JPS62151569A - Deposited film forming device - Google Patents

Abstract

PURPOSE:To provide a titled device which economizes energy and permits the easy control of film quality by forming a gaseous raw material release pipe and a release pipe for a gaseous halogen oxidizing agent for said raw material into coaxial cylindrical construction and providing gas release holes to the wall surface of the inside pipe. CONSTITUTION:A deposited film is manufactured by using a film forming device shown in the figure. More specifically gaseous SiH4 101 which is the gaseous raw material is introduced from a gas introducing pipe 109 and gaseous F2 103 which is the gaseous halogen oxidizing agent diluted with gaseous He is introduce from a gas introducing pipe 110, respectively into a low port 111. The pressure in a vacuum vessel 120 is reduced down to a prescribed pressure and a substrate 118 made of quartz glass is used. The above-mentioned two gases are passed in the vessel 120 and an Si:H:F film having the film thickness shown in the table 1 is deposited on the substrate 118. The gas introduced into the space sandwiched by the release part 111, inside pipe 111b and outside pipe 111c is passed through the holes 111a provided to the inside pipe 111b in the gas release part 111 to change the flow toward the central direction of the pipe 111b. The gases 110 are thus uniformly and efficiently mixed to react with each other mainly in the release part 111.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is applicable to functional films, especially electronic devices such as semiconductor devices, photosensitive differentials for electrophotography, and optical input sensor devices for optical image input devices. The present invention relates to a deposited film forming apparatus used to form a functional deposited film useful for device applications.

[Conventional technology]

Conventionally, the functionality of amorphous or polycrystalline films such as semiconductor films, insulating films, photoconductive films, magnetic films, or metal films has been determined by making them individually suitable from the viewpoint of desired physical properties and applications. A membrane method is used.

For example, if necessary, amorphous or polycrystalline non-single crystal silicon (rNON-S i (H
,
) For the formation of silicon deposited films such as (denoted as J) films (it goes without saying that microcrystalline silicon, commonly referred to as microcrystalline silicon, falls within the range of A-5i (H, Deposition method, plasma CVD method, thermal CVD method, reactive sputtering method, ion blating method.

Photo-CVD methods and the like have been tried, and in general, plasma CVD methods are widely used and commercialized.

[Problem that the invention seeks to solve]

However, the reaction process in forming silicon deposited films by the conventionally popular plasma CVD method is considerably more complicated than that of the conventional CVD method, and there are still many unknowns about the reaction mechanism. do not have. In addition, there are many formation parameters for the deposited film (e.g., substrate temperature, flow rate and ratio of introduced gas, pressure during formation, high frequency power, electrode structure, reaction vessel structure, pumping speed, plasma generation method, etc.). Due to the combination of many parameters, the plasma becomes unstable at one time, often having a significant adverse effect on the deposited film formed. Moreover, it is necessary to select device-specific parameters for each device, making it difficult to generalize manufacturing conditions.

On the other hand, in order to develop a silicon deposited film that satisfies electrical and optical properties for each application,
At present, it is considered best to form by plasma CVD method.

However, depending on the application of the silicon deposited film, it is necessary to satisfy the requirements of surface drying, film thickness uniformity, and film quality uniformity in order to achieve reproducible mass production.
Forming a silicon deposited film using the VD method requires a large amount of equipment investment for mass production equipment, and the management items for mass production are complicated, the tolerance range for management is narrow, and equipment adjustments are delicate. , these have been pointed out as problems that should be improved in the future.

Furthermore, in the case of the plasma CVD method, since plasma is directly generated by high frequency waves or microwaves in the film forming space where the substrate to be film is placed, the generated electrons and large number of ions are The seeds damage the film during the film formation process, causing deterioration in film quality and non-uniform film quality.

An indirect plasma CVD method has been proposed as an improvement in this respect.

The indirect plasma CVD method generates plasma using microwaves or the like at an upstream location away from the film-forming space, and transports the plasma to the film-forming space to selectively use chemical species that are effective for film-forming. It was planned to be possible.

However, since the plasma CVD method also requires plasma transport, the lifetime of the chemical species effective for film formation must be long, which naturally limits the species of waste that can be used.
Various deposited films cannot be obtained, a large amount of energy is required to generate plasma, and the generation and production of chemical species effective for film formation cannot be easily controlled. Problems remain.

In contrast to the plasma CVD method, the photo-CVD method uses I & II! during film formation. 2.It is advantageous in that it does not generate ion species or electrons that damage quality, but there are not so many types of light sources, the wavelength of the light source is biased towards ultraviolet, and if it is to become a T industry, it will be large. The light source and its power supply are required, and the window that introduces the light from the light source into the deposition space is covered with a film during deposition, so the amount of light decreases during deposition, and in the end, the light from the light source enters the deposition space. There is a problem that the light will not be incident on the area.

1. As mentioned above, there are still many issues to be solved in the formation of silicon deposited films, and we are trying to save energy with low-cost equipment while maintaining its practical characteristics and uniformity. There is a strong desire to develop a formation method that allows premature birth. These problems can be cited as similar problems to be solved in other functional films, such as silicon nitride films, silicon carbide films, and silicon oxide films.

:Object] The object of the present invention is to solve the above-described method for forming the deposit 19;
(), and at the same time provides a novel deposited film forming apparatus that does not rely on conventional forming methods.

Another object of the present invention is to provide a deposited film forming apparatus that saves energy, allows easy control of film quality, and provides a deposited film with uniform characteristics over a large area.

Still another object of the present invention is to provide a deposited film forming apparatus that is excellent in productivity and mass production, and can easily produce films of high quality and excellent physical properties such as electrical, optical, and semiconductor properties. quarrel.

[Means for solving problems]

The deposited film forming apparatus of the present invention that achieves the above objects includes a gaseous raw material for deposited film formation and a gaseous halogen-based oxidizing agent having the property of oxidizing the raw material in a reaction space. In an apparatus that generates a precursor in an excited state by introducing and chemically contacting the precursor, and forms a deposited film on a substrate in a deposition space by using the precursor as a source of deposited film constituent elements, the deposited film is A gas forming gaseous raw material material discharge tube and a gaseous halogen-based oxidizer discharge tube having the property of oxidizing the raw material material have a coaxial cylindrical structure, and a hole is provided in the wall of the inner tube. It is characterized by having a discharge means.

[Effect]

According to the deposited film forming apparatus of the present invention as described in L, it is possible to save energy, increase the surface area, achieve uniformity of film thickness, and uniformity of film quality, simplify management, and achieve local production. It does not require a large investment in equipment, the management items for the production become clear, the management tolerance is wide, and the adjustment of the equipment becomes easy.

In the deposited film forming apparatus of the present invention, the gaseous raw material for forming the deposited film used is oxidized by chemical contact with the gaseous halogen-based oxidizing agent, and the target deposited film is The material is appropriately selected depending on the type, characteristics, usage, etc. of the material. In the present invention, the gaseous raw material and the gaseous halogen-based oxidizing agent may be those that are made into a gaseous state during chemical contact, and in the normal case,
It can be a gas, liquid, or solid.

When the raw material for forming the deposited film or the halogen-based oxidizing agent is liquid or solid, Ar.

He, N2. A carrier gas such as I2 is used, and bubbling is performed while adding heat if necessary, to introduce a raw material for forming a deposited film and a halogen-based oxidizing agent into the reaction space in gaseous form.

At this time, the partial pressure and mixing ratio of the gaseous raw material and the gaseous halogen-based oxidizing agent can be adjusted by adjusting the flow rate of the carrier gas or the vapor pressure of the raw material for forming the deposited film and the gaseous halogen-based oxidizing agent. Set.

The raw materials for forming the deposited film used in the present invention include, for example, semiconducting or electrical materials.

Insulating silicon VX film and germanium 141M
In order to obtain a deposited film of tetrahedral type such as llI2, linear and branched chain silaf compounds, cyclic silane compounds, chain germanium compounds, etc. can be cited as effective.

Specifically, as a linear silane compound, 5inH2n
+2 (n=1.2,3,4,5゜6.7.8), 5fH3Si
H(SiH3)SiH2SiH3, as a chain germane compound, GemI2m+2 (m=1.2, 3, 4.
5) etc. In addition, for example, if a deposited film of tin is to be created, tin hydride such as 5nHa can be used as an effective raw material.

Of course, other raw materials can be used not only alone, but also in combination of two or more.

The halogen-based oxidizing agent used in the present invention is in a gaseous state when introduced into the reaction space, and is simultaneously introduced into the reaction space through chemical contact with the gaseous raw material for forming a deposited film. It has the property of effectively oxidizing, and F
Effective examples include halogen gases such as 2°Cu2, Br2, and I2, as well as nascent fluorine, chlorine, and bromine.

These halogen-based oxidants are gaseous, and are introduced into the reaction space together with the gas of the raw material for forming the deposited film, given the desired flows J and X and supply pressure, and mixed and collided with the raw material. By doing so, chemical contact is made and the raw material is oxidized to efficiently generate a plurality of types of precursors including excited state precursors. The excited state precursors and other precursors produced serve as a source of components of the deposited film in which at least one of them is formed.

The generated precursor decomposes or reacts to become a precursor in another excited state or a precursor in another excited state, or is deposited in that form, although it releases energy as necessary. By touching the gas surface placed in the space, a deposited film with a three-dimensional network structure is created.

As the energy level is excited, the excited state precursor undergoes an energy transition to a lower energy level. or an activated precursor is formed, preferably at an energy level that accompanies luminescence in the process of changing into another chemical species, including an excited state precursor that accompanies luminescence during such energy transition. As a result, the deposited film forming process of the present invention proceeds more efficiently and with lower energy consumption, and a deposited film that is uniform over the entire surface of the film and has better physical properties is formed.

In the uninvention, the deposited film formation process proceeds smoothly and a film having high quality and desired physical properties is formed. In combination, the mixing ratio, the pressure and flow during mixing, the internal pressure of the film forming space, the gas flow type, and the film forming temperature (substrate temperature and ambient temperature) are appropriately selected as desired.

These film-forming factors are organically related and are not determined independently, but are determined depending on each other in relation to each other.

In the present invention, the ratio of the gaseous raw material for forming the deposited film introduced into the reaction space and the gaseous halogen-based oxidizing agent is determined depending on the relationship with the film-forming factors considered as intermediate among the film-forming factors mentioned above. Although it can be determined as desired, the introduction dipping ratio is preferably 1/100 to 100/1, more preferably 1150 to 50/1.

The pressure at the time of mixing when introduced into the reaction space is preferably higher, but in order to increase the probability of chemical contact between the gaseous raw material and the gaseous halogen-based oxidant, it is better to keep the pressure at least 1 reactivity. It is preferable to determine the optimum value in accordance with 9 as appropriate, taking into account the following.

The pressure at the time of mixing is determined as shown below, but the pressure at the time of each introduction is preferably l x 1
It is desirable that the pressure be 0-7 atm to 10 atm, more preferably 1X10-6 atm to 3 atm.

The pressure in the film forming space, that is, the pressure in the space where the gas to be formed into a film is placed on the surface, is the pressure of the excited state precursor (E) generated in the reaction space and, if necessary, the precursor. The precursor (D) derived from the precursor (E) is appropriately set as desired so as to effectively contribute to film formation.

The internal pressure of the film forming space is determined by the introduction of the Jx body-shaped raw material gaseous halogen-based oxidant into the reaction space when the film space is open and continuous with the reaction space. In relation to pressure and flow, adjustments can be made by adding devices such as using a t price recommendation sign of the type t.

Alternatively, if the conductance of the connection between the reaction space and the film-forming space is small, an appropriate exhaust system may be provided in the film-forming space.
By controlling the exhaust volume of the device, the pressure in the film forming space can be adjusted.

In addition, if the reaction space and film-forming space are integrated and the reaction position and film-forming position are only spatially different, use differential pumping as described above or use a large-scale pump with sufficient exhaust capacity. It is best to install an exhaust system.

As described above, the pressure in the film forming space is determined based on the relationship between the gaseous raw material introduced into the reaction space and the introduction pressure of the gaseous halogen oxidizing agent, but preferably O, 0O
ITorr ~100Torr, more preferably 0.0
1Torr~30Torr, optimally 0.05~
It is desirable to set it to 1OTorr.

Regarding the flow type of the gas, when introducing the raw material for forming the deposited film and the nitrogen-based oxidizing agent into the reaction space, these are uniformly and efficiently mixed, and the precursor (E) is It is necessary to design the gas inlet, the substrate, and the gas outlet in consideration of the geometrical arrangement so that the film can be efficiently generated and properly formed without any trouble. Preferred examples of this geometry are shown in FIGS. 2-4.

The substrate temperature (Ts) during film formation is set as desired depending on the type of gas used, the number of types of deposited film to be formed, and the required characteristics. The temperature is preferably from room temperature to 450°C, more preferably from 50 to 400"C, especially when forming a silicon deposited film with better properties such as semiconductivity and photoconductivity. The substrate temperature (Ts) is 70 to 350.
The temperature is preferably 200-650°C, more preferably 3°C when obtaining a polycrystalline film.
It is desirable that the temperature be 00 to 600°C.

The atmospheric temperature (Tat) in the film-forming space is set so that the precursor (E) and the precursor (D) to be produced do not change into unsuitable chemical species, and the +ij precursor is efficiently (
E) is determined as appropriate depending on ψ in relation to the body temperature (Ts).

The substrate used in the present invention may be electrically conductive or electrically insulating, as long as it is appropriately selected depending on the intended use of the deposited film to be formed. Examples of the conductive substrate include NiCr, steer L/S, Ai, C
r, Mo.

Au, Ir, Nb, Ta, V, Ti, Pt.

Examples include metals such as Pd and alloys thereof.

Polyester is used as the electrically insulating substrate.

Polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride.

Films or sheets of synthetic resins such as polyvinylidene chloride, polystyrene, polyamide, etc., and glass.

Ceramic, paper, etc. are commonly used. Preferably, at least one surface of these electrically insulating substrates is subjected to a conductive treatment, and another layer is preferably provided on the conductive treated surface side.

For example, if it is glass, its surface may be NtCr, Al,
Cr, Mo, Au, Ir, Nb.

Ta, V, Ti, Pt, Pd, In2O3°S no2
．． If conductive treatment is performed by providing a thin film such as ITO (In203+5no2), or a synthetic resin film such as polyester film, NiCr, AIL etc.
, Ag, Pb.

Zn, Ni, Au, Cr, Mo, Ir, Nb.

The surface is treated with a metal such as Ta, V, Tt, or Pt by vacuum evaporation, electron beam irradiation, sputtering, or the like, or laminated with the metal, so that the surface thereof is conductive. The shape of the support may be any shape, such as a cylinder, a belt, or a plate, and the shape of the base is determined as desired, taking into account the adhesion and reactivity between the base and the membrane. It is preferable to choose from among. Furthermore, if the difference in thermal expansion between the two is large, a large amount of distortion will occur during cutting, and a good quality film may not be obtained.

It is preferable to select and use substrates whose thermal expansion differences are close to each other.

In addition, the surface condition of the substrate is directly related to the structure (orientation) of the film and the occurrence of cone-shaped structures, so it is important to treat the surface of the substrate so that it has a film structure and structure that provides the desired properties. is desirable.

FIG. 1 shows an example of the deposited film forming apparatus of the present invention.

The deposited film forming apparatus shown in FIG. 1 is roughly divided into three parts: an apparatus main body, an exhaust system, and a gas supply system.

The apparatus main body is provided with a reaction space and a film forming space.

101 to 105 are cylinders filled with gas used in film formation, 1ota to 105a are gas supply pipes, and 101b to 105b are gas flow rates from each cylinder. control-y-,
101c~105C are gas pressure gauges, 101d~
105d and 101e to 105e are valves, respectively.
1f-105f are pressure gauges that indicate the pressure inside the corresponding gas cylinders.

Reference numeral 120 denotes a vacuum chamber, which has a structure in which a pipe for introducing gas is provided at the upper part and a reaction space is formed downstream of the pipe.
It has a structure in which a film forming space is formed in which a substrate holder 112 is provided such that a substrate holder 18 is installed therein. The gas introduction pipes have a double concentric arrangement structure, with a first gas introduction pipe 109 into which gas from the gas cylinders 101 and 102 is introduced, and a first gas introduction pipe into which gas from gas cylinders 103 to 105 is introduced. It has two gas introduction pipes.

Gas is supplied from a gas cylinder to each introduction pipe through gas supply pipelines 123 to 125, respectively. 1
Reference numeral 11 denotes a gas discharge section connected to gas introduction pipes 109 and 110. Each gas introduction pipe, each gas supply pipeline, and the film forming space 120 are evacuated by a vacuum evacuation device (not shown) via the main vacuum valve 119.

The base body 118 is installed at an appropriate distance from the position of each gas introduction pipe by moving the base body holder 112 up and down.

Reference numeral 113 denotes a substrate heater that heats the substrate 118 to an appropriate temperature during film formation, preheats the substrate 118 before film formation, and further heats the substrate 118 to anneal the film after film formation. be.

The base heater 113 is supplied with power from a power source 115 through a conductive wire 114 .

116 is a thermocouple for measuring the substrate temperature (Ts), and is electrically connected to the temperature display device 117.

FIG. 2 illustrates the gas discharge section 111 in FIG. 1 in more detail. The gas discharge section 111 is connected to the gas introduction section 109. Inner tube 11 with hole 111a
1b and an outer tube 111c.

That is, the gas introduced into the space between the inner tube 111b and the outer tube 111c of the gas discharge part txt through the gas introduction tube 110 passes through the hole 111a provided in the inner tube 1llb and reaches the center of the inner tube 111b. The flow direction is changed toward the gas discharge part 11 through the gas introduction pipe 110.
The gas introduced into the inner tube 111b of No. 1 is mixed uniformly and efficiently mainly within the gas discharge portion itt.

The present invention will be specifically described below with reference to Examples.

[Example 1] A deposited film according to the method of the present invention was produced in the following manner using the film forming apparatus shown in FIG.

The SiH4 gas filled in the cylinder 101 flows%2
From the gas introduction pipe 109 at 0 sec m, cylinder 1
F2 gas diluted to 5% with He gas filled in 03 was introduced into the gas outlet 111 from the gas introduction pipe 110 at a flow rate of 400 seconds.

At this time, the pressure inside the vacuum chamber 120 was adjusted to 800 mTorr by adjusting the opening/closing degree of the vacuum valve 119. A quartz glass (15 cm x 15 cm) was used as the base, and the distance between the gas discharge part 111 and the base was set to 30 cm. As a result, strong bluish-white light emission was observed inside the emission section 111. The substrate temperature (Ts) was set for each sample between room temperature and 400''C as shown in Table 1.

When gas was allowed to flow in this state for 30 minutes, a Si:H:F film having the thickness shown in Table 1 was deposited on the substrate.

Furthermore, the unevenness in film thickness distribution was within ±5%. It was confirmed by electron beam diffraction that the Si:H:FII2 film formed was amorphous in all samples.

A vertical comb-shaped electrode (gap length 200 ALm) was deposited on the amorphous S t :H:F film of each sample to prepare a sample for conductivity measurement. Each sample was placed in a vacuum Taliotat, a voltage of 100 V was applied, and a microcurrent meter (YHP414
0B), the current was constant at 411, and the dark conductivity (σd) was determined. Further, 600 nm and 0.3 mw/cm2 light was irradiated to determine the photoconductivity (σp). Furthermore, the optical band gap (E g 0p') was determined from light absorption. These results are shown in Table 1.

Table 1 [Example 2] Another example of the deposited film forming apparatus of the present invention is shown in which a gas discharge section 31 shown in FIG. 3 is used instead of the gas discharge section shown in FIG. 2.
1 is used. The gas discharge section 311 includes an inner pipe 311a connected to the gas introduction pipe 109, and an inner pipe 311a connected to the gas introduction pipe 109.
0, and a gas discharge direction control section 311C that is in contact with the inner wall of the outer tube 311b and the end of the inner tube 311a. That is, the gas introduced into the space between the outer tube 311b and the inner tube 311a of the gas discharge section 311 through the gas introduction tube 110 is controlled by the gas discharge direction control section 311c to change the flow direction to the inner tube 31.
1a, the gas introduction pipe 109
The gas is uniformly and efficiently mixed with the gas introduced into the inner tube 311a of the gas discharge section 311 through the gas discharge section 311.

When a film was formed using the gas discharge section 311 shown in FIG. 3 under the same conditions as shown in Example 1, the formed Si
:H:F films were confirmed to be amorphous by electron beam diffraction.

AM comb-shaped electrodes (
A gap length of 200 mm) was deposited to prepare a sample for conductivity measurement. Each sample was placed in a vacuum taliostat, a voltage of 100 V was applied, and a microcurrent meter (YHP4140B) was used.
The current was measured and the dark conductivity (σd) was determined. 600 again
The photoconductivity (
σp) was calculated. Furthermore, the optical band gap (E g'Pt) was determined from light absorption. These results are shown in Table 2.

Table 2 [Example 3] Still another example of the deposited film forming apparatus of the present invention is shown.

In the deposited film forming apparatus shown in FIG. 1, a gas discharge section 411 schematically shown in FIG. 4 is used. The gas discharge part jl
l denotes an inner tube 411b connected to the gas introduction tube 109 and having a hole 411a, and an outer tube 41 connected to the gas introduction tube 110.
It consists of 1c. That is, the outer pipe 411c and the inner pipe 411b of the gas discharge section 411 are connected to each other through the gas introduction pipe 110.
The gas introduced into the space between the inner pipe 411 and
The gas is released from the hole 411a provided at the end of the inner tube 411b, and the flow direction is directed toward the central axis of the inner tube 411b.
1, the gas introduction pipe 109
The gas introduced into the inner tube 411b of the gas discharge section 411 through the gas discharge section 411 is mixed uniformly and efficiently mainly in the space outside the gas discharge section 411.

When a film was formed using the gas discharge part 411 shown in FIG. 4 under the same conditions as shown in Example 1, the formed Si
:H:Fll! It was confirmed by electron diffraction that all samples of No. 2 were amorphous.

A comb-shaped electrode (
A gap length of 200 JLm) was deposited.

Conductivity +! A sample for regular use was prepared. Each sample was placed in a vacuum taliostat, a voltage toov was applied, the current was measured with a microcurrent meter (YHP4140B), and the dark conductivity (σd) was determined. Also 600nm, 0.3mw/cm2
was irradiated with light, and the photoconductivity (σp) was determined. Furthermore, the optical band gap (Eg'l) was determined from light absorption. These results are shown in Table 3.

Table 3 Comparative example Next, an A-3i film was deposited using the apparatus shown in FIG.

This device has the same structure as the device shown in FIG. 1 except that the gas discharge section 111 is removed, and is arranged in a coaxial cylindrical shape.

Hereinafter, each number in FIG. 5 and each number in FIG. 1 have the same lower two digits.

The substrate temperature was 200°C, the SiH4 gas flow rate was 20 sec,
F2 gas flow diluted to 5% with He gas @1400sec
Table 4 shows the film thickness, σd, σp, and Egopt values of each sample prepared with various internal pressures.It should be noted that a film forming time of 30 minutes does not allow for a sample with a film thickness that can be considered as a lit value. Because I couldn't do it, I did it for 3 hours each.

Table 4 [Effects] From the detailed explanations and examples below, if the deposited film forming apparatus of the present invention is used, high-speed film formation can be achieved and at the same time, a deposited film with good quality can be obtained. Furthermore, it is possible to easily obtain a film with excellent productivity and mass production, and with high quality and excellent physical properties such as electrical, optical, and semiconductor properties.

[Brief explanation of drawings]

Figure ff41 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. FIG. 2, FIG. 3, and FIG. 4 are schematic diagrams of the gas discharge section. FIG. 5 is a schematic diagram of a film forming apparatus used in a comparative example. 101-105. 501-505---------
----- Gas pump 101a ~ 105a, 501
a ~505a------Gas introduction pipe 101b-
105b, 501b ~ 505b --- Mass flow meter 101cm 105c, 501c ~ 505cm ---
--- Gas pressure gauges 101d-105d and 101e ~ 105e, 501d ~ 505d and 501 e ~ 505 e------------
−−−m−−−−−−−−−−−−−/< )Iy
Bu 101f-105f, 501f-505f----
---------One pressure gauge 109, 110, 509
, 510-------1------ Gas introduction pipe 111, 511---------------
-------------------- Gas discharge part 112
, 512---------------
---------1---- Substrate holder 113, 513
---1---------------1 substrate heating heater + 1 RFi I R-----1-
---------Rusui Agency [Shote Futada-Tatsuki/Scheme 118
, 518-----------1----------
----------------------One base body 11
9, 519----------1----------
--------Vacuum exhaust valve 111a, 411
a---------=-------1------
--------------- One hole l L l b
, 3 L l a , 41 l b------
−−−−−−−−−−−−−=−−−One inner tube 111
c, 31 l b, 411 c------
−−−−−−−−−−−−−−−−−−−Outer tube 311
c---------------
-----Gas release direction control part Jlb Doman 6 diagram

Claims (2)

[Claims] (1) Chemically forming a deposited film by introducing a gaseous raw material for forming a deposited film and a gaseous halogen-based oxidizing agent having the property of oxidizing the raw material into a reaction space. In the apparatus, a gaseous raw material material discharge tube for forming a deposited film and a gaseous halogen-based oxidant discharge tube having the property of oxidizing the raw material material have a coaxial cylindrical structure, and holes are formed on the wall surface of the inner tube. 1. A deposited film forming apparatus characterized by having a gas discharge means that is open. (2) The deposited film forming apparatus according to claim 1, wherein a hole is opened in the wall surface of the end of the inner tube of the gas discharge means having a coaxial cylindrical structure.