JPS62165915A - Exposure device - Google Patents
Exposure deviceInfo
- Publication number
- JPS62165915A JPS62165915A JP61008226A JP822686A JPS62165915A JP S62165915 A JPS62165915 A JP S62165915A JP 61008226 A JP61008226 A JP 61008226A JP 822686 A JP822686 A JP 822686A JP S62165915 A JPS62165915 A JP S62165915A
- Authority
- JP
- Japan
- Prior art keywords
- alignment
- light
- excimer
- beam splitter
- beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 16
- 230000001070 adhesive effect Effects 0.000 claims abstract description 16
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 229920001225 polyester resin Polymers 0.000 claims description 3
- 239000004645 polyester resin Substances 0.000 claims description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 2
- 229910052805 deuterium Inorganic materials 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000010453 quartz Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 206010041662 Splinter Diseases 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体素子製造に用いる光学露光装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical exposure apparatus used for manufacturing semiconductor devices.
さらに詳しくは、半導体素子製造におけるホトリソグラ
フィ一工程の超微細加工を実現するために考案された縮
小投影型エキシマ−露光装置に関するものである。More specifically, the present invention relates to a reduction projection type excimer exposure apparatus devised to realize ultra-fine processing in one step of photolithography in the manufacture of semiconductor devices.
従来の技術
従来より半導体素・子特にＬＳＩ、ＶＬＳＩ等の微細加
工用として超高圧水銀灯を光源として用いた縮小投影型
露光・装置（ステッパー）が市販されている。しかしな
がら、従来のステッパーは、超高圧水銀灯のｇ線（ａ３
ｓｎｍ）やｉ線（３６５ｎｍ ）を用いているため、
解像度はｇ線で１．２７１ｍ。2. Description of the Related Art Conventionally, reduction projection type exposure apparatuses (steppers) using an ultra-high pressure mercury lamp as a light source have been commercially available for microfabrication of semiconductor devices, particularly LSIs, VLSIs, etc. However, conventional steppers use ultra-high pressure mercury lamp G-line (A3).
snm) and i-line (365nm),
The resolution is 1.271m on the g-line.
１線でＯ，Ｓμｍ程度が限界であった。これらの波長で
は、今後、ａＭｂｉｔＲＡＭや１ｓ Ｍｂｉ ｔＲＡＭ
製造に必要とされる０、５μｍの解像度を得ることは不
可能に近い。The limit for one line was about O.S.mu.m. At these wavelengths, aMbitRAM and 1s MbitRAM will be used in the future.
It is nearly impossible to obtain the 0.5 μm resolution required for manufacturing.
そこで、近年ｇ線やｉ線に比べより波長の短いＸｅＣｌ
（３０８ｍｍ ）やＫｒＦ（２４９ｍｍ）やＡｒＦ（１
９３ｎｍ ）等のエキシマ−レーザー光源を用いた露光
装置の開発が検討されるようになってきた。Therefore, in recent years, XeCl, which has a shorter wavelength than the g-line and i-line,
(308mm), KrF (249mm), ArF (1
Development of an exposure apparatus using an excimer laser light source such as 93 nm) has been considered.
発明が解決しようとした問題点
しかしながら、超高圧水銀灯に比べ、エキシマ−レーザ
ー光源は、出力が犬きく取れる反面、波長分布が非常に
狭く連続光を取り出せないため、アライメント光として
使用するのは不透光である。Problems the Invention Tried to Solve However, while excimer laser light sources have much higher output than ultra-high-pressure mercury lamps, their wavelength distribution is extremely narrow and continuous light cannot be extracted, making them unsuitable for use as alignment light. It is transparent.
すなわちマスクとウェハーのアライメントを行う際、ア
ライメント光として露光波長とは別の領域の波長を取り
出すことができない。アライメントと露光の波長に同一
の波長の光を用いた場合、アライメントキ一部がアライ
メント不良のまま露光される欠点がある。また、パルス
元に同期させてアライメントを行う必要があり制御系が
複雑になる欠点がある。従って、アライメント光源とし
て、超高圧水銀灯のような連続光源を別に用いる必要が
ある。That is, when aligning a mask and a wafer, it is not possible to extract a wavelength in a region different from the exposure wavelength as alignment light. If light of the same wavelength is used for alignment and exposure, there is a drawback that a portion of the alignment key may be exposed with poor alignment. In addition, it is necessary to perform alignment in synchronization with the pulse source, which has the disadvantage of complicating the control system. Therefore, it is necessary to use a separate continuous light source such as an ultra-high pressure mercury lamp as an alignment light source.
一方、アライメント方式としては、種々の方式が提案さ
れているが、原理的にはビームスプリッタ−を用いたＴ
ＴＬアライメント方式が最も良い。On the other hand, various alignment methods have been proposed, but in principle T
The TL alignment method is the best.
ところが、アライメント光と露光にそれぞれ別領域の波
長の光を用いると、少くとも、２波長領域の光を透す光
学系が必要となる。一般にエキシマ−元に用いる遠紫外
領域のレンズ系は、 ＣａＦ、。However, if lights with wavelengths in different regions are used for alignment light and exposure, an optical system that transmits light in at least two wavelength regions is required. The far-ultraviolet lens system generally used for excimer elements is CaF.
や石英レンズを用い接着剤を利用することなく組立が可
能であるが、ＴＴＬアライメントを行うためのビームス
プリッタ−には必らず接着剤が必要となる。ところが、
遠紫外領域の波長まで全て透過する接着剤が無かった為
に、エキシマ−光用のビームスプリッタ−は、今だ開発
されていなかった○
そこで、本発明ではＴＴＬアライメント方式を採用した
エキシマ−露光装置に必要欠くべからざるビームスプリ
ッタ−５すなわち、使用するエキシマ−光の波長とアラ
イメント光の波長の２領域に１吏用可能なビームスプリ
ッタ−を製作することにより超々ＬＳＩ製造用縮小投影
型エキシマ−露光装置を提供することを目的とした。Although it is possible to assemble the beam splitter using a quartz lens or a quartz lens without using an adhesive, an adhesive is always required for a beam splitter for performing TTL alignment. However,
A beam splitter for excimer light had not yet been developed because there was no adhesive that could transmit all wavelengths in the deep ultraviolet region. Therefore, in the present invention, an excimer exposure device that uses a TTL alignment method was developed. By manufacturing a beam splitter that is indispensable for 5 wavelengths, that is, a beam splitter that can be used in two regions: the wavelength of the excimer light used and the wavelength of the alignment light, reduction projection type excimer exposure for ultra-super LSI manufacturing can be achieved. The purpose was to provide equipment.
問題点を解決するだめの手段
すなわち、ビームスプリッタ−の基材として可視光域か
ら２００ｍｍまで透明な合成石英を用い、接着剤として
は、少くともエキシマ−光の波長とアライメント光の波
長の２領域に吸収のない樹脂を開発し接着剤として用い
ることにより２波長領域に使用可能なビームスプリッタ
ーを製作する。The only way to solve the problem is to use synthetic quartz, which is transparent from the visible light range to 200 mm, as the base material of the beam splitter, and to use an adhesive that has at least two wavelength ranges: the excimer light wavelength and the alignment light wavelength. By developing a resin that does not absorb light and using it as an adhesive, we will create a beam splitter that can be used in two wavelength regions.
作用
つまり、上述のビームスプリッタ−を用いることにより
、エキシマ−光源を用いた露光装置において、高精度な
ＴＴＬアライメント方式の採用が可能となる。In other words, by using the above-mentioned beam splitter, it becomes possible to employ a highly accurate TTL alignment method in an exposure apparatus using an excimer light source.
実施例
例えば、第１図に示すように、エキシマ−光源１、光学
ミラー２１インチグレーター３．コンデンサーレンズ４
．マスクホルダー５．ビームスプリッタ−６、縮小投影
レンズ７、ウェハーステージ８よりなる本体部９と、ア
ライメントレンズ１１、アライメント用ビームスプリッ
タ−１２゜アライメント光の１３２画像読取りカメラ１
４よりなるアライメント光学系１６、およびアライメン
ト光学系より得た画像信号を処理し、ウェハーステージ
の移動を制御するコンピューター１６よりなるエキシマ
−露光装置において、使用する露光用エキシマ−光の波
長とアライメント光の波長の２領域に使用可能なビーム
スプリッター６を製作する。For example, as shown in FIG. 1, an excimer light source 1, an optical mirror 21 inch grater 3. condenser lens 4
．． Mask holder5. A main body 9 consisting of a beam splitter 6, a reduction projection lens 7, a wafer stage 8, an alignment lens 11, an alignment beam splitter 12, and a camera 1 for reading 132 images of alignment light.
The wavelength of the excimer light used for exposure and the alignment light are determined in the excimer exposure apparatus, which includes an alignment optical system 16 consisting of 4, and a computer 16 that processes image signals obtained from the alignment optical system and controls the movement of the wafer stage. A beam splitter 6 that can be used in two wavelength regions is manufactured.
例えば、ｘｅｃｌ（ａｏｓｎｍ ）ｘキシマー光を用
い、アライメント光に超高圧水銀灯のｇ線（４３６ｍｍ
）を用いる場合には、ビームスプリッタ−の基材６人と
して合成石英を用い接着剤６Ｂとしてエポキシ系樹脂（
エポテック３０５（２液性硬化タイプ）、米国エポキシ
テクノロジー社商品名等）を用いて接着したビームスプ
リノターを用意する。このときエポテック３０６の接着
の分光透過率は第２図に示すように２８０ｎｍから可視
光域までほぼ１００％透明であり、アライメント光（４
３６ｎｍ）と露光（３０８ｎｍ ）に同時に使用可能
である。なお、このとき、使用するレジストは、当然、
４３６１ｍの波長に不感応性であり３０８ｎｍの波長に
感応するものを用いる必要がある。For example, use xecl (aosnm) x ximer light and use the g-line (436 mm
), synthetic quartz is used as the base material of the beam splitter and epoxy resin (
Prepare a beam splinter glued using Epotec 305 (two-component curing type, trade name of American Epoxy Technology Co., Ltd.). At this time, the spectral transmittance of Epotec 306 adhesive is almost 100% transparent from 280 nm to the visible light range, as shown in Figure 2, and the alignment light (4
36 nm) and exposure (308 nm) at the same time. In addition, at this time, the resist used is, of course,
It is necessary to use a material that is insensitive to a wavelength of 4361 m and sensitive to a wavelength of 308 nm.
また、ＫｒＦ（２ａ９ｎｍ ）エキシマ−光を用い、
アライメント光に超高圧水銀灯のｉ線（３６６ｎｍ）を
用いる場合には、ビームスプリッタ−の基材はやはり合
成石英を用い、接着剤として、アクリル・ポリエステル
系の樹脂を用いて接着したビームスプリッタ−を製作す
る。このとき、アクリル・ポリエステル系（例えば、−
ＯＨ２−ＯＣＯＣＨ＝ＧＨ２基等を含む多感応アクリレ
ート）の接着剤の分光透過率の一例を第３図に示しであ
るが、この場合、アライメント光３６５ ｎｍと露光２
４９ ｎｆｆ１の間に２７２ ｎｍの吸収があるが、少
くとも３６６ｎｍ と２４９ｎｍの波長透過率は両方と
も９８％以上であり、十分使用可能なことがわかる。な
お、この場合も、使用レジストは当然、２４９ｎｍの光
に感応し、３６５ｎｍの光に感応しないものを用いるこ
とは言うまでもない。また、２７２ｎｍにある吸収は、
アライメント光のフィルターとしての効果もあるので都
合が良い。In addition, using KrF (2a9nm) excimer light,
When using the i-line (366 nm) from an ultra-high pressure mercury lamp as the alignment light, the base material of the beam splitter is synthetic quartz, and the beam splitter is bonded using acrylic/polyester resin as the adhesive. To manufacture. At this time, acrylic/polyester type (for example, -
An example of the spectral transmittance of an adhesive (OH2-OCOCH=multi-sensitized acrylate containing GH2 groups, etc.) is shown in FIG.
Although there is absorption at 272 nm between 49nff1 and 249nm, the wavelength transmittance of at least 366nm and 249nm is 98% or more, indicating that it can be used sufficiently. In this case as well, it goes without saying that the resist used is sensitive to 249 nm light and insensitive to 365 nm light. Also, the absorption at 272 nm is
This is convenient because it also has the effect of filtering the alignment light.
さらにまた、アクリル・ポリエステル系の樹脂は、光硬
化、熱硬化特性を付与することが容易であり、石英やガ
ラス材料への接着力も強いので実用性が高い。Furthermore, acrylic/polyester resins can be easily imparted with photocuring and thermosetting properties, and have strong adhesion to quartz and glass materials, making them highly practical.
以上の実施例では、アライメント光源として超高圧水銀
灯を用いた例を示したが、クセノンランプ、重水素ラン
プ、連続発振できるレーザー光源（例えばＨｅｅｄレー
ザー）等を用いることが可能なことは言うまでもない。In the above embodiment, an example was shown in which an ultra-high pressure mercury lamp was used as the alignment light source, but it goes without saying that a xenon lamp, a deuterium lamp, a continuous wave laser light source (for example, a Heed laser), etc. can also be used.
まだ、接着方法としては、上述の樹脂に熱硬化開始剤を
混ぜて熱硬化で接着しても良いし、光硬化開始剤を混ぜ
て光硬化で接着しても良い。さらに呼た、光と熱両方の
硬化開始剤を用いて、位置合せ後の固定は光で行ない、
完全接着は熱硬化で行っても良い。However, as an adhesion method, a thermosetting initiator may be mixed with the above-mentioned resin for adhesion by thermosetting, or a photocuring initiator may be mixed for adhesion by photocuring. Furthermore, using both optical and thermal curing initiators, fixation after alignment is performed with light,
Complete adhesion may be achieved by thermosetting.
発明の効果
すなわち、少くとも使用するエキシマ−光の波長とアラ
イメント光の波長の２波長領域に吸収の無い接着剤を用
いてビームスプリッタ−を製作することにより、遠紫外
領域の露光波長（３０８μｍ 、２４９１ｍ等）を使
用するエキシマ−露光装置において、ＴＴＬアライメン
ト方式を用いることが可能となり、超々ＬＳＩ製造に必
要な解像度とアライメント精度を実現できる効果がある
。The effect of the invention is that by manufacturing a beam splitter using an adhesive that does not absorb at least two wavelengths, that is, the wavelength of the excimer light used and the wavelength of the alignment light, the exposure wavelength in the deep ultraviolet region (308 μm, 2491m, etc.), it becomes possible to use the TTL alignment method, which has the effect of realizing the resolution and alignment accuracy required for ultra-super LSI manufacturing.
例えば、ＫｒＦエキシマ−レーザー元と超高圧水銀灯の
ｉ線を用いた場合、０．６μｍの解像度と±０．０６１
ｔｍのアライメント精度が実現できる。For example, when using a KrF excimer laser source and an i-line from an ultra-high pressure mercury lamp, the resolution is 0.6 μm and ±0.061
tm alignment accuracy can be achieved.
発明のエキシマ−露光装置に使用されるビームスプリッ
タ−用接着剤の分光透過率を示す図である。
１・・・・・・エキシマ−ｆ源、５・・・・・・マスク
ホルダー、６・・・・・・ビームスプリッタ−，６Ｂ・
・・・・・接着剤、７・・・・・・縮小投影レンズ、８
・・・・・・ウェハーステージ、１５・・・・・・アラ
イメント光学系。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名宕
２ 図
２′θ Ｊυθ３ｏδ
４０７） ｄＪｉ灰長 （得すFIG. 3 is a diagram showing the spectral transmittance of a beam splitter adhesive used in the excimer exposure apparatus of the invention. 1...Excimer f source, 5...Mask holder, 6...Beam splitter, 6B...
...Adhesive, 7...Reduction projection lens, 8
...Wafer stage, 15... Alignment optical system. Name of agent: Patent attorney Toshio Nakao and one other person
2 Figure 2′θ Jυθ3oδ
407) dJi Haicho (Tokusu)
Claims (4)
ージ、マスクホルダー、ビームスプリッター、アライメ
ント光学系を含む露光装置において、前記ビームスプリ
ッターの接着剤として少くともエキシマー光とアライメ
ント光の両方の光を透過する光硬化型または熱硬化型樹
脂または光熱硬化型樹脂を用い、アライメント光でマス
クとウェハーの位置合せを作った後、エキシマー光で露
光することが可能なことを特徴とした露光装置。(1) In an exposure apparatus that includes an excimer light source, a reduction projection lens, a wafer stage, a mask holder, a beam splitter, and an alignment optical system, light that transmits at least both excimer light and alignment light is used as an adhesive for the beam splitter. An exposure apparatus that uses a curable or thermosetting resin or a photothermosetting resin and is capable of aligning a mask and a wafer with alignment light and then exposing the wafer with excimer light.
い、接着剤としてアクリル系またはポリエステル系また
はアクリル・ポリエステル系の樹脂を用いることを特徴
とした特許請求の範囲第１項記載の露光装置。(2) The exposure apparatus according to claim 1, wherein a KrF excimer laser is used as the excimer light source, and an acrylic, polyester, or acrylic/polyester resin is used as the adhesive.
ンラプまたは重水素ランプまたは連続発信が可能なレー
ザー光等を用いることを特徴とした特許請求の範囲第２
項記載の露光装置。(3) Claim 2, characterized in that an ultra-high-pressure mercury lamp, a xenon lamp, a deuterium lamp, a laser beam capable of continuous transmission, or the like is used as the alignment light.
Exposure device described in Section 2.
ー光とアライメント光を通すことを特徴とした特許請求
の範囲第１項記載の露光装置。(4) The exposure apparatus according to claim 1, wherein the adhesive narrows a specific absorption region to allow exposure excimer light and alignment light to pass through.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61008226A JPS62165915A (en) | 1986-01-17 | 1986-01-17 | Exposure device |
| US07/004,133 US4724466A (en) | 1986-01-17 | 1987-01-16 | Exposure apparatus |
| US07/104,041 US4805000A (en) | 1986-01-17 | 1987-10-02 | Exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61008226A JPS62165915A (en) | 1986-01-17 | 1986-01-17 | Exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62165915A true JPS62165915A (en) | 1987-07-22 |
| JPH0365889B2 JPH0365889B2 (en) | 1991-10-15 |
Family
ID=11687252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61008226A Granted JPS62165915A (en) | 1986-01-17 | 1986-01-17 | Exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62165915A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191493A (en) * | 1988-01-27 | 1989-08-01 | Ushio Inc | Exposure in manufacturing printed board |
-
1986
- 1986-01-17 JP JP61008226A patent/JPS62165915A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191493A (en) * | 1988-01-27 | 1989-08-01 | Ushio Inc | Exposure in manufacturing printed board |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0365889B2 (en) | 1991-10-15 |
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