JPS62143811A - Synthesis of molybdenum or tungsten silicide - Google Patents

Synthesis of molybdenum or tungsten silicide

Info

Publication number
JPS62143811A
JPS62143811A JP28446285A JP28446285A JPS62143811A JP S62143811 A JPS62143811 A JP S62143811A JP 28446285 A JP28446285 A JP 28446285A JP 28446285 A JP28446285 A JP 28446285A JP S62143811 A JPS62143811 A JP S62143811A
Authority
JP
Japan
Prior art keywords
powder
silicide
synthesized
product
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28446285A
Other languages
Japanese (ja)
Other versions
JPH0159209B2 (en
Inventor
Iwao Kyono
京野 巌
Masataka Sugano
菅野 正崇
Ryuichi Nagase
隆一 長瀬
Koji Hosaka
広司 保坂
Akira Kato
晃 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP28446285A priority Critical patent/JPS62143811A/en
Publication of JPS62143811A publication Critical patent/JPS62143811A/en
Publication of JPH0159209B2 publication Critical patent/JPH0159209B2/ja
Granted legal-status Critical Current

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  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:A mixture of high-purity Mo or W powder with high-purity Si powder is combined with synthesized silicide powder, then allowed to react with each other to give the titled silicide which can be readily powdered, because the particles are hardly sintered. CONSTITUTION:An Mo or W powder of high purity is mixed with an Si powder of high purity, preferably at a molar ratio of 1:(2-3.5), further the mixture is combined with a silicide powder which has been synthesized and crushed in an amount of about 2-40wt% based on the mixture. They are thoroughly mixed and heated at about 800-1,400 deg.C in a hydrogen or vacuum atmosphere to give the titled silicide. The addition of the synthesized silicide almost prevents the product from sintering to keep it readily crushable. Thus, the crushing costs are reduced. Moreover, the contamination of the product in the crushing is remarkably decreased to give the product of high quality. Thus, the product is satisfactorily used to make targets for semiconductor devices.

Description

【発明の詳細な説明】 原料シリコン粉末並びに原料モリブデン或いはタングス
テン粉末は高純度のものを使用する。特に、電子工業用
途に用いられるターゲット作製の為には放射性元素、ア
ルカリ金属及び遷移金属含有量の少ないものが望まれる
。高純度のシリコン粉は容易に市販入手しつる。モリブ
デン及びタングステンについても、上記不純物の少ない
高純度のものを調整する技術が確立されており、更に、
この改善についていくつかの方法が提案されている。
DETAILED DESCRIPTION OF THE INVENTION High purity raw material silicon powder and raw molybdenum or tungsten powder are used. In particular, for the production of targets used in the electronic industry, it is desirable to have a low content of radioactive elements, alkali metals, and transition metals. High purity silicon powder is easily available commercially. Regarding molybdenum and tungsten, technology has been established to prepare high-purity products with few impurities, and furthermore,
Several methods have been proposed for this improvement.

こうした、モリブデン或いはタングステン粉とシリコン
粉とをモル比1:2〜五5の配合比で更に既に合成しそ
して粉砕ずみの合成シリサイド粉を上記混合粉量の2〜
40重重%加えて、これらを充分に混合する。混合は例
えばV型ミキサ等を用いて行われる。繰返される合成シ
リサイド粉はシリサイドになる範囲即ちMo (W) 
812.0 w Mo(W) St 3,5のものなら
いずれも使用しつるが、被添加混合粉と同じモル比のも
のが好ましい。なお本発明にいう既に合成し、そして粉
砕ずみの合成シリサイド粉としては先に合成したものを
繰返し使用してもよいし新たに別途合成したものを使用
してもよい。
Such molybdenum or tungsten powder and silicon powder are already synthesized at a molar ratio of 1:2 to 55, and the pulverized synthetic silicide powder is added to the mixture in an amount of 2 to 5 of the above mixed powder amount.
Add 40% by weight and mix these thoroughly. Mixing is performed using, for example, a V-type mixer. Repeated synthetic silicide powder becomes silicide, that is, Mo (W)
812.0 w Mo(W) St 3.5 may be used, but it is preferable to use one having the same molar ratio as the mixed powder to be added. As the already synthesized and pulverized synthetic silicide powder referred to in the present invention, previously synthesized powder may be used repeatedly, or newly synthesized powder may be used.

合成は、水素又は真空雰囲気において800〜1400
°Cに加熱することにより実施される。この場合、触媒
として四塩化ケイ素を用いてもよく、その場合は約95
0℃で合成が可能である。本発明においては合成条件は
特定されない。
Synthesis is performed in hydrogen or vacuum atmosphere at 800 to 1400
It is carried out by heating to °C. In this case, silicon tetrachloride may be used as a catalyst, in which case about 95
Synthesis is possible at 0°C. Synthesis conditions are not specified in the present invention.

合成シリサイド粉の繰返し添加量を多くする程粉砕性の
良好なシリサイドが合成しつる。2%の添加によりすり
つぶしによって粉砕が容易に可能となり、添加効果が認
められる。そのため、本発明では2%を繰返添加量の下
限とした。15%以上の添加によって突崩す程度で容易
に粉となるシリサイドが得られる。しかし、繰返し添加
量をあまり多くすると、合成反応が妨害されまた粉砕効
果も飽和し、そして製造コストを増大する。実験の結果
として、その上限を40%に定めた。
The more the amount of synthetic silicide powder is repeatedly added, the more silicide with good pulverizability will be synthesized. By adding 2%, pulverization can be easily achieved by grinding, and the effect of the addition is observed. Therefore, in the present invention, 2% is set as the lower limit of the amount of repeated addition. By adding 15% or more, silicide can be obtained that easily becomes powder even if it crumbles. However, if the amount of repeated addition is too large, the synthesis reaction will be hindered, the pulverization effect will also be saturated, and the manufacturing cost will increase. As a result of experiments, the upper limit was set at 40%.

こうして粉砕性の良好な合成シリサイドが得られる。参
考までに、爾後工程について簡単に述べると、合成シリ
サイドは、ボールミルその他の粉砕機により粉砕され、
35〜・45メツシユアンダーへの分級を行って合成シ
リサイド粉とされる。
In this way, a synthetic silicide with good pulverizability is obtained. For your reference, to briefly describe the subsequent process, synthetic silicide is pulverized using a ball mill or other pulverizer.
It is classified into 35 to 45 mesh under to produce synthetic silicide powder.

従来、この粉砕段階が困難であり、コスト増及び汚染物
導入を招いていたが、本発明により粉砕工程の負担が激
減する□ この後、粉末はターゲット成形工程に送られ成形及び真
空焼結により或いは加圧焼結によりシリサイド焼結体を
生成し、その後機械加工によって最終ターゲットに仕上
げられる。
Conventionally, this pulverization step was difficult, leading to increased costs and the introduction of contaminants, but the present invention dramatically reduces the burden of the pulverization process □ After this, the powder is sent to the target forming process, where it is compacted and vacuum sintered. Alternatively, a silicide sintered body is produced by pressure sintering and then finished into a final target by machining.

発明の効果 t 粉砕時間が短縮され、粉砕工程のコストが下がり、
それだけ最終製品ターゲットが安価となる。
Effects of the invention t The grinding time is shortened, the cost of the grinding process is reduced,
The final product target becomes cheaper accordingly.

2、 粉砕中の汚染が激減し、高品質を求められる、特
に半4.4体デバイス目的のターゲットを製造可ならし
める。
2. Contamination during crushing is drastically reduced, making it possible to manufacture targets that require high quality, especially for semi-4.4-body devices.

実施例 高純度モリブデン粉と高純度シリコン粉とをモル比1:
2.2で配合し、更に既に合成したシリサイド粉を表1
に示す通り加えて、V型ミキサで混合し、10−”)−
ルの真空雰囲気巾約1250°Cで合成を行った。合成
シリサイド粉を乳鈴にて粉砕し、粉砕の容易性を調べた
。タングステンについても同様に実験した。結果を表1
に示す。
Example High purity molybdenum powder and high purity silicon powder in a molar ratio of 1:
The silicide powders blended in 2.2 and already synthesized are shown in Table 1.
Add as shown and mix in a V-type mixer, 10-”)-
The synthesis was carried out at a vacuum atmosphere width of about 1250°C. Synthetic silicide powder was pulverized in a mortar to examine the ease of pulverization. A similar experiment was conducted with tungsten. Table 1 shows the results.
Shown below.

表  1 ×:粉砕性悪い。Table 1 ×: Poor crushability.

○:粉砕性良好、すりつぶしで粉にしつる。○: Good grindability, can be ground into powder.

◎:粉砕性非常に良好、つきくずしで粉にしうる。◎: Very good grindability, can be ground into powder by pounding.

、・−二′1 代理人の氏名 倉 内 基 弘  1 1−  −′ 同 風間弘志 ゛),・−2′1 Agent's name Motohiro Kurauchi 1 1- -' Same as Hiroshi Kazama゛)

Claims (1)

【特許請求の範囲】[Claims] 1)モリブデン粉或いはタングステン粉とシリコン粉と
の混合粉からモリブデンシリサイド或いはタングステン
シリサイドを合成する方法において、合成ずみのシリサ
イド粉を混合粉に添加することにより、粉砕性の良好な
シリサイドを合成することを特徴とするモリブデン或い
はタングステンシリサイドの合成方法。
1) In a method of synthesizing molybdenum silicide or tungsten silicide from molybdenum powder or a mixed powder of tungsten powder and silicon powder, a silicide with good crushability is synthesized by adding synthesized silicide powder to the mixed powder. A method for synthesizing molybdenum or tungsten silicide, characterized by:
JP28446285A 1985-12-19 1985-12-19 Synthesis of molybdenum or tungsten silicide Granted JPS62143811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28446285A JPS62143811A (en) 1985-12-19 1985-12-19 Synthesis of molybdenum or tungsten silicide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28446285A JPS62143811A (en) 1985-12-19 1985-12-19 Synthesis of molybdenum or tungsten silicide

Publications (2)

Publication Number Publication Date
JPS62143811A true JPS62143811A (en) 1987-06-27
JPH0159209B2 JPH0159209B2 (en) 1989-12-15

Family

ID=17678847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28446285A Granted JPS62143811A (en) 1985-12-19 1985-12-19 Synthesis of molybdenum or tungsten silicide

Country Status (1)

Country Link
JP (1) JPS62143811A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5460793A (en) * 1993-05-07 1995-10-24 Japan Energy Corporation Silicide targets for sputtering and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5460793A (en) * 1993-05-07 1995-10-24 Japan Energy Corporation Silicide targets for sputtering and method of manufacturing the same
US5618397A (en) * 1993-05-07 1997-04-08 Japan Energy Corporation Silicide targets for sputtering

Also Published As

Publication number Publication date
JPH0159209B2 (en) 1989-12-15

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