JPS62122234A - Gate array - Google Patents

Abstract

PURPOSE:To make it possible to make a device into LSI at a relatively low initial cost without depending on a full custom order LSI by forming four kinds of circuit bases such as a one-shot multivibrator function part, an oscillation circuit part, a Schmitt function part, and high drive power buffer part at a time in addition to basic cells in a gate array in which a plurality of basic cells are formed. CONSTITUTION:In a normal gate array 1, a plurality of basic cells 2 are formed in a form of semiconductor base. Among the respective aligned rows, wiring regions 3 are arranged. Also in an edge part of a semiconductor substrate 4, a plurality of terminal pads 5 are aligned. Near the terminal pads 5, a normal input and output buffer part 6 is formed in a form of semiconductor base. Furthermore, an active circuit part which composes a principal part of a one-shot multivibrator is constituted in a one-shot multivibrator function part 7, and an active circuit part which composes a principal part of an oscillation circuit in an oscillation circuit part 8 according to the specifications of users, respectively. Also, a circuit base for constituting a Schmitt trigger circuit carrying hysteresis characteristic is formed in a Schmitt function part 9. Then, a circuit base for constituting such output circuit of high drive power that it can drive an external communication circuit directly is formed in a high drive power buffer part 10.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to semiconductor integrated circuit device technology as well as technology that is particularly effective when applied to gate arrays whose circuit specifications are determined according to user requirements, such as Many 5SI (Small Semiconductor Integrated Circuit Devices) are used in digital application devices and systems such as Burnal Computers. The present invention relates to a technique that is effective when used to replace an MSI (medium-scale semiconductor integrated circuit device) with one or several LSIs (large-scale integrated circuit devices).

[Background technology]

For example, in digital application devices or systems such as personal computers, micro
The main parts of processors, video processors, etc. are made up of thick LSIs or VLSIs (Very Large Scale Semiconductor Integrated Circuits), but peripheral circuit parts such as interface parts are made up of a large amount of SSI JPMSIs. This SSIJPMSI is, for example, AN
Basic logic circuits such as D, 0RSNO'l', one-shot multivibrator, oscillation circuit, Schmitt circuit, high driving force output circuit, etc. are individually formed.
Its frequency of use far exceeds that of the LSI and VLSIv mentioned above in terms of number. For example, in a typical personal computer, there are several to several LSIs and several tens to hundreds of 5SIs. MSI is used.

Therefore, attempts have been made to simplify the configuration of digital application devices or systems such as personal computers by converting them into LSIs such as SSIs and MSIs. In order to implement this LSI, for example, the Nikkei Electronics 1985, 6
A gate array is provided as described in the March 3 issue of J, pages 151-177. This gate array is
A large number of basic cells are integrated on a single semiconductor substrate in the form of a semiconductor base, and only the internal connections are determined according to the user's order, resulting in a very low initial cost. Custom order LSI
can be configured.

A gate array has a large number of basic cells arranged in a regular manner, and Kotoni Yosu, A.
ND, OR, NOT, R87! A digital circuit network can be constructed by combining basic logic circuits such as J-tube flops. Therefore, by using this gate array, a large portion of the large amount of SSI and MSI used in, for example, personal computers can be converted into LSI.

However, although the internal wiring of gate arrays is determined by the user's order, there are certain rules for how to connect them, and any circuit can be assembled. I'm not going. For example, a one-shot multivibrator, an oscillation circuit, a Schmitt circuit, a high-drive blade output six circuit, and an electric shock absorber could not be constructed using basic cells prepared in advance.

For this reason, only a portion of SSI-IPMsI, which are widely used in personal computers, can be replaced by gate arrays, and even if gate arrays are used, there are still a considerable number of 5SI-IPMsI. MSI was needed. In other words, gate arrays alone were not sufficient to truly simplify the configuration of digital application devices or systems such as personal computers.

Therefore, in order to completely convert the 8SI JPMSI into an LSI and dramatically reduce the number of semiconductor integrated circuit devices used, it is necessary to use semi-e-customized gate arrays (from the initial formation stage of the semiconductor base). User specification LSI, so-called full custom order LS
I had no choice but to use IV. However, this full
The initial cost of a custom-ordered LSI is very high, so 5SI-? If you try to convert the part composed of MSI to 1LsI, you will inevitably have to produce a wide variety of products in small quantities, which means that you will not be able to benefit from the mass production effect, which is the most important feature of semiconductor integrated circuit devices, and the unit cost will increase significantly. Put it away.

As described above, circuits that make extensive use of SSIJPMSN cannot be completely replaced with gate arrays, which complicates the configuration of digital application devices or systems such as personal computers, and reduces product costs. The present inventors have clarified the following problem:

[Purpose of the invention]

The purpose of this invention is to replace most of the digital circuits that use many SSIs and MSIs without relying on fully custom-ordered LSIs, which have extremely high initial costs.
It is an object of the present invention to provide a semiconductor integrated circuit device technology that allows it to be integrated into an LSI at a relatively low initial cost.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the Invention] Representative inventions disclosed in this application are briefly explained below.

That is, in addition to the above-mentioned basic cells, four types of circuit bases, including a one-shot multivibrator function section, an oscillation circuit section, a seamity function section, and a high driving force back-up 77 section, are added to a gate array in which a large number of basic cells are formed. By simultaneously forming most of the digital circuits that are frequently used in SSI and MSI? , it is possible to create an LSI at a relatively low initial cost, without relying on a fully custom-ordered LSI, which has an extremely high initial cost.
This goal is achieved.

〔Example〕

Hereinafter, typical embodiments of the present invention will be described with reference to the drawings.

In the drawings, the same reference numerals indicate the same or corresponding parts.

FIG. 1 shows an embodiment of a semiconductor integrated circuit device to which the technology according to the present invention is applied.

The semiconductor integrated circuit device shown in the figure is a type of LSI formed as a gate array 1. First, a normal gate array 1 is formed, and a large number of basic cells 2 are formed. The basic cells 1 are formed in the form of a semiconductor base, and are arranged in a plurality of columns in the row direction. A wiring region 3 is placed between each arrangement. Further, a large number of terminal pads 5 are arranged on the edge of the semiconductor substrate 40, and a normal input/output buffer section 6 is formed in the form of a semiconductor base near the terminal pads 50.

The above-mentioned basic cell 2 can be connected using aluminum wiring according to user specifications.
It is used to arbitrarily configure basic logic circuits such as OR, NOT, and R87 logic circuits. The input/output buffer section 6 can be either an input buffer circuit, an output buffer circuit with normal driving power, or a bidirectional buffer circuit, depending on the aluminum wiring method based on the circuit specifications provided by the user. is formed arbitrarily.

With the components described above, it is possible to configure a digital circuit using only basic logic circuits in accordance with the specifications required by most users.

Furthermore, in the embodiment shown in FIG.
In addition to the one-shot multi-vibrator function
7. The oscillation circuit section 8, the Schmitt function section 9, and the high driving force output buffer section 10 are formed at the same time.

In this case, the one-shot multivibrator function section 7 has an active circuit section that is the main part of the one-shot multivibrator, and the oscillation circuit section 8 has an active circuit section that is the main part of the oscillation circuit, depending on the user's specifications. It is designed to be configured as follows.

Further, the Schmitt function section 10 is provided with a circuit base for constructing a Schmitt trigger circuit having hysteresis characteristics. And high driving force 2977 parts 11
For example, a circuit base for configuring a high driving power output circuit that can directly drive an external communication line is formed.

As described above, in addition to the basic cells 2, the one-shot multivibrator function section 7, the oscillation circuit section 8, the seam function section 9, and the high driving force are added to the gate array 1 in which a large number of basic cells 2 are arranged. By simultaneously forming four types of circuit bases for the buffer section 10, SSI and MSI'
Most of the digital circuits that are commonly used in
By becoming an I, it becomes more important.

Figure 2 shows the one-shot multi-by-break function section 7.
An example is shown below.

The one-shot multivibrator function section 7 includes, for example, a D-slip block 71 and some basic logic gates 7.
2.73. In this case, the one-shot multivibrator function section 7 has an active circuit section formed on the semiconductor substrate except for its operating time constants Ct and Rtft. Time constants Ct and Rt due to capacitors and resistors
is connected to the outside of the ℃ semiconductor integrated circuit device via the buffer section 10.6 and the terminal pad 5.

In other words, they are now being installed externally.

In addition, in FIG. 2, Vcc indicates a power supply. D is a delay input of the D flip-flop 71 and is fixed at H (high level). Also, CK is the clock input of the D7 lip flop 71, +Q.

-Q indicates the holding output of the D7 lip-flop 71, and CL indicates the clearing power. Further, Tin indicates the manual trigger of the one-shot multivibrator, Cin indicates the clear terminal of the one-shot multivibrator, and out indicates the output of the one-shot multivibrator.

FIG. 3 shows an example of the oscillation circuit section 8. As shown in FIG.

The oscillation circuit section 8 is made up of logic gates 81, 82, and 83 specially designed for the oscillation circuit.In this oscillation circuit section 8, only the active circuit section except its operating time constant is semiconductor. It is formed on the substrate. Its operating time constant is based on the crystal oscillator Xtal and the load capacitances cl and c2.
is externally connected via a terminal pad 5.

〔effect〕

+11 In addition to the above-mentioned basic cells, four types of circuit bases, including a one-shot multivibrator function section, an oscillation circuit section, a Schmitt function section, and a high driving force 2777 section, are simultaneously formed on a gate array in which a large number of basic cells are formed. By doing so, most of the digital circuits that are constructed using 8SI JPMSI can be converted into LSIs at a relatively low initial cost, without relying on full-fledged custom-ordered LSIs, which have an extremely high initial cost. The effect is that it becomes.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that this invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, the above time constant C
A circuit equivalent to t and Rt may be formed in the semiconductor substrate using a switched capacitor or the like.

Minute hand for use in the mouth] Above, we have described the case in which the invention made by the present inventor is applied to the technology of general-purpose gate arrays, which is the application field that formed the background of the invention. It can also be applied to dedicated LSI technology aimed at.

[Brief explanation of drawings]

1 is a diagram showing the configuration of a gate array to which the technology according to the present invention is applied; FIG. 2 is a circuit diagram showing an example of a one-shot multivibrator functional section formed in the gate array of FIG. 1; FIG. 3 is a circuit diagram showing an example of an oscillation circuit section formed within the gate array of FIG. 1. DESCRIPTION OF SYMBOLS 1... Gate array, 2... Basic cell, 3... Wiring area, 5... Terminal pad, 6... Normal package,
7... One-seat multi-vibrator function section, 8
...Oscillation circuit section, 9... Seamit function section, 10.
・High drive side buff 7 parts, Fig. 3

Claims (1)

[Claims] 1. In a gate array in which a large number of basic cells are formed on a semiconductor substrate, together with basic cells for configuring a normal logic gate, a one-shot multivibrator function section, an oscillation circuit section, A gate array characterized in that a Schmitt function section and a high driving force buffer section are formed at the same time. 2. The gate array according to claim 1, wherein each of the one-shot multivibrator function section and the oscillation circuit section has an active circuit section excluding an operation time constant formed on a semiconductor substrate. .