JPS62126341A - Gas sensor - Google Patents

Gas sensor

Info

Publication number
JPS62126341A
JPS62126341A JP26695085A JP26695085A JPS62126341A JP S62126341 A JPS62126341 A JP S62126341A JP 26695085 A JP26695085 A JP 26695085A JP 26695085 A JP26695085 A JP 26695085A JP S62126341 A JPS62126341 A JP S62126341A
Authority
JP
Japan
Prior art keywords
gas
elements
sensor
catalyst
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26695085A
Other languages
Japanese (ja)
Other versions
JPH07117513B2 (en
Inventor
Takamitsu Noda
臣光 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60266950A priority Critical patent/JPH07117513B2/en
Publication of JPS62126341A publication Critical patent/JPS62126341A/en
Publication of JPH07117513B2 publication Critical patent/JPH07117513B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To obtain a gas sensor having good sensitivity, by applying catalysts different in gas selectivity to elements formed by separating an oxide semiconductor into a plurality of sections. CONSTITUTION:An oxide semiconductor (e.g., stannic oxide SnO2)2 is mounted on one surface of an alumina substrate 1 and a heater 3 for heating elements is mounted on the other surface thereof. The oxide semiconductor 2 is one separated into elements 2a, 2b and an electrode 4 is mounted to the element 2a and an electrode 5 to the element 2b and, further, a common electrode 6 is mounted on the elements 2a, 2b. A catalyst (e.g., Pt-Rh-AlO2)7 is applied to the elements 2a and a catalyst (e.g., W-Cu-AlO2)8 to the element 2b. A sensor element A is formed on the basis of the element 2a and the catalyst 7 and a sensor element B on the basis of the element 2b and the catalyst 8. The sensor element A is low in the sensitivity to alcoholic gas and the sensor element B contrarily has good sensitivity to alcoholic gas. The sensor elements A, B have almost equal sensitivities to gas other than alcoholic gas.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、調理器たとえば電子レンジに用いる//ス
センサに関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a sensor used in a cooking appliance such as a microwave oven.

〔発明の技術的待望とその問題点、〕[Technical long-awaited inventions and their problems]

一般に、調理器たとえば電子レンジにあっては、食品か
ら成敗するガスを検知するガスセンサを備え、このガス
センサの出力によって食品の種類を自動判別し、その食
品の種類に対応する最適な調理を行なうようにしたもの
がある。
In general, cooking devices such as microwave ovens are equipped with a gas sensor that detects gases that are present in food, and the type of food is automatically determined based on the output of this gas sensor, and the cooking method is optimized to suit the type of food. There is something I did.

このような電子レンジにおいては、ガスセンサどしてた
とえばアルコール系のガスに対する選択性(感麿)の良
いものを使用し、食品から成敗するガスがアルコール系
であるか否かを検出することによって食品の種類を判別
するようにしている。
In such microwave ovens, a gas sensor that has good selectivity (sensitivity) for alcohol-based gases is used to detect whether or not the gas that is being absorbed from the food is alcohol-based. I am trying to determine the type of.

しかしながら、ガスセンサがアルコール系のガスだけに
反応するとは言切れないのが実状であり、それ以外のガ
スたとえば一酸化炭素(Go )にも反応することがあ
る。この場合、当然ながら食品の種類判別に誤りを生じ
ることになり、調理の出来具合に悪影響を及ぼしてしま
う。
However, the reality is that it cannot be said that the gas sensor reacts only to alcohol-based gases, and may also react to other gases such as carbon monoxide (Go). In this case, it goes without saying that an error will occur in determining the type of food, which will adversely affect the quality of the cooking.

〔発明の目的〕[Purpose of the invention]

この発明は上記のような事情に鑑みてなされたもので、
その目的とするところは、特定のガスに対してのみ大き
く反応し青る選択性の良好なガスセンサを提供すること
にある。
This invention was made in view of the above circumstances,
The purpose is to provide a gas sensor with good selectivity that reacts strongly only to a specific gas.

〔発明の概要〕[Summary of the invention]

この発明は、酸化物半導体を複数の素子に分離するとと
もに、これら素子にガス選択性の異なる触媒をそれぞれ
塗布し、複数のセンサ素子を形成したしのである。
In this invention, an oxide semiconductor is separated into a plurality of elements, and each of these elements is coated with a catalyst having a different gas selectivity, thereby forming a plurality of sensor elements.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明一実施例について図面を参照して説明す
る。
An embodiment of this invention will be described below with reference to the drawings.

第1図および第2図に示すように、アルミナ基板1の一
方の而に酸化物半導体(たとえば酸化第二スズ5nO2
)2を取付け、かつ他方の而に素子加熱用のヒータ3を
取付ける。上記酸化物半導体2は、全体を二つの素子2
a、 2bに分離したもので、素子2aに電Vi4 、
素子2bに電極5を取付け、さらに素子2a、 2bに
対して共通のコモン電極6を取付ける。そして、素子2
a上に触媒(たとえばPC−Rh−AlO2)7を塗布
し、素子2b上に触媒(たとえばW−C1l −A(l
o2)8を塗イfiする。すなわら、素子2aおよび触
媒7を主体とじてセンサ素子Aを形成し、素子2bおよ
び触IBを主体としてセンサ素子Bを彩成しCいる。
As shown in FIGS. 1 and 2, one side of the alumina substrate 1 is made of an oxide semiconductor (for example, stannic oxide 5nO2).
) 2 and a heater 3 for heating the element on the other side. The oxide semiconductor 2 is divided into two elements 2 as a whole.
It is separated into elements a and 2b, and the voltage Vi4 is applied to element 2a.
An electrode 5 is attached to the element 2b, and a common electrode 6 is attached to the elements 2a and 2b. And element 2
A catalyst (for example, PC-Rh-AlO2) 7 is applied on the element 2b, and a catalyst (for example, W-C1l -A(l
o2) Apply 8. That is, the sensor element A is formed mainly by the element 2a and the catalyst 7, and the sensor element B is formed mainly by the element 2b and the catalyst IB.

そして、このように構成したガスセンサを実際に使用す
る場合、第3図に示ずようなユニット回路を構成する。
When the gas sensor configured as described above is actually used, a unit circuit as shown in FIG. 3 is configured.

センサ素子A(電極4.6間)に抵抗11を介して直流
定電圧Vdを印加するとともに、センυ素子B(電極5
.6間)に抵抗12を介して直流定電圧Vdを印加する
。さらに、ヒータ3に直流電源13を接続する。
A constant DC voltage Vd is applied to sensor element A (between electrodes 4 and 6) via resistor 11, and sensor element B (between electrodes 5 and 6) is applied to sensor element B (between electrodes 5 and 6).
.. 6) through a resistor 12. Furthermore, a DC power source 13 is connected to the heater 3.

そして、センサ素子△および抵抗11の相U接続点3a
に生じる電圧とセンサ索子Bおよび抵抗12の相互接続
点Sbに生じる電圧との差vabを出力とする。
Then, the phase U connection point 3a of the sensor element Δ and the resistor 11
The difference vab between the voltage generated at the sensor cord B and the voltage generated at the interconnection point Sb of the sensor cord B and the resistor 12 is output.

ここで、センサ素子A、Bの特性を第4図に示す。Here, the characteristics of sensor elements A and B are shown in FIG.

センサ素子Aはアルコール系のガスに対して感度が鈍く
、逆にセン)す素子Bはアルコール系のガスに対して!
if1度が良い。また、−酸化炭素等のアルコール系以
外のガスに対してはセンサ索子A。
Sensor element A is less sensitive to alcohol-based gases, and conversely sensor element B is less sensitive to alcohol-based gases!
If 1 degree is good. - Sensor probe A for gases other than alcohol-based gases such as carbon oxide.

Bはほぼ同等の感度をもっている。B has almost the same sensitivity.

したがって、電子レンジで実際に調理を行なつ−でいる
とき、食品からアルコール系のガスが放散すると、セン
サ素子Aの抵抗はほぼ一定であるが、センサ索子Bの抵
抗はガス量の増加に伴って大きく低下する。よって、接
続点5aに生じる電圧と接続点3bに生じる電圧との差
vabは第5図に示すようにガス礪の増加に伴って大き
く上昇する。
Therefore, when alcohol-based gas is dissipated from food during actual cooking in a microwave oven, the resistance of sensor element A remains almost constant, but the resistance of sensor element B increases as the amount of gas increases. This results in a significant decrease. Therefore, the difference vab between the voltage generated at the connection point 5a and the voltage generated at the connection point 3b increases greatly as the gas reservoir increases, as shown in FIG.

一方、食品から一酸化炭素等のアルコール系以外のガス
が放散した場合、センサ素子への抵抗とセンサ素子Bの
低流はほとんど同じとなる。よって、接続点3aに生じ
る電圧と接続点sbに生じる電圧との差Vabは零に近
い値どなる。
On the other hand, when non-alcoholic gases such as carbon monoxide are diffused from food, the resistance to the sensor element and the low flow through sensor element B are almost the same. Therefore, the difference Vab between the voltage generated at the connection point 3a and the voltage generated at the connection point sb takes a value close to zero.

しかして、電子レンジの制陣部は、電圧信号vahのレ
ベルが大きければガスがアルコール系であるど判定し、
その判定結果に基づいて食品の種類を判別する。また、
電圧信号Vabのレベルが零に近りればガスがアルコー
ル系以外のもの′であると判定し、その判定結果に基づ
いて食品の種類を判別する。
Therefore, the control section of the microwave oven determines that the gas is alcohol-based if the level of the voltage signal vah is large.
The type of food is determined based on the determination result. Also,
If the level of the voltage signal Vab approaches zero, it is determined that the gas is not alcohol-based, and the type of food is determined based on the determination result.

このように、特定のガスたとえばアルコール系に対して
のみ大きく反応する選択性の良好なガスセンサを得るこ
とができ、よって電子レンジにおける食品の種類判別が
的確となり、常に良好な出来具合の調理を行なうことが
できる。特に、センサ素子A、Bを一つのパッケージ内
に形成するものであるから、二つのガスセンサを設ける
場合に比べてコストを安くすることができる。しかも、
周囲の温度や湿度の変化に対しては、センサ素子へ、B
が同じように抵抗変化して互いにキレンセルし合うとい
う初点がある。
In this way, it is possible to obtain a gas sensor with good selectivity that responds strongly only to a specific gas, such as alcohol, which allows for accurate discrimination of the type of food in the microwave oven, and for always cooking to a good quality. be able to. In particular, since the sensor elements A and B are formed in one package, the cost can be reduced compared to the case where two gas sensors are provided. Moreover,
In response to changes in ambient temperature and humidity, B
There is an initial point where the resistance changes in the same way and they mutually charge each other.

なお、全体の形状としては上記実施例に限定されるもの
ではなく、たとえば第6図に示づように円筒状のセラミ
ック基板1′を使用して構成してもよい。また、二つの
センサ索子を形成したが、種々の触媒を使用することに
よって三つまたはそれ以−ヒの数のセンサ素子を形成す
るようにしてもよい。さらに、アルコール系のガスに対
するin IR性を良くしたが、触媒の組合わせにより
アルコール系以外のガスに対する選択性を良くすること
も司能である。
It should be noted that the overall shape is not limited to the above embodiment, and may be constructed using a cylindrical ceramic substrate 1', as shown in FIG. 6, for example. Also, although two sensor elements are formed, three or more sensor elements may be formed by using various catalysts. Furthermore, although the in-IR properties for alcohol-based gases have been improved, it is also possible to improve the selectivity for gases other than alcohol-based gases by combining catalysts.

〔発明の効果〕〔Effect of the invention〕

以上述べたようにこの発明によれば、酸化物半導体を復
改の素子に分離するとともに、これら素子にガス選択性
の異なる触媒をそれぞれ塗布し、?VRのセンサ素子を
形成したので、特定のガスに対してのみ大きく反応し得
る選択性の良好なガスセンサを捉洪できる。
As described above, according to the present invention, an oxide semiconductor is separated into reformed elements, and each of these elements is coated with a catalyst having a different gas selectivity. Since a VR sensor element is formed, a gas sensor with good selectivity that can respond strongly only to a specific gas can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施+91の構成を示す図、第2
図は第1図のX−X−線断面を矢印方向に見た図、第3
図は同実施例のユニ71〜回路の構成を示1図、第4図
は同実fi例における各センサ素子の特性を示す図、第
5図は同実施例における出力の状態を示す図、第6図は
同実施例の変形例の構成を示す図である。 1・・・アルミナ基板、2・・・酸化物半導体、3・・
・ヒータ、7.8・・・触媒、A、B・・・センサ素子
。 出願人代理人 弁理士 鈴江武彦 第1図 第2図 第3図
Fig. 1 is a diagram showing the configuration of one embodiment of this invention +91, Fig. 2
The figure is a cross-sectional view taken along the line X-X in Figure 1, viewed in the direction of the arrow;
Figure 1 shows the structure of the unit 71 to the circuit of the same example, Figure 4 shows the characteristics of each sensor element in the same example, and Figure 5 shows the state of the output in the same example. FIG. 6 is a diagram showing the configuration of a modified example of the same embodiment. 1... Alumina substrate, 2... Oxide semiconductor, 3...
- Heater, 7.8... Catalyst, A, B... Sensor element. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3

Claims (3)

【特許請求の範囲】[Claims] (1)酸化物半導体を複数の素子に分離するとともに、
これら素子にガス選択性の異なる触媒をそれぞれ塗布し
、複数のセンサ素子を形成したことを特徴とするガスセ
ンサ。
(1) Separating the oxide semiconductor into multiple elements and
A gas sensor characterized in that a plurality of sensor elements are formed by coating these elements with catalysts having different gas selectivity.
(2)酸化物半導体はSnO_2であることを特徴とす
る特許請求の範囲第1項記載のガスセンサ。
(2) The gas sensor according to claim 1, wherein the oxide semiconductor is SnO_2.
(3)触媒は、白金(Pt)−ロジュウム(Rh)−ア
ルミナ(AlO_2)系のものとタングステン(W)−
銅(Cu)−アルミナ(AlO_2)系のものとの二種
類であることを特徴とする特許請求の範囲第1項または
第2項記載のガスセンサ。
(3) The catalysts are platinum (Pt)-rhodium (Rh)-alumina (AlO_2)-based catalysts and tungsten (W)-based catalysts.
The gas sensor according to claim 1 or 2, characterized in that the gas sensor is of two types: a copper (Cu)-alumina (AlO_2)-based gas sensor.
JP60266950A 1985-11-27 1985-11-27 Gas sensor Expired - Lifetime JPH07117513B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60266950A JPH07117513B2 (en) 1985-11-27 1985-11-27 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60266950A JPH07117513B2 (en) 1985-11-27 1985-11-27 Gas sensor

Publications (2)

Publication Number Publication Date
JPS62126341A true JPS62126341A (en) 1987-06-08
JPH07117513B2 JPH07117513B2 (en) 1995-12-18

Family

ID=17437938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60266950A Expired - Lifetime JPH07117513B2 (en) 1985-11-27 1985-11-27 Gas sensor

Country Status (1)

Country Link
JP (1) JPH07117513B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472046A (en) * 1987-09-02 1989-03-16 Draegerwerk Ag Measuring apparatus for analyzing gas mixture
JPS6486052A (en) * 1987-09-29 1989-03-30 Osaka Gas Co Ltd Gas sensor
JP2007017217A (en) * 2005-07-06 2007-01-25 Fuji Electric Fa Components & Systems Co Ltd Thin film gas sensor
JP2007017426A (en) * 2005-06-06 2007-01-25 National Institute Of Advanced Industrial & Technology Gas sensor for detecting concentration in carbon monoxide and hydrocarbon in atmosphere
WO2022239551A1 (en) * 2021-05-12 2022-11-17 国立研究開発法人産業技術総合研究所 Gas detecting device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138998U (en) * 1974-05-01 1975-11-15
JPS50138997U (en) * 1974-05-01 1975-11-15
JPS5431026U (en) * 1977-08-01 1979-03-01
JPS5938641A (en) * 1982-08-27 1984-03-02 Toshiba Corp Gas detecting element
JPS60149957A (en) * 1984-01-17 1985-08-07 Toshiba Corp Gas sensor
JPS60188368U (en) * 1984-05-23 1985-12-13 新日本無線株式会社 gas detection device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138998U (en) * 1974-05-01 1975-11-15
JPS50138997U (en) * 1974-05-01 1975-11-15
JPS5431026U (en) * 1977-08-01 1979-03-01
JPS5938641A (en) * 1982-08-27 1984-03-02 Toshiba Corp Gas detecting element
JPS60149957A (en) * 1984-01-17 1985-08-07 Toshiba Corp Gas sensor
JPS60188368U (en) * 1984-05-23 1985-12-13 新日本無線株式会社 gas detection device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472046A (en) * 1987-09-02 1989-03-16 Draegerwerk Ag Measuring apparatus for analyzing gas mixture
JPS6486052A (en) * 1987-09-29 1989-03-30 Osaka Gas Co Ltd Gas sensor
JP2007017426A (en) * 2005-06-06 2007-01-25 National Institute Of Advanced Industrial & Technology Gas sensor for detecting concentration in carbon monoxide and hydrocarbon in atmosphere
JP2007017217A (en) * 2005-07-06 2007-01-25 Fuji Electric Fa Components & Systems Co Ltd Thin film gas sensor
WO2022239551A1 (en) * 2021-05-12 2022-11-17 国立研究開発法人産業技術総合研究所 Gas detecting device

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Publication number Publication date
JPH07117513B2 (en) 1995-12-18

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