JPS62121408A - Module for optical wavelength multiplex transmission - Google Patents
Module for optical wavelength multiplex transmissionInfo
- Publication number
- JPS62121408A JPS62121408A JP26106385A JP26106385A JPS62121408A JP S62121408 A JPS62121408 A JP S62121408A JP 26106385 A JP26106385 A JP 26106385A JP 26106385 A JP26106385 A JP 26106385A JP S62121408 A JPS62121408 A JP S62121408A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- passive waveguide
- waveguide layer
- layer
- optical coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、光を分波または分波する光学デバイス、すな
わち、光波長多重伝送に用いられる光合波１分波、ある
いは合分波部を有する光モジュールに関する。Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to an optical device that separates or demultiplexes light, that is, an optical device that has an optical multiplexer/demultiplexer or a multiplexer/demultiplexer used in optical wavelength multiplexing transmission. Regarding optical modules.
元ファイバ通信における光波長多重伝送技術は経隣化を
はかる上で重要である。上記光波長多重伝送において、
光合分波器は必須のデバイスである。Optical wavelength division multiplexing transmission technology in original fiber communications is important for achieving regionalization. In the above optical wavelength division multiplexing transmission,
Optical multiplexer/demultiplexer is an essential device.
従来、光合分波器には、干渉膜フィルタを用いる構成、
回折格子を用いる構成、プリズムを用いる構成が検討さ
れている。しかし、従来のこの種光合分波器は非常に高
価であるという問題点があり１元通信システムの適用領
域拡大の障壁になっていた。高価な原因は、上記光合分
波器は個別部品の組合せであシ、構造が複雑で部品点数
が多く、組立て加工、光軸調整に時間がかかり、かつ量
産化が困難なためでめった。Conventionally, optical multiplexer/demultiplexer has a configuration using an interference film filter,
A configuration using a diffraction grating and a configuration using a prism are being considered. However, this type of conventional optical multiplexer/demultiplexer has the problem of being very expensive, which has been an obstacle to expanding the range of applications for single-source communication systems. The reason for the high cost is that the above-mentioned optical multiplexer/demultiplexer is a combination of individual parts, has a complicated structure, has a large number of parts, takes time to assemble and adjust the optical axis, and is difficult to mass produce.
本発明の目的は、前記問題点を解決させることにある。 An object of the present invention is to solve the above problems.
すなわち、よυ簡易化、経済化をはかれる光波長多重伝
送用モジュールを提供することにある。That is, the object of the present invention is to provide an optical wavelength division multiplexing transmission module that can be simplified and made more economical.
本発明は半導体基板上に受動導波路層を形成させ、その
受動導波路層の上に中間層を介してもう一つの受動導波
路層ｒ積層させ、この積層受動導改路層にテーパ状の光
結合部を設けることにより、光を結付１公及させるよう
にし、そして、これら受動導波路層に半導体発光、受光
素子を結合するように形成させた１チツプモノリシツク
形の光波長多重伝送用モジュールである。In the present invention, a passive waveguide layer is formed on a semiconductor substrate, another passive waveguide layer r is laminated on the passive waveguide layer via an intermediate layer, and a tapered shape is formed on this laminated passive waveguide layer. A one-chip monolithic optical wavelength multiplexing transmission system in which an optical coupling section is provided to couple light to the public, and these passive waveguide layers are formed to couple semiconductor light-emitting and light-receiving elements. It is a module for
第１図は本発明の光波長多重伝送用モジュールの一実施
例を示したもので、同図（ａ）は正面図、（ｂ）は上面
図である。本モジュールはＩｎ（）ａＡｓｐ／ＩｎＰ
系材料を用いた場合の実施例であり、２波長双方向伝送
用モジユールである。すなわち１発振波長λ１の半導体
レーザ１１の光信号１３−１は矢印１３−３のごとくモ
ジュールから伝送され。FIG. 1 shows an embodiment of an optical wavelength division multiplexing transmission module of the present invention, in which (a) is a front view and (b) is a top view. This module is In()aAsp/InP
This is an example in which a system material is used, and it is a two-wavelength bidirectional transmission module. That is, an optical signal 13-1 from the semiconductor laser 11 having one oscillation wavelength λ1 is transmitted from the module as indicated by an arrow 13-3.
矢印１４−１のごとくモジュール内に入ってきた波長λ
２の光信号は矢印１４−２のように伝搬し。The wavelength λ that entered the module as shown by arrow 14-1
The optical signal No. 2 propagates as shown by arrow 14-2.
受光素子１０で受光される。１２は半導体レーザ１１の
光信号（矢印１３−２）をモニタするための受光素子で
ある。１５が積層テーパ型光結合部でめり、矢印１４−
１のごとくモジュール内に入ってきた成長λ２の光信号
はこの結合部１５で結合し、矢印１４−２のごとく移行
して伝搬する。The light is received by the light receiving element 10. 12 is a light receiving element for monitoring the optical signal (arrow 13-2) of the semiconductor laser 11. 15 is a laminated tapered optical coupling part, arrow 14-
The optical signal of growth λ2 that has entered the module as shown in FIG.
１はＩｎＰ基板でのり、その上に１０２７７７７層２が
形成され、このバッファ層２の上にＩｎＧａＡＳＰによ
る活性導波路層３．ＩｆｌＰ中間層４、第２のＩｎＧａ
Ａ８Ｐによる受動導波路層５゜ＩｆｌＰによる第２のク
ラッド層６が形ｒｉＸ、され、半導体レーザ１１と受光
素子１２が成長されている。1 is an InP substrate, on which a 1027777 layer 2 is formed, and on this buffer layer 2 an active waveguide layer 3 made of InGaASP is formed. IflP intermediate layer 4, second InGa
A passive waveguide layer 5 made of A8P and a second cladding layer 6 made of IflP are formed by RIX, and a semiconductor laser 11 and a light receiving element 12 are grown.
またＩｎＰバックァ層２の上には１１１ＧａＡ８Ｐによ
る受動導波路層７が形成され、その上にＩｎＰ中間層８
を介してＩｎＧａＡＳＰによる受動導波路層９と受光素
子１０が形成されている。ここで、導波路／ｆｊ７，９
ＣＤ屈折率”７＋ ｎ９は、ＩｎＰ中間層８の屈折率
ｎ８よりも高くしである。積層テーパ型光結合部１５の
導波路層９と中間層８はテーパ状にすることにより、こ
の導波路層９の位相定数にテーパを持たせである。波長
λ２において、上記結合部１５のほぼ中央付近で導波路
層７の位相定数と導波路層９の位相定数が一致するよう
に設定しである（位相整合状態）。積層構造であるので
、中間層８の膜厚、屈折率制御により、結合係数を大き
くとれるため、従来の２つの光導波路を並置する方式に
比し、結合部１５の結合長を小さくすることができる。Furthermore, a passive waveguide layer 7 made of 111GaA8P is formed on the InP backer layer 2, and an InP intermediate layer 8 is formed thereon.
A passive waveguide layer 9 and a light-receiving element 10 made of InGaASP are formed therebetween. Here, the waveguide/fj7,9
The CD refractive index "7+ n9 is higher than the refractive index n8 of the InP intermediate layer 8. By tapering the waveguide layer 9 and the intermediate layer 8 of the laminated tapered optical coupling section 15, this waveguide The phase constant of the layer 9 is tapered.At the wavelength λ2, the phase constant of the waveguide layer 7 and the phase constant of the waveguide layer 9 are set to match approximately near the center of the coupling portion 15. (Phase matching state).Since it is a laminated structure, the coupling coefficient can be increased by controlling the film thickness and refractive index of the intermediate layer 8, so compared to the conventional method of arranging two optical waveguides in parallel, the coupling part 15 is The length can be reduced.
また結合部１５の等側屈折率Ｎが波長λ２においてｎ９
より小さくなるように、”７ ＊ ｎ８ ＋ ０９
の値、テーパ形状、導波路の幅、厚さを制御することに
より、狭帯域な波長選択特性をもたせることができる。Furthermore, the isolateral refractive index N of the coupling portion 15 is n9 at the wavelength λ2.
To make it smaller, “7 * n8 + 09
By controlling the value of , the taper shape, the width and thickness of the waveguide, it is possible to provide narrowband wavelength selection characteristics.
すなわち、波長λｌとλ２の間隔が狭い場合でも良好な
分波特性をもたせることができる。さらに第１図の場合
において、たとえば、λ七〉λ２の場合には、結合部１
５のテーパ形状を波長λ１に対してカットオフとなるよ
うに設定することができるので、端面１６などからの波
長λ１の反射信号が結合部１５を介して受光素子１０に
入射するのを抑圧でき、λ１とλ２のアイソレーション
を大きくとれる。That is, even when the interval between the wavelengths λl and λ2 is narrow, good demultiplexing characteristics can be provided. Furthermore, in the case of FIG. 1, for example, if λ7>λ2, the coupling part 1
Since the taper shape of 5 can be set to be a cut-off with respect to the wavelength λ1, it is possible to suppress the reflection signal of the wavelength λ1 from the end face 16 etc. from entering the light receiving element 10 via the coupling part 15. , large isolation between λ1 and λ2 can be achieved.
第２図は本発明の光波長多重伝送用モジュールの別の実
施例を示したものである。これはＩｎＧａＡＳＰによる
受動導波路層９の上に誘電体層１７を付加することによ
り、１８の部分での結合を生じにくクシたものである。FIG. 2 shows another embodiment of the optical wavelength division multiplexing transmission module of the present invention. This is done by adding a dielectric layer 17 on top of the passive waveguide layer 9 made of InGaASP, thereby making it difficult for coupling to occur at the portion 18.
すなわち、１８の部分での導波路層７と９の位相定数差
を大きくすることにより、波長λの光信号が受光素子１
０へもれこむのを抑圧させる。誘電体層１７の屈折率は
受動導波路層９の屈折率ｎ９よりも低い値に設定される
。That is, by increasing the phase constant difference between the waveguide layers 7 and 9 at the portion 18, the optical signal with the wavelength λ is transmitted to the light receiving element 1.
Suppress leakage to 0. The refractive index of the dielectric layer 17 is set to a value lower than the refractive index n9 of the passive waveguide layer 9.
第３図は本発明の光波長多重伝送用モジュールの別の実
施例である。これは結合部１５の中間層１９の屈折率を
中間層８のｎ８よりも大きく、屈折率”ｉｌ＋ ｎ７
に近づけることによシ、結合をよシ密に、逆に遠ざける
ことにより、結合を疎に調整することができる。FIG. 3 shows another embodiment of the optical wavelength multiplexing transmission module of the present invention. This makes the refractive index of the intermediate layer 19 of the coupling part 15 larger than n8 of the intermediate layer 8, and the refractive index "il + n7
By moving it closer to , the coupling can be made more dense, and by moving it further away, the coupling can be made looser.
第４図は本発明の光波長多重伝送用モジュールの別の実
施例である。これは、受動導波路層９の受光素子１０側
にもテーパ部２０を設けたものである。このテーパ部２
０は波長λ１に対して導波モードがカットオフとなるよ
うに選ばれる。これにより、より禰話減衰量を大きくと
ることが可能となる。FIG. 4 shows another embodiment of the optical wavelength multiplexing transmission module of the present invention. In this case, a tapered portion 20 is also provided on the light receiving element 10 side of the passive waveguide layer 9. This tapered part 2
0 is selected so that the waveguide mode is cut off for wavelength λ1. This makes it possible to obtain a larger amount of attenuation.
第５図は結合部１５の中間層部にグレーティング２１を
形成させた場合の実施例である。このグレーティング２
１は波長λｌの光は反射させ、波長λ２の光を透過させ
るように選ばれる。このグレーティング２１を設けるこ
とにより、Ｍ合部１５の波長選択性をより鋭くできる。FIG. 5 shows an embodiment in which a grating 21 is formed in the intermediate layer portion of the coupling portion 15. As shown in FIG. This grating 2
1 is selected so as to reflect light of wavelength λl and transmit light of wavelength λ2. By providing this grating 21, the wavelength selectivity of the M joint portion 15 can be sharpened.
第６図は本発明の光波長多重伝送用モジュールの別の実
施例である。これは３波長双方向多重伝送用モジュール
の場合であり、矢印１４−１方向から波長λ２．λ３の
光信号がモジュール内に入射し、矢印１３−３方向へ波
長λｌの光信号が出射する。波長λ２の光信号は結合部
１５で結合し。FIG. 6 shows another embodiment of the optical wavelength division multiplexing transmission module of the present invention. This is the case of a three-wavelength bidirectional multiplex transmission module, in which the wavelength λ2... from the direction of arrow 14-1. An optical signal of wavelength λ3 enters the module, and an optical signal of wavelength λl is emitted in the direction of arrow 13-3. The optical signals of wavelength λ2 are combined in a coupling section 15.
矢印１４−２方向へ移行する。波長λ３の光信号は結合
部２３で結合し、矢印１４−３のごとく移行する。Move in the direction of arrow 14-2. The optical signals of wavelength λ3 are combined at the coupling section 23 and migrated as shown by the arrow 14-3.
第７図は本発明の光波長多重伝送用モジュールの別の実
施例である。これは埋め込み型光導波構造の場合である
。２５はクラット部２４に埋め込まれた受動導波路であ
る。３１．３２はそれぞれ発損波長がλ１．λ４の半導
体レーザ、３３゜３４はモニタ光検出用受光素子、３０
は波長λ２の光信号を受光する受光素子、２６け光合波
用Ｙ字型導波路部、２７は積層テーパ形光結合部。FIG. 7 shows another embodiment of the optical wavelength multiplexing transmission module of the present invention. This is the case for buried optical waveguide structures. 25 is a passive waveguide embedded in the crat part 24. 31 and 32 have emission wavelengths of λ1 and 32, respectively. λ4 semiconductor laser, 33° 34 is a light receiving element for monitoring light detection, 30
2 is a light receiving element for receiving an optical signal of wavelength λ2, 26 Y-shaped waveguides for multiplexing light, and 27 is a laminated tapered optical coupling section.
２９は受動導波路、２８は中間層部である。そして矢印
３５方向へ波長λ１．λ４の光信号を出射させ、矢印３
６方向からの波長λ２の光信号を入射させる。波長λ２
の光信号は光結合部２７を介して受動導波路２９へ移行
する。29 is a passive waveguide, and 28 is an intermediate layer section. Then, in the direction of arrow 35, wavelength λ1. Emit the optical signal of λ4 and follow the arrow 3
Optical signals of wavelength λ2 are input from six directions. Wavelength λ2
The optical signal is transferred to the passive waveguide 29 via the optical coupling section 27.
本発明は上記実施例に限定されない。まず波長多重数は
４波以上でもよい。また送信用信号光と受信用信号光は
いずれも少なくとも１つ以上含んでいるか、あるいはす
べてが送信用信号光が受信用信号光であってもさしつか
えない。半導体レーザの代わりに発光ダイオードでもよ
い。受光素子は半導体レーザ構造のもの以外に、アバラ
ンシェホトダイオードでもよい。半導体材料としてはＩ
ｎＧａＡｓＰ／ＩｎＰ 系以外に、ＧａＡｔＡｓ／Ｇａ
ＡｔＡｓ系、 ＧａＡｓＳｂ／ｎ−ＡｌＧａＡｓＳｂ系
。The invention is not limited to the above embodiments. First, the number of wavelengths to be multiplexed may be four or more. Further, it is possible that both the transmitting signal light and the receiving signal light include at least one or more, or all of the transmitting signal light and the receiving signal light may be the receiving signal light. A light emitting diode may be used instead of a semiconductor laser. The light receiving element may be an avalanche photodiode instead of a semiconductor laser structure. As a semiconductor material, I
In addition to the nGaAsP/InP system, GaAtAs/Ga
AtAs system, GaAsSb/n-AlGaAsSb system.
ＬｉＮｂＯ３系などにも適用可能なことは言うまでもな
い。Needless to say, it is also applicable to LiNbO3 systems.
また第２図の誘電体層１７は第３． ４． ６． ７図
にも適用できる。さらに第３図の中間層１９も第２．４
，５，６．７図にも適用できる。また第４図のテーパ導
波部２０も第２． ３． ５． ６． ７図に適用でき
る。さらに第７図のＹ字を導波路部２６も第１〜６図の
実施例に適用できる。Further, the dielectric layer 17 in FIG. 4. 6. It can also be applied to Figure 7. Furthermore, the intermediate layer 19 in FIG.
, 5, 6.7 can also be applied. Further, the tapered waveguide section 20 in FIG. 3. 5. 6. Applicable to Figure 7. Furthermore, the Y-shape shown in FIG. 7 can also be applied to the waveguide section 26 in the embodiments shown in FIGS. 1 to 6.
本発明によれば、半導体基板上に光合分波部。 According to the present invention, an optical multiplexing/demultiplexing section is provided on a semiconductor substrate.
光素子を一体化形成した１テツグモノリシツク形光モジ
ユールを得ることが可能である。しかも、よシ簡易、小
形構造で、かつ波長間隔の狭い複数の光信号を用いた場
合にも漏話量の非常に小さいモジュールが実現可能であ
る。It is possible to obtain a one-teg monolithic optical module in which optical elements are integrally formed. Moreover, it is possible to realize a module with a very simple and compact structure and with a very small amount of crosstalk even when a plurality of optical signals with narrow wavelength intervals are used.
第１〜６図は本発明の実施例になる光波長多重伝送用モ
ジュールの断面図、第７図は他の実施例になるモジュー
ルの斜視図である。
１・・・基板、２・・・バッファ層、３・・・活性４波
路層。
４・・・中間層、５，７，９，２５．２９・・・受動導
波路層、６．２４・・・クラッド層、８，１９．２８・
・・中間層、１０，１２，２２，３０，３３，３４・・
・受光素子、１１，３１．３２・・・半導体レーザ、１
３−１〜１３−３．１４−１〜１４−３． ３５゜３６
・・・光の伝搬方向を示す矢印、１５，２３゜２７・・
・積層テーパ形光結脅部、１６・・・端面、１７・・・
誘（体層、２０・・・テーバ部、２１・・・グレーティ
嘉 ４ 図
省 ５ 図
ｘ Ｚ 図
′＼
５ 〜
ミ ν1 to 6 are cross-sectional views of an optical wavelength division multiplexing transmission module according to an embodiment of the present invention, and FIG. 7 is a perspective view of a module according to another embodiment. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Buffer layer, 3...Active 4 wave path layer. 4... Intermediate layer, 5,7,9,25.29... Passive waveguide layer, 6.24... Clad layer, 8,19.28...
・Middle layer, 10, 12, 22, 30, 33, 34...
・Photodetector, 11, 31.32... Semiconductor laser, 1
3-1 to 13-3.14-1 to 14-3. 35°36
・・・Arrow indicating the propagation direction of light, 15, 23° 27...
・Laminated tapered light connection part, 16... end face, 17...
Body layer, 20...Theba part, 21...Graty Ka 4 Figure Ministry 5 Figure x Z Figure'\ 5 ~ Mi ν
Claims (1)
中間層を介して第２の受動導波路層を積層させ、該第２
の積層受動導波路層にその厚みがテーパ状に変化した光
結合部を少なくとも１個所設けたことを特徴とする光波
長多重伝送用モジュール。 ２、第１、２の受動導波路層の片端側に半導体発光素子
か、受光素子を少なくとも１個、あるいは両方を少なく
とも１個設けたことを特徴とする第１項記載の光波長多
重伝送用モジュール。 ３、光結合部における中間層の厚みもテーパ状に変化さ
せたことを特徴とする第１、２項記載の光波長多重伝送
用モジュール。 ４、光結合部以外の第２の受動導波路層の上にその層の
屈折率よりも低い誘電体を付加したことを特徴とする第
１〜３項記載の光波長多重伝送用モジュール。 ５、光結合部の中間層の屈折率を受動導波路層のそれよ
りも低い値で、光結合部以外の中間層。 それと異ならしめたことを特徴とする第１〜４項記載の
光波長多重伝送用モジュール。 ６、光結合部の中間層にグレーテイングを形成させたこ
とを特徴とする第１〜５項記載の光波長多重伝送用モジ
ュール。 ７、光結合部の位相整合状態における波長で、その光結
合部の等価屈折率が第２の受動導波路層の屈折率よりも
小さくなるように設定したことを特徴とする第１〜６項
記載の光波長多重伝送用モジュール。 ８、第１、２の受動導波路層の片端側を厚み、あるいは
幅をテーパ状に形成したことを特徴とする第１〜７項記
載の光波長多重伝送用モジュール。 ９、第１あるいは第２の受動導波路層にＹ字型の分岐導
波路を設けたことを特徴とする第１〜８項記載の光波長
多重伝送用モジュール。[Claims] 1. A second passive waveguide layer is laminated on a first passive waveguide layer formed on a semiconductor substrate via an intermediate layer, and the second passive waveguide layer is formed on a semiconductor substrate.
1. A module for optical wavelength multiplexing transmission, characterized in that a laminated passive waveguide layer is provided with at least one optical coupling portion whose thickness is tapered. 2. The optical wavelength multiplexing transmission according to item 1, characterized in that at least one semiconductor light emitting element, at least one light receiving element, or at least one of both is provided on one end side of the first and second passive waveguide layers. module. 3. The optical wavelength multiplex transmission module according to items 1 and 2, characterized in that the thickness of the intermediate layer in the optical coupling portion is also tapered. 4. The optical wavelength multiplexing transmission module according to items 1 to 3, characterized in that a dielectric material having a refractive index lower than that of the second passive waveguide layer other than the optical coupling portion is added on top of the second passive waveguide layer other than the optical coupling portion. 5. The refractive index of the intermediate layer of the optical coupling part is lower than that of the passive waveguide layer, and the intermediate layer other than the optical coupling part. 5. The optical wavelength multiplex transmission module according to any one of items 1 to 4, which is different from the above. 6. The optical wavelength multiplex transmission module according to items 1 to 5, characterized in that a grating is formed in the intermediate layer of the optical coupling part. 7. Items 1 to 6, characterized in that the equivalent refractive index of the optical coupling part is set to be smaller than the refractive index of the second passive waveguide layer at the wavelength in the phase matching state of the optical coupling part. The optical wavelength division multiplexing transmission module described above. 8. The optical wavelength multiplexing transmission module according to items 1 to 7, wherein one end side of the first and second passive waveguide layers is tapered in thickness or width. 9. The optical wavelength multiplexing transmission module according to items 1 to 8, characterized in that a Y-shaped branch waveguide is provided in the first or second passive waveguide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60261063A JPH081485B2 (en) | 1985-11-22 | 1985-11-22 | Optical wavelength division multiplexing module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60261063A JPH081485B2 (en) | 1985-11-22 | 1985-11-22 | Optical wavelength division multiplexing module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62121408A true JPS62121408A (en) | 1987-06-02 |
| JPH081485B2 JPH081485B2 (en) | 1996-01-10 |
Family
ID=17356560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60261063A Expired - Lifetime JPH081485B2 (en) | 1985-11-22 | 1985-11-22 | Optical wavelength division multiplexing module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH081485B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442606A (en) * | 1987-08-10 | 1989-02-14 | Hitachi Ltd | Branch waveguide type optical multiplexer and demultiplexer |
| JPS6465508A (en) * | 1987-09-04 | 1989-03-10 | Sharp Kk | Integrated optical element |
| JPH0246405A (en) * | 1988-08-05 | 1990-02-15 | Matsushita Electric Ind Co Ltd | Waveguide light isolator |
| EP0404301A2 (en) * | 1989-06-22 | 1990-12-27 | Nortel Networks Corporation | Optoelectronic apparatus and method for its fabrication |
| JP2003043275A (en) * | 2001-07-27 | 2003-02-13 | Fujikura Ltd | Optical multiplexer/demultiplexer, and method for manufacturing optical multiplexer/demultiplexer |
| JP2008051328A (en) * | 2006-08-28 | 2008-03-06 | Matsushita Electric Works Ltd | Equipment mounting structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5471653A (en) * | 1977-11-18 | 1979-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical branching filter |
| JPS54110858A (en) * | 1978-02-20 | 1979-08-30 | Nippon Telegr & Teleph Corp <Ntt> | Optical guide type wavelength filter |
| JPS57173818A (en) * | 1981-04-21 | 1982-10-26 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical switch |
-
1985
- 1985-11-22 JP JP60261063A patent/JPH081485B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5471653A (en) * | 1977-11-18 | 1979-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical branching filter |
| JPS54110858A (en) * | 1978-02-20 | 1979-08-30 | Nippon Telegr & Teleph Corp <Ntt> | Optical guide type wavelength filter |
| JPS57173818A (en) * | 1981-04-21 | 1982-10-26 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical switch |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442606A (en) * | 1987-08-10 | 1989-02-14 | Hitachi Ltd | Branch waveguide type optical multiplexer and demultiplexer |
| JPS6465508A (en) * | 1987-09-04 | 1989-03-10 | Sharp Kk | Integrated optical element |
| JPH0246405A (en) * | 1988-08-05 | 1990-02-15 | Matsushita Electric Ind Co Ltd | Waveguide light isolator |
| EP0404301A2 (en) * | 1989-06-22 | 1990-12-27 | Nortel Networks Corporation | Optoelectronic apparatus and method for its fabrication |
| JP2003043275A (en) * | 2001-07-27 | 2003-02-13 | Fujikura Ltd | Optical multiplexer/demultiplexer, and method for manufacturing optical multiplexer/demultiplexer |
| JP4514999B2 (en) * | 2001-07-27 | 2010-07-28 | 株式会社フジクラ | Optical multiplexer / demultiplexer and optical multiplexer / demultiplexer manufacturing method |
| JP2008051328A (en) * | 2006-08-28 | 2008-03-06 | Matsushita Electric Works Ltd | Equipment mounting structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH081485B2 (en) | 1996-01-10 |
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