JPS62170840A - Optical sensor for detecting hydrogen - Google Patents
Optical sensor for detecting hydrogenInfo
- Publication number
- JPS62170840A JPS62170840A JP61011093A JP1109386A JPS62170840A JP S62170840 A JPS62170840 A JP S62170840A JP 61011093 A JP61011093 A JP 61011093A JP 1109386 A JP1109386 A JP 1109386A JP S62170840 A JPS62170840 A JP S62170840A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- film
- waveguide
- hydrogen gas
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 239000001257 hydrogen Substances 0.000 title claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 230000031700 light absorption Effects 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000012528 membrane Substances 0.000 abstract description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 230000000274 adsorptive effect Effects 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- FRAALLYKYQKVNX-UHFFFAOYSA-N 1-phenyl-4-(1-phenylpyridin-1-ium-4-yl)pyridin-1-ium Chemical compound C1=CC=CC=C1[N+]1=CC=C(C=2C=C[N+](=CC=2)C=2C=CC=CC=2)C=C1 FRAALLYKYQKVNX-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 235000018936 Vitellaria paradoxa Nutrition 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 210000005252 bulbus oculi Anatomy 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は水素ガス濃度を全光式で検知する本質防雪型の
光センサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an essentially snow-proof type optical sensor that detects hydrogen gas concentration using an all-light method.
従来この種の全光式水素検知光センサとして第1図に示
す構造のものがある。A conventional all-optical hydrogen detection optical sensor of this type has a structure shown in FIG.
図において誘電体基板lに光導波路2が形成してあり、
この光導波路コの露出上面に水素と反応して光吸収係数
が変化する物質からなる光吸収層3が設けられ、さらに
この光吸収層3の上部に水素ガスを解離吸着する金属膜
から成る吸着層lが積層しである。そして光導波路−の
両端にはそれぞれ入力用光ファイバlおよび出力用光フ
ァイバ5Bが接続される。In the figure, an optical waveguide 2 is formed on a dielectric substrate l,
A light absorption layer 3 made of a substance whose light absorption coefficient changes when reacting with hydrogen is provided on the exposed upper surface of this optical waveguide, and an adsorption layer 3 made of a metal film that dissociates and adsorbs hydrogen gas is further provided on the top of this light absorption layer 3. Layer l is laminated. An input optical fiber 1 and an output optical fiber 5B are connected to both ends of the optical waveguide.
□接触により光@酸層3の光吸収係数が増大すると上記
エバネソセント光が吸収を受けて減衰し、出力用光ファ
イバ、tBへの出射光景が減少する。□ When the light absorption coefficient of the light@acid layer 3 increases due to contact, the evanescent light is absorbed and attenuated, and the output sight to the output optical fiber, tB, decreases.
したがって出力用光7アイバ、ltBからの出射光−量
の変化を測定すれば水素ガス濃度を知ることが、−C5
門る。Therefore, by measuring the change in the amount of light emitted from the output light 7 eyeball and ltB, it is possible to know the hydrogen gas concentration.
Gate.
異上記従来の構造では、水素ガス吸着層tの表面外気と
常時接触しており、このため水素ガス以外の種々の物質
との反応を受けやすく、特に水蒸気と反応することによ
って吸着層lおよび光吸収層3の水素ガスに対する反応
性が早期に劣化するという問題があった。In the conventional structure described above, the surface of the hydrogen gas adsorption layer t is in constant contact with the outside air, and therefore is susceptible to reactions with various substances other than hydrogen gas, and in particular reacts with water vapor, causing the adsorption layer 1 and light There was a problem in that the reactivity of the absorption layer 3 to hydrogen gas deteriorated early.
吸着N’lの表面全体を、水素ガスを透過し且つ少なく
とも水蒸気に対し不透過性を有する選択透過被膜で被覆
した。The entire surface of the adsorbed N'l was coated with a selectively permeable coating that was permeable to hydrogen gas and impermeable to at least water vapor.
水素ガスは選択透過膜を透過し、従来と同様に水素ガス
吸着層で解離吸着し、解離水素と反応した光吸収層の光
gIk収係微係数化して光導波路からの出射光の光量が
変化する。Hydrogen gas passes through the selectively permeable membrane, is dissociated and adsorbed in the hydrogen gas adsorption layer as in the past, and the light gIk of the light absorption layer that reacts with the dissociated hydrogen becomes a differential coefficient, and the amount of light emitted from the optical waveguide changes. do.
一方、水蒸気は選択透過膜によって侵入が阻止され、吸
着層および光吸収層の露出表面及び側縁が保護され三眞
るので長期にわたり安定したに素′;′・検知性能が維
持される。On the other hand, water vapor is prevented from entering by the selectively permeable membrane, and the exposed surfaces and side edges of the adsorption layer and light absorption layer are protected and protected, so that stable nitrogen detection performance is maintained over a long period of time.
〔実 施 例〕
以下本発明を図面に示した実施例に基づいて詳細に説明
する。[Embodiments] The present invention will be described in detail below based on embodiments shown in the drawings.
第1図ないし第2図において、10は基板、/lは光導
波路であり、導波路//は例えばLiNbO3基板中へ
のTiの熱拡散あるいはガラス基板中へのイオン交換拡
散等の手段で形成される。In Figures 1 and 2, 10 is a substrate, /l is an optical waveguide, and the waveguide // is formed by, for example, thermal diffusion of Ti into a LiNbO3 substrate or ion exchange diffusion into a glass substrate. be done.
そして光導波路l/の全長のうち両端近傍を残して導波
路//の露出表面を覆うように、基板上に光吸収層/、
2が積層形成してあり、さらにこの光吸収層/2上に吸
着層/3が積層しである。Then, a light absorption layer /,
2 are laminated, and an adsorption layer/3 is further laminated on the light absorption layer/2.
吸着層/3は、水素ガスを吸着解離して電子、プロトン
を発生させる金属薄膜から成り、光吸収層/2は上記の
電子、プロトンを受けて光吸収係数が変化する誘電体の
薄膜で構成されている。The adsorption layer/3 consists of a metal thin film that adsorbs and dissociates hydrogen gas to generate electrons and protons, and the light absorption layer/2 consists of a dielectric thin film whose light absorption coefficient changes in response to the electrons and protons mentioned above. has been done.
上記の吸着層/3の材質としてはパラジウム(Pd)あ
るいは白金(Pt)が好適である。Palladium (Pd) or platinum (Pt) is suitable as the material for the adsorption layer/3.
また光吸収層/2を形成する物質としてはWO3が好適
であり、その他一般にエレクトロクロミツクヲ示す無機
材料、例エバM003+V2O5,TiO2゜Ir(O
H)n、Rh203XH20などが使用可能である。In addition, WO3 is suitable as a material for forming the light absorption layer/2, and other inorganic materials that generally exhibit electrochromic properties, such as EVA M003+V2O5, TiO2゜Ir(O
H)n, Rh203XH20, etc. can be used.
また光吸収層12は有機材料で構成してもよく、例エハ
ヘブエルビオロゲン、シア/フェニールビ:オロゲン、
コバルトピリジル錯体、ポリマー化テ゛トラチオフルバ
レン(TTF)、ルテシウムシフタロシアニンなどが使
用できる。そして吸着層13の少なくとも水蒸気透過を
阻止し得るようなミクロな孔径をもった耐候性に優れた
材料の薄膜、例えば5102膜で形成されている。Further, the light absorption layer 12 may be composed of an organic material, such as Ehaheb Elviologen, Shea/Phenylviologen,
Cobalt pyridyl complexes, polymerized tetrathiofulvalene (TTF), lutetium siphthalocyanine, and the like can be used. The adsorption layer 13 is made of a thin film made of a material with excellent weather resistance, such as a 5102 film, having micropores that are capable of blocking at least water vapor transmission.
一例として電子線加熱蒸着法を用い、高純度のSiOペ
レットを蒸着源とし、酸素圧力/X1O−4Torr、
イオン化用高周波電力50W、イオン加速電圧−5oo
vの条件で厚み約500オングストロームの5i02膜
を蒸着することにより上記機能をもった被膜/lが得ら
れる。5i02以外にゼオライト、アルミナ等も被膜/
IIとして使用することができる0
なお被膜/グは吸着層/3、光吸収層/2の形成領域の
みに限定して設けてもよいが、図示例のように光導波路
//の全長にわたり形成しておけば導波路/lの保護に
もなるので都合がよい。As an example, an electron beam heating evaporation method is used, high purity SiO pellets are used as the evaporation source, oxygen pressure/X1O-4Torr,
High frequency power for ionization 50W, ion acceleration voltage -5oo
By depositing a 5i02 film with a thickness of about 500 angstroms under the conditions of v, a film/l having the above function can be obtained. In addition to 5i02, zeolite, alumina, etc. are also coated/
The film /g may be formed only in the area where the adsorption layer /3 and the light absorption layer /2 are formed, but it may be formed over the entire length of the optical waveguide // as shown in the example. This is convenient because it also protects the waveguide /l.
上記の場合は、両層/2 、13外の領域の被膜部分/
iは前述のような水素選択透過性を必要としを平滑化し
ておくことが伝搬損失を低減する上で望ましい。In the above case, both layers/2, the coating part in the area outside 13/
i requires selective hydrogen permeability as described above, and it is desirable to smooth it in order to reduce propagation loss.
上記のように構成されたセンサ素子20の光導波路//
の一端に入力用光ファイバ/jAを接続し、箇□所にあ
る半導体レーザ等の光源装置/乙に入力用光ファイバ1
5Aの他端を接続するとともに、出力用光ファイバ/j
Bの他端を光検出器/7に接続する。光源装置/乙から
出た光は光ファイバ/S゛A中を伝送され後センサ素子
20の光導波路//に入射し、導波路//を伝搬する。Optical waveguide of sensor element 20 configured as described above//
Connect the input optical fiber /jA to one end of the input optical fiber 1, and connect the input optical fiber 1 to the light source device such as a semiconductor laser located at
Connect the other end of 5A and connect the output optical fiber/j
Connect the other end of B to photodetector/7. The light emitted from the light source device/B is transmitted through the optical fiber/S'A, enters the optical waveguide // of the sensor element 20, and propagates through the waveguide //.
伝搬光の一部はエバネタセント光として光吸収層/2の
部分に浸み出している。このエバネタセント光の浸み出
し量は、光吸収層/2の屈折率と導波路//の屈折率の
大きさに依存し、約20%まで大きくすることができる
。センサ素子20の設N箇所に水素ガスが存在すると、
水素ガスは保護被膜/IIを透過して吸着層/3例えば
Pd薄膜に接触して解離吸着され、この解離された水素
が光吸収層/2と反応して該吸収層7.2の光吸収係数
が変化する。A part of the propagated light leaks into the light absorption layer/2 as evanescent light. The amount of this evanescent light seeping out depends on the refractive index of the light absorption layer /2 and the refractive index of the waveguide //, and can be increased to about 20%. When hydrogen gas is present at the N location of the sensor element 20,
Hydrogen gas passes through the protective coating /II, contacts the adsorption layer /3, for example, a Pd thin film, and is dissociated and adsorbed, and this dissociated hydrogen reacts with the light absorption layer /2 to absorb light in the absorption layer /2. The coefficient changes.
例えば光吸収層/2がWO3の場合はタングステンブロ
ンズを生成し着色する。For example, when the light absorption layer/2 is made of WO3, tungsten bronze is produced and colored.
これにより光導波路//を伝搬している導波光のエバネ
タセント光がWO3層中で吸収を受けて減衰し、光検出
器/7における受光量が減少する。As a result, the evanescent light of the guided light propagating through the optical waveguide // is absorbed and attenuated in the WO3 layer, and the amount of light received by the photodetector /7 is reduced.
そしてこの受光量は水素ガス濃度に依存するので、受光
量の変化量を測定することにより水素ガス濃度を検知す
ることができる。Since the amount of received light depends on the hydrogen gas concentration, the hydrogen gas concentration can be detected by measuring the amount of change in the amount of received light.
人力用光ファイバ/jA及び出力用光ファイバ75B、
=を接続するかわりに、光導波路//の一方の端面゛・
11
にアルミニウム蒸着膜等の反射体/ざを密着して設け、
他方の導波路端に入出力兼用の光ファイバ二□
15を接続したものであり、他の構造は前述実施例と同
様である。Optical fiber for human power/jA and optical fiber for output 75B,
Instead of connecting =, one end face of the optical waveguide //
11, a reflector such as an aluminum vapor-deposited film is provided in close contact with the
An optical fiber 2□15 for both input and output is connected to the other end of the waveguide, and the other structure is the same as that of the previous embodiment.
本例構造は、導波路//の往復両行程で光吸収層/2に
よるエバネンセント光吸収減衰を受けるので、前述実施
例構造に比べ素子をより小型化でき、また同一大きさの
素子で検知感度がより向上するという利点がある。The structure of this example undergoes evanescent light absorption attenuation by the light absorption layer 2 during both the round trip of the waveguide //, so the element can be made smaller compared to the structure of the previous example, and the detection sensitivity can be increased with the same size element. This has the advantage of further improving.
次に本発明の具体的数値例について説明する。Next, specific numerical examples of the present invention will be explained.
基板10としてLiNbO3を用い、T1を熱拡散させ
て基板lO中に光導波路//を形成し、この光導波路/
lの露出面上に光吸収層7.2としてWO3薄膜を7μ
mの厚さに真空蒸着した。Using LiNbO3 as the substrate 10, T1 is thermally diffused to form an optical waveguide // in the substrate lO.
A 7μ thin film of WO3 is placed as a light absorption layer 7.2 on the exposed surface of the
It was vacuum deposited to a thickness of m.
WO3は純度99.99%のペレットを用い、アルミナ
でコートされたW線ルツボを用いて抵抗加熱蒸着した。WO3 was deposited using resistance heating using pellets with a purity of 99.99% using a W-wire crucible coated with alumina.
蒸着条件は、酸素圧力/X1O−4TOrr 、イオン
化用高周波電力200W、イオン加速電圧=soov熱
蒸着法で付着させた。The deposition conditions were oxygen pressure/X1O-4 TOrr, ionization high frequency power of 200 W, and ion acceleration voltage=soov thermal evaporation method.
次にこの水素吸着層/3上に水素選択透過被膜/lとし
て5102膜を電子線加熱蒸着法で付着させた。蒸着源
として純度99.99%の5j−0ベレツトを用い、酸
素圧力/X1O−4TOrr 、イオン化用高周波電力
50W、イオン加速電圧−5oovの条件下で膜厚SO
Oオングストロームの8102膜/ゲが得られた。Next, on this hydrogen adsorption layer/3, a 5102 film was deposited as a hydrogen selective permeation film/l by an electron beam heating vapor deposition method. Using a 99.99% pure 5J-0 beret as a deposition source, the film thickness was determined under the conditions of oxygen pressure/X1O-4 TOrr, ionization high frequency power of 50 W, and ion acceleration voltage of -5oov.
A film of 8102 O angstroms/ge was obtained.
上記のようにして作成したセンサ素子の導波路//に接
続した光ファイバを妬して波長へ3μmの半導体レーザ
光を入射させ、出力側の光ファイバ端に接続した光検出
器で出力光量を測定したところ、70〜.!ooopp
mの水素ガス濃度範囲を約±S%の精度で測定すること
ができた。Semiconductor laser light with a wavelength of 3 μm is incident on the optical fiber connected to the waveguide // of the sensor element created as described above, and the output light amount is measured by the photodetector connected to the end of the optical fiber on the output side. When measured, it was 70~. ! ooopp
It was possible to measure a hydrogen gas concentration range of m with an accuracy of approximately ±S%.
また上記センサ素子を温度SO°C1湿度90%の条件
下に6ケ月間放置した後に水素ガス濃度測定を行なった
ところ、検知特性の低下はほとんど認められなかった。Further, when the hydrogen gas concentration was measured after the sensor element was left for 6 months at a temperature of SO DEG C. and a humidity of 90%, almost no deterioration in the detection characteristics was observed.
これに対し、保護被膜/IIの無い従来型のセンサ素子
に上記環境テストを施した後水素ガス濃度を測定したと
ころ、検知特性に大幅な低下が認められた。On the other hand, when the conventional sensor element without the protective film/II was subjected to the above environmental test and the hydrogen gas concentration was measured, a significant decrease in the detection characteristics was observed.
発明の効果〕
本発明によれば、水素選択透過性の被膜で水素ガス吸着
層を保論被覆しているので、被検知物である水素ガスは
従来と同様に自由にセンサの吸着層と接触すると同時に
、吸着層及び光吸収層の反応に悪影響を及ぼす他の成分
、特に水蒸気の透過が阻止され、したがって長期的に亘
り安定した水素検知性能を維持することができる。[Effects of the Invention] According to the present invention, since the hydrogen gas adsorption layer is coated with a hydrogen selectively permeable film, hydrogen gas, which is the object to be detected, can freely contact the adsorption layer of the sensor as before. At the same time, the permeation of other components, particularly water vapor, which adversely affect the reaction of the adsorption layer and the light absorption layer is prevented, and therefore stable hydrogen detection performance can be maintained over a long period of time.
第1図は本発明の一実施例を示す側断面図、第2図は同
平面図、第3図は本発明の他の実施例を示す側断面図、
第1図は従来の光センサを示す側断面図である。
10・・・・・基 板 // ・・光導波路/、!・・
・・・・光吸収層 /3・・水素吸着層/lI・・・・
・水素選択透過性保護被膜/!;、/!;A、、/3;
B・・・・・・光7アイバ/乙・・・・光源装置 /7
・・・・光検出器/r・・・・反射体
特許出願人 工業技術院長 等々力 達第1図
′m2図FIG. 1 is a side sectional view showing one embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is a side sectional view showing another embodiment of the present invention.
FIG. 1 is a side sectional view showing a conventional optical sensor. 10...Substrate //...Optical waveguide/,!・・・
...Light absorption layer /3...Hydrogen adsorption layer /lI...
・Hydrogen selectively permeable protective film/! ;,/! ;A,,/3;
B...Hikari 7 Aiba/Otsu...Light source device/7
...Photodetector/r...Reflector Patent applicant Todoroki Director, Agency of Industrial Science and Technology Figure 1'm2
Claims (2)
が変化する誘電体膜を設けるとともに該膜上に水素ガス
を解離吸着する金属膜を設け、前記導波路出射光の光量
変化で水素を検知するようにした水素検知光センサにお
いて、前記金属膜表面を、水素ガスを透過し且つ少なく
とも水蒸気に対し不透過性を有する選択透過被膜で保護
被覆したことを特徴とする水素検知光センサ。(1) Provide a dielectric film in contact with the optical waveguide whose light absorption coefficient changes due to reaction with hydrogen, and provide a metal film on the film that dissociates and adsorbs hydrogen gas, so that hydrogen gas can be absorbed by changing the amount of light emitted from the waveguide. A hydrogen detection optical sensor configured to detect hydrogen, characterized in that the surface of the metal film is protectively coated with a selectively permeable coating that is permeable to hydrogen gas and impermeable to at least water vapor.
許請求の範囲第1項記載の水素検知光センサ。(2) The hydrogen detection optical sensor according to claim 1, wherein the selective transmission film is a vapor deposited film of SiO_2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61011093A JPS62170840A (en) | 1986-01-23 | 1986-01-23 | Optical sensor for detecting hydrogen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61011093A JPS62170840A (en) | 1986-01-23 | 1986-01-23 | Optical sensor for detecting hydrogen |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62170840A true JPS62170840A (en) | 1987-07-27 |
JPH0513458B2 JPH0513458B2 (en) | 1993-02-22 |
Family
ID=11768379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61011093A Granted JPS62170840A (en) | 1986-01-23 | 1986-01-23 | Optical sensor for detecting hydrogen |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62170840A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62251637A (en) * | 1986-04-24 | 1987-11-02 | Hochiki Corp | Hydrogen sensor |
JPH06235695A (en) * | 1992-08-21 | 1994-08-23 | Boehringer Mannheim Gmbh | Analysis element for liquid sample analysis |
JPH06242008A (en) * | 1993-02-10 | 1994-09-02 | Draegerwerk Ag | Device for colorimetric detection of gaseous component and/or vapor component of gas mixture |
WO1995030889A1 (en) * | 1994-05-09 | 1995-11-16 | Unisearch Limited | Method and device for optoelectronic chemical sensing |
JP2007248424A (en) * | 2006-03-20 | 2007-09-27 | Atsumi Tec:Kk | Hydrogen sensor |
JP2009244262A (en) * | 2008-03-28 | 2009-10-22 | General Electric Co <Ge> | Sensing system with optical fiber gas sensor |
KR100923104B1 (en) | 2008-09-19 | 2009-10-27 | 전남대학교산학협력단 | Optical fiber gas sensor using ultrasonic wave |
WO2010032979A3 (en) * | 2008-09-19 | 2010-07-01 | 전남대학교산학협력단 | Optical fiber sensor and optical fiber gas sensor which use ultrasonic waves |
-
1986
- 1986-01-23 JP JP61011093A patent/JPS62170840A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62251637A (en) * | 1986-04-24 | 1987-11-02 | Hochiki Corp | Hydrogen sensor |
JPH06235695A (en) * | 1992-08-21 | 1994-08-23 | Boehringer Mannheim Gmbh | Analysis element for liquid sample analysis |
JPH06242008A (en) * | 1993-02-10 | 1994-09-02 | Draegerwerk Ag | Device for colorimetric detection of gaseous component and/or vapor component of gas mixture |
WO1995030889A1 (en) * | 1994-05-09 | 1995-11-16 | Unisearch Limited | Method and device for optoelectronic chemical sensing |
JP2007248424A (en) * | 2006-03-20 | 2007-09-27 | Atsumi Tec:Kk | Hydrogen sensor |
WO2007108276A1 (en) * | 2006-03-20 | 2007-09-27 | Kabushiki Kaisha Atsumitec | Hydrogen sensor |
JP2009244262A (en) * | 2008-03-28 | 2009-10-22 | General Electric Co <Ge> | Sensing system with optical fiber gas sensor |
KR100923104B1 (en) | 2008-09-19 | 2009-10-27 | 전남대학교산학협력단 | Optical fiber gas sensor using ultrasonic wave |
WO2010032979A3 (en) * | 2008-09-19 | 2010-07-01 | 전남대학교산학협력단 | Optical fiber sensor and optical fiber gas sensor which use ultrasonic waves |
Also Published As
Publication number | Publication date |
---|---|
JPH0513458B2 (en) | 1993-02-22 |
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