JPS6217159U - - Google Patents
Info
- Publication number
- JPS6217159U JPS6217159U JP10709985U JP10709985U JPS6217159U JP S6217159 U JPS6217159 U JP S6217159U JP 10709985 U JP10709985 U JP 10709985U JP 10709985 U JP10709985 U JP 10709985U JP S6217159 U JPS6217159 U JP S6217159U
- Authority
- JP
- Japan
- Prior art keywords
- film
- image sensor
- photosensitive
- insulating substrate
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第１図はこの考案の密着型イメージセンサの構
造の一実施例を概略的に示す断面図、第２図はこ
の考案の密着型イメージセンサを適用した画像読
取装置を示す概略図、第３図は読取センサの説明
図、第４図は読取動作の説明図、第５図は従来の
密着型イメージセンサの断面図である。
２１…透明絶縁物基板、２２…透明導電膜、２
３，３４ａ，３４ｂ…感光部、２３ａ…第一導電
型ａ―Ｓｉ、２３ｂ…ｉ型ａ―Ｓｉ、２３ｃ…第
二導電型ａ―Ｓｉ、２４ａ，２４ｂ…金属電極、
２５…保護膜、２５ａ…第一膜、２５ｂ…第二膜
（遮光膜）、２７，３５…原稿、３１…読取セン
サ、３２…光源、３２ａ，１３２ａ，１３２ｂ…
発光部、３３…集束性ロツドレンズアレイ、３４
…密着型イメージセンサ、３６…ローラ、３５ａ
，３５ｂ…原稿上の部分。
FIG. 1 is a sectional view schematically showing an embodiment of the structure of the contact type image sensor of this invention, FIG. 2 is a schematic diagram showing an image reading device to which the contact type image sensor of this invention is applied, and FIG. 3 4 is an explanatory diagram of a reading sensor, FIG. 4 is an explanatory diagram of a reading operation, and FIG. 5 is a sectional view of a conventional contact type image sensor. 21...Transparent insulator substrate, 22...Transparent conductive film, 2
3, 34a, 34b...photosensitive part, 23a...first conductivity type a-Si, 23b...i type a-Si, 23c...second conductivity type a-Si, 24a, 24b...metal electrode,
25... Protective film, 25a... First film, 25b... Second film (light shielding film), 27, 35... Document, 31... Reading sensor, 32... Light source, 32a, 132a, 132b...
Light emitting section, 33... Focusing rod lens array, 34
...Contact image sensor, 36...Roller, 35a
, 35b...part on the manuscript.
Claims (1)
、該透明電極上に設けられ光電変換を行う感光部
と、該感光部上に設けられた金属電極と、表面保
護膜とを具える密着型イメージセンサにおいて、 該金属電極の大きさを、透明絶縁物基板の基板
面と平行な面内で見た時、感光部の表面領域と等
しいかそれより小さくして成る ことを特徴とする密着型イメージセンサ。 (2) 感光部の上側付近を覆う表面保護膜の部分
を第一膜及び第二膜を以つて構成し、該第二膜を
第一膜と同一装置内で連続して成膜されかつ遮光
膜として作用する膜として成ることを特徴とする
実用新案登録請求の範囲第１項記載の密着型イメ
ージセンサ。[Scope of Claim for Utility Model Registration] (1) A transparent electrode provided on a transparent insulating substrate, a photosensitive portion provided on the transparent electrode for performing photoelectric conversion, and a metal electrode provided on the photosensitive portion. In a contact image sensor comprising a surface protective film, the size of the metal electrode is equal to or smaller than the surface area of the photosensitive part when viewed in a plane parallel to the substrate surface of the transparent insulating substrate. A close-contact image sensor characterized by: (2) The part of the surface protective film that covers the upper part of the photosensitive part is composed of a first film and a second film, and the second film is formed continuously in the same equipment as the first film and is light-shielding. The contact type image sensor according to claim 1, which is formed as a film that acts as a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10709985U JPS6217159U (en) | 1985-07-13 | 1985-07-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10709985U JPS6217159U (en) | 1985-07-13 | 1985-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6217159U true JPS6217159U (en) | 1987-02-02 |
Family
ID=30983064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10709985U Pending JPS6217159U (en) | 1985-07-13 | 1985-07-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6217159U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0211356U (en) * | 1988-07-06 | 1990-01-24 | ||
| JPH0211358U (en) * | 1988-07-06 | 1990-01-24 | ||
| JPH0211357U (en) * | 1988-07-06 | 1990-01-24 | ||
| JPWO2015015760A1 (en) * | 2013-07-31 | 2017-03-02 | パナソニックＩｐマネジメント株式会社 | High frequency generator and electric discharge machining power supply device |
-
1985
- 1985-07-13 JP JP10709985U patent/JPS6217159U/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0211356U (en) * | 1988-07-06 | 1990-01-24 | ||
| JPH0211358U (en) * | 1988-07-06 | 1990-01-24 | ||
| JPH0211357U (en) * | 1988-07-06 | 1990-01-24 | ||
| JPWO2015015760A1 (en) * | 2013-07-31 | 2017-03-02 | パナソニックＩｐマネジメント株式会社 | High frequency generator and electric discharge machining power supply device |
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