JPS62111480A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPS62111480A
JPS62111480A JP60251520A JP25152085A JPS62111480A JP S62111480 A JPS62111480 A JP S62111480A JP 60251520 A JP60251520 A JP 60251520A JP 25152085 A JP25152085 A JP 25152085A JP S62111480 A JPS62111480 A JP S62111480A
Authority
JP
Japan
Prior art keywords
photovoltaic
substrate
series
shape
photovoltaic elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60251520A
Other languages
Japanese (ja)
Inventor
Toshihiro Nomura
敏宏 野村
Yasushige Murata
村田 安繁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60251520A priority Critical patent/JPS62111480A/en
Publication of JPS62111480A publication Critical patent/JPS62111480A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To simplify a constitution, to make an effective area large and to improve manufacturing efficiency, by connecting a plurality of photovoltaic elements, which form a continuous annular shape without cut parts, in series on a substrate. CONSTITUTION:A light-transmitting insulating substrate 1 is formed in a disk shape. On the main surface of the substrate, a transparent electrode 2, an amorphous semiconductor layer 3 and a back surface electrode 4 are formed and laminated in this order. Photovoltaic elements A and B in an continuous annular shape without cut parts are arranged at the inside and outside in a concentric pattern. The inner and outer photovoltaic elements A and B are connected in series.

Description

【発明の詳細な説明】 (産業上の利用分野: 本発明は複数の光起電力素子を直列接続し゛(なる光起
電力装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a photovoltaic device in which a plurality of photovoltaic elements are connected in series.

C従来技術〕 現在の先起電力累Tは使用材料、構造等に依り若干の差
異はあるが5その開Id1.″11!圧は太陽光下でo
、G 〜0.8  (V) 42度である。従ッ(、屹
電i!等の代替エネルギーとして用いるためには複数の
光起電力素子を直列接続する必要がある0通常光起電力
柔7はその面積効率を高く維持し、また製造能率の面か
ら考REして矩形状に形成されており、これら各光起電
力素子を直線的に配列した伏ぞで直列接続1も構成が採
られている。
C Prior Art] The current cumulative prior electromotive force T varies slightly depending on the materials used, structure, etc. 5. ``11! Pressure is o under sunlight
, G ~0.8 (V) 42 degrees. Therefore, in order to use it as an alternative energy source such as 屹den i!, it is necessary to connect multiple photovoltaic elements in series. Normally, photovoltaic elements maintain high area efficiency and also improve manufacturing efficiency. When viewed from the surface, it is formed into a rectangular shape, and the series connection 1 is also configured in an upside-down manner in which each of these photovoltaic elements is linearly arranged.

しかしこの様な構成では民生用として意匠的効果を考慮
した場合、設計上の制約が大きいという問題があった。
However, with this configuration, there is a problem in that there are significant design restrictions when considering the design effect for consumer use.

このため従来にあっても各光起電力素子を洲えば三角形
、或いは環形とし、全体を平面視で円形をな−(ように
組み合J)せた光起電力装置し提案されている(実公昭
5l−2GO64号)。
For this reason, even in the past, photovoltaic devices have been proposed in which each photovoltaic element has a triangular or annular shape, and the whole is combined to form a circular shape in plan view. Kosho 5l-2GO64).

第71は従来の円形に構成された光起電力装置の模式的
下面図であり、円形の絶縁基板31上に略同1円環状の
光起電力素子A、B、、Cを同心円状ζこ配設し、円環
状の光起電力素子B、Cの一部に切れ目を形成し、この
切れ目的で接続片3.Ia、32a。
No. 71 is a schematic bottom view of a conventional circularly configured photovoltaic device, in which photovoltaic elements A, B, C, each having approximately the same annular shape, are arranged in concentric circles on a circular insulating substrate 31. A cut is formed in a part of the annular photovoltaic elements B and C, and a connecting piece 3. Ia, 32a.

32h、33aを用いて各素子を相互に直列喧繞せしめ
た構成となっている。
32h and 33a are used to interconnect each element in series.

〔発明が1決しようとする問題点〕 とごろで上述した如き従来Vi2にあっては、各光起電
力、i?−の形状は円形、或いは環形に構成さtlてい
るが、完全な円形、或いは環形ではなく、円形の素子へ
にあっては一媚所から接続片31aがi主段さり、また
X9形の素子F3.  Cにあってはその一関所が破断
さ1t−Cその一端から接続片32a、32b。
[Problems that the invention attempts to resolve] In the conventional Vi2 as described above, each photovoltaic force, i? The shape of - is circular or annular, but it is not completely circular or annular, and in the case of a circular element, the connecting piece 31a is the main step from one place, and the X9 shape is not completely circular or annular. Element F3. In case of C, one checkpoint is broken, and connecting pieces 32a and 32b are connected from one end of 1t-C.

33、aが夫々l4せしめられた構成となっており、形
状が桟χとなる外、4劾面閂が小さくなり、また基板と
してガラス等の透光性のものを用いたときIiこれらの
切れ目が表面側から透視される結果、意匠的にも不都合
な場合があるなどの問題があった。
33.A has a configuration in which each of a is made l4, and in addition to the shape being a crosspiece χ, the four-face bar is small, and when a translucent material such as glass is used as the substrate, Ii these cuts As a result, there were problems such as the fact that it could be seen through from the surface side, which may be inconvenient in terms of design.

!問題点を解決4乙ための下段〕 4−Q明はかかる事情にユtみなされたものであつ〔、
その目的と′4る占ごろはδ光起電力素子を連続した切
れ目のない環形にするごとによっ゛(4i造が簡略化さ
れることは勿−一、自幼面粘が大きくなり、また基板に
透光性のものを用いたときイ)切れ口がないため意匠的
な外観にも優れた光起電力装置を提供するある。
! 4-Q Ming was taken into consideration by these circumstances.
The purpose of this is that by making the δ photovoltaic element into a continuous, unbroken ring shape (4i structure is of course simplified, the self-surface viscosity increases, and When a translucent substrate is used, a) a photovoltaic device with an excellent design appearance is provided because there are no cuts;

本発明に係る光g電力装置は、基板の主面上に切れ目な
く連続した環形、又は切れ目なく平面的な広がりをもつ
光起電力素子及びこの外側に相隣させ口これと直列接続
セレめられた切れ目のない連続した環形をなす光起電力
素子を形成したことを特徴とする。
The photovoltaic power device according to the present invention includes a photovoltaic element having an uninterrupted ring shape or an uninterrupted planar expanse on the main surface of a substrate, and an opening adjacent to the outside of the photovoltaic element and connected in series with the photovoltaic element. The photovoltaic device is characterized by forming a photovoltaic element in the form of a continuous ring without any breaks.

・[実ATh例] 以下本発明をその実り例を示す図面に基づき具体的に説
明1゛る。第1図は本発明に係る光8電力装置(以下本
発明!j27iという)の模式的背面図、第2図は第1
回の[1−tl線による11民的11i断面図であり、
口中1は透光性絶縁基板、2 (2a、 2b、 2e
)i1i3明電極、3 (3a、3b)は非晶質半導体
層、4(4,L、ib> は裏面電極を示している。
- [Actual ATh Example] The present invention will be specifically explained below based on drawings showing practical examples of the present invention. FIG. 1 is a schematic rear view of the optical 8 power device according to the present invention (hereinafter referred to as the present invention!j27i), and FIG.
It is a cross-sectional view of 11 folk 11i according to the [1-tl line of
In the mouth 1 is a transparent insulating substrate, 2 (2a, 2b, 2e
) i1i3 bright electrode, 3 (3a, 3b) is an amorphous semiconductor layer, and 4 (4, L, ib> is a back electrode).

透光性絶縁基板lは円板形に形成されており、その主面
を第2図において下面)に透明電極2、非晶質半導体F
ii 3 、、裏面電極4をごの硬序で積層形成して切
れ目のない連続した環状の光起電力装置八2 Bを内、
外に同心状に配置し、これら内。
The transparent insulating substrate l is formed in the shape of a disk, and has a transparent electrode 2 and an amorphous semiconductor F on its main surface (the bottom surface in FIG. 2).
ii 3. The back electrodes 4 are laminated in a uniform order to form a continuous ring-shaped photovoltaic device 82B,
Arranged concentrically outside and inside these.

外の光起電力素子八、Bを直列接続せしめである。The outer photovoltaic elements 8 and B are connected in series.

5、a 、 Sh 、 5bはいずれもリード線であっ
て、リード璋5aは内側の光起電力素子への中心部に露
出させた透明@1fi2.aに、またリード線5b 、
 Sitは外側の光起心力圭7−Bの外周に露出させた
透明電極2cに対;、基板中心の反対側の位置で夫々接
続されている。
5, a, Sh, and 5b are all lead wires, and the lead wire 5a is a transparent wire exposed at the center to the inner photovoltaic element. a, and the lead wire 5b,
Sits are connected to the transparent electrodes 2c exposed on the outer periphery of the outer photovoltaic force 7-B at positions opposite to the center of the substrate.

次に上述した如き本発明装置の製造方法につき1体的に
説明する。第3図(イ)〜(へ)は本発明装置の製造工
程図である。先ず第3図(イ)に云ず如く、ガラス等の
透光性絶縁基板1の主面(図面では下側面)の全体にイ
ンジ・ウニ。スズ酸化−等を材Piとする退明電44i
2を一部な厚さに形ttj9.4.、  次いでこの透
明電極2上にスクリーン印刷11上によりレジス1−を
パターン印刷して乾(呈)&、曲iつと塩酸との混合物
、熱リン酸等を用いてエツチングし、第3閃(ロ)に示
す如く透光性絶縁基板1の主面に達する深さの円形の溝
2p、 2qを同心状に形成して透明電極を円形の遇明
電!42a、円環状の透明電極2b、2eの39!Fi
域に同心円状に分割する。
Next, a method for manufacturing the apparatus of the present invention as described above will be explained in detail. FIGS. 3(A) to 3(F) are manufacturing process diagrams of the apparatus of the present invention. First, as shown in FIG. 3(a), the entire main surface (lower surface in the drawing) of a translucent insulating substrate 1 made of glass or the like is coated with ink. Retired metal 44i with tin oxide etc. as material Pi
2 to a partial thickness shape ttj9.4. Next, a pattern of resist 1- is printed on the transparent electrode 2 by screen printing 11, and then dried and etched using a mixture of diluted carbon dioxide and hydrochloric acid, hot phosphoric acid, etc., and a third flash is applied. ), circular grooves 2p and 2q with a depth reaching the main surface of the transparent insulating substrate 1 are formed concentrically to form a transparent electrode in a circular shape. 42a, 39 of the annular transparent electrodes 2b and 2e! Fi
Divide concentrically into areas.

なお透明電極2a、2bは光起電力素子としての取出、
し電力を低下させないようその表面梼を略等しく設定し
−(ある。
Note that the transparent electrodes 2a and 2b can be taken out as photovoltaic elements,
In order to prevent the power from decreasing, the surfaces are set to be approximately equal.

次に第3図(ハ)に示すmJ<透明電極2δ、2b、2
cの表面及びこれらの間のl1lI2ρ、2Q内に露出
している透光性絶縁基板1の主面に非晶質シリコン等を
用い(p型、i型、n!S2からなる非晶質半導体j3
を茜要厚さに形成すると共に、この非晶rj半導体層3
の表面に更にhtf7Jの裏面電極4を−4にgjri
形成する。
Next, as shown in FIG. 3(c), mJ<transparent electrode 2δ, 2b, 2
Amorphous silicon or the like is used for the main surface of the transparent insulating substrate 1 exposed in the surface of c and in l1lI2ρ, 2Q between these (an amorphous semiconductor consisting of p-type, i-type, n!S2 j3
is formed to a required thickness, and this amorphous rj semiconductor layer 3 is
Furthermore, add back electrode 4 of htf7J to -4 on the surface of gjri.
Form.

次にフォルシストと、ソツ酸と硝酸との混合液からなる
エツチング液を用い、第3図(ニ)に示す如く、基板1
の中火部に(a置する円形の通明電掘2aの中心に小円
形の透明゛心橿が露出するよう几3pを、また円Iり形
の透明゛4極2bの内用縁に沿っ゛〔所9幅寸法の透明
1i−が露出するように満3qを、更に円rワ形の透明
電極2(についCはその表面が全面にわたって露出する
ように満3rを夫々透明電極7a、 2b、2eに違゛
(る諜さに形成し、芥品質半導体亡3を夫々円環状のに
品質半導体Fii3m、3bに、また裏面4掻4を夫々
円環状の裏面電極4a、、4bに分別する。その後第3
図(ホ)に示す如く、先にエツチングして透明型!fi
2a、 2b、 2.cを露出させた部分の全部にわた
っCAZ萼のg面′Iii極を鼻晶質半導体層3表面に
J8威されている裏面電極4の表面と同じ高さになるま
で!M層形成する。
Next, using an etching solution consisting of a mixture of phorcyst, solic acid, and nitric acid, the substrate was etched as shown in FIG. 3(d).
In the middle of the fire (a), place a ring 3p so that the small circular transparent core is exposed at the center of the circular electric pole 2a, and place it along the inner edge of the circular transparent 4-pole 2b.゛゛゛                                                                    , , 2e are formed in a different manner, and the waste quality semiconductor particles 3 are separated into annular quality semiconductors Fii 3m and 3b, respectively, and the back surface 4 is separated into annular back electrodes 4a, 4b, respectively. .Then the third
As shown in the figure (e), first etch it and make it transparent! fi
2a, 2b, 2. Stretch the g-plane 'III' pole of the CAZ calyx over the entire exposed part of the crystalline semiconductor layer 3 until it reaches the same height as the surface of the back electrode 4! Form M layer.

そし、′〔再びil+記したと同様のフォトレジスト。Then, '[il+ again the same photoresist as described.

エツチング液を用いて第3図(へ)に示ず如く、1明電
!fi2aの中心であっζ先にエツチングにより露出さ
せたと同槌に透明電極2aに連する孔4111を形成し
、またノ1品質半導体層3bの内周縁に沿ってこ、!1
に連する爛伏の満4・9を形成して裏面電極4を4a。
1 Meiden! using etching solution as shown in Figure 3 (f). A hole 4111 connected to the transparent electrode 2a is formed in the center of fi2a exposed by etching earlier, and also along the inner periphery of the No. 1 quality semiconductor layer 3b. 1
The back electrode 4 is 4a by forming a full 4.9 part of the bulge that is connected to the 4a.

4bに分υ1し゛C1内、外に相隣し、且つ内側に位置
゛Iる光起電力素子への裏面電極と外側に位置する光起
電力素子Bのぶ引を極とが相互に直列接続した本発明装
置が形+4されることとちる。
The back electrode to the photovoltaic element located on the inside and the pole of the photovoltaic element B located on the outside are connected in series with each other in series. It is assumed that the device of the present invention is modified to +4.

第4図はイ、発明の(もの実施例を示す模パ:的1r面
図、第5閃は第4図のV−V瞳による模式的断面図であ
り、透光(+!−絶縁基Fi!、及びこの、1日面上に
形成された内、外に相隣して位に′□4る光起電力素Y
−^、13とをいずれも多角形(具体的には6角形)を
なす環状に構成した場合を示し゛(いる、(もの構成は
iil記第1.2図に示した実施例と同しであり、。
FIG. 4 is a schematic cross-sectional view taken along the V-V pupil in FIG. Fi!, and the photovoltaic elements Y formed on this day surface and located adjacent to each other inside and outside
-^, 13 are all configured in a polygonal (specifically hexagonal) annular configuration. And.

対応′(5部分には第1.2図に示したのと同し番号を
付して説明を露路する。
Correspondence' (Part 5 is given the same number as shown in Fig. 1.2 for explanation.

第6図は本発明の更に伯の実施例Cあり、内。FIG. 6 shows a further embodiment C of the present invention.

外の光起電力玉子^、Bともに内、外に蛇行する花j「
形に形成され゛(いるり外は前記第1.2[11に示し
た実施例と略同しであり、対応する部分には間し番号を
付しである。
Photovoltaic egg outside ^, both B and flower meandering inside and outside ``
It is formed into a shape (other than the outside is substantially the same as the embodiment shown in Section 1.2 [11] above, and corresponding parts are numbered in between.

4お、各光起電力素子A、Bの形状については特に上記
・した構成にのみ限定−(るものではなく、・両光起″
心力!了へ、Bともに1g状の複数の円形、三角形、そ
の他の各種多角形でもよい、また光起電り正了へに−、
)いてはU9(Jeではなく円、円形、そ乱、)他切t
1rlのムいl!岐した平面的な広がりを6するもので
あってもよい。
4. The shape of each photovoltaic element A, B is limited to the above-mentioned configuration.
Strength! To complete, B can also be multiple circles, triangles, and other various polygons in the shape of 1g.Also, to complete photovoltaics,
) is U9 (not Je, circle, circular, disturbance, etc.)
1rl's mui l! The branched planar spread may be six.

また上記実施例は基板Sとしてガラス等の透光143色
i基板を用いた11成につき説明したが、何らこね、に
観らず、例えばステンレス基板等を用いてイ)よいこと
は勿論である。
In addition, although the above embodiment has been described for the 11th structure in which a transparent 143-color i-substrate made of glass or the like is used as the substrate S, it is of course possible to use a stainless steel substrate, etc., for example, without looking at the details. .

【・す1.東〕 1・;ノ]の如く本発明装置にあっζは切れ目のない連
続したf9形をな場?!数個の光起電力素子を基板上に
内、外に相、隣せしめて直列接続したから、全体の11
1.氏が涌藺化され、また切れ目がtいがらそれだi)
 (i油面礒も人きく、更に対称形状とすることが可能
と4つて形O:を単純化小米て!!l造幼率の向上を図
れると同時に怠匠的幼果も高め4るなと・ト発明は((
れだ効果を秦場るものである。
[・S1. 1.; ノ] In the present invention device, ζ is a continuous f9 shape with no break? ! Since several photovoltaic elements were connected in series on the substrate, adjacent to each other, the total number of 11
1. He has been promoted, and there is still a break, but that's it)
(It is also possible to make oil-faced seeds more attractive, and it is also possible to make them into a symmetrical shape.) Simplify the shape of O:!! l At the same time, it is possible to improve the rate of young production, and at the same time, it also increases the number of lazy young fruits. The invention is ((
This is what makes the effect worse.

【図面の簡単な説明】[Brief explanation of drawings]

第1[、jは本発明装置の模式的断面図、男2図は第1
図の[1−TI線による縦断面図、第3図(イ)〜(へ
)はVJ造工程図、第4図は本発明の他の実’&1P4
U)P’AK&’)A”tMU:!J 、 ラフ、 5
 r/l Li 第 4 ia のv−v 瞳二二よる
縦断面図、第6図は本発明の更に他の実、6・ト例を示
1模式的Tt面図、第7閃は従来装、lの模式的/?而
面である。 立・・通光性絶縁基板 2.2a、2b、、2c・・・
透明電極3 、3.+、3’b=−非晶W’!’4体屓
 4 、4a、 4t+−1面電極5a、、Sb ・・
・リーI線 h j 出願人  三!f電機li式会ンI代理人 弁
理士  河 野  登 夫 卦        ・4   9 11゛ ・′−b 発 、=a  、、l    1.“2S、
ζ [1 、旨・[、・1゜ 第 2 図 ””’  hl、21、M5111115181251
511.2工ユユ壬、〆・F 1  、) 8.・−2シ9   ・ご15 パC 43,7 し   ル 嶋  Xa  、 a  ヒ 漬−側 、l12シ 第 7 コ
Figure 1 [, j is a schematic sectional view of the device of the present invention, Figure 2 is the first
In the figure, [1-TI line longitudinal cross-sectional view, Figures 3 (a) to (f) are VJ construction process diagrams, Figure 4 is another actual product of the present invention & 1P4
U)P'AK&')A”tMU:!J, Rough, 5
FIG. 6 is a longitudinal cross-sectional view taken through the v-v pupil 22 of r/l Li 4th ia, FIG. 6 is a schematic Tt view showing still another example of the present invention, and FIG. , l schematic /? It is a matter of fact. Standing... Light-transmitting insulating substrate 2.2a, 2b, 2c...
Transparent electrode 3, 3. +, 3'b=-amorphous W'! '4 bodies 4, 4a, 4t+-1 side electrode 5a,, Sb...
・Lee I line h j applicant 3! F Electric Li Shikikai I Agent Patent Attorney Noboru Kono ・4 9 11゛・′-b ,=a ,,l 1. “2S,
zeta
511.2 工 ゆゆみ〆・F 1、) 8.・-2shi9 ・Go15 PaC 43,7 Shirushima Xa, a Hizuke-side, l12shi No. 7

Claims (1)

【特許請求の範囲】 1、基板の主面上に切れ目なく連続した環形、又は切れ
目なく平面的な広がりをもつ光起電力素子及びこの外側
に相隣させてこれと直列接続せしめられた切れ目のない
連続した環形をなす光起電力素子を形成したことを特徴
とする光起電力装置。 2、前記内側の光起電力素子と外側の光起電力素子とは
相対向する全周縁にわたってその電極同士が直列接続と
なるよう接続せしめられている特許請求の範囲第1項記
載の光起電力装置。 3、前記内、外の各光起電力素子は円環形、又は角環形
である特許請求の範囲第1項記載の光起電力装置。 4、前記内、外の各光起電力素子は光活性層に非晶質シ
リコン層を含む特許請求の範囲第1、第2又は第3項記
載の光起電力装置。
[Scope of Claims] 1. A photovoltaic element having an uninterrupted ring shape or an uninterrupted planar extension on the main surface of the substrate, and a photovoltaic element having adjacent cuts outside the element and connected in series thereto. 1. A photovoltaic device characterized by forming a photovoltaic device in the form of a continuous ring. 2. The photovoltaic device according to claim 1, wherein the inner photovoltaic element and the outer photovoltaic element are connected so that their electrodes are connected in series over the entire opposing edges. Device. 3. The photovoltaic device according to claim 1, wherein each of the inner and outer photovoltaic elements has a ring shape or a square ring shape. 4. The photovoltaic device according to claim 1, 2 or 3, wherein each of the inner and outer photovoltaic elements includes an amorphous silicon layer as a photoactive layer.
JP60251520A 1985-11-09 1985-11-09 Photovoltaic device Pending JPS62111480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60251520A JPS62111480A (en) 1985-11-09 1985-11-09 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60251520A JPS62111480A (en) 1985-11-09 1985-11-09 Photovoltaic device

Publications (1)

Publication Number Publication Date
JPS62111480A true JPS62111480A (en) 1987-05-22

Family

ID=17224031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60251520A Pending JPS62111480A (en) 1985-11-09 1985-11-09 Photovoltaic device

Country Status (1)

Country Link
JP (1) JPS62111480A (en)

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JP2006216580A (en) * 2005-02-01 2006-08-17 Fuji Electric Holdings Co Ltd Solar cell element and solar battery module
JP2011035270A (en) * 2009-08-04 2011-02-17 Sharp Corp Photoelectric converter
US20120103390A1 (en) * 2009-06-30 2012-05-03 Lg Innotek Co., Ltd Solar Cell Apparatus
JP2012134451A (en) * 2010-12-01 2012-07-12 Ntt Facilities Sogo Kenkyusho:Kk Solar cell unit
JP2012238789A (en) * 2011-05-13 2012-12-06 Fujifilm Corp Semiconductor device, solar cell module, solar cell string and solar cell array
JP2015170687A (en) * 2014-03-06 2015-09-28 セイコーエプソン株式会社 Power generator, clock, and manufacturing method for power generator

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123367U (en) * 1988-02-16 1989-08-22
JP2006216580A (en) * 2005-02-01 2006-08-17 Fuji Electric Holdings Co Ltd Solar cell element and solar battery module
US20120103390A1 (en) * 2009-06-30 2012-05-03 Lg Innotek Co., Ltd Solar Cell Apparatus
CN102484115A (en) * 2009-06-30 2012-05-30 Lg伊诺特有限公司 Photovoltaic power-generating apparatus
JP2012532456A (en) * 2009-06-30 2012-12-13 エルジー イノテック カンパニー リミテッド Solar power plant
US8987582B2 (en) 2009-06-30 2015-03-24 Lg Innotek Co., Ltd. Solar cell apparatus
EP2450969A4 (en) * 2009-06-30 2016-11-16 Lg Innotek Co Ltd Photovoltaic power-generating apparatus
JP2011035270A (en) * 2009-08-04 2011-02-17 Sharp Corp Photoelectric converter
JP2012134451A (en) * 2010-12-01 2012-07-12 Ntt Facilities Sogo Kenkyusho:Kk Solar cell unit
JP2012238789A (en) * 2011-05-13 2012-12-06 Fujifilm Corp Semiconductor device, solar cell module, solar cell string and solar cell array
JP2015170687A (en) * 2014-03-06 2015-09-28 セイコーエプソン株式会社 Power generator, clock, and manufacturing method for power generator

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