019-10-17 | 2021-04-30 | 株式会社平和カーボン | Method for removing titanium nitride-containing lump |
-
1986
- 1986-02-04 JP JP2246286A patent/JPS62180065A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021065804A (en) * | 2019-10-17 | 2021-04-30 | 株式会社平和カーボン | Method for removing titanium nitride-containing lump |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2568371B2 (en) | Novel lid and door for vacuum chamber and pretreatment | |
US5861064A (en) | Process for enhanced photoresist removal in conjunction with various methods and chemistries | |
US5660640A (en) | Method of removing sputter deposition from components of vacuum deposition equipment | |
JP4036751B2 (en) | Cleaning and etching method and apparatus | |
WO2003061859A1 (en) | Cleaning process residues on a process chamber component | |
JP2903607B2 (en) | How to remove nitride | |
JP4398091B2 (en) | Cleaning solution and cleaning method for parts of semiconductor processing equipment | |
JPS62180065A (en) | Cleaning method for pvd film forming jig | |
CN114496710A (en) | Method for cleaning yttrium oxide coating of ceramic window of semiconductor equipment | |
JPH0536661A (en) | Cleaning method | |
KR0140652B1 (en) | Cleaning method of semiconducotr substrate | |
JP2002118088A (en) | Method of chemically treating semiconductor wafer | |
JPS5852324B2 (en) | Manufacturing method of semiconductor device | |
WO2002029857A1 (en) | Method of cleaning electronic device | |
JPS58127328A (en) | Etching method for insulating protection film of semiconductor substrate | |
JP3200312B2 (en) | Dry etching method | |
JPH0590239A (en) | Cleaning method and cleaning device | |
KR0170459B1 (en) | Wafer cleaning method and its apparatus | |
JP3082519B2 (en) | How to remove resist residue | |
JPS634617A (en) | Cleaning method | |
JP2541560B2 (en) | Cleaning method for fluororesin products | |
JPH10199847A (en) | Method of cleaning wafer | |
JPH0472727A (en) | Gas cleaning process | |
KR950006976B1 (en) | Surface cleaning method of contact hole | |
KR0171983B1 (en) | Wafer cleaning method |