JPS62112166A - Manufacture of photoconductive sensitive body - Google Patents
Manufacture of photoconductive sensitive bodyInfo
- Publication number
- JPS62112166A JPS62112166A JP60253598A JP25359885A JPS62112166A JP S62112166 A JPS62112166 A JP S62112166A JP 60253598 A JP60253598 A JP 60253598A JP 25359885 A JP25359885 A JP 25359885A JP S62112166 A JPS62112166 A JP S62112166A
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- amorphous silicon
- regulating
- sih4
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 5
- 108091008695 photoreceptors Proteins 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 8
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 11
- 206010047571 Visual impairment Diseases 0.000 description 8
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用外野〉
本発明は、電子写真用像形成部材や原稿：π取装置等に
用いられる尤専電性怒光体の製造方法に閃する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Applications> The present invention is directed to a method for manufacturing a proprietary electrophotographic body used in electrophotographic image forming members, original document/π capture devices, and the like.
ぐもＣ来の技術〉
複写機や光電変換装置等の感光体としては、Ｓｅ、Ｃｄ
Ｓ、ＺｎＯ笠の無機光導電材ｆ１や、ＰＶＫ−ＴＮＦ等
に代表される有機先導電材１′１が知、Ｚれでいる。し
かしながら、これらの材料は、光導電材ｆｌとして要求
さｈる光恣度、分光感度、Ｓ／Ｎ比（明抵抗／′暗抵抗
）！Ｆの特性面や、耐久性、人体に対する安全性等の点
で満足できるものではなく、問題点に配Ｊ５・きしなが
らある程度条件を緩和した上で個々の状況に応じて使用
されているのが実情である。Technology from the past > Se, Cd, etc. are used as photoconductors for copying machines, photoelectric conversion devices, etc.
Inorganic photoconductive materials f1 such as S, ZnO caps, and organic leading conductive materials 1'1 typified by PVK-TNF and the like are well known. However, these materials do not meet the requirements for optical flexibility, spectral sensitivity, and S/N ratio (bright resistance/'dark resistance) as photoconductive materials. F is not satisfactory in terms of characteristics, durability, safety for the human body, etc., and it is used according to individual situations after relaxing the conditions to some extent while paying attention to the problems. is the reality.
一方、これへの問題点を解決する新しい材ｆ’ｌとして
非晶質シリコンを用いた）℃導電材料力吐ｌ：日さノＬ
、窩い尤恣度、高耐久性、１！！公害性等の長所が期（
Ｓされるため、近年盛んに研究が進められるようになっ
ている。On the other hand, amorphous silicon was used as a new material to solve this problem.
, flexibility, high durability, 1! ! The advantages of pollution, etc.
In recent years, research has been actively carried out because of S.
〈発明が解決しようとする問題点〉
非晶質シリコン製光導電材料Ｊ）問題点の一つとして残
像現象がある。この現象は、非晶質シリコンが価電子帯
及び１云導帯のバンド端に指数関数分布したパントチイ
ルを持つことに起因している。<Problems to be Solved by the Invention> Amorphous silicon photoconductive material J) One of the problems is the afterimage phenomenon. This phenomenon is caused by the fact that amorphous silicon has an exponentially distributed pantotile at the band edges of the valence band and the 1-band conduction band.
即ち、帯電露光を行なうと、過剰に生成されたフ４−ト
キャリアはパントチイルに捕獲され、このキャリアは長
時間放置しておくとフェルミレベルまで減衰するか、ま
たはバンドに励起された後、再結合して消滅する。しか
し、短時間に帯電露光を編返すと、次の帯電時の強い電
界によって捕獲されていたキャリアが解放される（Ｐｏ
ｏｌ−Ｆｒｃｎｋｅｌ効果）。That is, when charged exposure is performed, excessively generated foot carriers are captured by pantotiles, and if these carriers are left for a long time, they will attenuate to the Fermi level or be excited to a band and then be regenerated. combine and disappear. However, if the charging exposure is repeated in a short period of time, the carriers captured by the strong electric field during the next charging are released (Po
ol-Frnckel effect).
残像現象は、このキャリアが３光体表面まで移動し、電
荷の一部を打ち消すことにより起きると考えられ、非晶
質セレン系の材料の場きには電荷を打ち消すキャリア（
電：′ｉ−）のモビリティ（移動度）が十分率さいため
この現象は生じないが、非晶質シリコンでは電子のモビ
リティが正札よりも一般に大きいため、正帯電における
コピーサンプルでこの現象が現れるのである。The afterimage phenomenon is thought to occur when this carrier moves to the surface of the 3-photo object and cancels out a part of the charge. In the case of amorphous selenium-based materials, the carrier (
This phenomenon does not occur because the mobility of the electron ('i-) is sufficiently low; however, in amorphous silicon, the mobility of electrons is generally larger than that of the original, so this phenomenon appears in positively charged copy samples. It is.
本発明は、このような光疲労による残像現象を軽減する
ことを目的としてなされたものである。The present invention has been made for the purpose of reducing the afterimage phenomenon caused by such optical fatigue.
〈問題点を解決するための手段〉
上記の目的を達成するために、本発明基らは、感光体の
キャリア輸送層における電子のμτ積を減少させること
によって残像現象が軽減されることに着目し、キャリア
輸送層の生成条件についての検討を行なった結果、成膜
工程における８ ２ Ｈａガスの流量を規定することに
より電子のμτ積を制御できることを見出し、Ｒ２Ｈｉ
ガスとＳ ｉ Ｈ４ガスの流量比を３．３：・１０−７
以りとすることにより所期の目的を達成できることを確
認した。<Means for Solving the Problems> In order to achieve the above object, the present inventors focused on the fact that the afterimage phenomenon is reduced by reducing the μτ product of electrons in the carrier transport layer of the photoreceptor. As a result of examining the formation conditions of the carrier transport layer, it was discovered that the μτ product of electrons could be controlled by regulating the flow rate of 8 2 Ha gas in the film formation process, and the R2Hi
The flow rate ratio of gas and S i H4 gas is 3.3:・10-7
It was confirmed that the intended purpose could be achieved by doing the following.
〈実施例〉 以下、図示の実施例について説明する。<Example> The illustrated embodiment will be described below.
第１図は、非晶質シリコンの成膜装置の概略構造図てあ
り、この装置によりアルミドラ１１支持体上にグロー放
電によって非晶質シリコンの成膜を行なった０図におい
て、１は反応室、２はドラム支ｒＦｉ体、３は支持木用
ヒータ１．４ 、４ ’は電極、５はプラズマ分光用窓
、６は高周波電源、７は支持１本回転用モータ、８は排
気系の主バルブ、９はメカニカルブースターポンプ、１
０は油回転式真空ポンプ、１１はリーク用バルブ、１２
はガス導入管であり、これらは基本的には周知の成膜装
置と同じ物が使用可能である。Fig. 1 is a schematic structural diagram of an amorphous silicon film forming apparatus. In Fig. 0, an amorphous silicon film is formed on an aluminum drum 11 support by glow discharge using this apparatus, and 1 is a reaction chamber. , 2 is the drum support rFi body, 3 is the support tree heater 1.4, 4' is the electrode, 5 is the window for plasma spectroscopy, 6 is the high frequency power supply, 7 is the motor for rotating one support, 8 is the main part of the exhaust system Valve, 9 is mechanical booster pump, 1
0 is an oil rotary vacuum pump, 11 is a leak valve, 12
is a gas introduction pipe, which can basically be the same as the well-known film forming apparatus.
生成される非晶質シリコンの層は３層となっており、各
層の詳しい成膜条件を第１表に示す。Three layers of amorphous silicon were produced, and detailed film forming conditions for each layer are shown in Table 1.
ここで、第２層生成時に、水素希釈５［ｐｐ＋＊］のＢ
２ Ｈｓガスの流量を６〜２００［ｓｃｃ彌］の間で変
ｆヒさせ、Ｓ ｉ Ｈ４ガスの流星に対する比（Ｂ ２
Ｈ＆／ Ｓ ｉ Ｈ４）をｌＸｌ０−’−３．３Ｘ１
０−’としている。又、この時の総流星が９００［ｓｃ
ｃｍ］になるようにＩＩ２ガスの流量を調整した。Here, when generating the second layer, B with hydrogen dilution of 5 [pp+*]
2 The flow rate of Hs gas was varied between 6 and 200 [scc], and the ratio of S i H4 gas to the meteor (B 2
H&/S i H4) lXl0-'-3.3X1
It is set as 0-'. Also, the total number of meteors at this time was 900 [sc
The flow rate of II2 gas was adjusted so that
一直上人一
）１１）第１層のｎ、ｏ、ガスは■４□ガス希釈で濃度
１０００［ｐｐｎ’１２） 第２屑のＢ 、 Ｈ，ガス
はＩｔ、ガス希釈で濃度 ５［四ＩＩｌ］このようにし
て製作されたドラム感光体について、ＸｅｒｏＢｒａｐ
ｌ＋ｉｃ法による光減衰からｌ−１ｅｃｂＬの式を用い
て電子のμτ積を求めた結果を第２図に示す。横軸は流
量比（１１２ＩＩｓ／ Ｓ ｉ ＩＩ Ｊｔ）であり、
流量比が大きくなるにつれてμτ績は低減してしするこ
とかわかる。Ichichojonin 1) 11) The n, o, and gases in the first layer are ■4□ and the concentration is 1000 [ppn'12] B, H, and gas in the second layer are It, and the concentration is 5[4IIl when diluted with the gas] ] Regarding the drum photoreceptor manufactured in this way,
FIG. 2 shows the results of determining the μτ product of electrons from the optical attenuation by the l+ic method using the equation l−1ecbL. The horizontal axis is the flow rate ratio (112IIs/S i II Jt),
It can be seen that as the flow rate ratio increases, the μτ performance decreases.
又、このドラム感光体を用いて正帯電によるコピーサン
プルを（を成し、残像現竿を評価した結果を第２表に示
す。評価条１′１−は、ドラム周速２５４．４［ｃｍ／
５ｃａ１．コロナ電流９０［）ｌＡ］、バイアス電圧１
６４［Ｖｌであり、この時の初期表面電位は６５０〜５
００［Ｖｌであった。Further, using this drum photoreceptor, a copy sample was made by positive charging, and the results of evaluating the afterimage development rod are shown in Table 2. /
5ca1. Corona current 90 [)lA], bias voltage 1
64[Vl, and the initial surface potential at this time is 650~5
It was 00 [Vl.
一茅ｔ１糺−
ただし、Ｘ：戎（’ＩＡ現象がはっきり現れる△：残像
現象が僅かに現れる
○：残像現象が全く現れない
以」二の結果、流量比が大きく４−）てμτ琵が減少す
るにつれて残ｆ象現象が生じにくくなり、流１比が３．
３ｘｌＯ”以上であればほぼ望ましい結果がｔ）基゛、
れ、１１１に６．７ｘｌＯ−７以上では残像現象は全く
現れず、Ｕト晶質シリコン製尤導電材料の問題点の一つ
である残像現象を解決できたことがわかる。However, as a result of the second, the flow rate ratio is large and μτ is As the flow rate decreases, the residual f-effect phenomenon becomes less likely to occur, and the flow 1 ratio becomes 3.
If it is 3xlO” or more, the desired result is based on t)
The afterimage phenomenon does not appear at all when 111 is 6.7xlO-7 or more, and it can be seen that the afterimage phenomenon, which is one of the problems of the highly conductive material made of crystalline silicon, can be solved.
〈発明の効果）・
」−述の左開から明らかなように、本発明は、光導電性
非晶質シリ−１ンの成膜工程において、Ｂ２ｌｌ５／′
膓１−Ｉ 、比を３．３Ｘ１０−’以−１−に保−）で
キャリア輸送層を生成することにより、残像現虫をなく
したちのである。＆ｔ・−ノで、本発明は、高感度、１
すｉ′ｉＪ久性、無公害性等のすぐれた特長を存する非
晶πシリコン製光導電材ｆ１を用いたＳ光体の実用１ヒ
の促進に極めて有効である。<Effects of the Invention> - As is clear from the left-hand side of the above, the present invention has the advantage that B2ll5/'
By forming a carrier transport layer with a ratio of 3.3 x 10-1 or higher, the afterimage was eliminated. &t・-no, the present invention has high sensitivity, 1
This is extremely effective in promoting the practical use of S light bodies using the amorphous π silicon photoconductive material f1, which has excellent features such as durability and non-polluting properties.
・１１図面の簡ｊ！１な説明
第１１１は、本発明を実施するための′Ａ置σ）概略構
造図、
第２図は、Ｂｚ）ｉ、／ＳｉＨ，比と電子のμτ積との
関係を示す図である。・11 simple drawings! 1. Explanation No. 111 is a schematic structural diagram for carrying out the present invention, and FIG. 2 is a diagram showing the relationship between the Bz)i,/SiH ratio and the μτ product of electrons.
１・・・反応室 、 ２・・・ドラム支持体４．４゛・
・・電極、 ６・・高周波電源１２・・・ガス導入管1...Reaction chamber, 2...Drum support 4.4゛・
...electrode, 6..high frequency power supply 12...gas introduction tube
Claims (1)
の製膜工程において、Ｂ＿２Ｈ＿６ガスの流量比を３．
３×１０＾−＾７以上に保ってキャリア輸送層の生成を
行なうことを特徴とする光導電性感光体の製造方法。(1) In the process of forming a film of photoconductive amorphous silicon used as a photoreceptor, the flow rate ratio of B_2H_6 gas is set to 3.
A method for producing a photoconductive photoreceptor, characterized in that a carrier transport layer is generated while maintaining a carrier transport layer of 3×10^-^7 or more.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60253598A JPS62112166A (en) | 1985-11-11 | 1985-11-11 | Manufacture of photoconductive sensitive body |
| FR8615607A FR2590077A1 (en) | 1985-11-11 | 1986-11-07 | Method of manufacturing a photoconductor element |
| DE19863638200 DE3638200A1 (en) | 1985-11-11 | 1986-11-08 | METHOD FOR PRODUCING PHOTO-CONDUCTIVE COMPONENTS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60253598A JPS62112166A (en) | 1985-11-11 | 1985-11-11 | Manufacture of photoconductive sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62112166A true JPS62112166A (en) | 1987-05-23 |
Family
ID=17253604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60253598A Pending JPS62112166A (en) | 1985-11-11 | 1985-11-11 | Manufacture of photoconductive sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62112166A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6379852B2 (en) | 1996-09-11 | 2002-04-30 | Canon Kabushiki Kaisha | Electrophotographic light-receiving member |
-
1985
- 1985-11-11 JP JP60253598A patent/JPS62112166A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6379852B2 (en) | 1996-09-11 | 2002-04-30 | Canon Kabushiki Kaisha | Electrophotographic light-receiving member |
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| JPS6063960A (en) | Photoconductive member | |
| JPS5962865A (en) | Electrophotographic receptor | |
| JPS61201480A (en) | Manufacture of photoconductor | |
| JPS6373264A (en) | Electrophotographic sensitive body | |
| JPS59131941A (en) | Amorphous silicon photosensitive body | |
| JPS59185344A (en) | Photoconductive member | |
| JPS6194055A (en) | Photoconductive member | |
| JPS62156665A (en) | Photosensitive body | |
| JPS61126558A (en) | Photoconductive material | |
| JPS62151856A (en) | Photoconductive member | |
| JPS60112047A (en) | Photoconductive member |