JPS62144891A - Laser beam machine - Google Patents

Abstract

PURPOSE:To make positioning at a high speed with high accuracy by controlling the driving of a stage to bring the part to be processed near to the irradiating position of a laser beam then controlling the driving of a laser beam irradiation system to the part to be processed. CONSTITUTION:A stage driving control part controls the driving of the stage 1 to bring the part PP to be processed near to the irradiating position of the laser beam LB when the part PP to be processed in the prescribed position of the work piece 4 imposed on the stage 1 is apart from the laser beam LB. The driving control part for the laser beam irradiation system 5 controls the driving of the laser beam irradiation system to bring the irradiating position of the laser beam LB successively near to the part PP to be processed when the part PP moves near to the prescribed range near the irradiating position of the laser beam LB. The irradiating position of the laser beam LB is positioned to the part PP in the above-mentioned manner. The part to be processed and the irradiating position of the laser beam are thus positioned at a high speed with high accuracy.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a laser processing device, and is particularly applicable to a laser processing device that processes a workpiece placed on a movable stage using a laser beam. It is.

[Conventional technology]

This type of laser processing equipment is used as semiconductor manufacturing equipment, but in particular, it is used in processing equipment such as wafer repair, which uses a laser beam to re-colour a wafer that has been processed for the purpose of repairing defects on the wafer. , it is required to align the wafer to the laser beam processing position at high speed and with high precision.

However, in conventional laser processing equipment, the method of aligning the workpiece to the laser beam processing position is as follows:
Firstly, a method in which a stage on which a workpiece is placed is moved, and secondly, a method in which the position of a laser beam is moved using an optical system (eg, a galvano mirror) has been adopted.

[Problem that the invention seeks to solve]

The method of moving the first stage has the advantage of being able to align the processing position of the laser beam with high precision, but on the other hand,
There is a problem in that the stage on which the workpiece is placed and the mass of its drive mechanism are quite large, making it impossible to increase the positioning speed very much.

Further, while the method of moving the second laser beam has the advantage of increasing the moving speed, it has the problem that the alignment accuracy for aligning the laser beam to a predetermined processing position on the workpiece cannot be very high.

The present invention has been made in consideration of the above points, and is designed to easily realize positioning with high positioning speed and high precision when positioning a workpiece at the processing position of a laser beam. The purpose of this paper is to propose a laser processing device that uses the following methods.

[Means for solving problems]

In order to solve this problem, in the present invention, the workpiece PP at a predetermined position of the workpiece 4 placed on the stage 1 is
In a laser processing apparatus configured to process the irradiation position by irradiating the processing laser beam LB sent out from a laser beam irradiation system 5 disposed so as to face the stage 1, the above-mentioned workpiece is When the part PP is away from the irradiation position of the processing laser beam LB, a stage drive control unit 53 drives and controls the stage 1 so that the part PP to be processed approaches the irradiation position; When the position approaches a predetermined neighborhood range X, the laser beam irradiation system 5 is controlled to move the irradiation position of the processing laser beam LB closer to the workpiece PP, thereby changing the irradiation position. A laser beam irradiation system drive control section 52 for positioning the part to be processed PP is provided.

[Effect]

When the workpiece PP is away from the irradiation position of the processing laser beam LB, the stage drive control unit 53 moves the stage 1
is driven and controlled to bring the processed portion PP of the workpiece 4 closer to the irradiation position of the processing laser beam LB.

As a result, when the workpiece PP approaches a position close to the irradiation position of the processing laser beam LB, the laser beam irradiation system drive control section 52 drives and controls the laser beam irradiation system 5 to position the irradiation position of the processing laser beam LB. The positioning is performed by bringing the part closer to the part to be processed PP.

With this configuration, when the workpiece PP is far away from the irradiation position of the processing laser beam, the stage 1
By sending the laser beam, the part to be processed can be easily brought close to the irradiation position of the processing laser beam LB with high precision. Then, when the processed part PP comes close to the irradiation position of the processed laser beam LB, the processed part PP is moved by moving the processed laser beam LB.
You can align it above. In this way, since the irradiation position of the processing laser beam LB can be moved within a sufficiently small range, the driving element 22 used for moving the processing laser beam LB has a sufficiently high precision for practical use. In this way, the part to be processed PP and the irradiation position of the processing laser beam LB can be aligned at high speed and with high precision.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a semiconductor manufacturing device will be described in detail below with reference to the drawings.

In FIG. 1, reference numeral 1 denotes a wafer stage mounted on a base 2, which is movable in the X and Y directions by a wafer stage drive motor 3.

A wafer 4 is placed on the top surface of the wafer stage 1 as a workpiece.
is mounted, for example, by vacuum suction, and is configured to receive the processing laser beam LB irradiated from the laser beam irradiation system 5.

The laser beam irradiation system 5 is composed of an objective lens system, and is fixed to a laser beam stage 12 provided above the pedestal 1) installed on the base 2 so as to face the wafer stage 1 with the wafer 4 in between. ing.

The laser beam LBX generated from the processing laser 13 is sent to the laser beam irradiation system 5 as a processing laser beam LB after its power is adjusted in the beam power controller 14 via the mirror 15 and the aperture 16. 5. The laser beam irradiation system 5 emits a processing laser beam L shaped into the opening shape of the aperture 16.
B is imaged onto the wafer 4, and the semiconductor wafer portion at the imaged position is processed.

The laser beam stage 12 holds the laser beam irradiation system 5 movably in the X direction and the Y direction. On the other hand, a laser beam driving device 20 for moving the laser beam irradiation system 5 in the X direction or the Y direction is provided between the laser beam irradiation system 5 and the pedestal 1).

The laser beam driving device 20 has a bearing 21 that is clamped and held on the outer surface of the lens barrel of the laser beam irradiation system 5, for example, as shown in the figure in the X-axis direction, and this bearing 21 It has a configuration in which both ends are held from the outside by a laser beam drive element 22 and a compression spring 23. The laser beam drive element 22 has one end attached to the pedestal 1).
A bearing 21 is pressed onto the laser beam drive element 22 by a compression spring 23, which is made up of, for example, a piezo element and whose one end is fixed to the frame 1).

Thus, when the laser beam drive element 22 expands and contracts against the compression spring 23 in proportion to the supplied voltage, the laser beam irradiation system 5 is moved in the X direction by an amount corresponding to the amount of compression and expansion of the laser beam drive element 22. Ru.

Similarly, in the Y-axis direction, a laser beam driving element 22 and a compression spring 23 are provided, so that the laser beam irradiation system 5 is moved in the Y-axis direction by an amount corresponding to the compression and expansion of the laser beam driving element 22. It is made possible.

In this way, when aligning the predetermined processed portion PP on the wafer 4 with the processing laser beam LB, the wafer stage 1
The first method involves moving the laser beam irradiation system 5 in the X direction and/or the Y direction using the laser beam drive element 22 of the laser beam drive device 20. By using one or both of the above methods, alignment can be performed by changing the relative position of the wafer 4 and the laser beam irradiation system 5.

Here, when the objective lens system constituting the laser beam irradiation system 5 moves a distance X from the position shown by the solid line in FIG. 2 to the position shown by the broken line, the beam position on the wafer 4 is moved by a distance X2. Assuming that it moves, the moving distance X2 of the beam irradiation position is expressed by the following formula % formula % (1). Here, a indicates the distance between the laser beam irradiation system 5 and the wafer 4, and b indicates the distance between the aperture 16 and the laser beam irradiation system 5, respectively.

Incidentally, in practice, the relationship between the distances a and b is selected as b>a (2) so that the cross-sectional size of the processing laser beam LB on the wafer 4 is on the order of several [μm]. There is. For example, the ratio is b: a = 100: 1 −・”
(3), so when the moving amount X2 of the laser beam LB is actually very small, Xz#X+ ......(4)
It can be considered that the amount of movement X2 of the laser beam LB is approximately equal to the amount of movement X1 of the laser beam irradiation system 5, as shown in FIG.

Furthermore, under such conditions, the light beam passing through the objective lens constituting the laser beam irradiation system 5 is considered to mostly pass on the optical axis of the lens, and therefore it can be considered that it does not affect the performance of the lens. .

This relationship holds true for the Y-axis direction as well.

Under such conditions, the irradiation position on the xY plane irradiated by the laser beam irradiation system 5 and the position of the wafer 4 on the XY plane are measured by interferometers 25 and 26, respectively.

The interferometer 25 for the laser beam irradiation system 5 fixes the parallel output beam irradiated from the wavelength-stabilized measurement laser 31 to the outer surface of the laser beam irradiation system 5 by sequentially activating beam splitters 32 and 33. detected mirror 34
The reflected light is received by the beam splitter 33. At the same time, the interferometer 25 transfers the output beam of the measurement laser 31 to the beam splitter 32.3.
3. It is configured so that the light enters a reference mirror 36 provided at a reference position of the pedestal 1) via a mirror 35, and the reflected light is returned to the beam splitter 33 via the mirror 35.

(Then, from the beam splitter 33, the reference mirror 36
An interference beam is obtained by causing interference between the reflected beam reflected from the detection mirror 34 and the reflected beam reflected from the detection mirror 34, and this interference beam is incident on the photoelectric sensor 37. This interference beam is generated based on the difference between the X-direction position of the reference mirror 36 and the X-direction position of the detection mirror 34 and hence the laser beam irradiation system 5. The brightness changes, and in response to this change in brightness, the photoelectric sensor 37 sends out a detection pulse DTI corresponding to the feed amount.

On the other hand, the interferometer 26 for detecting the position of the wafer 4 is
The output beam of the measurement laser 31 is sent to the beam splitter 32.
, enters a detection mirror 43 fixed to the side surface of the wafer stage 1 via a mirror 41 and a beam splitter 42,
The reflected beam is received by a beam splitter 42. At the same time, the output beam of the measurement laser 31 is transferred to the beam splitter 32, the mirror 41, the beam splitter 42, and the mirror 4.
The detection beam is incident on the above-mentioned reference mirror 36 via the mirror 44, and the reflected beam is returned to the beam splitter 42 via the mirror 44.

(Thus, an interference beam is formed in the beam splitter 42 by the reflected beam from the detection mirror 43 and the reflected beam from the reference mirror 36, and a change in the brightness of this interference beam is detected by the photoelectric sensor 45. In this way, the photoelectric sensor 45 has the following values with respect to the reference position of the reference mirror 36:
A detection pulse DT2 corresponding to the detection mirror 43 and therefore the feeding of the wafer 4 is generated at the photoelectric sensor 45.

In this way, from the interferometers 25 and 26, the reference mirror 3
It is possible to obtain detection pulses DTI and DT2 corresponding to the movement amount of the laser beam irradiation system 5 and the movement amount of the wafer 4, respectively, with respect to the reference position where the laser beam irradiation system 6 is provided. By controlling the drive control section of the beam irradiation system 5 and the wafer stage drive control section, the processing portion on the wafer 4 can be aligned with the irradiation position of the processing laser beam LB.

That is, the position of the processing laser beam LB when the laser beam irradiation system 5 is at the origin on the XY plane and the position of the reference mark formed on the wafer 4 on the XY plane are determined in advance by the processing apparatus shown in FIG. Before processing the wafer 4, it is measured in advance using a separate measuring device. In addition, the positional relationship between the processed portion PP on the wafer 4 and the reference mark formed on the wafer 4 is accurately measured in advance as a design value or as a result of measurement. Therefore, since the positional relationship on the XY plane between the processed part PP on the wafer 4 and the processing laser beam LB is known in advance, the distance in the X-axis direction and Y-axis direction corresponding to the positional deviation is set to the target value. The positioning control may be performed by setting the wafer 4 (therefore, the wafer stage 1) and the laser beam irradiation system 5 relatively in the X direction and the Y direction so as to reach this target value.

Such alignment control is performed by a drive control device 5 shown in FIG.
1 is executed. In FIG. 3, only the drive control system in the X direction is shown, but it is assumed that the drive control system in the Y axis direction is similarly configured.

The drive control device 51 includes a laser beam irradiation system drive control section 52 for the laser beam irradiation system 5, a wafer stage drive control section 53 for the wafer stage 1, and a laser drive control section 54 for the processing laser light source 13. .

The wafer stage drive control section 53 receives the detection pulse DT2 obtained from the photoelectric sensor 45 in the counter 55, and inputs the count output X to the subtraction input terminal of the subtraction circuit 56. A target value X0 representing the feed amount in the X-axis direction is input to the addition input terminal of the subtraction circuit 56, and a subtraction output XDI consisting of the difference Xo+=XoXc--(5) is supplied to the comparison circuit 57.

Thus, the subtraction output X1ll obtained from the subtraction circuit 56
As shown in FIG. 4(A), the processing laser beam LB
and the position of the processed part PP on the wafer 4, and this relative difference MDI is calculated at the correction operation start time 1=1. From the value XDl=X o, counter 5
The count output Xc of the counter 55 increases and approaches the target value x0 (accordingly, it becomes smaller), and eventually when the count output Xc of the counter 55 reaches the target value X0, the difference output XDI becomes O and the positioning is performed. Indicates that the operation has ended.

The comparison circuit 57 compares the difference output XDI with the reference signal X, and produces a difference output X. When the content of 1 is greater than the content of the reference signal X, it sends out a comparison output C0M1 that maintains the logic rLJ level, as shown in FIG. 4(B). Here, the reference signal x1 is from a mode in which positioning is performed by sending a wafer stage sheet, that is, a wafer stage feeding mode.
It represents the content of the differential output XDI at the timing of switching to the mode in which positioning is performed by moving the laser beam irradiation system 5, that is, the laser beam irradiation system feeding mode, and as shown in FIG. When the value X approaches and becomes smaller, the comparator circuit 5
The value is selected to invert the logic level of the comparison output C0M1 of No.7.

The comparison output COMI of the comparison circuit 57 is given to the gate circuit 59 via the inverter 58, so that when the comparison output COMI is at the logic "L" level, the gate circuit 59
The differential output MDI is supplied to the motor drive circuit 60 through the gate circuit 59 and the D/A converter 79, thereby continuing to drive the wafer stage drive motor 3 (FIG. 1).

In this state, when the comparison output C0M1 rises to the logic "H" level, the gate circuit 59 is turned off to stop the wafer stage drive motor 3 via the motor drive circuit 60.

Difference output X of subtraction circuit 56. 1 is applied to the addition input terminal of the subtraction circuit 62 through the gate circuit 61 of the laser beam irradiation system drive control section 52.

The laser beam irradiation system drive control section 52 includes a photoelectric sensor 37
The counter 63 counts the detection pulses DTI, and the count output XF is applied to the subtraction input terminal of the subtraction circuit 62.

The subtraction output XD thus obtained at the output of the subtraction circuit 62
Z is provided to the laser beam drive circuit 64 via the D/A converter 80. At this time, the laser beam drive circuit 6
4 sends a drive output DR to the laser beam drive element 22 made of a piezo element, and thus the laser beam irradiation system 5 is controlled until the count output XF of the counter 63 matches the value at the addition input terminal. . Thus, when the difference output XDI of the subtraction circuit 56 reaches the mode switching level xI shown in FIG. 4(A), the target value x0 and the position X of the wafer 4
data of the relative difference remaining between c, i.e., X, o
+ (= 5 will be driven.

In addition to the above configuration, the laser beam irradiation system drive control section 52 inputs the reference position data X of the reference position data generation circuit 71 to the addition input terminal of the subtraction circuit 62. It has a configuration in which R is applied via a gate circuit 72.

The comparison output C0M1 of the comparison circuit 57 is applied to the gate circuit 72 as an open control signal via an inverter 73, so that the gate circuit 72 operates in the opposite direction to that of the gate circuit 61.

Thus, the comparison output C0M1 is logic "L", and therefore the gate
While the gate circuit 61 is closed, the gate circuit 72 is opened and the subtraction circuit 62 receives reference position data X. R is supplied, and as a result, the laser beam drive circuit 64 drives the laser beam drive element 22, thereby changing the irradiation position of the processing laser beam LB to the reference position data X. It is made to follow R. In the case of this embodiment, the reference position data XOI+ is selected to a value that causes the processing laser beam LB to irradiate the origin on the XY plane, and thus the wafer stage 1 is aligned by the wafer stage drive control unit 53. During the laser beam irradiation system drive control section 5
2, the origin is positioned at a position where the processing laser beam LB can irradiate the origin.

The subtraction output XD2 of the subtraction circuit 62 is transmitted to the laser drive control section 5.
4, and when the difference output xnz becomes a value smaller than the reference signal
This is applied to the gate circuit 77 through the gate circuit 76 as an open control signal.

Here, the value of the reference signal x 2 is preselected to a signal level representing the permissible laser irradiation range so that it can be detected that the position of the laser beam LB has entered the permissible range for processing.

The comparison output COMI is given to the gate circuit 76 as an open control signal. Therefore, when the gate circuit 76 is in the operation mode in which the laser beam irradiation system drive control section 52 is performing a control operation, the gate circuit 77 is supplied with the comparison output COMI by the comparison output COM2. It has been made possible to control the

When the gate circuit 77 is in the open state, the trigger output TRG of the laser Q-switch trigger oscillator 78 is supplied to the processing laser 13, and as a result, the processing laser 13 generates a laser beam LBX (Fig. 1) to remove the wafer. 4 is irradiated with a processing laser beam LB.

In the above configuration, at time t0 in FIG. 4, the processing laser beam LB is at the origin O, and the processing point PP of the wafer 4 is at the target value X0. From this state, the wafer stage drive control unit 53 starts the drive control operation. That is, at time t0, when the wafer stage 1 has not yet started operating, the photoelectric sensor 45 has not yet sent out the detection pulse DT2, so the counter 55
The count output X, is 0, so the difference output XDI of the subtraction circuit 56 is the target value X. , and has a larger value than the reference signal X1 of the comparison circuit 57.

Therefore, the comparison output COMI of the comparison circuit 57 is at the logic rLJ level, so the gate circuits 59 and 72 open.
And the gate circuits 61 and 76 are in a closed state.

As a result, the drive output D R1 is sent from the motor drive circuit 6o to the wafer stage drive motor 3.
The processing point PP of the wafer 4 starts moving toward the point where the processing laser beam LB can be irradiated, that is, the origin. Eventually, the photoelectric sensor 45 generates a detection pulse DT2 representing the amount of movement of the processing point PP, and as a result, the count output Xc of the counter 55 increases, resulting in a difference output X1).
1 decreases towards 0.

In this manner, the position of the processed part PP of the wafer 4 approaches the irradiation position of the processing laser beam LB together with the wafer stage 1 (in this operation mode, the subtraction circuit 62 of the laser beam irradiation system drive control section 52 Reference position data X.R is given to the position data generation circuit 71, and the laser beam drive circuit 6 is operated so that the value of the counter 63 matches the origin position represented by the reference position data X.R.
Drive output DR from 4 to the laser beam drive element 22
2 is given, thus maintaining a state in which the processing laser beam LB can irradiate the origin.

Eventually, at time t in FIG. 4(A), when the difference output X□ becomes smaller than the reference signal X, the comparison output COMI of the comparison circuit 57 rises to the logic rHJ level (the fourth
Figure (B)). As a result, gate circuits 59 and 72 are controlled to close, and gate circuits 61 and 76 are controlled to open.

Therefore, the drive output D to the wafer stage drive motor 3
R, is given (so that after time t, wafer 4
The position of the processed part PP is stopped.

Here, the position of the processing point PP does not stop immediately due to the inertia of the wafer stage 1 and its associated drive mechanism, but moves until the inertia is lost and then stops.

On the other hand, the subtraction circuit 62 of the laser beam irradiation system drive control section 52
is the reference position data X. Subtraction circuit 56 instead of R
The state is switched to a state where the difference output xn+ of is given through the gate circuit 61. As a result, the difference output XD2 of the subtraction circuit 62
suddenly changes to a value corresponding to the difference between the irradiation position of the processing laser beam LB (that is, the origin) and the value of the difference output Xl)+ of the subtraction circuit 56, and as a result, the A drive output DR to the laser beam drive element 22 is sent out. Therefore, laser beam LB
The position that can be irradiated is at time 1. It starts moving toward the position of the processed part PP, and the amount of movement is detected by a photoelectric sensor 37.
The value of the differential output XD2 becomes smaller as the count content of the counter 63 becomes larger.

Eventually, at time t2, the difference output XD2 of the subtraction circuit 62
When becomes smaller than the reference signal X2 of the comparison circuit 75, the comparison output C0M2 of the comparison circuit 75 rises to the logic "H" level (FIG. 4(C)). The change in the comparison output CC)M2 is applied to the gate circuit 77 through the gate circuit 76, and by controlling the opening of the gate circuit 77, the processing laser 13 is controlled based on the trigger output TRG of the laser Q trigger oscillator 78.
A drive output DR3 is sent out.

As a result, the processing laser beam LB is irradiated onto the wafer 4. The position of the processing laser beam LB at this time is within the laser irradiation permissible range represented by the reference signal X2, and thus the processing point PP of the wafer 4 is processed by the processing laser beam LB.

Eventually, this processing is completed and at time t3, when the irradiation position of the processing laser beam LB coincides with the processed part PP,
When the difference output XD2 becomes O, the change in the drive output DR2 from the laser beam drive circuit 64 to the laser beam drive element 22 stops, and thus the processing laser beam L
B is maintained aligned with the processing point PP.

In this way, the machining operation for one workpiece PP is completed, and then the value of the target position manual force XO of the wafer stage drive control section 53 is changed to specify the position of the next workpiece PP. At this time, the comparison output COM of the comparison circuit 57
When I changes to the logic rLJ level, the motor drive circuit 60 starts alignment for a new target position, and the laser beam drive circuit 64 enters an operation mode in which the position of the processing laser beam LB is maintained at the origin. enter.

According to the configuration of the embodiment described above, when the difference between the processing point PP and the irradiation position of the processing laser beam LB is large, the wafer stage 1 is driven to move the processing portion PP of the wafer 4 to the processing laser beam LB. The processing laser beam L moves closer to the irradiation position, and as a result, the position of the processed part PP is aligned with the processing laser beam L.
By stopping the driving of the wafer stage 1 and switching to an operation mode in which the processing laser beam LB is moved when the wafer stage 1 approaches the position near point B, the wafer stage can be moved over a long distance. When stopping the wafer stage with a large inertial force, the position of the laser beam LB can be moved using the laser beam driving element 22, which has a relatively fast response speed. It is possible to perform high-speed positioning on the part PP.

(Accordingly, since the driving range of the laser beam driving element 22 can be made sufficiently small, the driving range of the laser beam driving element 22 can be made sufficiently small.
By selecting an element suitable for operating in the narrow range with high precision, the processing laser beam LB can be aligned with the processing point PP with a sufficiently high precision for practical use.

In the above description, the laser beam irradiation system 5 constituting an objective lens is mounted on the laser beam stage 12 as the laser beam driving device 20 for driving the laser beam irradiation system, and the laser beam irradiation system 5 is connected to a piezo element. The X direction and Y direction are controlled by the laser beam driving element 22 consisting of
Although the embodiment has been described in which the processing laser beam is moved in the direction, for example, a galvanometer mirror may be moved by a parallel plate glass (plane parallel) that can rotate once before inputting the processing laser beam to the laser beam irradiation system 5. Even if a laser beam driving device configured to move the laser beam in the X direction and the Y direction is used, the same effect as in the above case can be obtained.

Further, in the above-described embodiment, the wafer stage drive motor 3 is stopped when positioning the laser beam irradiation system 5 to the workpiece PP, but instead of this, the range that the laser beam drive device 20 can follow is While moving the wafer stage 1, the irradiation position of the processing laser beam LB may be aligned with the part to be processed PP, and the processing laser beam B may be irradiated. In this way, a plurality of processed parts PP on the same wafer 4
When machining is performed continuously, there is no wasted time when moving from one workpiece part PP to another workpiece part PP, so even higher-speed alignment can be performed. can.

Further, in the above description, the present invention is applied to a wafer repair machine as a semiconductor manufacturing device, but the present invention is not limited to this, and can be widely applied to general laser processing of a predetermined position on a workpiece. .

〔Effect of the invention〕

As described above, according to the present invention, while the distance between the processing point of the workpiece PP and the processing laser beam is large, the stage on which the workpiece is placed is driven by driving the workpiece point side. The mechanism can be used to align with high precision. At the same time, by driving the laser beam irradiation system when the distance between the workpiece and the processing laser beam becomes sufficiently small, the processing laser beam can be moved at a high speed without the risk of hunting at the position of the workpiece. It can be aligned with As a result, it is possible to obtain a laser beam processing device that can easily realize high-speed and highly accurate positioning.

[Brief explanation of drawings]

FIG. 1 is a vertical cross-sectional view showing the mechanical structure of the laser processing device according to the present invention, and FIG. 2 is a schematic diagram showing the state of movement of the laser beam irradiation position when the laser beam irradiation system is moved.
FIG. 3 is a block diagram showing a drive control device that controls the device shown in FIG. 1, and FIG. 4 is a time chart for explaining the positioning operation. 1...Wafer stage, 2...Base, 3...Wafer stage drive motor, 4...
...Wafer, 5...Laser beam irradiation system, 1
)... Frame, 12... Laser beam stage, 13... Processing laser, 14...
... Beam power control section, 20 ... Laser beam drive device, 21 ... Bearing, 22 ...
... Laser beam drive element, 23 ... Compression spring, 25 ... Interferometer for detecting the position of the laser beam irradiation system, 26 ... Interferometer for detecting the position of the wafer stage, 31...Measurement laser, 51...
Drive control device, 52... Laser beam irradiation system drive control unit, 53... Wafer stage drive control unit, 54... Laser drive control unit.

Claims (4)

[Claims] (1) By irradiating the processed part of the workpiece placed on the stage at a predetermined position with a processing laser beam sent out from a laser beam irradiation system arranged to face the stage. , in the laser processing apparatus configured to process the irradiation position, when the processed part is away from the irradiation position of the processing laser beam, the stage moves the processed part closer to the irradiation position. a stage drive control unit that drives and controls the processing laser beam; and a stage drive control unit configured to move the irradiation position of the processing laser beam closer to the processing target when the processed part approaches the irradiation position to a predetermined vicinity range. A laser processing apparatus comprising: a laser beam irradiation system drive control section that controls the drive of the laser beam irradiation system to align the irradiation position with the part to be processed. (2) The stage drive control section is configured to stop the stage during a control mode in which the laser beam irradiation system drive control device moves the irradiation position. Laser processing equipment. (3) During a control mode in which the irradiation position is moved by the laser beam irradiation system drive control unit, the stage drive control unit continues to drive the stage. laser processing equipment. (4) The amount of movement of the stage is determined by the reflected light from the first detection mirror provided in relation to the stage and the reflected light from a fixed reference mirror provided in common to the stage and the laser beam irradiation system. A first interferometer that receives light detects the amount of movement of the irradiation position of the processing laser beam, and the amount of movement of the irradiation position of the processing laser beam is detected by the reflected light from a second detection mirror provided in connection with the laser beam irradiation system and the reference. The second part receives the reflected light from the mirror.
The position of the stage in the stage drive control section and the position of the processing laser beam in the laser beam irradiation system drive control section are determined based on the detection signals of the first and second interferometers. A laser processing apparatus according to claim 1, which controls the irradiation position.