JPS6214979A - Method of cleaning vacuum treating chamber - Google Patents
Method of cleaning vacuum treating chamberInfo
- Publication number
- JPS6214979A JPS6214979A JP15467885A JP15467885A JPS6214979A JP S6214979 A JPS6214979 A JP S6214979A JP 15467885 A JP15467885 A JP 15467885A JP 15467885 A JP15467885 A JP 15467885A JP S6214979 A JPS6214979 A JP S6214979A
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- vacuum processing
- cleaning
- dust
- treating chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning In General (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 産業上の利用分野 室 本発明は真空処理９の清掃方法に関する。[Detailed description of the invention] Industrial applications room The present invention relates to a cleaning method for vacuum processing 9.
従来の技術
このため半導体製造で歩留を最も大きく左右するのが、
塵埃の存在であり、これを取９除かなくては歩留の向上
は難しい。半導体製造基プロセスは、ドライエツチング
、成膜など真空中の処理が非常に多く、本発明の利用分
野は大きい。Conventional technology For this reason, the factor that has the greatest influence on yield in semiconductor manufacturing is
There is dust, and it is difficult to improve the yield unless this dust is removed. Many basic semiconductor manufacturing processes involve vacuum processing such as dry etching and film formation, and the present invention has a wide range of applications.
これまで半導体製造装置の真空処理室内の清掃は、人手
による溶剤クリーニング、および酸素プラズマクリーニ
ング等を行なっていた。Up until now, vacuum processing chambers of semiconductor manufacturing equipment have been cleaned manually using solvent cleaning, oxygen plasma cleaning, and the like.
発明が解決しようとする問題点
しかしながら、これらの清掃では除去し切れなかった小
さな塵が処理室内に残留しやすく、確実に清掃すること
が難しかった。さらに近年半導体製造装置は益々複雑化
する傾向にあり、処理室内において人手が屈かない箇所
が増加している。このため、これらの真空処理室を確実
に清掃するために、この対策は重要である。Problems to be Solved by the Invention However, small dust that cannot be removed by these cleaning methods tends to remain in the processing chamber, making it difficult to clean it reliably. Furthermore, in recent years, semiconductor manufacturing equipment has become increasingly complex, and the number of locations in processing chambers that require manual labor is increasing. Therefore, this measure is important in order to reliably clean these vacuum processing chambers.
問題点を解決するための手段
本発明は、上述の問題点を解決するためのものであり、
処理室内を真空排気、ガスパージを短いインターバルで
くり返す真空処理室の清掃方法である。これにより残留
しているごみを確実に除去できる。Means for Solving the Problems The present invention is intended to solve the above problems.
This is a vacuum processing chamber cleaning method in which the processing chamber is evacuated and gas purged repeatedly at short intervals. This ensures that any remaining debris can be removed.
作 用
真空処理室内をドライ窒素や処理ガスでパージを行えば
、残留していたごみが舞い上がる。次の排気でこの舞い
上がったごみを除去し、この操作をくり返すことにより
処理室内が確実に清掃される。Operation If the inside of the vacuum processing chamber is purged with dry nitrogen or processing gas, the remaining dust will be blown up. The next time the exhaust air blows up the dust, and by repeating this operation, the inside of the processing chamber is reliably cleaned.
実施例 以下に本発明の実施例を図面を用いて説明する。Example Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明を適用するウエノ・−処理装置の概要
を示す略断面図であり、図中１が真空処理室である。２
はガス吹き出し口であり、バルブ３を通じパイプ４に接
続されている。パイプ４はドライ窒素や処理ガスである
気体供給源に接続されている。５は排気口でバルブ６を
通じパイプ７に接続されている。パイプ７は真空源に接
続されている。バルブ３を閉じ、バルブ６を開き真空処
理室１の真空排気を行う。次に１０秒後にバルブ３を開
き、バルブ６を閉じ、真空処理室１をドライ窒素や処理
ガス等でパージする。さらに１０秒後パルプ３を閉じ、
バルブ６を開き真空処理室１の排気を行う。この操作を
繰返す。FIG. 1 is a schematic sectional view showing an outline of a urethane processing apparatus to which the present invention is applied, and numeral 1 in the figure is a vacuum processing chamber. 2
is a gas outlet, which is connected to a pipe 4 through a valve 3. The pipe 4 is connected to a gas supply source, such as dry nitrogen or process gas. 5 is an exhaust port connected to a pipe 7 through a valve 6. Pipe 7 is connected to a vacuum source. Valve 3 is closed and valve 6 is opened to evacuate the vacuum processing chamber 1. Next, after 10 seconds, valve 3 is opened, valve 6 is closed, and vacuum processing chamber 1 is purged with dry nitrogen, processing gas, or the like. After another 10 seconds, close the pulp 3,
The valve 6 is opened to evacuate the vacuum processing chamber 1. Repeat this operation.
第２図は、本実施例の効果を残留ダストレベルで示した
特性図である。経験によると、この操作を１０回以上繰
り返し行うことにより、確実に清掃される。FIG. 2 is a characteristic diagram showing the effect of this embodiment in terms of the residual dust level. Experience has shown that by repeating this operation ten or more times, cleaning is ensured.
この操作により、真空処理室内では残留したごみが強制
的にパイプ７より外部へ排出され、確実な清掃が行える
。By this operation, the remaining dust in the vacuum processing chamber is forcibly discharged to the outside through the pipe 7, thereby ensuring reliable cleaning.
発明の効果
以上述べたように本発明によれば、真空処理室内の清掃
を排気、ガスパージのくり返しによりごみを舞い上げ外
部へ排出することにより確実に行うことが出′来る。Effects of the Invention As described above, according to the present invention, the interior of the vacuum processing chamber can be reliably cleaned by repeatedly exhausting and gas purging to lift up dust and discharge it to the outside.
第２図には、本発明を適用し、真空処理内のダストレベ
ルを比較したものである。測定方法は、清掃後の真空処
理室にウェハーを設置し、付着したごみの数をレーザカ
ウンタを用いて測定したものである。第２図を見て明ら
かなように効果は絶大である。FIG. 2 shows a comparison of dust levels during vacuum processing when the present invention is applied. The measurement method was to place a wafer in a vacuum processing chamber after cleaning, and measure the number of attached dust using a laser counter. As is clear from Figure 2, the effect is enormous.
第１図は、本発明の実施で用いた真空処理室の略断面図
、第２図は本発明の効果特性図である。
１・・・・・・真空処理室、２・・・・・・ガス吹き出
し口、３・・・・・・バルブ、４・・・・・・ガス供給
パイプ、５・・・・・・排気口、６・・・・・・バルブ
、７・・・・・・真空源への接続パイプ。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ｔ−
１空処理！
２−ｍ−ケ・ス吠セ田Ｌ′：Ｊ
第２図
■一本処理Ｔδ（
ｎ−一−・・ １８
ｍ−−−・・ ２団
工ＩＩＩ［１FIG. 1 is a schematic sectional view of a vacuum processing chamber used in implementing the present invention, and FIG. 2 is a diagram showing the effects and characteristics of the present invention. 1...Vacuum processing chamber, 2...Gas outlet, 3...Valve, 4...Gas supply pipe, 5...Exhaust Port, 6...Valve, 7...Connection pipe to vacuum source. Name of agent: Patent attorney Toshio Nakao and one other person
1 empty processing! 2-m-ke Suboseda L':J Fig. 2 ■ Single treatment Tδ (n-1-... 18 m--... 2 Group Engineering III [1
Claims (1)
ガスを導入する操作を１回もしくは複数回くり返して処
理室内のごみを除去することを特徴とする真空処理室の
清掃方法。A method for cleaning a vacuum processing chamber of a vacuum processing apparatus, which comprises evacuating the processing chamber of a vacuum processing apparatus and then introducing a gas such as dry nitrogen, which is repeated once or multiple times to remove dust within the processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15467885A JPS6214979A (en) | 1985-07-12 | 1985-07-12 | Method of cleaning vacuum treating chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15467885A JPS6214979A (en) | 1985-07-12 | 1985-07-12 | Method of cleaning vacuum treating chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6214979A true JPS6214979A (en) | 1987-01-23 |
Family
ID=15589518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15467885A Pending JPS6214979A (en) | 1985-07-12 | 1985-07-12 | Method of cleaning vacuum treating chamber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6214979A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03114057U (en) * | 1990-03-08 | 1991-11-22 |
-
1985
- 1985-07-12 JP JP15467885A patent/JPS6214979A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03114057U (en) * | 1990-03-08 | 1991-11-22 |
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