JPS5962865A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS5962865A
JPS5962865A JP17432182A JP17432182A JPS5962865A JP S5962865 A JPS5962865 A JP S5962865A JP 17432182 A JP17432182 A JP 17432182A JP 17432182 A JP17432182 A JP 17432182A JP S5962865 A JPS5962865 A JP S5962865A
Authority
JP
Japan
Prior art keywords
amorphous silicon
photoconductive layer
layer
dark resistance
electrophotographic photoreceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17432182A
Other languages
Japanese (ja)
Inventor
Katsumi Suzuki
克己 鈴木
Hidekazu Kaga
英一 加賀
Genichi Adachi
元一 安達
Masao Obara
小原　正生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17432182A priority Critical patent/JPS5962865A/en
Publication of JPS5962865A publication Critical patent/JPS5962865A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain an electrophotographic receptor having an excellent electrostatic charging characteristic, dark attenuation characteristic and photosensitive characteristic by providing amorphous silicon members having the optical band gap and dark resistance larger than those of an amorphous silicon photoconductive layer on the top and bottom of said photoconductive layer. CONSTITUTION:The 1st and 2nd amorphous silicon members 2, 4 have dark resistance rhoD=10<13>OMEGAcm or above, and the implantation of the surface electric charge of a positive polarity and the electric charge of a negative polarity induced in a substrate 1 to an amorphous photoconductive layer 3 is prohibited respectively. Light is hardly absorbed in the member 4 having large optical band gap Egopt and the light absorption takes place in the surface layer of the layer 3 and generates electron and hole which are implanted to the members 2, 4 thereby neutralizing the surface charges thereof. As a result, the surface charge is effectively attenuated.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はたとえは電子複写機や電子プリンタ等に用いら
れる電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electrophotographic photoreceptor used, for example, in an electronic copying machine or an electronic printer.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来電子写真感光体の光導電層を構成する材。 A material that makes up the photoconductive layer of conventional electrophotographic photoreceptors.

料として、Ｃｄ５ＸＺｎＯ１Ｓｅ　、　　Ｓｅ　−Ｔｅ
、アモルファスシリコン（ａ−８ｉ）等の無機材料や、
ポリ−Ｎ−ビニルカルバゾール（ＰＶＣ２）、トリニト
ロフルオレノン（ＴＮＦ　）等の有機材料が知られてい
る。しかしながら、これ等光導電材料を使用するには材
料として色々と問題があり、システムの特性をある程度
犠牲にして状況に応じてこれらの材料を使いわけしてい
るのが現状である。たとえば、Ｓｅ、ＣｄＳは本質的に
は人体に対して有害な材料であり、これらを製造するに
あたっては安全対策上特別の配慮が必要でそのだめ製造
装置が複雑になったシその製作に余分な費用を必扱とす
るし、またＳｅなどは回収の必要もありその費用も材料
コストにはねかえってくる。１だ、特性的にもたとえば
Ｓｅ（またはＳｅ　−Ｔｅ系）では、結晶化温度が６５
℃と低いだめ複写を繰り返し行っている間に結晶化が起
り、残像その他の点で実用上問題が生じて来易く、結局
寿命が短いという欠点がある。また、ＺｎＯＶｃついて
は、利旧物件上、酸化還元が起りやすく環境唇囲気の影
響を著しくうけ易いだめに信頼性が低いという問題があ
る。さらに、有機光導電材料については、ｐｖｃやＴＮ
Ｆ等は、最近発がん性の疑いがもだれだりしており、丑
だ有機材料であるために熱安定性、耐摩耗性が悪くした
がって製品ライフｌｒｇ＜豆いという短所を有している
。アモルファスシリコン（ａ−８ｔ）ｉ、ｊ材料として
近年注目を集め、太陽電池への応用が活発に行なわれて
いるが、その他の応用として電子写真感光体の光導電材
料としても検討がなされている。このアモルファスシリ
コン材料は電子写真用としては前述の他の羽村にはない
長所を持っている。すなわち、無公害の材料で、従来の
材料より長波長域まで分光感度があり、根面硬度が高く
耐摩耗性に優れている等の長所で、電子写真用としても
期待されている材料である。As materials, Cd5XZnO1Se, Se-Te
, inorganic materials such as amorphous silicon (a-8i),
Organic materials such as poly-N-vinylcarbazole (PVC2) and trinitrofluorenone (TNF) are known. However, there are various problems when using these photoconductive materials, and the current situation is that these materials are used depending on the situation, sacrificing the characteristics of the system to some extent. For example, Se and CdS are essentially harmful materials to the human body, and special considerations for safety measures are required when manufacturing them, which makes the manufacturing equipment complex and requires unnecessary manufacturing. In addition, there is a need to recover Se, etc., and that cost is added to the material cost. 1. In terms of characteristics, for example, in Se (or Se-Te system), the crystallization temperature is 65
Crystallization occurs during repeated copying at low temperatures, which tends to cause afterimages and other practical problems, resulting in a short service life. Furthermore, ZnOVc has the problem of low reliability because it is easily oxidized and reduced due to its old properties and is extremely susceptible to the influence of environmental conditions. Furthermore, regarding organic photoconductive materials, PVC and TN
F and the like have recently been suspected of being carcinogenic, and because they are organic materials, they have poor thermal stability and abrasion resistance, and therefore have the disadvantage that the product life is short. Amorphous silicon (a-8t) has attracted attention in recent years as a material and is being actively applied to solar cells, but it is also being considered as a photoconductive material for electrophotographic photoreceptors for other applications. . This amorphous silicon material has advantages not found in the other Hamura materials mentioned above for use in electrophotography. In other words, it is a non-polluting material, has spectral sensitivity in a longer wavelength range than conventional materials, has high root surface hardness, and has excellent wear resistance, making it a promising material for electrophotography. .

ところで、アモルファスシリコンを用いた電子写真感光
体は、導電性基板上にアモルファスシリコン層をＳｉＨ
４ガスのダロー放電分解によシ成膜してなる。しかしな
がら、純５ｊＨ４ガスを用いて成膜された水素化アモル
ファスシリコン（ａ　−Ｓｊ；Ｈ）膜は暗中での比抵抗
が１０１１０ｃｍと小さいだめ、電子写真７０ロセス中
の直流コロナ帯電を行なっても充分な表面電位を保持す
るととができない。また、ＳｉＨガスと０２ガスの混合
ガスを用いて成膜されたアモルファスシリコン（ａ　−
Ｓｊ　ｊＩ＋Ｏ）膜は０２濃度をコントロールするとと
によシ暗中での抵抗を１０１３ｂ以上にするξとができ
るか、光照射時の抵抗が１０１１わ以上になってしまい
、充分な光感度が得られないため、電子写真用としては
使用できない。By the way, electrophotographic photoreceptors using amorphous silicon are made by forming an amorphous silicon layer on a conductive substrate using SiH.
The film is formed by Darrow discharge decomposition of 4 gases. However, the hydrogenated amorphous silicon (a -Sj; If the surface potential is maintained at a certain level, it cannot be sharpened. In addition, amorphous silicon (a-
If the 02 concentration of the Sj jI+O) film is controlled, the resistance in the dark can be increased to 1013b or more, or the resistance when irradiated with light becomes 1011b or more, making it impossible to obtain sufficient photosensitivity. Therefore, it cannot be used for electrophotography.

〔発明の目的〕[Purpose of the invention]

本発明は上記↓」１情にもとづいてなされたもので、そ
の目的とするところは、帯電特性、暗減衰特性および光
感度特性に優れる電子写真感光体を提供することにある
。The present invention has been made based on the above-mentioned circumstances, and its object is to provide an electrophotographic photoreceptor having excellent charging characteristics, dark decay characteristics, and photosensitivity characteristics.

〔発明の概要〕[Summary of the invention]

本発明は、導電性基板上にアモルファスシリコン光導電
性層を積Ｊクツしてなる電子写真感光体において、上記
アモルファスシリコン光１性層の上下に、このアモルフ
ァスシリコン光ＰｊＪ　ｎＬ性層よりも光学的バンドギ
ャップが大きく、かつ暗抵抗が大きいアモルファスシリ
コン部材を設け／ζことを特徴とするものである。The present invention provides an electrophotographic photoreceptor in which an amorphous silicon photoconductive layer is laminated on a conductive substrate. It is characterized by providing an amorphous silicon member with a large target bandgap and a large dark resistance.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を図面を参照しながら説明する
。８ＰＪ１図中１は導′ｒＥ性基板で、この導電性基板
１上には第１のアモルファスシリコン部月２、アモルフ
ァスシリコン光導電性層３および第２のアモルファスシ
リコン部材４がこの順に積層されている。上記アモルフ
ァスシリコン光導電性層３は層厚が５角ｎ以上、光学的
バンドギャップが１．６〜１．８ｅＶ、暗抵抗が１０９
ｎｃｍ以上たとえば１０１１ｒｋ、Ｍ＋、光照射暗抵抗
が波長Ｇ　５０　ｎｎｎ　、　　１０１５ｐｈｏｔｏｎ
／ｃｎｚ２ｓｅｃの光を照射したとき１０８Ω７７１以
下たとえば１０’に胎ｎとなっている。−１だ、上記第
１および第２のアモルファスシリコン部材２，４は層厚
が５０〜２０００Ｘ　。An embodiment of the present invention will be described below with reference to the drawings. 8PJ1 In the figure, 1 is a conductive substrate, and on this conductive substrate 1, a first amorphous silicon member 2, an amorphous silicon photoconductive layer 3, and a second amorphous silicon member 4 are laminated in this order. There is. The amorphous silicon photoconductive layer 3 has a layer thickness of 5 square n or more, an optical band gap of 1.6 to 1.8 eV, and a dark resistance of 109
ncm or more For example, 1011rk, M+, light irradiation dark resistance is wavelength G 50 nnn, 1015 photon
When irradiated with light of /cnz2sec, the resistance is less than 108Ω771, for example, 10'. -1, the first and second amorphous silicon members 2 and 4 have a layer thickness of 50 to 2000X.

光学的バンドギャップが２０〜４．ＯＶ、暗抵抗が］、
Ｑ”、Ｑｚ以上たとえば１０”ｒｈとなっている。Optical bandgap is 20-4. OV, dark resistance],
Q'', Qz or more is, for example, 10''rh.

しかして、このように＋１９成された電子写真感光体に
正極性の直流コロナチャージャによって正稜件の表面電
位を印加すると、第１と第２のアモルファスシリコン部
材２　、４　ハ暗ｆｃ　抗ρ。−１，０１５社以上であ
るから、正極性の表面電荷および基板１に誘起された負
極性の電荷のアモルファスシリコン光導′屯性層３への
注入はそれぞれ阻止され、光分外表面電位がイｉＪられ
る。Therefore, when a positive surface potential is applied to the electrophotographic photoreceptor thus made +19 by a positive direct current corona charger, the first and second amorphous silicon members 2 and 4 have a dark fc anti-ρ. -1,015 or more, the injection of positive surface charges and negative charges induced in the substrate 1 into the amorphous silicon photoconducting layer 3 is inhibited, and the extra-optical surface potential is iJ is done.

ついで、光像照射を行なうと、光学的・ぐンドギャッｆ
　Ｅｇｏｐ廿の大きい表面の第２のアモルファスシリコ
ン部材４ではほとんど光が吸収されず、光学的バンドギ
ャップＥｇｏｐｔの小さいアモルファスシリコン光導電
性層３の表面層で光吸収が起こり、対をなす負極性と正
極性のキャリアすなわち１Ｌ子と正孔を発生する。この
光で誘起されたキャリアのうち負極性のキャリアは表面
の正電荷に引かれて表面層へ向かい、正極性のキャリア
は基板へ向かう。表面および基板１上の第１と＆４２の
アモルファスシリコン部材２゜４ｔよ３００Ｘ、９００
Ｘの）（（−膜であるから、発生した負４ｔｉＣ性と正
極１１三のキャリアは第１と第２のアモルファスシリコ
ン部Ａ７（２，４に注入されてそれぞれ表面電荷を中和
し、その結ＭＬ表面Ｗｊ荷は効果的に減温する。Then, when light image irradiation is performed, optical gundogya f
Almost no light is absorbed in the second amorphous silicon member 4 having a surface with a large Egopt, and light absorption occurs in the surface layer of the amorphous silicon photoconductive layer 3 with a small optical bandgap Egopt, and the negative polarity of the pair Positive carriers, ie, 1L atoms, and holes are generated. Among the carriers induced by this light, negative carriers are attracted by the positive charges on the surface and head towards the surface layer, while positive carriers head towards the substrate. First and &42 amorphous silicon members 2°4t on the surface and substrate 1, 300X, 900
X) The temperature of the condensed ML surface Wj is effectively reduced.

次に実験例を説明する。寸ず、導電性基板であるＡｔ−
ドラム基板１を真空チャンバー内に設け、チャンバー内
を１０−６ｔ　ｏ　ｒ　ｒまで真空にひくとともにＡｔ
ドラム基板１を２ｏｏ℃に加熱しておく。ついで、流）
、；比で０２．／　５ｉｌＩ４　＝　４ヴの混合ガスを
チャンバー内へ２ｉｉ人し、圧力を０Ａｔｏｒｒの状態
に保ってＡｔドラム基板に対向した電極Ｋ　１３．５６
　ＭＨｇのラジオフレクエンシーパワー２５Ｗを印加し
、３分間（約９０ｏλ）第１のアモルファスシリコン部
材（ａ　−Ｓｉ：Ｈ＋　０膜）　２　全成膜する。つい
で、０２ガスを止めて純５ＩＨ４；／７スをパワーだけ
を１００Ｗに変えて５時間（約１５μ７ｎ）アモルファ
スシリコン光導電性層（ａ−３ｉ；Ｈ膜）３を成膜する
。ついで、再度ｏ２ガス全導入し、流量比で０２／５ｉ
Ｈ４＝４％の混合ガスを４入し、第２のアモルファスシ
リコン部材（ａ−Ｓｉ；Ｈ＋Ｏ膜）４を３００Ｘ成膜す
る。各膜の光学的パンドギャッ７°Ｅｇｏｐｔ　、暗抵
抗ρＤおよび光照射時抵抗ρ、１１は予め別々に作成さ
れたザンノ０ルで測定すると、アモルファスシリコン光
導１１ｚ性ｆｉ　（ａ−８ｔ；Ｈ膜）３はＥｇｏｐｔ　
＝　１．７８　ｅＶ　％ρ■）＝　１０　　ｎｒｍ、ρ
、ｈ＝１０．０ｍであり、第１と第２のアモルファスシ
リコン部材（ａ　−Ｓｌ　；Ｈ＋０膜）２．４はＥｇｏ
ｐｔ　＝　２．６　ｅＶ　、ρｏ　＝　１０　”Ｋｋｍ
　。Next, an experimental example will be explained. At-
The drum substrate 1 is placed in a vacuum chamber, the chamber is evacuated to 10-6 tons, and At
The drum substrate 1 is heated to 20°C. Next, Naru)
,;02. in ratio. / 5ilI4 = 4V of mixed gas was introduced into the chamber, and the pressure was maintained at 0Atorr, and the electrode K was placed opposite the At drum substrate.
A radio frequency power of 25 W of MHg is applied to form the entire first amorphous silicon member (a-Si:H+0 film) 2 for 3 minutes (approximately 90oλ). Next, the 02 gas was stopped, and only the power of the pure 5IH4;/7 gas was changed to 100W to form an amorphous silicon photoconductive layer (a-3i; H film) 3 for 5 hours (about 15μ7n). Then, fully introduce the O2 gas again, and the flow rate ratio is 02/5i.
Four mixed gases of H4=4% are introduced, and a second amorphous silicon member (a-Si; H+O film) 4 is formed at 300X. The optical breadth gap 7°Egopt, dark resistance ρD, and resistance during light irradiation ρ, 11 of each film were measured using a Zanol 0 previously prepared separately. is Egopt
= 1.78 eV %ρ■) = 10 nrm, ρ
, h=10.0m, and the first and second amorphous silicon members (a-Sl; H+0 film) 2.4 are Ego
pt = 2.6 eV, ρo = 10”Kkm
.

ρｐｈ−１０１２齢である。このような電子写真感光体
を電子写真ノロセスに適用すると、正極性の直流コロナ
チャーツヤ−によって＋５００Ｖ以上の表面電位を得る
ことができだ。まだ、光像照射による表面電位の光減衰
を半減露光力にで測定したところ、０．８／！、、ｓ、
の高感度を示しだ。以上のような良好な帯電特性および
高感度を示すだめの条件は、アモルファスシリコン光導
電性層（ａ−３ｉ；Ｈ膜）３のＥｇｏｐｔが１．６〜１
．８　ｅＶ　。It is ρph-1012 years old. When such an electrophotographic photoreceptor is applied to an electrophotographic process, a surface potential of +500 V or more can be obtained by a positive DC corona charger. However, when the optical attenuation of the surface potential due to optical image irradiation was measured at half the exposure power, it was found to be 0.8/! ,,s,
It shows high sensitivity. The conditions for exhibiting good charging characteristics and high sensitivity as described above are that the Egopt of the amorphous silicon photoconductive layer (a-3i; H film) 3 is 1.6 to 1.
．． 8 eV.

ρＤか１０”、０ｍ以上、ρ、ｈが１．　Ｏｎｔｙｎ以
下、第１と第２のアモルファスシリコン部材（＋１−　
Ｓｉ：Ｈ。ρD is 10", 0m or more, ρ, h is 1. Ontym or less, the first and second amorphous silicon members (+1-
Si:H.

０月！、り２．４のＥｇｏｐｔが２．０〜４．　ＯｅＶ
　、ρＤが１０１３（ト）１７以上、膜厚が５０Ｘ〜２
０００Ｘであることが種々のザンプルの測定結果から判
明している。なお、その測定結果を第２図〜第４図に示
す。また、第１および第２のアモルファスシリコン部材
であるａ−３ｉ；Ｈ，０膜の代わりにＥｇｏｐｔが２〜
４ｅＶでρＤが１０１３ｎｎｎ以上のａ−３ｌ；ＩＩ、
Ｃ膜またはａ　　Ｓ　ｒ　；　ＩＩ＋　Ｎ　ＩＩ！まだ
はこれらの組合わされたものを用いても同様の効果が得
られる。October! , Egopt of ri 2.4 is 2.0 to 4. OeV
, ρD is 1013 (g) 17 or more, film thickness is 50X ~ 2
000X from the measurement results of various samples. The measurement results are shown in FIGS. 2 to 4. Moreover, instead of the a-3i;H,0 film, which is the first and second amorphous silicon member, Egopt is 2 to 2.
a-3l with ρD of 1013 nnn or more at 4 eV; II,
C membrane or a S r ; II+ N II! Similar effects can also be obtained by using a combination of these.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、導電性基板上にア
モルファスシリコン光導電性層を積層してなる電子写真
感光体において、上記アモルファスシリコン光導電性層
の上下に、このアモルファスシリコン光導電性層よりも
光学的バンドギャップが大きく、かつ暗抵抗が大きいア
モルファスシリコン部材を設けだから、優れた帯電特性
、暗減衰特性および光感度特性が得られる等優れた効果
を奏する。As explained above, according to the present invention, in an electrophotographic photoreceptor formed by laminating an amorphous silicon photoconductive layer on a conductive substrate, the amorphous silicon photoconductive layer is formed above and below the amorphous silicon photoconductive layer. Since an amorphous silicon member having a larger optical bandgap and larger dark resistance than the layer is provided, excellent effects such as excellent charging characteristics, dark decay characteristics, and photosensitivity characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す断面図、第２図はアモ
ルファスシリコン光導電性層−の抵抗と表面電位および
感度とのそれぞれの関係を示す図、第３図は第１．第２
のアモルファスシリコン部利の暗抵抗および光学的バン
ドギャップと表面電位および感度とのそれぞれの関係を
示す図、第４図は第１．第２のアモルファスシリコン部
材の厚さと表面電位および残留電位とのそれぞれの関係
を示す図である。 １・・・２！ｉ電性基板、２・・・第１のアモルファス
シリコンＢｌ＜　’７．３・・・アモルファスシリコン
光導電層、４・・・第２のアモルファスシリコン部材。 第１図 茅２　図 ｉ・１ｇ畢（、醍、、、　１０５１０６ｔｏ”’　　１
０７−ｆｉル　）、ｌ−り」ンＬ！　　’ｌＹ４（ＶＧ
１５ｕｍ）ｃＪＬｆｉ’Ｌ（Ａｃｍ）＜＄　１ｈ°Ｊ　
４２　ｆｉ　ｉ”ｂ＋Ｌ＝７アス；　Ｉ＋−）　４ｎ丁
ｐｏ＝　１ｄｋｃｍ、Ｅｇｏｐｔ＝２５ｅｖ第３図 ′：ｌ３６９パ」〜′マーゲＥｇｏｐｔ２．０　　　　
　　２．３　　　　　２，５５　　　　　２．Ｂ　　　
　　、！；ＬＶ”！ＩＦ　１．％２ｔｔ＋４ｂレフフス
”Ａｔ”Ａｎ＄４千’Ｓａ２・、＋ｆｄ６９ノ、〉）Ａ
＼・、フ゛）　　　　　　　　　　　　　（イ２，１−
７，１ンｑつ４ｉンｐ１．７ｊ４ＰＯ＝ｉｏ”ｉｃｍ、
、／’ｐｈ＝１０’ｎｃｍＪ４．１５ｑｒｎ）１、事件
の表示 特願昭５７−１７４３２１号 ２、発明の名ね・ 電子与真感光体 ３、補正をする者 事件との関係　　時的　出願人 （３０７）　　東京乏曲電気株式会社 ４、代理人 ７、補正の内容 明細書、第４頁第６行目の「耐摩耗性」を「可湿性」と
訂正する。FIG. 1 is a cross-sectional view showing one embodiment of the present invention, FIG. 2 is a view showing the relationship between the resistance, surface potential, and sensitivity of an amorphous silicon photoconductive layer, and FIG. 3 is a cross-sectional view showing one embodiment of the present invention. Second
FIG. 4 is a diagram showing the relationship between the dark resistance and optical bandgap of the amorphous silicon region and the surface potential and sensitivity, respectively. FIG. 7 is a diagram showing the relationship between the thickness, surface potential, and residual potential of the second amorphous silicon member. 1...2! i-conductive substrate, 2... first amorphous silicon Bl<'7.3... amorphous silicon photoconductive layer, 4... second amorphous silicon member; Fig. 1, 2 Fig. i・1g畢(、Mai、、、 105106to"' 1
07-fil), l-ri'n L! 'lY4(VG
15um)cJLfi'L(Acm)<$1h°J
42 fi i"b+L=7as; I+-) 4ntopo=1dkcm,Egopt=25evFig.3':l369pa'~'MargeEgopt2.0
2.3 2,55 2. B
,! ;LV"!IF 1.%2tt+4bLevfus"At"An$4,000'Sa2・,+fd69ノ,〉)A
\・, ゛) (I2,1-
7.1inq4inp1.7j4PO=io”icm,
, /'ph=10'ncmJ4.15qrn) 1, Indication of the case Japanese Patent Application No. 174321/1982 2, Name of the invention/electronic photoreceptor 3, Person making the amendment Relationship with the case Time Applicant ( 307) Tokyo Hokyoku Denki Co., Ltd. 4, Agent 7, amended statement of contents, page 4, line 6, ``wear resistance'' is corrected to ``moisturability''.

Claims (7)

【特許請求の範囲】[Claims] （１）４電性基板上にアモルファスシリコン光導電性層
を積層してなる電子写真感光体において、上記アモルフ
ァスシリコン光導電性層の上下に、このアモルファスシ
リコン光導電性層よりも光学的・２ンドギヤツプが大き
く、がっ暗抵抗が大きいアモルファスシリコン部材を設
けたことを特徴とする電子写真感光体。(1) In an electrophotographic photoreceptor in which an amorphous silicon photoconductive layer is laminated on a 4-conductive substrate, optically higher An electrophotographic photoreceptor characterized by comprising an amorphous silicon member having a large gap and a high dark resistance. （２）　　アモルファスシリコン光導電性層は光学的バ
ンドギャップが１．６〜ｉ、８ｅＶであり、暗抵抗が１
０９ｈ以上である特許請求の範囲第１項記載の電子写真
感光体。(2) The amorphous silicon photoconductive layer has an optical band gap of 1.6-i, 8 eV and a dark resistance of 1
The electrophotographic photoreceptor according to claim 1, which has a photoreceptor of 0.09 h or more. （３）　　アモルファスシリコン部材ハ光学的バンドギ
ャップが２．０〜４．ＯｅＶであシ、暗抵抗が１０　　
ｎｃｒｎ以上である特許請求の範囲第１項まだは第２項
記載の１１コ１子写真感光体。(3) The amorphous silicon member has an optical band gap of 2.0 to 4. OeV, dark resistance 10
The 11-child photographic photoreceptor according to claim 1 or claim 2, wherein the photoreceptor has a molecular weight of at least ncrn. （４）　　アモルファスシリコン光導電性層は光照射暗
抵抗が波長６５０　ｎｍ　、　］、　０１５ｐｈｏｔｏ
ｎ／ａｎ”ｓｅｃの光を照射したとき、１０”ｎｔｙｎ
以下である特許請求の範囲第１項ないし第３項のいずれ
かに記載の電子写真感光体。(4) The amorphous silicon photoconductive layer has a dark resistance when irradiated with light at a wavelength of 650 nm, ], 015photo
When irradiated with light of n/an”sec, 10”ntyn
An electrophotographic photoreceptor according to any one of claims 1 to 3 below. （５）　　アモルファスシリコン光導電性層は暗抵抗が
１　Ｏｎｏｎ、光照射暗抵抗が波長６５０　ｎｍ　。 １０１５ｐｈｏｔｏｎ／ｃｎ１２ｓｅｃの光を照射した
とき、１０．０ｍである特許請求の範囲第１項ないし第
４項のいずれかに記載の電子写真感光体。(5) The amorphous silicon photoconductive layer has a dark resistance of 1 Onon, and a light irradiation dark resistance of 650 nm. The electrophotographic photoreceptor according to any one of claims 1 to 4, which has a length of 10.0 m when irradiated with light of 1015 photons/cn12 sec. （６）　　アモルファスシリコン部材は層厚が５０〜２
０００Ｘである特許請求の範囲第１項ないし第５項のい
ずれかに記載の電子写真感光体。(6) The layer thickness of the amorphous silicon member is 50~2
000X, the electrophotographic photoreceptor according to any one of claims 1 to 5. （７）　　アモルファスシリコン光導電性層は層厚が５
μ？ｎ以上である特許請求の範囲第１項ないし第６項の
いずれかに記載の電子写真感光体。(7) The amorphous silicon photoconductive layer has a layer thickness of 5
μ? The electrophotographic photoreceptor according to any one of claims 1 to 6, wherein the number is n or more.
JP17432182A 1982-10-04 1982-10-04 Electrophotographic receptor Pending JPS5962865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17432182A JPS5962865A (en) 1982-10-04 1982-10-04 Electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17432182A JPS5962865A (en) 1982-10-04 1982-10-04 Electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS5962865A true JPS5962865A (en) 1984-04-10

Family

ID=15976595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17432182A Pending JPS5962865A (en) 1982-10-04 1982-10-04 Electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5962865A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160754A (en) * 1985-01-09 1986-07-21 Hitachi Ltd Electrophotographic sensitive body

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717952A (en) * 1980-07-09 1982-01-29 Oki Electric Ind Co Ltd Electrophotographic receptor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717952A (en) * 1980-07-09 1982-01-29 Oki Electric Ind Co Ltd Electrophotographic receptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160754A (en) * 1985-01-09 1986-07-21 Hitachi Ltd Electrophotographic sensitive body

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