JPS62161209A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPS62161209A
JPS62161209A JP390886A JP390886A JPS62161209A JP S62161209 A JPS62161209 A JP S62161209A JP 390886 A JP390886 A JP 390886A JP 390886 A JP390886 A JP 390886A JP S62161209 A JPS62161209 A JP S62161209A
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
split
electrode
splits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP390886A
Other languages
Japanese (ja)
Inventor
Noriaki Yoshimura
吉村 紀明
Akira Washino
鷲野 晃
Noriaki Matsumoto
憲明 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DAIWA SHINKU KOGYOSHO KK
Original Assignee
DAIWA SHINKU KOGYOSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DAIWA SHINKU KOGYOSHO KK filed Critical DAIWA SHINKU KOGYOSHO KK
Priority to JP390886A priority Critical patent/JPS62161209A/en
Publication of JPS62161209A publication Critical patent/JPS62161209A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the need for sound absorbing substance by arranging many splits with a tilt angle and an interval to the edge of a piezoelectric base in a way that the primary surface acoustic wave caused from a surface acoustic electrode touches the adjacent split after the wave passes through the edge of one split. CONSTITUTION:A piezoelectric base 1 is a rectangular thin plate, an exciting electrode 2 and a reception electrode 3 are formed on the surface and the electrodes are formed interdigitally by vapor deposition by means of a light metal such as aluminum. Absorbing devices 4, 4 are provided to both ends of the base 1 and the splits 5, 5 having a tilt angle theta, length L are provided in parallel in the progressing direction of the primary surface acoustic wave at a prescribed interval (d). The relation among the tilt angle theta, the length L and the interval (d) is decided so that the primary surface acoustic wave A touches without fail to the adjacent split after the wave passes through the edge of one split. Thus, the primary surface acoustic wave generated from the surface acoustic wave electrode is attenuated rapidly and lost while repeating the reflection drawing a stepwise locus between two adjacent splits. Thus, the coating of sound absorbing substance is not required.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、濾波器、遅延素子等の弾性表面波装置に関し
、特に圧電体基板の無用な反射波の除去装置に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to surface acoustic wave devices such as filters and delay elements, and particularly to a device for removing unnecessary reflected waves from a piezoelectric substrate.

〈従来の技術〉 圧電体基板上に櫛型電極を設けてその電極を励起すると
弾性表面波が所定方向に進行する。この弾性表面波が素
子の端面で反射されてその反射波が電極に再入力すると
素子の特性に悪影響を及ぼす。
<Prior Art> When a comb-shaped electrode is provided on a piezoelectric substrate and the electrode is excited, surface acoustic waves propagate in a predetermined direction. When this surface acoustic wave is reflected by the end face of the element and the reflected wave is re-entered into the electrode, it has a negative effect on the characteristics of the element.

そこで従来は、圧電体基板の上面の基板端面近傍に接着
剤等の吸音物質を塗布することにより反射波を吸収する
方法が用いられていた。
Conventionally, therefore, a method has been used in which the reflected waves are absorbed by applying a sound absorbing material such as an adhesive to the upper surface of the piezoelectric substrate near the end surface of the substrate.

〈発明が解決しようとする問題点〉 しかし、この方法では吸音物質を塗布する工程が必要で
あり、この工程は自動化が困難である。
<Problems to be Solved by the Invention> However, this method requires a step of applying a sound absorbing material, and this step is difficult to automate.

また、吸音物質がもし電極へ付着すれば素子が不良品と
なるという問題があり、更に、吸音物質から発生するガ
スがエージング特性の劣化の要因となるなどの問題があ
った。
Further, if the sound absorbing material adheres to the electrodes, there is a problem that the device becomes a defective product, and furthermore, there is a problem that gas generated from the sound absorbing material causes deterioration of aging characteristics.

そこで本発明の目的は、吸音物質を用いることなく反射
波を除去する装置を提供することである。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a device that removes reflected waves without using sound-absorbing materials.

く問題点を解決する為の手段〉 本発明の弾性表面波装置は、圧電体基(反の端部に、弾
性表面波電極により生じた第一次弾性表面波が一つのス
プリントの端を通過したとき隣接するスプリントに当る
ような傾斜角と長さと間隔をもって、多数個のスプリン
トが配設されていることを特徴としている。
Means for Solving the Problems> The surface acoustic wave device of the present invention has a piezoelectric base (on the opposite end, a primary surface acoustic wave generated by a surface acoustic wave electrode passes through the end of one splint). It is characterized in that a large number of splints are arranged with inclination angles, lengths, and intervals such that when the splints hit adjacent splints, they hit adjacent splints.

〈作用〉 弾性表面波電極により生じた第一次弾性表面波は、基板
端部に達して最初のスプリットにより例えば90゛反射
され、この第二次弾性表面波は隣接するスプリットによ
り再反射され、このように互に隣接するスプリットの間
で反射を繰り返すことにより急速に減衰する。また、ス
プリントによる第二次反射波が弾性表面波電極に向って
反射されることがない。
<Operation> The primary surface acoustic wave generated by the surface acoustic wave electrode reaches the edge of the substrate and is reflected by the first split, for example, 90 degrees, and this secondary surface acoustic wave is re-reflected by the adjacent split, In this way, the light is rapidly attenuated by repeating reflection between adjacent splits. Further, the secondary reflected wave due to the splint is not reflected toward the surface acoustic wave electrode.

〈実施例〉 第1図に本発明を実施した弾性表面波遅延素子の斜視図
を示し、第2図にその要部を拡大した平面図を示す。
<Example> FIG. 1 shows a perspective view of a surface acoustic wave delay element embodying the present invention, and FIG. 2 shows an enlarged plan view of its main parts.

圧電体基板1は例えばLiNbO3より成る長方形の薄
片であって、その表面上に励振用電極2と受信用電極3
が形成されている。これらの弾性表面波電極2.3は例
えばAβ等の軽金属を櫛形に茎着形成したものである。
The piezoelectric substrate 1 is a rectangular thin piece made of LiNbO3, for example, and has an excitation electrode 2 and a reception electrode 3 on its surface.
is formed. These surface acoustic wave electrodes 2.3 are formed by attaching a light metal such as Aβ into a comb shape.

圧電体基板1の両端部にはそれぞれ本発明の吸収装置4
.4が設けられている。これは第2図に拡大図で示すよ
うに、第一次弾性表面波の進行方向に対し傾斜角θをも
ち、長さしのスプリット5−5が所定の間隔dをもって
互に平行に配設されている。このスプリット5−5の傾
斜角θ、長さし1間隔dの関係は、第一次弾性表面波A
が一つのスプリノ1〜の端を通過したときこの表面波A
が隣接するスプリットに必ず当るような関係になってい
る。このスプリット5を、電極2,3と同一材料、同一
工程で形成することができ、その場合は製造工程が合理
化される。
Absorption devices 4 of the present invention are provided at both ends of the piezoelectric substrate 1, respectively.
.. 4 are provided. As shown in the enlarged view in Fig. 2, this has an inclination angle θ with respect to the traveling direction of the primary surface acoustic wave, and long splits 5-5 are arranged parallel to each other at a predetermined interval d. has been done. The relationship between the inclination angle θ and the length 1 interval d of this split 5-5 is the first surface acoustic wave A
When passes through the edge of one splino 1~, this surface wave A
The relationship is such that always hits an adjacent split. This split 5 can be formed using the same material and the same process as the electrodes 2 and 3, and in that case, the manufacturing process can be streamlined.

また、電極2,3の形成材料よりも重い材料例えばPb
、Sn、Cu等を用いると、A1等の軽金属よりも吸収
効果が向上する。同様に、スプリット5を電極2,3と
同一材料、同一工程で形成する場合は、当然に同一厚さ
となるが、別工程で形成する場合は厚みが大きくなるほ
ど吸収効果が向上する。
In addition, a material heavier than the material forming the electrodes 2 and 3, such as Pb, may be used.
, Sn, Cu, etc., improve the absorption effect compared to light metals such as A1. Similarly, if the split 5 is formed using the same material and in the same process as the electrodes 2 and 3, it will naturally have the same thickness, but if it is formed in a separate process, the absorption effect will improve as the thickness increases.

第2図に示した直線形のスプリットの場合、傾斜角度θ
は45゛又はややそれよりも小さいものが好ましい。長
さしが大きいときは間隔dも大きくとることができ、反
対に長さLが小さいときは間隔dも小さくなる。実施例
を示せば基板としてLiNbO3の128°Yカツト基
板を使用し、周波数を100MHzとしたとき、波長は
約40μmとなり、スプリットの大きさはθ=45°、
L#565μm、d=14μmである。
In the case of the linear split shown in Figure 2, the inclination angle θ
is preferably 45° or slightly smaller. When the length is large, the distance d can be made large; on the other hand, when the length L is small, the distance d is also small. To give an example, when a 128° Y-cut substrate of LiNbO3 is used as the substrate and the frequency is 100 MHz, the wavelength is about 40 μm, and the size of the split is θ=45°.
L#565μm, d=14μm.

このような吸収装置において、弾性表面波電極2又は3
より発生した第一次弾性表面波が到来すると、第2図に
示すように、隣接する2本のスプリットの間で階段状の
軌跡を画く反射を繰り返しながら急速に減衰し実施的に
消滅する。
In such an absorption device, the surface acoustic wave electrode 2 or 3
When the first-order surface acoustic waves generated by the waves arrive, as shown in FIG. 2, they rapidly attenuate and practically disappear while repeating reflections in a step-like trajectory between two adjacent splits.

本発明のスブリソ1−の形状は種々な変形により実施す
ることができる。第3図に示すもの5Aは傾仝・1角θ
が中間で変化する中間屈折形である。傾斜角θは基板中
央部に近い前段ではθ−45°であるが、後段では45
°より増大している。従って間隔d1が後段で縮まり、
それだけ反射回数が増大する。第4図に示すもの5Bは
第3図と同様中間屈折形である後段での傾斜角がθく−
45゜になっている。第5図に示すもの50は曲線形で
あって、前端での傾斜角がθ≦45°であるが後端へ近
づくほどθが増大している。第6図に示すものは第2図
に示した直線形の後後を1本のスプリソ)5Dで連結し
たものである。
The shape of the sublime 1- of the present invention can be implemented through various modifications. The item 5A shown in Fig. 3 is the inclination/one angle θ
It is an intermediate refraction shape in which the angle changes in the middle. The tilt angle θ is θ-45° at the front stage near the center of the board, but it is 45° at the rear stage.
° has increased. Therefore, the interval d1 is reduced in the latter stage,
The number of reflections increases accordingly. The device 5B shown in FIG. 4 has an intermediate refraction type similar to that shown in FIG. 3, and the inclination angle at the rear stage is θ.
It is 45 degrees. The one 50 shown in FIG. 5 has a curved shape, and the angle of inclination at the front end is θ≦45°, but θ increases as it approaches the rear end. The one shown in FIG. 6 is one in which the linear type shown in FIG. 2 is connected at its rear and rear ends with one splice (5D).

〈発明の効果〉 本発明によれば、従来のように吸音物質を塗布する必要
がないのでそれに伴う種々な問題点が解消する。また、
弾性表面波電極と同一材料で形成する場合は同一工程で
同時に形成することができるので工程が合理化され製造
コストが低減する。
<Effects of the Invention> According to the present invention, there is no need to apply a sound-absorbing material as in the past, and various problems associated with this are resolved. Also,
When formed using the same material as the surface acoustic wave electrode, they can be formed simultaneously in the same process, which streamlines the process and reduces manufacturing costs.

【図面の簡単な説明】 第1図は本発明の一実施例を示す斜視図、第2図は第1
図の要部を示す正面図、第3図、第4図第5図及び第6
図は本発明の変形実施例を示す正面図である。 1−圧電体基板 2.3・−弾性表面波電極 4−吸収装置 5−スプリット
[Brief Description of the Drawings] Fig. 1 is a perspective view showing one embodiment of the present invention, and Fig. 2 is a perspective view showing an embodiment of the present invention.
Front view showing the main parts of the figure, Figures 3, 4, 5 and 6
The figure is a front view showing a modified embodiment of the present invention. 1-Piezoelectric substrate 2.3--Surface acoustic wave electrode 4-Absorption device 5-Split

Claims (2)

【特許請求の範囲】[Claims] (1)圧電体基板の端部に、弾性表面波電極により生じ
た第一次弾性表面波が一つのスプリットの端を通過した
とき隣接するスプリットに当るような傾斜角と長さと間
隔をもって、多数個のスプリットが配設されていること
を特徴とする弾性表面波装置。
(1) At the end of the piezoelectric substrate, there are a number of electrodes with an inclination angle, length, and spacing such that when the primary surface acoustic wave generated by the surface acoustic wave electrode passes through the end of one split, it hits the adjacent split. A surface acoustic wave device characterized in that a number of splits are arranged.
(2)上記スプリットが上記弾性表面波電極と同じ材料
により形成されている特許請求の範囲第1項記載の弾性
表面波装置。
(2) The surface acoustic wave device according to claim 1, wherein the split is formed of the same material as the surface acoustic wave electrode.
JP390886A 1986-01-10 1986-01-10 Surface acoustic wave device Pending JPS62161209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP390886A JPS62161209A (en) 1986-01-10 1986-01-10 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP390886A JPS62161209A (en) 1986-01-10 1986-01-10 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPS62161209A true JPS62161209A (en) 1987-07-17

Family

ID=11570285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP390886A Pending JPS62161209A (en) 1986-01-10 1986-01-10 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPS62161209A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334466A (en) * 1993-05-25 1994-12-02 Nec Corp Surface acoustic wave device
US5436011A (en) * 1993-04-16 1995-07-25 Bristol-Myers Squibb Company Solid pharmaceutical dosage form and a method for reducing abrasion
JP2006301362A (en) * 2005-04-21 2006-11-02 Canon Inc Lens barrel and imaging device equipped with lens barrel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260547A (en) * 1975-11-14 1977-05-19 Toshiba Corp Elastic surface wave absorber
JPS61156912A (en) * 1984-12-27 1986-07-16 Nec Corp Surface acoustic wave device
JPS61171211A (en) * 1985-01-22 1986-08-01 シーメンス、アクチエンゲゼルシヤフト Electric filter actuated by sound wave

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260547A (en) * 1975-11-14 1977-05-19 Toshiba Corp Elastic surface wave absorber
JPS61156912A (en) * 1984-12-27 1986-07-16 Nec Corp Surface acoustic wave device
JPS61171211A (en) * 1985-01-22 1986-08-01 シーメンス、アクチエンゲゼルシヤフト Electric filter actuated by sound wave

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436011A (en) * 1993-04-16 1995-07-25 Bristol-Myers Squibb Company Solid pharmaceutical dosage form and a method for reducing abrasion
JPH06334466A (en) * 1993-05-25 1994-12-02 Nec Corp Surface acoustic wave device
JP2006301362A (en) * 2005-04-21 2006-11-02 Canon Inc Lens barrel and imaging device equipped with lens barrel

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