JPS62145741A - Cmos gate array - Google Patents
Cmos gate arrayInfo
- Publication number
- JPS62145741A JPS62145741A JP60288121A JP28812185A JPS62145741A JP S62145741 A JPS62145741 A JP S62145741A JP 60288121 A JP60288121 A JP 60288121A JP 28812185 A JP28812185 A JP 28812185A JP S62145741 A JPS62145741 A JP S62145741A
- Authority
- JP
- Japan
- Prior art keywords
- output buffer
- input
- gate array
- terminal
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000872 buffer Substances 0.000 claims abstract description 34
- 230000003071 parasitic effect Effects 0.000 abstract description 9
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、セミカスタムICのひとつであるCMOS
ゲートアレイに関するものである。[Detailed Description of the Invention] [Field of Industrial Application] This invention is applicable to CMOS, which is one of semi-custom ICs.
This relates to gate arrays.
従来、CMOSゲートアレイとしては第3図に示すもの
があった。図において、1は外部信号接続用端子、2は
論理回路形成用の内部領域、3は外部信号接続用端子1
からの入力信号を内部領域2に伝達あるいは逆に内部領
域2の出力信号を外部 。Conventionally, there has been a CMOS gate array as shown in FIG. In the figure, 1 is a terminal for connecting an external signal, 2 is an internal area for forming a logic circuit, and 3 is a terminal for connecting an external signal 1
The input signal from the internal area 2 is transmitted to the internal area 2, or conversely, the output signal from the internal area 2 is transmitted to the external area.
信号接続用端子1に伝達するための人出力バツファ領域
である。通常、外部信号接続用端子1の端子数と人出力
バツファ領域30人出力バツファ数は1対1に対応して
いる。This is a human output buffer area for transmitting signals to the signal connection terminal 1. Normally, the number of external signal connection terminals 1 and the number of output buffers in the human output buffer area 30 correspond one to one.
第4図は入出力バッファ領域3内の入出力バッファ回路
の一例を示すものである。図において11は出力バツフ
ァ用Pチャネルのトランジスタ、12は出力バッファ用
Nチャネルのトランジスタであり、そのドレイン同志は
外部信号接続用端子10に接続されており、トランジス
タ11のソース電位は一方の電源(VDD)に接続され
、トランジスタ12のソース電位は他方の電源(V
)に接続S
されている。トランジスタ11及び12のゲート電位は
人出力バツファ回路の用途により接続される信号は異な
る。13は入力用のインバータでありその入力は外部信
号接続用端子10と入力保護用の抵抗14を介して接続
されている。信号接続用端子20,30,40のみ内部
領域2との接続に使われる。FIG. 4 shows an example of the input/output buffer circuit in the input/output buffer area 3. In the figure, 11 is a P-channel transistor for the output buffer, and 12 is an N-channel transistor for the output buffer. Their drains are connected to the external signal connection terminal 10, and the source potential of the transistor 11 is connected to one power supply ( VDD), and the source potential of the transistor 12 is connected to the other power supply (VDD).
) is connected to S. The signals connected to the gate potentials of transistors 11 and 12 differ depending on the purpose of the human output buffer circuit. Reference numeral 13 denotes an input inverter, the input of which is connected to the external signal connection terminal 10 via a resistor 14 for input protection. Only the signal connection terminals 20, 30, and 40 are used for connection to the internal region 2.
次に動作について説明する。入出力バツファ領域3を出
力バッファとして使用するときには、信号接続用端子2
0.30に必要なゲート電位を与えて動作させ、入力バ
ッファとして使用するときには、信号接続用端子2 Q
’(r rHJレベルに、信号接続用端子krLlレ
ベルにし、トランジスタ11.12をオフ状態として外
部信号接続用端子10の信号をインバータ13を介して
内部領域に伝達する。論理回路形成用の内部領域2と入
出力バッファ領域3との接続は信号接続用端子20゜3
0.40の端子でのみ行なわれ、他の人出力バツファ領
域内信号との接続はできない。なお、15゜16はトラ
ンジスタ11.12に付随する寄生容量である。Next, the operation will be explained. When using the input/output buffer area 3 as an output buffer, the signal connection terminal 2
When operating by applying the necessary gate potential to 0.30 and using it as an input buffer, signal connection terminal 2 Q
'(r rHJ level, signal connection terminal krLl level, transistors 11 and 12 are turned off, and the signal of the external signal connection terminal 10 is transmitted to the internal area via the inverter 13. Internal area for forming a logic circuit The connection between 2 and the input/output buffer area 3 is the signal connection terminal 20°3.
This is done only with the 0.40 terminal, and connection with other signals within the output buffer area is not possible. Note that 15°16 is the parasitic capacitance associated with the transistors 11 and 12.
従来のゲートアレイでは以上のように構成されていたた
め、入出力バッファ領域内の抵抗あるいは出力バッファ
ドレイン領域に存在する寄生容量を回路部品として用い
ようとしても、それを論理回路形成用内部領域で構成さ
れる論理回路と直接接続できないので、このような場合
、外部に容量を付加せねばならないという欠点を有して
いた。Conventional gate arrays are configured as described above, so even if you try to use the resistance in the input/output buffer area or the parasitic capacitance existing in the output buffer drain area as a circuit component, it is difficult to configure it in the internal area for forming the logic circuit. Since it cannot be directly connected to the logic circuit to be used, in such a case, there is a drawback that an external capacitor must be added.
この発明は上記のような問題点を解消するためになされ
たもので、入出力バッファ領域内の保護抵抗あるい1.
t′寄生容量を論理回路形成用内部領域から直接接続で
きるゲートアレイを得ること全目的としている。This invention was made to solve the above-mentioned problems, and includes protection resistors in the input/output buffer area or 1.
The overall objective is to obtain a gate array in which the t' parasitic capacitance can be directly connected from the internal region for forming a logic circuit.
この発明に係るゲートアレイは、入出力バッファ領域内
の各部品を独立に信号接続用端子に接続したものである
。In the gate array according to the present invention, each component within the input/output buffer area is independently connected to a signal connection terminal.
信号接続用端子と論理回路形成用内部領域との直接接続
が可能となる。Direct connection between the signal connection terminal and the internal area for forming a logic circuit becomes possible.
第1図はこの発明の一実施例を示す回路図でろり、第4
図と同一部分は同記号を用いている。FIG. 1 is a circuit diagram showing one embodiment of the present invention.
The same symbols are used for parts that are the same as those in the figure.
50.60,70,80,90は信号接続用端子であり
、外部信号接続用端子1付近まで引出されており、それ
ぞれの端子間は外部から任意に接続できるようになって
いる。50, 60, 70, 80, and 90 are signal connection terminals, which are drawn out to the vicinity of the external signal connection terminal 1, and the respective terminals can be arbitrarily connected from the outside.
次に動作について説明する。入出力バラフナ領域内のト
ランジスタ及びインバータ全出力バッファあるいは入力
バッファとして使用するときの動作は従来例と同様であ
る。ゲートアレイにおいては、チップ内に存在するすべ
ての入出力バッファ領域全使用することはまれであり、
未使用の人出カバツファ領域が存在することが多い。こ
の未使用の人出力バツファ領域内の抵抗及び容量を接続
した例金第2図に示す。図において、内部領域2で形成
された信号に抵抗14及び寄生容量16を接続して積分
回路を形成している。Next, the operation will be explained. The operation of the transistors and inverters in the input/output buffer area when used as full output buffers or input buffers is the same as in the conventional example. In gate arrays, it is rare to use all the input/output buffer areas within the chip.
There are often unused overcrowded areas. FIG. 2 shows an example in which the resistors and capacitors in this unused output buffer area are connected. In the figure, a resistor 14 and a parasitic capacitor 16 are connected to a signal formed in the internal region 2 to form an integrating circuit.
なお、上記実施例では1種類の抵抗及び寄生容量による
回路を示したがこれらを複数個接続することももちろん
可能であり、種々の回路を構成できる。In the above embodiment, a circuit using one type of resistor and parasitic capacitance is shown, but it is of course possible to connect a plurality of these, and various circuits can be constructed.
以上のように、この発明によれば入出力バッファ領域内
の入力保護抵抗及び寄生容量が論理回路形成用の内部領
域と接続可能となり、特別の抵抗。As described above, according to the present invention, the input protection resistor and the parasitic capacitance in the input/output buffer area can be connected to the internal area for forming the logic circuit, and the special resistance can be connected to the internal area for forming the logic circuit.
容量を追加することな(、種々の回路が構成できるとい
う効果がある。This has the effect that various circuits can be configured without adding capacitance.
第1図はこの発明の一実施例を示す回路図、第2図は応
用回路を示す回路図、M3図はCMOSゲートアレイの
構成図、第4図は従来装置の一例を示す回路図である。
1.10・・・・外部信号接続用端子、2・・・・内部
領域、3・・・・入出力バッファ用領域、11.12・
・・・トランジスタ、13・・・・インバータ、14・
・・・抵抗、Is、16・・・・寄生容量、20,30
,40,50,60゜70.80,90・・・・信号接
続用端子。Fig. 1 is a circuit diagram showing an embodiment of the present invention, Fig. 2 is a circuit diagram showing an applied circuit, Fig. M3 is a configuration diagram of a CMOS gate array, and Fig. 4 is a circuit diagram showing an example of a conventional device. . 1.10...terminal for external signal connection, 2...internal area, 3...area for input/output buffer, 11.12...
...Transistor, 13...Inverter, 14.
... Resistance, Is, 16... Parasitic capacitance, 20,30
,40,50,60°70.80,90...Terminal for signal connection.
Claims (1)
号接続用端子と論理回路形成用内部領域とを接続する入
出力バッファ領域を有するCMOSゲートアレイにおい
て、入出力バッファ領域内に用いられている各部品を独
立に信号接続用端子に接続したことを特徴とするCMO
Sゲートアレイ。Used in the input/output buffer area in a CMOS gate array that has an external signal connection terminal, an internal area for forming a logic circuit, and an input/output buffer area that connects the external signal connection terminal and the internal area for forming the logic circuit. A CMO characterized by each component being independently connected to a signal connection terminal.
S gate array.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60288121A JPS62145741A (en) | 1985-12-19 | 1985-12-19 | Cmos gate array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60288121A JPS62145741A (en) | 1985-12-19 | 1985-12-19 | Cmos gate array |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62145741A true JPS62145741A (en) | 1987-06-29 |
Family
ID=17726075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60288121A Pending JPS62145741A (en) | 1985-12-19 | 1985-12-19 | Cmos gate array |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62145741A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0779497A3 (en) * | 1995-12-15 | 1998-03-04 | Lucent Technologies Inc. | Fingerprint acquisition sensor |
US6246566B1 (en) | 1999-02-08 | 2001-06-12 | Amkor Technology, Inc. | Electrostatic discharge protection package and method |
-
1985
- 1985-12-19 JP JP60288121A patent/JPS62145741A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0779497A3 (en) * | 1995-12-15 | 1998-03-04 | Lucent Technologies Inc. | Fingerprint acquisition sensor |
US6246566B1 (en) | 1999-02-08 | 2001-06-12 | Amkor Technology, Inc. | Electrostatic discharge protection package and method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS62145741A (en) | Cmos gate array | |
JP2749185B2 (en) | Composite logic circuit | |
JPH0439785B2 (en) | ||
JPH06103736B2 (en) | Semiconductor device | |
US20040051575A1 (en) | Flip flop, shift register, and operating method thereof | |
JPH03272167A (en) | Semiconductor integrated circuit | |
JP3111424B2 (en) | Signal integration processing circuit | |
JPH053006B2 (en) | ||
JPS6362412A (en) | Logical gate circuit | |
JP3018351B2 (en) | Semiconductor circuit | |
JP2599396B2 (en) | Exclusive logic circuit | |
JPH03106220A (en) | Circuit device for converting signal level | |
JP2712432B2 (en) | Majority logic | |
KR100822171B1 (en) | Data filter for TFT-LCD driver | |
JPH04277927A (en) | Semiconductor integrated circuit | |
JPH0240948A (en) | Semiconductor integrated circuit | |
JPH03190421A (en) | Tri-state buffer circuit | |
JPS62188419A (en) | Mos type semiconductor integrated circuit | |
JPH04914A (en) | Semiconductor integrated circuit device | |
JPS60101832U (en) | Complementary MOS integrated circuit | |
JPH0330327B2 (en) | ||
JPS61224616A (en) | Delay circuit | |
JPS6249440A (en) | Carry generating circuit | |
JPH0491517A (en) | Semiconductor device | |
JPS6291021A (en) | Integrated circuit |