JPS62145741A - Cmos gate array - Google Patents

Cmos gate array

Info

Publication number
JPS62145741A
JPS62145741A JP60288121A JP28812185A JPS62145741A JP S62145741 A JPS62145741 A JP S62145741A JP 60288121 A JP60288121 A JP 60288121A JP 28812185 A JP28812185 A JP 28812185A JP S62145741 A JPS62145741 A JP S62145741A
Authority
JP
Japan
Prior art keywords
output buffer
input
gate array
terminal
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60288121A
Other languages
Japanese (ja)
Inventor
Kazuharu Nishitani
西谷 一治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60288121A priority Critical patent/JPS62145741A/en
Publication of JPS62145741A publication Critical patent/JPS62145741A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11803Masterslice integrated circuits using field effect technology
    • H01L27/11807CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To enable direct connection of the protective resistance or the parasitic capacity in an input/output buffer region from the internal region for forming a logic circuit by connecting each part used in the input/output buffer region independently to the terminal for connecting signals in a CMOS gate array. CONSTITUTION:Terminals 50-90 for connecting signals are drawn out to near a terminal 1 for connecting external signals and each terminal can arbitrarily be connected from outside. In these operations, the operation when the transistor or the inverter in an input/output buffer region is used for an output buffer or an input buffer is similar to the conventional one. Also, in a gate array, all the input/output buffer regions existing in a chip are rarely used and the unused input/output buffer regions often exist. In the example of connecting the resistance and the capacity in the unused input/output buffer region, an integrating circuit is formed by connecting a resistance 14 and a parasitic capacity 16 to the signal formed in an internal region 2. In this way, various circuits can be formed without adding a specific resistance or capacity.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、セミカスタムICのひとつであるCMOS
ゲートアレイに関するものである。
[Detailed Description of the Invention] [Field of Industrial Application] This invention is applicable to CMOS, which is one of semi-custom ICs.
This relates to gate arrays.

〔従来の技術〕[Conventional technology]

従来、CMOSゲートアレイとしては第3図に示すもの
があった。図において、1は外部信号接続用端子、2は
論理回路形成用の内部領域、3は外部信号接続用端子1
からの入力信号を内部領域2に伝達あるいは逆に内部領
域2の出力信号を外部 。
Conventionally, there has been a CMOS gate array as shown in FIG. In the figure, 1 is a terminal for connecting an external signal, 2 is an internal area for forming a logic circuit, and 3 is a terminal for connecting an external signal 1
The input signal from the internal area 2 is transmitted to the internal area 2, or conversely, the output signal from the internal area 2 is transmitted to the external area.

信号接続用端子1に伝達するための人出力バツファ領域
である。通常、外部信号接続用端子1の端子数と人出力
バツファ領域30人出力バツファ数は1対1に対応して
いる。
This is a human output buffer area for transmitting signals to the signal connection terminal 1. Normally, the number of external signal connection terminals 1 and the number of output buffers in the human output buffer area 30 correspond one to one.

第4図は入出力バッファ領域3内の入出力バッファ回路
の一例を示すものである。図において11は出力バツフ
ァ用Pチャネルのトランジスタ、12は出力バッファ用
Nチャネルのトランジスタであり、そのドレイン同志は
外部信号接続用端子10に接続されており、トランジス
タ11のソース電位は一方の電源(VDD)に接続され
、トランジスタ12のソース電位は他方の電源(V  
)に接続S されている。トランジスタ11及び12のゲート電位は
人出力バツファ回路の用途により接続される信号は異な
る。13は入力用のインバータでありその入力は外部信
号接続用端子10と入力保護用の抵抗14を介して接続
されている。信号接続用端子20,30,40のみ内部
領域2との接続に使われる。
FIG. 4 shows an example of the input/output buffer circuit in the input/output buffer area 3. In the figure, 11 is a P-channel transistor for the output buffer, and 12 is an N-channel transistor for the output buffer. Their drains are connected to the external signal connection terminal 10, and the source potential of the transistor 11 is connected to one power supply ( VDD), and the source potential of the transistor 12 is connected to the other power supply (VDD).
) is connected to S. The signals connected to the gate potentials of transistors 11 and 12 differ depending on the purpose of the human output buffer circuit. Reference numeral 13 denotes an input inverter, the input of which is connected to the external signal connection terminal 10 via a resistor 14 for input protection. Only the signal connection terminals 20, 30, and 40 are used for connection to the internal region 2.

次に動作について説明する。入出力バツファ領域3を出
力バッファとして使用するときには、信号接続用端子2
0.30に必要なゲート電位を与えて動作させ、入力バ
ッファとして使用するときには、信号接続用端子2 Q
 ’(r rHJレベルに、信号接続用端子krLlレ
ベルにし、トランジスタ11.12をオフ状態として外
部信号接続用端子10の信号をインバータ13を介して
内部領域に伝達する。論理回路形成用の内部領域2と入
出力バッファ領域3との接続は信号接続用端子20゜3
0.40の端子でのみ行なわれ、他の人出力バツファ領
域内信号との接続はできない。なお、15゜16はトラ
ンジスタ11.12に付随する寄生容量である。
Next, the operation will be explained. When using the input/output buffer area 3 as an output buffer, the signal connection terminal 2
When operating by applying the necessary gate potential to 0.30 and using it as an input buffer, signal connection terminal 2 Q
'(r rHJ level, signal connection terminal krLl level, transistors 11 and 12 are turned off, and the signal of the external signal connection terminal 10 is transmitted to the internal area via the inverter 13. Internal area for forming a logic circuit The connection between 2 and the input/output buffer area 3 is the signal connection terminal 20°3.
This is done only with the 0.40 terminal, and connection with other signals within the output buffer area is not possible. Note that 15°16 is the parasitic capacitance associated with the transistors 11 and 12.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来のゲートアレイでは以上のように構成されていたた
め、入出力バッファ領域内の抵抗あるいは出力バッファ
ドレイン領域に存在する寄生容量を回路部品として用い
ようとしても、それを論理回路形成用内部領域で構成さ
れる論理回路と直接接続できないので、このような場合
、外部に容量を付加せねばならないという欠点を有して
いた。
Conventional gate arrays are configured as described above, so even if you try to use the resistance in the input/output buffer area or the parasitic capacitance existing in the output buffer drain area as a circuit component, it is difficult to configure it in the internal area for forming the logic circuit. Since it cannot be directly connected to the logic circuit to be used, in such a case, there is a drawback that an external capacitor must be added.

この発明は上記のような問題点を解消するためになされ
たもので、入出力バッファ領域内の保護抵抗あるい1.
t′寄生容量を論理回路形成用内部領域から直接接続で
きるゲートアレイを得ること全目的としている。
This invention was made to solve the above-mentioned problems, and includes protection resistors in the input/output buffer area or 1.
The overall objective is to obtain a gate array in which the t' parasitic capacitance can be directly connected from the internal region for forming a logic circuit.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係るゲートアレイは、入出力バッファ領域内
の各部品を独立に信号接続用端子に接続したものである
In the gate array according to the present invention, each component within the input/output buffer area is independently connected to a signal connection terminal.

〔作 用〕[For production]

信号接続用端子と論理回路形成用内部領域との直接接続
が可能となる。
Direct connection between the signal connection terminal and the internal area for forming a logic circuit becomes possible.

〔発明の実施例〕[Embodiments of the invention]

第1図はこの発明の一実施例を示す回路図でろり、第4
図と同一部分は同記号を用いている。
FIG. 1 is a circuit diagram showing one embodiment of the present invention.
The same symbols are used for parts that are the same as those in the figure.

50.60,70,80,90は信号接続用端子であり
、外部信号接続用端子1付近まで引出されており、それ
ぞれの端子間は外部から任意に接続できるようになって
いる。
50, 60, 70, 80, and 90 are signal connection terminals, which are drawn out to the vicinity of the external signal connection terminal 1, and the respective terminals can be arbitrarily connected from the outside.

次に動作について説明する。入出力バラフナ領域内のト
ランジスタ及びインバータ全出力バッファあるいは入力
バッファとして使用するときの動作は従来例と同様であ
る。ゲートアレイにおいては、チップ内に存在するすべ
ての入出力バッファ領域全使用することはまれであり、
未使用の人出カバツファ領域が存在することが多い。こ
の未使用の人出力バツファ領域内の抵抗及び容量を接続
した例金第2図に示す。図において、内部領域2で形成
された信号に抵抗14及び寄生容量16を接続して積分
回路を形成している。
Next, the operation will be explained. The operation of the transistors and inverters in the input/output buffer area when used as full output buffers or input buffers is the same as in the conventional example. In gate arrays, it is rare to use all the input/output buffer areas within the chip.
There are often unused overcrowded areas. FIG. 2 shows an example in which the resistors and capacitors in this unused output buffer area are connected. In the figure, a resistor 14 and a parasitic capacitor 16 are connected to a signal formed in the internal region 2 to form an integrating circuit.

なお、上記実施例では1種類の抵抗及び寄生容量による
回路を示したがこれらを複数個接続することももちろん
可能であり、種々の回路を構成できる。
In the above embodiment, a circuit using one type of resistor and parasitic capacitance is shown, but it is of course possible to connect a plurality of these, and various circuits can be constructed.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば入出力バッファ領域内
の入力保護抵抗及び寄生容量が論理回路形成用の内部領
域と接続可能となり、特別の抵抗。
As described above, according to the present invention, the input protection resistor and the parasitic capacitance in the input/output buffer area can be connected to the internal area for forming the logic circuit, and the special resistance can be connected to the internal area for forming the logic circuit.

容量を追加することな(、種々の回路が構成できるとい
う効果がある。
This has the effect that various circuits can be configured without adding capacitance.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例を示す回路図、第2図は応
用回路を示す回路図、M3図はCMOSゲートアレイの
構成図、第4図は従来装置の一例を示す回路図である。 1.10・・・・外部信号接続用端子、2・・・・内部
領域、3・・・・入出力バッファ用領域、11.12・
・・・トランジスタ、13・・・・インバータ、14・
・・・抵抗、Is、16・・・・寄生容量、20,30
,40,50,60゜70.80,90・・・・信号接
続用端子。
Fig. 1 is a circuit diagram showing an embodiment of the present invention, Fig. 2 is a circuit diagram showing an applied circuit, Fig. M3 is a configuration diagram of a CMOS gate array, and Fig. 4 is a circuit diagram showing an example of a conventional device. . 1.10...terminal for external signal connection, 2...internal area, 3...area for input/output buffer, 11.12...
...Transistor, 13...Inverter, 14.
... Resistance, Is, 16... Parasitic capacitance, 20,30
,40,50,60°70.80,90...Terminal for signal connection.

Claims (1)

【特許請求の範囲】[Claims] 外部信号接続用端子、論理回路形成用内部領域、外部信
号接続用端子と論理回路形成用内部領域とを接続する入
出力バッファ領域を有するCMOSゲートアレイにおい
て、入出力バッファ領域内に用いられている各部品を独
立に信号接続用端子に接続したことを特徴とするCMO
Sゲートアレイ。
Used in the input/output buffer area in a CMOS gate array that has an external signal connection terminal, an internal area for forming a logic circuit, and an input/output buffer area that connects the external signal connection terminal and the internal area for forming the logic circuit. A CMO characterized by each component being independently connected to a signal connection terminal.
S gate array.
JP60288121A 1985-12-19 1985-12-19 Cmos gate array Pending JPS62145741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60288121A JPS62145741A (en) 1985-12-19 1985-12-19 Cmos gate array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60288121A JPS62145741A (en) 1985-12-19 1985-12-19 Cmos gate array

Publications (1)

Publication Number Publication Date
JPS62145741A true JPS62145741A (en) 1987-06-29

Family

ID=17726075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60288121A Pending JPS62145741A (en) 1985-12-19 1985-12-19 Cmos gate array

Country Status (1)

Country Link
JP (1) JPS62145741A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0779497A3 (en) * 1995-12-15 1998-03-04 Lucent Technologies Inc. Fingerprint acquisition sensor
US6246566B1 (en) 1999-02-08 2001-06-12 Amkor Technology, Inc. Electrostatic discharge protection package and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0779497A3 (en) * 1995-12-15 1998-03-04 Lucent Technologies Inc. Fingerprint acquisition sensor
US6246566B1 (en) 1999-02-08 2001-06-12 Amkor Technology, Inc. Electrostatic discharge protection package and method

Similar Documents

Publication Publication Date Title
JPS62145741A (en) Cmos gate array
JP2749185B2 (en) Composite logic circuit
JPH0439785B2 (en)
JPH06103736B2 (en) Semiconductor device
US20040051575A1 (en) Flip flop, shift register, and operating method thereof
JPH03272167A (en) Semiconductor integrated circuit
JP3111424B2 (en) Signal integration processing circuit
JPH053006B2 (en)
JPS6362412A (en) Logical gate circuit
JP3018351B2 (en) Semiconductor circuit
JP2599396B2 (en) Exclusive logic circuit
JPH03106220A (en) Circuit device for converting signal level
JP2712432B2 (en) Majority logic
KR100822171B1 (en) Data filter for TFT-LCD driver
JPH04277927A (en) Semiconductor integrated circuit
JPH0240948A (en) Semiconductor integrated circuit
JPH03190421A (en) Tri-state buffer circuit
JPS62188419A (en) Mos type semiconductor integrated circuit
JPH04914A (en) Semiconductor integrated circuit device
JPS60101832U (en) Complementary MOS integrated circuit
JPH0330327B2 (en)
JPS61224616A (en) Delay circuit
JPS6249440A (en) Carry generating circuit
JPH0491517A (en) Semiconductor device
JPS6291021A (en) Integrated circuit