JPS6211786B2 - - Google Patents
Info
- Publication number
- JPS6211786B2 JPS6211786B2 JP9732082A JP9732082A JPS6211786B2 JP S6211786 B2 JPS6211786 B2 JP S6211786B2 JP 9732082 A JP9732082 A JP 9732082A JP 9732082 A JP9732082 A JP 9732082A JP S6211786 B2 JPS6211786 B2 JP S6211786B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- lead
- lead frame
- metal plate
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 description 7
- 238000003825 pressing Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置に使用されるリードフレー
ムの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a lead frame used in a semiconductor device.
半導体素子の電極部に接続されるリード先端部
を肉薄に形成した半導体装置のリードフレーム
は、従来、エツチング加工又はプレス加工により
製造されていた。しかし、エツチング加工では工
程が複雑なため安価で安定した製品が得られず、
又従来のプレス加工では、リード先端に肉薄部を
形成するとき、プレス時の加工歪が金属内に残留
し、特に肉薄部に歪が大きく残り、やはり安定し
たリードフレームが得られない欠点があつた。 2. Description of the Related Art Lead frames for semiconductor devices, in which lead tips connected to electrode portions of semiconductor elements are thinly formed, have conventionally been manufactured by etching or pressing. However, due to the complicated etching process, it is not possible to obtain inexpensive and stable products.
In addition, in conventional press working, when forming a thin wall part at the lead tip, processing strain during pressing remains in the metal, and large distortions remain especially in the thin wall part, which also has the disadvantage that a stable lead frame cannot be obtained. Ta.
本発明は上記の欠点を除去し、簡単なプレス加
工で安定したリードフレームを得るリードフレー
ムの製造方法を提供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a lead frame manufacturing method that eliminates the above-mentioned drawbacks and obtains a stable lead frame through simple press processing.
本発明の特徴は、金属板の一部をプレス加工す
る工程と、このプレス加工後に熱処理を行なつて
残留歪を除く工程と、エツチング加工によつて必
要形状のリードを形成する工程とを含むリードフ
レームの製造方法にある。 The features of the present invention include a step of press working a part of a metal plate, a step of performing heat treatment after the press work to remove residual strain, and a step of forming a lead of the required shape by etching. It is in the manufacturing method of lead frames.
以下、本発明の実施例を図面を用いて説明す
る。 Embodiments of the present invention will be described below with reference to the drawings.
第１図に示す金属板１はリードフレームとなる
もので、その一部に貫通孔２が設けられている。
この貫通孔２の位置は後でリードフレームを形成
したときそのリード先端が位置する部分に相当す
る。貫通孔２の部分を含み同心円状に貫通孔２の
周辺部範囲をプレスして押しつぶすと、第２図お
よび第３図に示すように、凹部３が形成され、そ
の下に肉薄部４が形成される。肉薄部４が貫通孔
２にせり出すことにより貫通孔２はその一部が埋
められて小さな貫通孔５となる。このように肉薄
部４の形成の際に、予め貫通孔２を形成しておく
ことにより、貫通孔２を形成しない場合より肉薄
部４は残留歪が少なく形成される。 A metal plate 1 shown in FIG. 1 serves as a lead frame, and a through hole 2 is provided in a part thereof.
The position of this through hole 2 corresponds to the portion where the lead tips will be located when the lead frame is formed later. When the peripheral area of the through hole 2 is pressed and crushed concentrically including the through hole 2, a recess 3 is formed and a thin wall portion 4 is formed below it, as shown in FIGS. 2 and 3. be done. As the thin portion 4 protrudes into the through hole 2, the through hole 2 is partially filled and becomes a small through hole 5. By forming the through hole 2 in advance when forming the thin portion 4 in this manner, the thin portion 4 is formed with less residual strain than when the through hole 2 is not formed.
ここで、プレス加工によりリードフレーム７′
のパターンが打抜かれると、プレス時の加工歪に
よつて第４図に示すように肉薄形状のリード先端
部９は破線で示す初期のパターンより僅かながら
位置ずれすることがある。そこで、この金属板１
を、第５図に示すように、肉薄部４を残して部分
６を除去しリードフレーム７を形成する。この状
態で熱処理を施す。金属板１の材質が例えば鉄、
ニツケル合金等では、700〜800℃で30分以上の熱
処理をし、リン青銅等では400℃で30分程度の熱
処理を行う。この熱処理によりプレス加工による
残留歪は大幅に解消される。熱処理後、肉薄部４
にエツチング加工によつてリード先端部９を形成
し、この後、第６図および第７図に示すように、
半導体素子１０の電極部１１に合わせてリード先
端部９を接続することにより半導体装置が得られ
る。リード先端部９は電極部１１と位置ずれする
ことなく接続する。 Here, the lead frame 7' is formed by pressing.
When the pattern is punched out, the thin lead tip 9 may be slightly displaced from the initial pattern indicated by the broken line due to processing distortion during pressing, as shown in FIG. Therefore, this metal plate 1
As shown in FIG. 5, the portion 6 is removed leaving the thin portion 4 to form a lead frame 7. Heat treatment is performed in this state. For example, the material of the metal plate 1 is iron,
For nickel alloys, etc., heat treatment is performed at 700 to 800°C for 30 minutes or more, and for phosphor bronze, etc., heat treatment is performed at 400°C for about 30 minutes. This heat treatment largely eliminates residual strain caused by press working. After heat treatment, thin section 4
A lead tip 9 is formed by etching, and then, as shown in FIGS. 6 and 7,
A semiconductor device is obtained by connecting the lead tip portions 9 to the electrode portions 11 of the semiconductor element 10. The lead tip portion 9 connects to the electrode portion 11 without being displaced.
なお、金属板１に貫通孔２を設けるほかに、第
８図に示すように貫通孔２の周囲の外部リードが
位置しない部分に小なる貫通孔１２を設けてもよ
い。この場合、点線１３で示す範囲の部分をプレ
スして押しつぶすとき、押された部分は貫通孔１
２にも分散して埋められ肉薄部の残留歪はより少
なくなる。 In addition to providing the through hole 2 in the metal plate 1, a small through hole 12 may be provided in a portion around the through hole 2 where no external lead is located, as shown in FIG. In this case, when pressing and crushing the area indicated by the dotted line 13, the pressed area is the through hole 1.
2 is also dispersed and buried, and the residual strain in the thin portion becomes smaller.
上述の如く、本発明になるリードフレームの製
造方法によれば、金属板に貫通孔を設けた後、こ
の貫通孔を含んだその周辺範囲の部分を押しつぶ
して肉薄部を形成し、この肉薄部がリード先端部
に位置するようにリードフレームを形成してなる
ため、歪の少ない安定した肉薄のリード先端を有
するリードフレームが簡単な工程で安価に製造し
うる等の特徴を有する。 As described above, according to the lead frame manufacturing method of the present invention, after a through hole is provided in a metal plate, a portion of the surrounding area including the through hole is crushed to form a thin wall portion. Since the lead frame is formed so that the leading edge is located at the lead tip, the lead frame has the advantage that a lead frame having a stable thin lead tip with little distortion can be manufactured at a low cost through a simple process.
第１図は貫通孔を設けた金属板の縦断面図、第
２図は肉薄部を形成した金属板の縦断面図、第３
図は第２図に示す金属板の平面図、第４図はリー
ド先端部が位置ずれした状態のリードフレームの
平面図、第５図は肉薄部を残してプレス加工して
得たリードフレームの平面図、第６図は半導体素
子を接続した状態のリードフレームの平面図、第
７図は第６図に示すリードフレームの―線に
沿つた縦断面図、第８図は複数個の貫通孔を設け
た金属板の平面図である。
なお図において、１…金属板、２…貫通孔、３
…凹部、４…肉薄部、５…小さな貫通孔、７，
７′…リードフレーム、８…外部リード、９…リ
ード先端部、１０…半導体素子、１１…電極、１
２…貫通孔である。
Figure 1 is a vertical cross-sectional view of a metal plate with through holes, Figure 2 is a vertical cross-sectional view of a metal plate with a thin section, and Figure 3 is a vertical cross-sectional view of a metal plate with a through hole.
The figures are a plan view of the metal plate shown in Fig. 2, Fig. 4 is a plan view of the lead frame with the lead tips displaced, and Fig. 5 is a plan view of the lead frame obtained by press-forming with the thin parts left intact. A plan view, FIG. 6 is a plan view of the lead frame with semiconductor elements connected to it, FIG. 7 is a vertical cross-sectional view of the lead frame shown in FIG. FIG. 2 is a plan view of a metal plate provided with In the figure, 1...metal plate, 2...through hole, 3
... recessed part, 4... thin wall part, 5... small through hole, 7,
7'... Lead frame, 8... External lead, 9... Lead tip, 10... Semiconductor element, 11... Electrode, 1
2...Through hole.
Claims (1)
レス加工後熱処理を行なつて残留歪を除く工程
と、エツチング加工によつて必要形状のリードを
形成する工程とを含むことを特徴とするリードフ
レームの製造方法。1. It is characterized by comprising the steps of press working a part of the metal plate, performing heat treatment after the press work to remove residual strain, and forming leads of the required shape by etching. Lead frame manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9732082A JPS589984A (en) | 1982-06-07 | 1982-06-07 | Production of lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9732082A JPS589984A (en) | 1982-06-07 | 1982-06-07 | Production of lead frame |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9249974A Division JPS5119970A (en) | 1974-08-12 | 1974-08-12 | Riidofureemuno seizohoho |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS589984A JPS589984A (en) | 1983-01-20 |
| JPS6211786B2 true JPS6211786B2 (en) | 1987-03-14 |
Family
ID=14189185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9732082A Granted JPS589984A (en) | 1982-06-07 | 1982-06-07 | Production of lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589984A (en) |
-
1982
- 1982-06-07 JP JP9732082A patent/JPS589984A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS589984A (en) | 1983-01-20 |
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