JPS62149184A - Laser reflecting mirror - Google Patents
Laser reflecting mirrorInfo
- Publication number
- JPS62149184A JPS62149184A JP60290274A JP29027485A JPS62149184A JP S62149184 A JPS62149184 A JP S62149184A JP 60290274 A JP60290274 A JP 60290274A JP 29027485 A JP29027485 A JP 29027485A JP S62149184 A JPS62149184 A JP S62149184A
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- total reflection
- laser
- reflection mirror
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0811—Construction or shape of optical resonators or components thereof comprising three or more reflectors incorporating a dispersive element, e.g. a prism for wavelength selection
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Laser Surgery Devices (AREA)
- Radiation-Therapy Devices (AREA)
Abstract
Description
【発明の詳細な説明】
夜五分界
本発明は、レーザ反射鏡、より詳細には、レーザ発生装
置における全反射ミラーの構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a laser reflecting mirror, and more particularly to the structure of a total reflection mirror in a laser generator.
従Ｕ服
第２図は、従来のレーザ発生装置の動作説明をするため
の構成図で、図中、１はレーザ物質からなる光励起部、
２は全反射ミラー、３は部分透過ミラーで、周知のよう
に、光励起部１において、最初、原子は基底状態にある
が、光励起部１に光を当てると、大部分の原子が励起状
態に上り、励起原子が光軸ｘ−Ｘに平行に光子を放出す
るとなだれ現象が生じ、光子は他の原子を誘導して増幅
され、光子が光励起部１の両端間（全反射ミラー２と部
分透過ミラー３の間）を往復しながら前記増幅過程が続
き、増幅が十分に行われた時、前記部分透過ミラー３か
らレーザ光の一部が放出されるものである。Figure 2 is a configuration diagram for explaining the operation of a conventional laser generator, in which 1 is a light excitation section made of a laser material;
2 is a total reflection mirror, and 3 is a partial transmission mirror.As is well known, in the photoexcitation part 1, atoms are initially in the ground state, but when light is applied to the photoexcitation part 1, most of the atoms go into an excited state. When the excited atoms emit photons parallel to the optical axis x-X, an avalanche phenomenon occurs, and the photons induce other atoms and are amplified. The amplification process continues while reciprocating between the mirrors 3), and when the amplification is sufficient, a portion of the laser light is emitted from the partially transmitting mirror 3.
第３図は、上記レーザ物質に、ＹＡＧ （ＹうＡ’ｓＯ
＋ｚ）の組成をもつ結晶からなり、該結晶にＮ ｄ ’
＋イオン（ｎｅｏｄｙｍｉｕｍ ）をドーピングしたＮ
ｄ：ＹＡＧレーザの発振形態を示す図で、周知のように
、１．０６μｍ（止血に有効）の波長のレーザ光は、４
Ｆ ３／２の、励起状態にある原子が４１１１／２の
レベルに落ちる時に発生され、１．３２μｍ （蒸散に
有効）の波長のレーザ光は、４Ｆ３／２の励起状態にあ
る原子が４１１’３／２のレベルに落ちる時に発生され
るものであるが、前記両波長のレーザ光を同時に発生す
るのは無理であり、切り換え発振となる。この場合、前
記反射ミラー２も１．０６μｍ用のものと１．３２μｍ
用のものに切り換えなければならず、非常に不便であっ
た。FIG. 3 shows that YAG (YA'sO) is added to the above laser material.
+z), and the crystal has N d '
N doped with + ions (neodymium)
d: A diagram showing the oscillation form of a YAG laser. As is well known, laser light with a wavelength of 1.06 μm (effective for hemostasis) has a wavelength of 4.
Laser light with a wavelength of 1.32 μm (effective for transpiration) is generated when an atom in an excited state of F 3/2 falls to the level of 4111/2, and an atom in an excited state of 4F 3/2 falls to a level of 411'. This is generated when the laser beam falls to the 3/2 level, but it is impossible to generate laser beams of both wavelengths at the same time, resulting in switching oscillation. In this case, the reflecting mirror 2 is also one for 1.06 μm and one for 1.32 μm.
I had to switch to a new one, which was very inconvenient.
旦−ｍ
本発明は、上述のごとき実情に鑑みてなされたもので、
特に、波長の異なる複数種のレーザ光を切り換えて発振
するレーザ発生装置において、全反射ミラーを前記複数
の波長に対して共通機能し得るようにし、もって、発振
波長の切り換え時、全反射ミラーの切り換えを不要にす
ることを目的としてなされたものである。dan-m The present invention was made in view of the above-mentioned circumstances.
In particular, in a laser generator that switches and oscillates multiple types of laser beams with different wavelengths, the total reflection mirror is made to have a common function for the plurality of wavelengths, so that when switching the oscillation wavelength, the total reflection mirror This was done to eliminate the need for switching.
盪−戒
第１図は、本発明によるレーザ反射鏡の一実施例を説明
するための構成図で、図中、４ａは１．０６μｍのレー
ザ光、４ｂは１．３２μｍのレーザ光、５はプリズム、
６はシャッタで、その化第２図に示したレーザ発生装置
と同様の作用をする部分には第２図の場合と同一の参照
番号が付しである。2) Figure 1 is a configuration diagram for explaining one embodiment of a laser reflecting mirror according to the present invention. In the figure, 4a is a 1.06 μm laser beam, 4b is a 1.32 μm laser beam, and 5 is a 1.32 μm laser beam. prism,
Reference numeral 6 denotes a shutter, and the same reference numerals as in the case of FIG. 2 are given to the parts having the same function as the laser generator shown in FIG.
而して、上記レーザ発生装置において、シャッタ６は図
中に実線にて示す１．０６μｍのレーザ光４ａを遮断す
る位置と、点線にて示す１．３２μｍのレーザ光４ｂを
遮断する位置との間で切り換え可能になっており、図示
実線状態においては、１．３２μｍの波長のレーザ光が
使用可能であり、点線状態においては、１．０６μｍの
レーザ光が使用可能である。In the laser generator described above, the shutter 6 has two positions: a position where it blocks the 1.06 μm laser beam 4a shown by the solid line in the figure, and a position where it blocks the 1.32 μm laser beam 4b shown by the dotted line. In the solid line state shown in the figure, a laser beam with a wavelength of 1.32 μm can be used, and in the dotted line state, a laser beam with a wavelength of 1.06 μm can be used.
而して、上述のように、レーザ発生装置を複数の波長の
異なるレーザ光間で切り換えて使用する場合、全反射ミ
ラーを発生レーザ光の波長に通したものに切り換えて使
用する必要があり、この切り換え構造が複雑であり、又
、レーザ光が漏れた場合に危険であった。本発明は、上
述のような全反射ミラーの切り換えを不要にしたもので
、本発明においては、全反射ミラー２は、第１図に示す
ように、例えば、 １．０６μｍのレーザ光に機能する
ミラー２ａと１．３２μｍのレーザ光に機能するミラー
２ｂとが重ね合わせて構成されており、これによって、
全反射ミラーを切り換えることなく 、１．０６μｍの
レーザ光と１．３２μｍのレーザ光とを切り換えて使用
することができる。なお、以上には、１゜０６μｍのレ
ーザ光と１．３２μｍのレーザ光を切り換えて使用する
場合の実施例について説明したが、本発明は、上記波長
に限定さるものではなく、また、波長の種類も２種類に
限定されるものではなく、３以上の複数の波長間で切り
換えるようにしてもよいことは容易に理解できよう。Therefore, as mentioned above, when using a laser generator by switching between multiple laser beams with different wavelengths, it is necessary to switch the total reflection mirror to one that passes the wavelength of the generated laser beam. This switching structure was complicated, and it was dangerous if laser light leaked. The present invention eliminates the need for switching the total reflection mirror as described above, and in the present invention, the total reflection mirror 2 functions, for example, for a laser beam of 1.06 μm, as shown in FIG. A mirror 2a and a mirror 2b that functions with a 1.32 μm laser beam are stacked one on top of the other.
It is possible to switch between 1.06 μm laser light and 1.32 μm laser light without switching the total reflection mirror. In addition, although the embodiment in which the laser beam of 1°06 μm and the laser beam of 1.32 μm are used by switching has been described above, the present invention is not limited to the above wavelengths, and the present invention is not limited to the above wavelengths. It is easy to understand that the types are not limited to two types, and may be switched between three or more wavelengths.
班−果
以上の説明から明らかなように、本発明によると、簡単
な構成によって、レーザ光発生装置の全反射ミラーを切
り換えることな（、換言すれば、単一の全反射ミラーを
複数の波長間で共通して使用することが可能となり、レ
ーザ光発生装置の構成が簡単となり、また、コストが低
廉化する等の利点がある。Project Results As is clear from the above description, the present invention has a simple configuration that eliminates the need to switch the total reflection mirror of the laser beam generator (in other words, it is possible to switch a single total reflection mirror to multiple wavelengths). This makes it possible to use the laser light generating device in common, simplifying the structure of the laser beam generating device, and reducing costs.
第１図は、本発明によるレーザ反射鏡の使用例を説明す
るための構成図、第２図は、レーザ光発生装置の一例を
説明するための構成図、第３図は、複数の波長のレーザ
光を発生する発振形態を説明するための図である。
１・・・光励起部、２・・・全反射ミラー、 ２ａ、
２ｂ・・・全反射ミラー、３．３ａ、３ｂ・・・部
分透過ミラー。
４ａ、４ｂ・・・レーザ光、５・・・プリズム、６・・
・シャッタ。FIG. 1 is a block diagram for explaining an example of the use of a laser reflecting mirror according to the present invention, FIG. 2 is a block diagram for explaining an example of a laser beam generator, and FIG. FIG. 3 is a diagram for explaining an oscillation form that generates laser light. 1... Light excitation part, 2... Total reflection mirror, 2a,
2b... Total reflection mirror, 3.3a, 3b... Partial transmission mirror. 4a, 4b...Laser light, 5...Prism, 6...
·Shutter.
Claims (2)
た全反射ミラーと、該全反射ミラーに対向して前記光励
起部の他方の側に設けられた部分透過ミラーとを有する
レーザ発生装置において、前記全反射ミラーは異なる波
長に機能する複数層のコーテング層から成ることを特徴
とするレーザ反射鏡。(1) A laser having a light excitation section, a total reflection mirror provided on one side of the light excitation section, and a partially transmission mirror provided on the other side of the light excitation section opposite to the total reflection mirror. In the generator, the total reflection mirror is comprised of a plurality of coating layers that function at different wavelengths.
で構成され、前記全反射ミラーが１．０６μｍ及び１．
３２μｍの波長に機能する２重コーテングであることを
特徴とする特許請求の範囲第（１）項に記載のレーザ反
射鏡。(2) The optical excitation part is composed of a crystal having a composition of Nd:YAG, and the total reflection mirror has a diameter of 1.06 μm and a diameter of 1.0 μm.
The laser reflecting mirror according to claim 1, characterized in that it has a double coating that functions at a wavelength of 32 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60290274A JPS62149184A (en) | 1985-12-23 | 1985-12-23 | Laser reflecting mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60290274A JPS62149184A (en) | 1985-12-23 | 1985-12-23 | Laser reflecting mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62149184A true JPS62149184A (en) | 1987-07-03 |
Family
ID=17754015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60290274A Pending JPS62149184A (en) | 1985-12-23 | 1985-12-23 | Laser reflecting mirror |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62149184A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5131195A (en) * | 1974-09-10 | 1976-03-17 | Nippon Electric Co | TASUNOHACHODEDOJIHATSUSHINKANONAREEZASOCHI |
| JPS5524472A (en) * | 1978-08-11 | 1980-02-21 | Nippon Hoso Kyokai <Nhk> | Argon ion laser |
| JPS57100779A (en) * | 1980-10-23 | 1982-06-23 | Commissariat Energie Atomique | Plural wavelength laser oscillator |
-
1985
- 1985-12-23 JP JP60290274A patent/JPS62149184A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5131195A (en) * | 1974-09-10 | 1976-03-17 | Nippon Electric Co | TASUNOHACHODEDOJIHATSUSHINKANONAREEZASOCHI |
| JPS5524472A (en) * | 1978-08-11 | 1980-02-21 | Nippon Hoso Kyokai <Nhk> | Argon ion laser |
| JPS57100779A (en) * | 1980-10-23 | 1982-06-23 | Commissariat Energie Atomique | Plural wavelength laser oscillator |
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