JPS62172731A - エツチング方法 - Google Patents

Info

Publication number

JPS62172731A

JPS62172731A JP1415286A JP1415286A JPS62172731A JP S62172731 A JPS62172731 A JP S62172731A JP 1415286 A JP1415286 A JP 1415286A JP 1415286 A JP1415286 A JP 1415286A JP S62172731 A JPS62172731 A JP S62172731A

Authority

JP

Japan

Prior art keywords

etching

conductive layer

type conductive

power source

wafer

Prior art date

1986-01-24

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

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• 238000005530 etching Methods 0.000 title claims abstract description 49
• 238000000034 method Methods 0.000 title claims abstract description 19
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
• 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
• 239000010703 silicon Substances 0.000 claims abstract description 27
• OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract description 8
• BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 8
• 239000010453 quartz Substances 0.000 abstract description 5
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
• 230000000694 effects Effects 0.000 abstract description 4
• 229910052697 platinum Inorganic materials 0.000 abstract description 4
• 238000007654 immersion Methods 0.000 abstract 1
• KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 13
• 230000035945 sensitivity Effects 0.000 description 6
• 230000007423 decrease Effects 0.000 description 4
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
• 229910052796 boron Inorganic materials 0.000 description 3
• 239000010408 film Substances 0.000 description 3
• 239000012535 impurity Substances 0.000 description 2
• 239000007788 liquid Substances 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• 229910052751 metal Inorganic materials 0.000 description 2
• 239000002184 metal Substances 0.000 description 2
• 230000003647 oxidation Effects 0.000 description 2
• 238000007254 oxidation reaction Methods 0.000 description 2
• 102100032435 BTB/POZ domain-containing adapter for CUL3-mediated RhoA degradation protein 2 Human genes 0.000 description 1
• VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
• 101000798415 Homo sapiens BTB/POZ domain-containing adapter for CUL3-mediated RhoA degradation protein 2 Proteins 0.000 description 1
• HEMINMLPKZELPP-UHFFFAOYSA-N Phosdiphen Chemical compound C=1C=C(Cl)C=C(Cl)C=1OP(=O)(OCC)OC1=CC=C(Cl)C=C1Cl HEMINMLPKZELPP-UHFFFAOYSA-N 0.000 description 1
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• 239000011324 bead Substances 0.000 description 1
• 238000009835 boiling Methods 0.000 description 1
• 229910052804 chromium Inorganic materials 0.000 description 1
• 239000011651 chromium Substances 0.000 description 1
• 239000012141 concentrate Substances 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 230000003247 decreasing effect Effects 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 238000009792 diffusion process Methods 0.000 description 1
• 238000002848 electrochemical method Methods 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
• 229910052737 gold Inorganic materials 0.000 description 1
• 239000010931 gold Substances 0.000 description 1
• 125000001475 halogen functional group Chemical group 0.000 description 1
• NBJBFKVCPBJQMR-APKOLTMOSA-N nff 1 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CCCN1C(=O)[C@H](CCCCN)NC(=O)[C@@H]1CCCN1C(=O)CC=1C2=CC=C(C=C2OC(=O)C=1)OC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCNC=1C(=CC(=CC=1)[N+]([O-])=O)[N+]([O-])=O)C(=O)NCC(O)=O)C1=CC=CC=C1 NBJBFKVCPBJQMR-APKOLTMOSA-N 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 239000004575 stone Substances 0.000 description 1
• 239000010409 thin film Substances 0.000 description 1
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Cited By (3)