JPH01313751A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPH01313751A JPH01313751A JP14547988A JP14547988A JPH01313751A JP H01313751 A JPH01313751 A JP H01313751A JP 14547988 A JP14547988 A JP 14547988A JP 14547988 A JP14547988 A JP 14547988A JP H01313751 A JPH01313751 A JP H01313751A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass
- heater
- heat
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 4
- 239000010931 gold Substances 0.000 abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
【発明の利用分野１
この発明は、生産性が高くかつ省電力型の、ガスセンサ
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Application of the Invention 1 This invention relates to a highly productive and power-saving gas sensor.
［従来技術］
省電力型のガスセンサとして、例えば特開昭５９−１４
３，９４６号に記載のものがある。このガスセンサでは
、Ｓｉ基板をアンダーカットエツチングしてＳｉＯ□の
薄い橋を設ける。そしてこの橋の上に、ヒータや電極、
ガス検出用の金属酸化物半導体を設ける。このようなガ
スセンサは極めて消費電力が小さいが、同時に製造が困
難である。またＳｉｎ、の薄い橋は弱く、センサの信頼
性の面からも問題がある。[Prior art] As a power-saving gas sensor, for example, Japanese Patent Application Laid-Open No. 59-14
There is one described in No. 3,946. In this gas sensor, a thin bridge of SiO□ is provided by undercut etching the Si substrate. And on this bridge, there are heaters, electrodes, etc.
A metal oxide semiconductor for gas detection is provided. Although such gas sensors have extremely low power consumption, they are also difficult to manufacture. Furthermore, the thin bridge of Sin is weak, which poses a problem in terms of sensor reliability.
［発明の課題］
この発明は、構造が単純でかつ消費電力の小さなガスセ
ンサを目的とする。[Problems to be solved by the invention] The object of the present invention is to provide a gas sensor with a simple structure and low power consumption.
（発明の構成］
この発明のガスセンサは、耐熱絶縁性基板上に、ガス検
出用の金属酸化物半導体膜と、半導体装置接続した電極
膜と、ヒータ膜とを有するセンサ本体を設けたガスセン
サにおいて、センサ本体と基板との間に断熱用のガラス
膜を設けたことを特徴とする。(Structure of the Invention) A gas sensor of the present invention includes a sensor main body having a metal oxide semiconductor film for gas detection, an electrode film connected to a semiconductor device, and a heater film on a heat-resistant insulating substrate. A feature is that a glass film for heat insulation is provided between the sensor body and the substrate.
ガラスの熱伝導率は一般に小さく、アルミナ等のセラミ
ック材料のｌ／２０程度である。そこで耐熱絶縁性基板
とセンサ本体との間にガラス膜を置いて断熱すれば、セ
ンサの消費電力を著しく小さくできる。この膜は可能な
限り厚くし、例えば３０〜１００μｍ程度のものを用い
る。The thermal conductivity of glass is generally low, about 1/20 that of ceramic materials such as alumina. Therefore, if a glass film is placed between the heat-resistant insulating substrate and the sensor body to provide insulation, the power consumption of the sensor can be significantly reduced. This film is made as thick as possible, for example, about 30 to 100 μm.
ヒータ膜の材料は、一般にはガス検出用の金属酸化物半
導体膜を被毒する成分を含んでいる。そこで好ましくは
、絶縁膜によりヒータ膜と金属酸化物半導体膜とを分離
する。この絶縁膜には任意のものを用い得るが、例えば
膜形成の容易なガラス膜や、ガラスとセラミックの混合
膜を用いる。The material of the heater film generally contains a component that poisons the metal oxide semiconductor film for gas detection. Therefore, preferably, the heater film and the metal oxide semiconductor film are separated by an insulating film. Although any material can be used for this insulating film, for example, a glass film that is easy to form or a mixed film of glass and ceramic is used.
絶縁膜は例えば膜厚２〜２０μｍ程度と薄くすることが
好ましく、かつ熱伝導率の高い材料を用いることが好ま
しい。ガラスの熱伝導率は材質を変えても余り変化しな
いので、ガラスにアルミナやシリカ等のセラミック粒子
を混合し、熱伝導率を高めたものが好ましい。The insulating film is preferably made as thin as, for example, about 2 to 20 μm, and is preferably made of a material with high thermal conductivity. Since the thermal conductivity of glass does not change much even if the material is changed, it is preferable to mix ceramic particles such as alumina or silica with glass to increase the thermal conductivity.
〔実施例］
第」図〜第４図に実施例を示す。第」図において、２は
アルミナを用いた耐熱絶縁性基板で、ムライト、スピネ
ル、窒化ケイ素等を用いても良い。[Example] Examples are shown in Figures 1 to 4. In Figure 1, 2 is a heat-resistant insulating substrate made of alumina, and mullite, spinel, silicon nitride, etc. may also be used.
４は断熱用のガラス膜で、実施例では膜厚４０μｍのア
ンダーコート用ガラス（酸化ルテニウムヒータ用）を用
いた。６は酸化ルテニウム等のヒータ膜で、膜厚は約ｌ
Ｏμｍである。８は、ヒータ膜６に接続した一対の金電
極で、熱伝導を抑制するため膜厚０．５μｍの蒸着膜を
用いた。ＩＯは絶縁膜で、例えば膜厚ｌＯμｍ程度のガ
ラス膜や、これにアルミナやシリカ等の絶縁性セラミッ
ク粒子を混合して熱伝導率を高めたものを用いる。セラ
ミックとガラスとでは、一般に熱伝導率に大差が有り、
ガラスの熱伝導率はセラミックよりはるかに低い。そこ
で断熱用のガラス膜４を用いることにより、ヒータ６か
ら基板２への伝熱を抑制できる。Ｉ２はＰｔやＡｕ等の
電極膜で、検出電極として用いる。電極膜１２は膜厚０
，５μｍの金の蒸着膜を用いた。１４はＳｎＯ，やＴ１
０３、Ｆｅ２Ｏ３、Ｉｎ、Ｏ，等の金属酸化物半導体の
膜で、ガスにより抵抗値が変化するものを用いる。金属
酸化物半導体膜１４は、蒸着等の薄膜や、厚さが例えば
１０〜２０μｍ程度の印刷膜等を、用いる。4 is a glass film for heat insulation, and in the example, an undercoat glass (for a ruthenium oxide heater) with a film thickness of 40 μm was used. 6 is a heater film made of ruthenium oxide, etc., and the film thickness is about l.
It is Oμm. Reference numeral 8 denotes a pair of gold electrodes connected to the heater film 6, and a vapor-deposited film having a thickness of 0.5 μm was used to suppress heat conduction. IO is an insulating film, such as a glass film with a thickness of about 10 μm, or a film mixed with insulating ceramic particles such as alumina or silica to increase thermal conductivity. There is generally a large difference in thermal conductivity between ceramic and glass.
The thermal conductivity of glass is much lower than that of ceramic. Therefore, by using the glass film 4 for heat insulation, heat transfer from the heater 6 to the substrate 2 can be suppressed. I2 is an electrode film made of Pt, Au, etc., and is used as a detection electrode. The electrode film 12 has a film thickness of 0
, a 5 μm gold vapor-deposited film was used. 14 is SnO, or T1
A film of a metal oxide semiconductor such as 03, Fe2O3, In, O, etc., whose resistance value changes depending on the gas, is used. As the metal oxide semiconductor film 14, a thin film formed by vapor deposition or a printed film having a thickness of, for example, about 10 to 20 μm is used.
検出電極１２やヒータ電極８を断熱膜４の外部まで引き
出し、外部電極２０に接続する。外部電極２０は膜状と
し、材料には例えば安価なＡｇやＡｇ−Ｐｄ等を用いる
。外部電極２０にＡｇ−Ｐｄ等を用いると、材料中のＡ
ｇのマイグレーションが問題となる。そこで外部電極２
０の露出部を適宜のガラス膜で被覆し、マイグレーショ
ンを防止するのが好ましい。２２は外部リードで、Ｆ型
リードを用いた。この外部リード２２は最初多数結合さ
れてリードフレーム状をなし、外部電極２０への接続後
に分断して外部リードとなる。この外部リード２２は上
部が３つ又に別れており、その内の２片を用いて、例え
ば外部電極２０にハンダ付けする。残る１片で基板２の
裏面を挟みこみ、外部リード２２を基板２に結合する。The detection electrode 12 and heater electrode 8 are drawn out to the outside of the heat insulating film 4 and connected to the external electrode 20. The external electrode 20 is in the form of a film, and is made of inexpensive material such as Ag or Ag-Pd. When Ag-Pd or the like is used for the external electrode 20, A in the material
Migration of g becomes a problem. Therefore, external electrode 2
It is preferable to cover the exposed portion of 0 with a suitable glass film to prevent migration. 22 is an external lead, and an F-type lead is used. The external leads 22 are first connected in large numbers to form a lead frame shape, and after being connected to the external electrodes 20 are separated to form external leads. This external lead 22 is divided into three parts at the upper part, and two of the parts are soldered to the external electrode 20, for example. The remaining one piece is used to sandwich the back surface of the substrate 2 and connect the external leads 22 to the substrate 2.
第２図、第３図に、センサの本体部を拡大して示す。FIGS. 2 and 3 show enlarged views of the main body of the sensor.
第４図にセンサの全体構造を示す。２は前記の基板で、
ベースに兼用する。なお２４はセンサ本体で、前記のヒ
ータ膜６、絶縁膜ｌＯ１電極膜１２、金属酸化物半導体
膜１４等を意味する。２６は合成樹脂等のカバーで、２
８はカバー２６の通気口に設けた防爆用の金網である。Figure 4 shows the overall structure of the sensor. 2 is the aforementioned board,
Also serves as a base. Note that 24 is a sensor body, which means the heater film 6, the insulating film 1O1 electrode film 12, the metal oxide semiconductor film 14, etc. 26 is a cover made of synthetic resin, etc.
Reference numeral 8 denotes an explosion-proof wire mesh provided at the vent of the cover 26.
なお引火の起こり易さは、発熱部の温度だけでなく、発
熱部の面積にも関係する。そして発熱部の面積を小さく
すると、引火は起こらなくなる。実施例の場合、ヒータ
膜６等の面積は極く小さく、引火は元々起こりにくい。The ease of ignition is related not only to the temperature of the heat generating part but also to the area of the heat generating part. If the area of the heat generating part is reduced, ignition will no longer occur. In the case of the embodiment, the area of the heater membrane 6 and the like is extremely small, and ignition is inherently difficult to occur.
そこで防爆用金網２８は、設けなくても良い。Therefore, the explosion-proof wire mesh 28 may not be provided.
実施例のガスセンサを特開昭５９−１４３，９４６号の
センサと比較する。センサ本体はいずれも印刷等により
形成されるから、センサ本体の微細化の程度は同等であ
る。特開昭５９−１４３゜９４６号のセンサでは、セン
サ本体は基板から分離され消費電力を抑止している。こ
れに対して実施例では、熱伝導率の低いガラス膜４によ
り断熱している。The gas sensor of this example will be compared with the sensor disclosed in Japanese Patent Application Laid-open No. 143,946/1983. Since both sensor bodies are formed by printing or the like, the degree of miniaturization of the sensor bodies is the same. In the sensor disclosed in Japanese Patent Application Laid-Open No. 59-143°946, the sensor body is separated from the substrate to reduce power consumption. On the other hand, in the embodiment, the glass film 4 having low thermal conductivity is used for heat insulation.
第５図に、消費電力の節減に適した付帯回路の例を示す
。図において、３０は適宜の電源、６は前記のヒータ、
１４はＳｎＯ２等の金属酸化物半導体膜、３２は半導体
膜の負荷抵抗である。３４はタイマで、例えば１−１０
秒に１回、幅１ｍｓｅｃ＝ｌｏｍｓｅｃ程度のヒータ加
熱信号を発する。３６はこの信号でオンするスイッチ、
３８はサンプルホールド回路、４０は演算回路でその出
力をガスの検出信号として用いる。FIG. 5 shows an example of an auxiliary circuit suitable for reducing power consumption. In the figure, 30 is an appropriate power source, 6 is the aforementioned heater,
14 is a metal oxide semiconductor film such as SnO2, and 32 is a load resistance of the semiconductor film. 34 is a timer, for example 1-10
A heater heating signal with a width of about 1 msec=lomsec is generated once every second. 36 is a switch that is turned on by this signal,
38 is a sample hold circuit, and 40 is an arithmetic circuit whose output is used as a gas detection signal.
第６図により、装置の動作を説明する。ヒータ加熱信号
により、センナは間欠的に加熱される。The operation of the device will be explained with reference to FIG. The senna is intermittently heated by the heater heating signal.
これに対してセンサの出力Ｖ（負荷抵抗３２への出力）
は、図の実線や破線のような応答を示す。In contrast, the sensor output V (output to the load resistor 32)
indicates responses as shown in the solid and dashed lines in the figure.
そこでこの応答からガスを検出する。例えば信号Ｓ、、
Ｓ、の時点で出力をサンプリングし、これらの値からガ
スの種類を弁別し、ガス濃度を算出す゛ る。例えば
メタンと水素とでは、加熱に対するセンサ出力の応答波
形が異なり、Ｓ ｌでの出力と８２での出力を加味する
と、メタンか水素かの識別ができる。そしてヒータ加熱
信号のデユーティ比を小さくすると、消費電力は著しく
減少する。The gas is then detected from this response. For example, signal S,
The output is sampled at point S, the type of gas is discriminated from these values, and the gas concentration is calculated. For example, methane and hydrogen have different sensor output response waveforms to heating, and when the output at S1 and the output at 82 are taken into consideration, it is possible to distinguish between methane and hydrogen. When the duty ratio of the heater heating signal is reduced, power consumption is significantly reduced.
［発明の効果１
この発明では、構造が簡単でかつ消費電力の小さなガス
センサが得られる。[Effect of the Invention 1] According to the present invention, a gas sensor having a simple structure and low power consumption can be obtained.
第１図は実施例のガスセンサの要部平面図、第２図は第
１図の要部拡大平面図、第３図は第１図の要部拡大断面
図、第４図は実施例のガスセンサの全体構造を表す断面
図である。
第５図は、実施例のガスセンサに適した付帯回路の回路
図、第６図（１）、（２）はその動作波形図である。
図において、 ２ 耐熱絶縁性基板、４ 断熱用
ガラス膜、６ ヒータ膜、
８ ヒータ電極、 ｌＯ絶縁膜、
１２ 検出電極、
１４ 金属酸化物半導体膜。Fig. 1 is a plan view of the main parts of the gas sensor of the example, Fig. 2 is an enlarged plan view of the main parts of Fig. 1, Fig. 3 is an enlarged sectional view of the main parts of Fig. 1, and Fig. 4 is the gas sensor of the example. FIG. FIG. 5 is a circuit diagram of an auxiliary circuit suitable for the gas sensor of the embodiment, and FIGS. 6 (1) and (2) are its operation waveform diagrams. In the figure, 2 heat-resistant insulating substrate, 4 heat insulating glass film, 6 heater film, 8 heater electrode, IO insulating film, 12 detection electrode, 14 metal oxide semiconductor film.
Claims (3)
導体膜と、半導体膜に接続した電極膜と、ヒータ膜とを
有するセンサ本体を設けたガスセンサにおいて、 センサ本体と基板との間に断熱用のガラス膜を設けたこ
とを特徴とする、ガスセンサ。(1) In a gas sensor in which a sensor body is provided on a heat-resistant insulating substrate, the sensor body has a metal oxide semiconductor film for gas detection, an electrode film connected to the semiconductor film, and a heater film, between the sensor body and the substrate. A gas sensor characterized by having a glass film for insulation.
、半導体膜と電極膜とを積層したものとしたことを特徴
とする、請求項１に記載のガスセンサ。(2) The gas sensor according to claim 1, wherein the sensor body is made by laminating a semiconductor film and an electrode film on a heater film with an insulating film interposed therebetween.
ックとの混合膜とすると共に、絶縁膜の膜厚を断熱用の
ガラス膜の膜厚よりも小さくしたことを特徴とする、請
求項２に記載のガスセンサ。(3) The insulating film is a glass film or a mixed film of glass and ceramic, and the thickness of the insulating film is smaller than that of the glass film for heat insulation. Gas sensor listed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14547988A JPH01313751A (en) | 1988-06-13 | 1988-06-13 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14547988A JPH01313751A (en) | 1988-06-13 | 1988-06-13 | Gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01313751A true JPH01313751A (en) | 1989-12-19 |
Family
ID=15386207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14547988A Pending JPH01313751A (en) | 1988-06-13 | 1988-06-13 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01313751A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225857U (en) * | 1988-08-05 | 1990-02-20 | ||
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| US5759367A (en) * | 1995-11-14 | 1998-06-02 | Figaro Engineering Inc. | Gas sensor |
| WO2001028915A1 (en) * | 1999-10-19 | 2001-04-26 | Seju Engineering Co., Ltd. | Gas sensor and fabrication method thereof |
| WO2002046734A1 (en) * | 2000-12-07 | 2002-06-13 | Matsushita Electric Industrial Co., Ltd. | Gas sensor and detection method and device for gas.concentration |
| KR20030003171A (en) * | 2002-11-27 | 2003-01-09 | (주)니즈 | Pulse driving method gas sensor using the differently of thermal conductance of layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55920U (en) * | 1978-06-08 | 1980-01-07 |
-
1988
- 1988-06-13 JP JP14547988A patent/JPH01313751A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55920U (en) * | 1978-06-08 | 1980-01-07 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225857U (en) * | 1988-08-05 | 1990-02-20 | ||
| JPH07198646A (en) * | 1993-12-04 | 1995-08-01 | Lg Electron Inc | Low power-consumption-type thin film gas sensor and preparation thereof |
| US5759367A (en) * | 1995-11-14 | 1998-06-02 | Figaro Engineering Inc. | Gas sensor |
| WO2001028915A1 (en) * | 1999-10-19 | 2001-04-26 | Seju Engineering Co., Ltd. | Gas sensor and fabrication method thereof |
| US6997040B1 (en) | 1999-10-19 | 2006-02-14 | Seju Engineering Co., Ltd. | Gas sensor and fabrication method thereof |
| WO2002046734A1 (en) * | 2000-12-07 | 2002-06-13 | Matsushita Electric Industrial Co., Ltd. | Gas sensor and detection method and device for gas.concentration |
| KR20030003171A (en) * | 2002-11-27 | 2003-01-09 | (주)니즈 | Pulse driving method gas sensor using the differently of thermal conductance of layer |
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