JPS62118580A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To omit a lighting window, to make a case compact and to omit the necessity for providing a special erasing light source at the outside, by providing a light emitting source of erasing ultraviolet rays in a pellet including UVP-ROM. CONSTITUTION:Information is stored in an ultraviolet-ray erasing type programmable read only memory 11. An ultraviolet-ray emitting diode 12 emits ultraviolet rays for erasing said information. On a semiconductor integrated circuit 1 having the memory 11 and the diode 12, an ultraviolet-ray reflecting layer 3, which reflects the ultraviolet rays into the ultraviolet-ray erasing-type programmable read only memory 11, is provided. Said semiconductor integrated circuit pellet 1 and said ultraviolet-ray reflecting layer 3 are enclosed in a case 4. Then, e.g., a surface smoothing layer 2 is provided on the pellet 1. When the information stored in the UVP-ROM11 is erased, a current is imparted to the ultraviolet-ray emitting diode 12, and the light is emitted. The light is reflected by the ultraviolet-ray reflecting layer 3 through the surface smoothing layer 3 and uniformly projected on the surface of the UVP-ROM11. Thus the information is erased.

Description

[Detailed Description of the Invention] [Industry-1] Field of Application] The present invention relates to semiconductor integrated circuit devices, and particularly to ultraviolet erasable programmable read-only memories (hereinafter referred to as UVP).
-R, OM).

[Prior Art 1] FIG. 5 is a cross section [4] showing an example of a conventional semiconductor integrated circuit device in which LIV P-11,0M is 41.

Conventionally, a semiconductor integrated circuit device having this type of LIVr'-1fOM uses a ceramic case 23 with a window, and UV P-40M pellets 21 are irradiated with ultraviolet rays from the outside of the case 23 through an erasing ultraviolet irradiation window 22. ,
Memory information was being erased. That name, the case has 4
A translucent window was required, and an external light source for erasing (mainly a mercury lamp) was provided.

[Problem that the invention seeks to solve]

Semiconductor integrated circuit devices having the conventional LIV P-40M described above always require a window for ultraviolet irradiation, so the case itself becomes large and it is difficult to package the product in a small size. In order to prevent UV rays from being applied to the information, it is necessary to take measures such as pasting a non-transparent sticker on the irradiation window, and in addition, to actually erase information by irradiating UV rays, a special erasing device is required. It has the disadvantage of requiring a light source device.

Means for Solving Problems] A semiconductor integrated circuit device of the present invention includes an ultraviolet erasable programmable read-only memory for storing information and an ultraviolet light emitting diode for emitting ultraviolet light for erasing the information. pellet, and n? provided on the top of the semiconductor integrated circuit pellet. The present invention includes an ultraviolet reflection layer that reflects ultraviolet light and irradiates the ultraviolet erasable programmable read-only memory, and a case that houses the semiconductor integrated circuit pellet and the ultraviolet reflection layer.

[Example: 1 Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a sectional view of the first embodiment of the present invention, and FIG. 2 (a>
and (1)) are a plan view and a sectional view of the semiconductor integrated circuit (hereinafter referred to as pellet) in FIG. 1, and FIGS. 3 and 4 are sectional views of second and third embodiments of the present invention.

The first embodiment has a pellet I-1, a surface smoothing layer 2, an ultraviolet reflecting layer 3, and a case 4, as shown in the first example, and the pellet contains lJV P-RlOM 1-1 and ultraviolet rays. A light emitting diode 12 is provided. Note that the case 4 does not have a window for irradiation as in the conventional case.

To produce pellet 1, use ordinary moss (MOS).
It is only necessary to add 1-culm for manufacturing the ultraviolet light emitting diode 12 to the method for manufacturing a type semiconductor integrated circuit device. The light emitting direction of the ultraviolet light emitting diode 12 is determined by the L of the pellet 1.
Keep it facing up. Beret I.
The surface of No. 1 is extremely uneven. Therefore, in addition to arranging the ultraviolet light emitting diode 12 in the same pellet 1 at 11t, the ultraviolet reflective layer 3 was added to the pellet 1 so that all the cells of UVP-11 and 0M11 would receive sufficient light.
It is provided in some parts of the. The role of the surface smoothing layer 2 is to flatten the interface with the ultraviolet reflection layer 3 so that unevenness on the surface of the pellet 1 is not transmitted to the ultraviolet reflection layer 3, and to scatter light appropriately. These pellets 1, the smooth surface layer 2, and the ultraviolet reflection layer 3 are housed in a case 4, but since there is no need to provide a window for irradiation in the case 4, a normal ceramic case can be used. Furthermore, sealing with resin is of course possible.

In this embodiment configured as described above, UV P
-When erasing information stored in ROM 11,
When a current is applied to the ultraviolet light emitting diode 12 to cause it to emit light, the light is reflected by the ultraviolet reflection layer 3 via the surface smoothing layer 2, and is uniformly irradiated onto the surface of the UV P-ROM 11, thereby erasing information. .

In the second embodiment, as shown in FIG. 3, a translucent filter 5 having an ultraviolet reflection layer 6 is mounted on the pellet 1,
It is constructed by being housed in a case 7 without an irradiation window. The structure of the pellet 1 is similar to that of the first embodiment, and the transparent filter 5 is adhered to the pellet 1 or to the case 7.

Also in this case, the UVP by the ultraviolet light emitting diode 12
-R, 0M1+ information is erased in the same manner as in the first embodiment.

The third embodiment is shown in FIG.
Case 9 without an irradiation window so as to face pellet 1
-1-M91. Also in this case, the light from the ultraviolet light emitting diode 12 is reflected by the ultraviolet reflection layer 8, and is irradiated onto the UVP-ROM 1.1 to erase information.

〔Effect of the invention〕

As explained above, the present invention provides an erasing ultraviolet ray emission source within a pellet containing UVP-R, OM.
Since it is possible to use a case without an irradiation window, there is an effect that the case can be made smaller. Further, since no irradiation window is required, the resin-sealed case can be easily used, and there is no need to install a dedicated erasing light source device externally.

Further, by providing an ultraviolet reflection layer, there is an effect that erasing efficiency can be improved.

61

[Brief explanation of drawings]

The first country is a sectional view of an embodiment of the present invention, and FIG. 2 (;l)
J: , L: and (1)) are the plane of Beret 1 + #i lta IJ3 and 1l11 plane IA in Fig. 1, and Figs. 3 and 4 are the planes of the second and third embodiments of the present invention. cross section,
Figure 5 shows UV P-R. ( ) A cross-sectional view showing an example of a conventional semiconductor integrated circuit device having M. 1... Beret l., 2... Surface smooth layer, 3,6.8
...Ultraviolet reflective layer, 4.7.9.23...Case,
5... Transparent filter, 11... UVP-R. OM
, 12...UV light emitting diode, 21...LJV
P.R. OM Pellet 1, 22...UV irradiation window for erasing, 91...-11 years old.

Claims (1)

[Claims] A semiconductor integrated circuit pellet having an ultraviolet erasable programmable read-only memory for storing information and an ultraviolet light emitting diode for emitting ultraviolet light for erasing the information; A semiconductor integrated circuit device comprising: an ultraviolet reflection layer that irradiates the ultraviolet erasable programmable read-only memory; and a case that houses the semiconductor integrated circuit pellet and the ultraviolet reflection layer.