JPS621535B2 - - Google Patents
Info
- Publication number
- JPS621535B2 JPS621535B2 JP22937082A JP22937082A JPS621535B2 JP S621535 B2 JPS621535 B2 JP S621535B2 JP 22937082 A JP22937082 A JP 22937082A JP 22937082 A JP22937082 A JP 22937082A JP S621535 B2 JPS621535 B2 JP S621535B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- discharge
- plasma
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000010574 gas phase reaction Methods 0.000 claims description 2
- 239000012071 phase Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- 241000533950 Leucojum Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- KSOCVFUBQIXVDC-FMQUCBEESA-N p-azophenyltrimethylammonium Chemical compound C1=CC([N+](C)(C)C)=CC=C1\N=N\C1=CC=C([N+](C)(C)C)C=C1 KSOCVFUBQIXVDC-FMQUCBEESA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明は、プラズマ気相反応（以下PCVDと
いう）に関するものである。この発明はPCVDを
大面積で行なう場合、または容量結合型のグロー
放電をその電極間距離を10cm以上例えば30〜50cm
離して行なう場合、においても放電を均質に行な
うことを目的としている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to plasma gas phase reaction (hereinafter referred to as PCVD). This invention is useful when performing PCVD on a large area, or when performing capacitively coupled glow discharge with a distance between electrodes of 10 cm or more, e.g. 30 to 50 cm.
The purpose is to perform discharge uniformly even when the discharge is performed at a distance.
この発明はPCVD法において、基板を配置し被
膜を形成する有効空間を大きく0.2m2以上有する
場合、グロー放電がきわめて不均質になり、局部
的に強い放電が弱い均質な放電とともに発生し、
形成される膜質を劣化させてしまうことを防ぐた
め、電極と有効空間との間に電気的に基板から遊
離（フローテイング）しかつ反応性気体の通過を
防げないグリツトを設けることを目的としてい
る。 In the PCVD method, when the effective space for arranging the substrate and forming the film is larger than 0.2 m 2 , the glow discharge becomes extremely inhomogeneous, and locally strong discharge occurs together with weak homogeneous discharge.
In order to prevent the quality of the formed film from deteriorating, the purpose is to provide grit between the electrode and the effective space that is electrically free from the substrate (floating) and does not prevent the passage of reactive gases. .
この発明は、反応性気体の供給口のノズルと電
極とグリツトとの関係において、電極と有効空間
との間にグリツトを設け、さらに反応性気体のノ
ズルを電極またはグリツトを併用せしめたことを
特徴としている。 This invention is characterized in that, in the relationship between the nozzle of the reactive gas supply port, the electrode, and the grit, grit is provided between the electrode and the effective space, and the reactive gas nozzle is also used with the electrode or the grit. It is said that
従来PCVDに関しては、第１図にその概要を示
しているが、グロー放電法を用いた平行平板電極
型においては、その平板間隔を１〜10cm例えば３
cmとして放電を行ないやすくしていた。 Regarding conventional PCVD, an outline is shown in Figure 1, but in the parallel plate electrode type using the glow discharge method, the plate spacing is 1 to 10 cm, for example, 3 cm.
cm, making it easier to discharge.
第１図はかかる構造を示したものであり、反応
炉２には一対の電極３，８が13.5MHzの高周波
電源２５と４１，４２により連続して設けられて
いる。さらに反応性気体は２６，２７，２８よ
り、例えば水素、シラン、ドーピングガス
（B2H6、PH3等）がそれぞれ導入され、流量計２
２、バルブ２３よりなつており、これらはノズル
５より放電領域４５に供給される。基板１はヒー
タ４６により加熱され、一方の電極８上に設けら
れている。 FIG. 1 shows such a structure, in which a pair of electrodes 3 and 8 are successively provided in the reactor 2 by a 13.5 MHz high frequency power source 25 and 41, 42. Furthermore, reactive gases such as hydrogen, silane, and doping gases (B 2 H 6 , PH 3, etc.) are introduced from 26, 27, and 28, respectively, and the flowmeter 2
2 and a bulb 23, which are supplied to the discharge area 45 from the nozzle 5. The substrate 1 is heated by a heater 46 and is provided on one electrode 8 .
かかる構造によつて反応性気体例えばシランを
分解して被形成面上に非単結晶半導体を形成させ
ている。この反応後は反応性成物は４４をへて排
気系にバルブ１４，１５、真空ポンプ１６により
放出される。ニードルバルブ１４により反応炉内
は0.01〜0.5torr例えば0.1torrに保持され、電気エ
ネルギーを２５より供給することにより、有効空
間にはグロー放電がおき、反応生成物が基板１上
に形成される。 With this structure, a reactive gas such as silane is decomposed to form a non-single crystal semiconductor on the surface to be formed. After this reaction, the reactive products are discharged through 44 to the exhaust system by valves 14, 15 and vacuum pump 16. The interior of the reactor is maintained at 0.01 to 0.5 torr, for example 0.1 torr, by the needle valve 14, and by supplying electrical energy from 25, a glow discharge is generated in the effective space, and reaction products are formed on the substrate 1.
しかしこの時この電極３，８が50cm□またはそ
れ以上である場合、この放電は必ずしも安定では
なく、局部的に輝度の大きい（明るい）強い放電
４３が数個観察され、この線状の電極間を走る放
電は電極上を５〜50cm／秒の速さに移動してい
る。この局部強放電はこの領域は他の均質な領域
に比べて10倍以上の高エネルギ密度となるため、
ここで反応した反応生成は強い運動エネルギをも
つ基板表面をスパツタ（損傷）してしまう。その
ため形成された被膜は特性がきわめて悪く、例え
ば珪素を用いたアモルフアス太陽電池を作ろうと
する時、その中にいわゆる多結晶体が混入し、そ
の変換効率を５％も悪くし、さらに製造のバラツ
キも０〜５％も大きく、実用上きわめて重大な問
題であつた。 However, if the electrodes 3 and 8 are 50 cm square or more, this discharge is not necessarily stable, and several locally high-intensity (bright) strong discharges 43 are observed, and the distance between the linear electrodes is The discharge running through the electrode is moving at a speed of 5 to 50 cm/sec. This local strong discharge has a high energy density of more than 10 times in this area compared to other homogeneous areas, so
The reaction products produced here have a strong kinetic energy and spatter (damage) the substrate surface. Therefore, the properties of the formed film are extremely poor. For example, when trying to make an amorphous solar cell using silicon, so-called polycrystals are mixed into the film, reducing the conversion efficiency by as much as 5%, and causing manufacturing variations. The difference was as large as 0 to 5%, which was a very serious problem in practice.
さらにこの局部強放電は電極間隙を５cm以上例
えば10〜50cm離すとさらにひんぱんにおき、放電
がきわめて不安定になつてしまうことが判明し
た。 Furthermore, it has been found that this localized strong discharge occurs more frequently when the electrode gap is set at a distance of 5 cm or more, for example, 10 to 50 cm, and the discharge becomes extremely unstable.
本発明はかかる不均質放電を防ぐため、このフ
ローテインググリツトを配設することにより、こ
の問題を完全に解くことができるという大きな特
徴を有する。 The present invention has a major feature in that it can completely solve this problem by providing floating grits to prevent such non-uniform discharge.
そのため大陽電池をPIN接合型を有して珪素を
用いて行なつた時に６〜８％を大面積例えば20cm
×60cmという基板で作ることができ、製造歩留り
も従来の30％より90％以上に向上させることがで
きるという大きな特徴を有する。 Therefore, when a Taiyo cell has a PIN junction type and is made of silicon, 6 to 8% is
It can be manufactured using a substrate measuring 60cm x 60cm, and its major feature is that the manufacturing yield can be improved from 30% to over 90%.
以下に図面に従つて本発明の実施例を記す。 Examples of the present invention will be described below with reference to the drawings.
実施例 １ 第２図は本発明の概要を示すものである。Example 1 FIG. 2 shows an overview of the present invention.
図面において、被形成面を表面に有する基板１
は裏面を互いに重ね合わせて対をなし、石英ホル
ダ１９に配列されている。反応炉２へは予備室１
９にとびら２１より挿入し、ポンプ３１にてバル
ブ３０を開として真空引をする。10-3torr以下の
十分な真空引がなされた後、ゲート弁２０を開け
て図の如く基板１、ホルダ１９を配設する。反応
炉２内で基板１は上方下方より赤外線ランプ７，
７′により加熱され、100〜400℃例えば250℃に加
熱される。 In the drawings, a substrate 1 having a surface to be formed on
are arranged in pairs in the quartz holder 19 with their back surfaces overlapping each other. Preliminary room 1 to reactor 2
9 through the door 21, and open the valve 30 with the pump 31 to draw a vacuum. After sufficient evacuation to 10 -3 torr or less is achieved, the gate valve 20 is opened and the substrate 1 and holder 19 are placed as shown in the figure. In the reactor 2, the substrate 1 is exposed to infrared lamps 7 from above and below.
7' to 100-400°C, for example 250°C.
反応性気体をドーピング系２４にて２６，２
７，２８，２９より流量計２２、バルブ２３をへ
て供給口１０をへてノズル５は一方の電極３を併
ね、他方の電極８と容量結合型のグロー放電をお
こさしめる。この一対の電極はその外側を石英フ
ード３３，３４でおおわれ、反応炉２の内壁との
寄生放電を防止している。電極３，８は高周波電
源２５の端子４１，４２を介して電気エネルギが
供給される。 26,2 reactive gas in doping system 24
7, 28, 29, a flow meter 22, a valve 23, and a supply port 10, the nozzle 5 is connected to one electrode 3 and the other electrode 8 to generate a capacitively coupled glow discharge. This pair of electrodes is covered with quartz hoods 33 and 34 on the outside to prevent parasitic discharge with the inner wall of the reactor 2. Electrical energy is supplied to the electrodes 3 and 8 via terminals 41 and 42 of a high frequency power source 25.
さらに図面においては一対の電極３，８と基板
１の配設された有効空間４５との間に網目状の導
電性のグリツド例えば１〜２cm□の空隙のステン
レスメツシユ１２，１３を配設した。このグリツ
トは電極と概略平行を有し、グロー放電の陽光柱
で等電位面を構成させている。このためこのグリ
ツトは一般に電極より10〜40mm離間して設けてい
る。 Further, in the drawing, a mesh-like conductive grid, for example, stainless steel meshes 12 and 13 with a gap of 1 to 2 cm square, is disposed between the pair of electrodes 3 and 8 and the effective space 45 in which the substrate 1 is disposed. . This grit is approximately parallel to the electrode and constitutes an equipotential surface in the positive column of the glow discharge. For this reason, the grit is generally spaced 10 to 40 mm from the electrode.
さらに真空排気系３２は圧力調整用のニードル
バルブ１４とストツプバルブ１５、真空ポンプ１
６よりなつている。 Furthermore, the vacuum exhaust system 32 includes a needle valve 14 for pressure adjustment, a stop valve 15, and a vacuum pump 1.
It's more familiar than 6.
図面において反応炉は高さ800mm、巾800mm奥行
1000mmを有し、有効空間４５は20cm×60cmの基板
を互いに８cm離し20枚（10セツト）配し、20cm×
60cm×60cmの場合である。 In the drawing, the reactor is 800mm high, 800mm wide and deep.
The effective space 45 has 20 pieces (10 sets) of 20cm x 60cm boards spaced 8cm apart from each other.
This is the case of 60cm x 60cm.
かくの如くして電極間隔も約30cm離れ、また電
極面積も60cm□と大きい時、グリツドを設けない
場合放電は従来例でもみられる局部高輝度放電が
さらにはげしくおきてしまう。 As described above, when the electrode spacing is approximately 30 cm apart and the electrode area is as large as 60 cm square, if no grid is provided, the localized high-intensity discharge seen in the conventional example will occur even more intensely.
結果としてグリツトがない場合、全く均質な膜
圧を有するプラズマCVDを期待することができ
ない。そのため反応性気体を２６よりシラン２７
よりジボラン、２８よりフオスヒン、２９よりキ
ヤリアガス例えば水素を供給して、１つのＰ
（100Å）Ｉ（5000Å）Ｎ（100Å）のPIN接合を
ガラス基板上のCTF（透明導電膜）上に設ける
と、その変換効率は20×60cm2にて１％を得ること
も不可能であつた。即ち15mm×40cmのセルを40段
直列連結した方式において、本来開放電圧30V以
上、短絡電流600mA以上、効率５％以上を得る
べきところ、電圧は５〜25Vと大きくばらつき、
電流は70〜500mAと大きくばらつき、さらに効
率0.1〜２％と大きくばらついてしまつた。 As a result, in the absence of grit, plasma CVD with completely homogeneous film thickness cannot be expected. Therefore, the reactive gas is silane 27 rather than 26.
By supplying diborane from 28, phosphine from 28, and a carrier gas such as hydrogen from 29, one P
When a (100 Å) I (5000 Å) N (100 Å) PIN junction is provided on a CTF (transparent conductive film) on a glass substrate, it is impossible to achieve a conversion efficiency of 1% at 20 x 60 cm2. Ta. In other words, in a system in which 40 cells of 15 mm x 40 cm are connected in series, an open circuit voltage of 30 V or more, a short circuit current of 600 mA or more, and an efficiency of 5% or more should be obtained, but the voltage varies widely from 5 to 25 V.
The current varied widely, ranging from 70 to 500 mA, and the efficiency also varied widely, ranging from 0.1 to 2%.
しかし本発明のグリツトを図の如く配設すると
この局部高輝度放電が全くなくなり、均質な青黒
い放電がみられ、特性も前記した本来の特性を有
することができた。 However, when the grit of the present invention was arranged as shown in the figure, this localized high-intensity discharge was completely eliminated, a homogeneous blue-black discharge was observed, and the characteristics also had the original characteristics described above.
このことは大面積の太陽電池を作る場合にきわ
めて重要なことであり、従来のいかなるプラズマ
CVD装置においてもみられなかつたことであ
る。 This is extremely important when making large-area solar cells, and any conventional plasma
This was not observed even in CVD equipment.
さらに本発明で重要なことは、この有効空間に
電気的にフローテイングのグリツト１２の間隙を
へて反応性気体およびプラズマ放電が侵入し、さ
らに反応生成物を基板上に形成せしめ、不要生成
物は他のグリツト１３より排気ノズル９を有する
フード６より外部に放出するようになつている。
即ちこのグリツト間にも陽光柱の電位こうばいを
有しこの上下のグリツト１２，１３を互いに連結
し基板を静電遮へいを行なつていないことであ
る。 Furthermore, what is important in the present invention is that the reactive gas and plasma discharge enter this effective space through the gap between the electrically floating grits 12, further forming reaction products on the substrate and removing unnecessary products. The grit 13 is discharged to the outside through a hood 6 having an exhaust nozzle 9 than other grits 13.
That is, the potential of the positive column is maintained between the grits, and the upper and lower grits 12 and 13 are connected to each other to shield the substrate from static electricity.
かかる静電遮へいを行なうと、この遮へいされ
た内部空間で速やかにプラズマ状態が消滅し、反
応生成物がパウダーとなり、基板表面に被膜形成
を行うことができなかつた。 When such electrostatic shielding was performed, the plasma state quickly disappeared in the shielded internal space, and the reaction product turned into powder, making it impossible to form a film on the substrate surface.
このためいわゆるCF2＋O2等を用いたプラズマ
エツチングを用いる静電遮へいの構造とは全く異
なつていることがわかつた。 For this reason, it was found that the structure is completely different from that of electrostatic shielding using plasma etching using so-called CF 2 +O 2 or the like.
即ち本発明はエツチングではなくデイポジシヨ
ンであり、プラズマ状態を有する反応性気体の本
来固体（CF4ではＦ*という気体）であり、さら
にこの固体の反応生成物をプラズマ活性をして大
きい空間４５で有効に長時間活性になることが重
要である。そのためこのグロー放電の陽光柱内部
でも電位こうばいを弱干有せしめているという特
徴を有す。 That is, the present invention is not an etching process but a deposition process, in which the reactive gas is essentially solid (in the case of CF4 , it is a gas called F * ) and has a plasma state. It is important that it remains effectively active for a long time. Therefore, the glow discharge has a characteristic in that the potential is slightly reduced even inside the positive column.
この図面での容量結合型のグロー放電の電界が
被形成面と概略平行を有し、基板表面への反応性
気体のスパツタリングを防止している。さらに反
応性気体の流れも被形成面に平行となつており、
被膜形成がなめらかにおきるようにしている。 In this figure, the electric field of the capacitively coupled glow discharge is approximately parallel to the surface on which it is formed, thereby preventing sputtering of reactive gas onto the substrate surface. Furthermore, the flow of reactive gas is also parallel to the surface to be formed.
This allows the film to form smoothly.
この図面では反応炉は１つであるが、これを
PIN接合を形成する反応炉をそれぞれ独立せしめ
Ｐ型半導体層用の反応炉、Ｉ型半導体層用の反応
炉およびＮ型半導体層用の反応炉とし、それらを
互いに連続し、外部にふれることなく、基板を移
動するマルチチヤンバー方式例えば本発明人の出
願になる特許願56―55608（53―152887
S53.12.10出願の分割）を用いると有効である。
また本発明は第２図に示す如く、グリツトを正極
８負極３のそれぞれ側に各一対１２，１３と設け
ている。 In this drawing, there is one reactor, but this
The reactors for forming the PIN junction are made independent, and are used as a reactor for the P-type semiconductor layer, a reactor for the I-type semiconductor layer, and a reactor for the N-type semiconductor layer, and these are connected to each other without touching the outside. For example, patent application No. 56-55608 (No. 53-152887) filed by the present inventor.
S53.12.10 Division of application) is effective.
Further, in the present invention, as shown in FIG. 2, a pair of grits 12 and 13 are provided on each side of the positive electrode 8 and the negative electrode 3.
このグリツトは一方のみでもそのグリツトの設
けられた電極側では有効であるが、膜質改善のた
め双方に設けることにより局部強放電を完全に防
止することができた。 Although this grit is effective on the electrode side where the grit is provided only on one side, by providing it on both sides to improve film quality, it was possible to completely prevent strong local discharge.
実施例 ２
第２図においては、ノズル５と電極３とが同一
物よりなつており、ステンレス板にノズル穴４を
設けたものである。さらにこの電極３、ノズル５
グリツト７の問題に関し、第２図のPCVD装置で
あつて特にその電極、グリツト等の導入系５０、
排気系５１を第３図の如くに変形を有せしめるこ
とができる。Embodiment 2 In FIG. 2, the nozzle 5 and the electrode 3 are made of the same material, and the nozzle hole 4 is provided in a stainless steel plate. Furthermore, this electrode 3, nozzle 5
Regarding the problem of grit 7, the PCVD apparatus shown in FIG.
The exhaust system 51 can be modified as shown in FIG.
第３図は寄生放電防止用フード３３，３４を有
し、上側より下側に重力方向に反応性気体を流れ
させる方式であり、上側が反応性気体の導入口５
０、下側が排気系５１を示す。 Fig. 3 shows a system that has hoods 33 and 34 for preventing parasitic discharge, and allows reactive gas to flow in the direction of gravity from the upper side to the lower side, with the upper side being the reactive gas inlet 5.
0, the lower side shows the exhaust system 51.
第３図Ａは電極３がステンレスの配管であり、
そこに穴をあけ反応性気体のノズル５としたもの
である。グリツト１２はステンレスメツシユ（間
隙は15mm□）を設けている。排気系５１は電極８
と排気ノズル９とを少し間隔をあけたものであ
る。実施例１と同様の効果を有せしめることがで
きた。 In Figure 3A, the electrode 3 is stainless steel piping,
A hole was made there to serve as a nozzle 5 for the reactive gas. The grit 12 is provided with a stainless steel mesh (the gap is 15 mm□). The exhaust system 51 has an electrode 8
and the exhaust nozzle 9 are spaced a little apart. The same effects as in Example 1 could be achieved.
実施例 ３
第３図Ｂは本発明の他の実施例を示す。図面よ
り明らかな如く、電極３、グリツト１２、反応性
気体の導入ノズル５を有している。図面では３，
１２はステンレスで設け５は石英で作つた。Embodiment 3 FIG. 3B shows another embodiment of the invention. As is clear from the drawings, it has an electrode 3, grit 12, and a reactive gas introduction nozzle 5. In the drawing, 3,
12 was made of stainless steel, and 5 was made of quartz.
かくの如くすると、実施例１、２に比べて、フ
レーク（雪片）の発生が少なくなつた。即ちフレ
ークがグリツト部に付着し落下することにより被
形成面に付着し、ピンホール等を作りやすいが、
これを防ぐことができた。 By doing so, the occurrence of flakes (snowflakes) was reduced compared to Examples 1 and 2. In other words, when the flakes adhere to the grit and fall, they adhere to the surface to be formed and easily create pinholes, etc.
This could have been prevented.
実施例 ４ 第３図Ｃは本発明の他の実施例を示す。Example 4 FIG. 3C shows another embodiment of the invention.
図面において電極３の下側１〜４cmにステンレ
ス配管を用いたグリツド１２を有し、このグリツ
ド部が外部と電気的に絶縁され、かつ反応性気体
の導入口５を有している。かくすると上側には第
３図Ｂよりも構造を簡単にでき、かつフレークの
発生をさらに少なくさせることができた。被膜成
長速度については全く変化がなかつた。 In the drawing, a grid 12 made of stainless steel piping is provided 1 to 4 cm below the electrode 3, and this grid portion is electrically insulated from the outside and has a reactive gas inlet 5. In this way, the structure of the upper side could be made simpler than that shown in FIG. 3B, and the occurrence of flakes could be further reduced. There was no change in the film growth rate.
本発明においてはシランを用いた半導体膜の作
製を示した。しかし半導体膜としてSiF4、SiF2と
のPCVD反応によるSi、シランとメタンとの
PCVDによるSixC1-x（０＜ｘ＜１）、シランとゲ
ルマンとによるSixGe1-x（０＜ｘ＜１）、シラン
とアンモニアとの反応によるSixN1-x（０＜ｘ＜
１）を非単結晶半導体として設けることも本発明
は有効である。 In the present invention, the production of a semiconductor film using silane has been described. However, SiF 4 is used as a semiconductor film, Si is produced by PCVD reaction with SiF 2 , and Si is produced by a combination of silane and methane.
SixC 1-x (0<x<1) by PCVD, SixGe 1-x (0<x<1) by silane and germane, SixN 1-x (0<x<1) by reaction of silane and ammonia.
The present invention is also effective if 1) is provided as a non-single crystal semiconductor.
また形成させる被膜として絶縁体である酸化珪
素、炭化珪素を作つてもよい。さらにTMA（Al
（CH3）3）を用いた金属アルミニユーム、TMAと
シランを用いたシリコン添加アルミニユームの如
き導体、またはSnCl4と酸化物気体とを用いた酸
化スズ、InCl3、SnCl4と酸化物気体とを用いた酸
化インジユームスズ等の透光性導電膜を形成して
もよいことはいうまでもない。 Moreover, silicon oxide or silicon carbide, which are insulators, may be used as the film to be formed. In addition, TMA (Al
Conductors such as metallic aluminum using (CH 3 ) 3 ), silicon-doped aluminum using TMA and silane, tin oxide using SnCl 4 and oxide gas, InCl 3 , SnCl 4 and oxide gas It goes without saying that a light-transmitting conductive film made of indium tin oxide or the like used may also be formed.
本発明は以上の如く大面積電極、または電極間
隔を10cm以上離した場合即ち電極間電圧が500V
以上になつてしまう場合特に有効であり、かかる
フローテインググリツドは電圧駆動式のグロー放
電方法を用いたPCVDにおいて特に有効であるも
のと信ずる。 As described above, the present invention is applicable to large-area electrodes or when the electrode spacing is 10 cm or more, that is, when the inter-electrode voltage is 500 V.
We believe that such a floating grid is particularly effective in PCVD using a voltage-driven glow discharge method.
第１図は従来のプラズマCVD法を示す。第２
図は本発明のプラズマCVD装置を示す。第３図
は反応性気体の導入系、排気系を特に示したもの
である。
Figure 1 shows the conventional plasma CVD method. Second
The figure shows a plasma CVD apparatus of the present invention. FIG. 3 particularly shows the reactive gas introduction system and exhaust system.
Claims (1)
と、該反応容器に反応性気体を供給する供給系
と、不要反応生成分またはキヤリアガスを真空排
気する排気系と、前記供給系と排気系との間に被
形成面を有する基板を配設する被膜形成領域とを
具備したプラズマ気相反応装置において、電気エ
ネルギを前記反応性気体に供給をする一対をなす
第１および第２の放電用電極と、該電極の一方ま
たは双方とプラズマ放電の陽光柱内に設けられた
被膜形成領域との間に中間電極を有し、電気的に
いずれの電極とも遊離し、かつ反応性気体を通過
させる空隙を有するグリツドを配設せしめたこと
を特徴とするプラズマ気相反応装置。 ２ 特許請求の範囲第１項において、グリツドは
空隙を有し、かつ電極に概略平行に配設しプラズ
マ放電の陽光柱内に設けられた被膜形成領域に局
部放電が電極近傍より進行することを防止するべ
く設けられたことを特徴とするプラズマ気相反応
装置。[Scope of Claims] 1. A reaction vessel maintained at a reduced pressure of 1 atmosphere or less, a supply system for supplying a reactive gas to the reaction vessel, an exhaust system for evacuating unnecessary reaction products or carrier gas, and In a plasma vapor phase reactor comprising a film forming region in which a substrate having a surface to be formed is disposed between a supply system and an exhaust system, a pair of first and The second discharge electrode has an intermediate electrode between one or both of the electrodes and a film forming region provided in the positive column of plasma discharge, and is electrically free from and reacts with either electrode. 1. A plasma gas phase reactor characterized in that a grid is provided with a gap through which a gas passes. 2. In claim 1, the grid has a gap and is disposed approximately parallel to the electrode so that local discharge progresses from the vicinity of the electrode to a film forming region provided within the positive column of plasma discharge. A plasma gas phase reaction device characterized in that it is provided to prevent
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22937082A JPS59120240A (en) | 1982-12-27 | 1982-12-27 | Plasma gas phase reaction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22937082A JPS59120240A (en) | 1982-12-27 | 1982-12-27 | Plasma gas phase reaction apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59120240A JPS59120240A (en) | 1984-07-11 |
| JPS621535B2 true JPS621535B2 (en) | 1987-01-14 |
Family
ID=16891102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22937082A Granted JPS59120240A (en) | 1982-12-27 | 1982-12-27 | Plasma gas phase reaction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59120240A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2752235B2 (en) * | 1990-06-26 | 1998-05-18 | 株式会社東芝 | Semiconductor substrate manufacturing method |
-
1982
- 1982-12-27 JP JP22937082A patent/JPS59120240A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59120240A (en) | 1984-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0406691B1 (en) | Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same | |
| JP4557400B2 (en) | Method for forming deposited film | |
| JPS6356699B2 (en) | ||
| JPH0512850B2 (en) | ||
| JPH07230960A (en) | Plasma cvd device | |
| JPS621535B2 (en) | ||
| JPH0142125B2 (en) | ||
| JPH0544179B2 (en) | ||
| JPH08195348A (en) | Semiconductor device manufacturing equipment | |
| JP2018019107A (en) | Plasma cvd system, crystal silicon-based solar battery, and plasma cvd method for manufacturing the same | |
| JPH0620038B2 (en) | Plasma gas phase reactor | |
| JP3347383B2 (en) | Microwave plasma processing equipment | |
| JPS63142627A (en) | Manufacture of semiconductor thin film | |
| JP2562686B2 (en) | Plasma processing device | |
| JP2573108B2 (en) | Plasma processing method | |
| JP2649331B2 (en) | Plasma processing method | |
| JPS6151631B2 (en) | ||
| JPH01226148A (en) | Film forming apparatus | |
| JP2670561B2 (en) | Film formation method by plasma vapor phase reaction | |
| JP3069714B2 (en) | Hydrogenated amorphous silicon film deposition system | |
| JPS63274125A (en) | High frequency application electrode structure | |
| JP2573970B2 (en) | Semiconductor thin film manufacturing equipment | |
| JP2649330B2 (en) | Plasma processing method | |
| JPH0522375B2 (en) | ||
| JPS63274127A (en) | Thin film formation |