JPS62119128U - - Google Patents
Info
- Publication number
- JPS62119128U JPS62119128U JP638586U JP638586U JPS62119128U JP S62119128 U JPS62119128 U JP S62119128U JP 638586 U JP638586 U JP 638586U JP 638586 U JP638586 U JP 638586U JP S62119128 U JPS62119128 U JP S62119128U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- overvoltage
- protection circuit
- overvoltage protection
- signal transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008054 signal transmission Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
Description
第１図ないし第５図における各図のイほ示す回
路はそれぞれ従来例を示す。第１図ないし第５図
における各図のロに示す回路は、本考案の効果を
得るために第１図ないし第５図における各図のイ
に示す主保護回路にそれぞれ接続するバイアス回
路の例である。第４図ハは示す回路は、同図ロの
バイアス回路をより具体化した例である。第６図
はダイオードのＣ―Ｖ特性を示す図である。
Ｄ１〜Ｄ２０…ダイオード、Ａ，Ａ′…過電圧
保護素子、Ｂ１〜Ｂ６…直流電源、Ｚ１〜Ｚ６…
インピーダンス、Ｒ１〜Ｒ７…高抵抗、Ｌ１〜Ｌ
４，Ｅ，Ｐ，Ｎ…端子、ｌ１〜ｌ４…信号伝送路
。
The circuits shown in each figure in FIGS. 1 to 5 are conventional examples. The circuits shown in B of each figure in FIGS. 1 to 5 are examples of bias circuits that are respectively connected to the main protection circuits shown in A of each figure in FIGS. 1 to 5 in order to obtain the effects of the present invention. It is. The circuit shown in FIG. 4C is a more specific example of the bias circuit shown in FIG. 4B. FIG. 6 is a diagram showing the CV characteristics of the diode. D1 to D20 ...Diode, A, A'...Overvoltage protection element, B1 to B6 ...DC power supply, Z1 to Z6 ...
Impedance, R1 to R7 ...High resistance, L1 to L
4 , E, P, N...terminals, l1 - l4 ...signal transmission path.
Claims (1)
電圧保護素子とによつて吸収するようにした過電
圧保護回路において、 前記ダイオードに逆バイアス電圧を印加したこ
とを特徴とする過電圧保護回路。[Claims for Utility Model Registration] An overvoltage protection circuit in which an overvoltage entering a signal transmission path is absorbed by a diode and an overvoltage protection element, characterized in that a reverse bias voltage is applied to the diode. protection circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP638586U JPS62119128U (en) | 1986-01-20 | 1986-01-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP638586U JPS62119128U (en) | 1986-01-20 | 1986-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62119128U true JPS62119128U (en) | 1987-07-29 |
Family
ID=30788854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP638586U Pending JPS62119128U (en) | 1986-01-20 | 1986-01-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62119128U (en) |
-
1986
- 1986-01-20 JP JP638586U patent/JPS62119128U/ja active Pending
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