JPS6211223A - 液相エピタキシヤル成長装置 - Google Patents
液相エピタキシヤル成長装置Info
- Publication number
- JPS6211223A JPS6211223A JP60149244A JP14924485A JPS6211223A JP S6211223 A JPS6211223 A JP S6211223A JP 60149244 A JP60149244 A JP 60149244A JP 14924485 A JP14924485 A JP 14924485A JP S6211223 A JPS6211223 A JP S6211223A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substrate
- growth
- liquid phase
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007791 liquid phase Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 59
- 239000002994 raw material Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 description 66
- 239000010410 layer Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000003860 storage Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012047 saturated solution Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60149244A JPS6211223A (ja) | 1985-07-09 | 1985-07-09 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60149244A JPS6211223A (ja) | 1985-07-09 | 1985-07-09 | 液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211223A true JPS6211223A (ja) | 1987-01-20 |
| JPH0558563B2 JPH0558563B2 (enExample) | 1993-08-26 |
Family
ID=15471028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60149244A Granted JPS6211223A (ja) | 1985-07-09 | 1985-07-09 | 液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211223A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8821333B2 (en) | 2009-06-30 | 2014-09-02 | Jtekt Corporation | Planetary gear mechanism |
-
1985
- 1985-07-09 JP JP60149244A patent/JPS6211223A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8821333B2 (en) | 2009-06-30 | 2014-09-02 | Jtekt Corporation | Planetary gear mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0558563B2 (enExample) | 1993-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |