JP2010093188A - Photoelectric conversion element, photoelectric conversion element connecting body, and photoelectric conversion module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which allows the time required for a wiring process and the cost required for wiring members to be reduced, a photoelectric conversion element connecting body, and a photoelectric conversion module. <P>SOLUTION: The photoelectric conversion element includes: a first-conductivity-type first semiconductor layer; a first electrode 2 which is disposed on the rear surface side of the first semiconductor layer and is electrically connected to the first semiconductor layer; a second-conductivity-type second semiconductor layer which is in contact with the first semiconductor layer and has a portion disposed on the light-receiving surface side of the first semiconductor layer; a light-receiving surface electrode 5 which is provided on the light-receiving surface side of the second semiconductor layer so as to be electrically connected to the second semiconductor layer; second electrodes 7 which are arranged on the rear surface side of the first semiconductor layer, are electrically separated from the first semiconductor layer, and are electrically connected to the second semiconductor layer; and penetrating connecting sections 9 which penetrate the first semiconductor layer, are electrically separated from the first semiconductor layer, and electrically connect the light-receiving surface electrode 5 to the second electrodes 7. On the rear surface side of the first semiconductor layer, the first electrode 2 is disposed on a portion of the periphery of the first semiconductor layer, and a separated region 19 electrically separated from the first semiconductor layer is provided to surround the second electrodes 7. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a photoelectric conversion element, a photoelectric conversion element connector, and a photoelectric conversion module.

  In recent years, a photoelectric conversion element that directly converts solar energy into electric energy has been rapidly expected as a next-generation energy source particularly from the viewpoint of environmental problems. As a photoelectric conversion element, a silicon crystal is currently used as the mainstream.

  Among them, an MWT (Metallization Wrap Through) photoelectric conversion element has been proposed in order to reduce the surface electrode area occupancy and suppress the carrier recombination below the surface electrode (Non-patent Document 1). This MWT photoelectric conversion element has a structure in which a part of the surface electrode is routed to the back side through a through-hole formed in the silicon substrate, and the area occupancy of the surface electrode can be reduced.

  In addition, a photoelectric conversion element connection body in which a p-side electrode on the back surface of one MWT photoelectric conversion element and an n-side electrode on the back surface of an adjacent MWT photoelectric conversion element are connected by an interconnection foil has been proposed ( Non-patent document 2). This interconnection foil has a patterned aluminum layer, and an anti-corrosion layer is formed on the surface of the portion where the aluminum layer is electrically connected to each electrode on the back surface of the MWT photoelectric conversion element. A post-treatment is applied to form, and the other part is coated with an insulating varnish. Each electrode on the back surface of the MWT photoelectric conversion element is electrically connected to the corrosion-resistant layer through a conductive adhesive.

Filip Granek, et al., "A SYSTEMATIC APPROACH TO REDUCE PROCESS-INDUCED SHUNTS IN BACK-CONTACTED MC-SI SOLAR CELLS", IEEE 4th World Conference on Photovoltaic Energy Conversion, (USA), 2006, p.1319-1322 P.C.de Jong, et al., "SINGLE-STEP LAMINATED FULL-SIZE PV MODULES MADE WITH BACK-CONTACTED MC-SI CELLS AND CONDUCTIVE ADHESIVES", 19th European Photovoltaic Solar Energy Conference, (France), 2004, p.2145-2148

  Since the interconnection foil requires complicated patterning, in order to avoid problems such as poor connection with the MWT photoelectric conversion element and a decrease in conversion efficiency, the photoelectric conversion element is placed on the interconnection foil. It is necessary to arrange with high positional accuracy. Furthermore, the production process of the putter interconnection foil and the cost of the conductive adhesive are expensive compared to the interconnector.

  The present invention has been made in view of such circumstances, and can easily connect between adjacent photoelectric conversion elements using an inexpensive wiring member, thereby reducing the time required for the wiring process and the cost for the wiring member. It aims at providing a photoelectric conversion element, a photoelectric conversion element connection body, and a photoelectric conversion module.

  Thus, according to the present invention, the first conductive type first semiconductor layer, the first electrode disposed on the back surface side of the first semiconductor layer and electrically connected to the first semiconductor layer, and the first semiconductor layer And a second semiconductor layer of the second conductivity type, at least part of which is disposed on the light receiving surface side of the first semiconductor layer, and electrically connected to the second semiconductor layer on the light receiving surface side of the second semiconductor layer A light receiving surface electrode provided on the back surface side of the first semiconductor layer, the second electrode electrically separated from the first semiconductor layer and electrically connected to the second semiconductor layer; A through-connection portion that penetrates through one semiconductor layer and is electrically separated from the first semiconductor layer and electrically connects the light-receiving surface electrode and the second electrode, and at least on the back side of the first semiconductor layer, The first electrode is disposed on a part of the outer peripheral portion of the one semiconductor layer, and at the outer peripheral portion of the first semiconductor layer. From the first electrode facing the portion that over the periphery of the second electrode, the photoelectric conversion element electrically isolated isolation region and the first semiconductor layer is provided is provided.

Moreover, according to another viewpoint of this invention, it is equipped with two or more said photoelectric conversion elements arrange | positioned adjacently, and the wiring member between elements, The 2nd electrode of one photoelectric conversion element, and another photoelectric conversion element A first photoelectric conversion element connection body in which the first electrode of the conversion element is electrically connected by the inter-element wiring member, and two or more photoelectric conversion elements arranged adjacent to each other, and the inter-element A second photoelectric conversion element connection body comprising a wiring member, wherein the first electrodes or the second electrodes of one photoelectric conversion element and another photoelectric conversion element are electrically connected by the inter-element wiring member. Provided.
According to still another aspect of the present invention, at least one of the plurality of first photoelectric conversion element connection bodies and the plurality of second photoelectric conversion element connection bodies is combined on a translucent support plate. A photoelectric conversion module in which adjacent photoelectric conversion element connectors are electrically connected by the inter-element wiring member is provided.

According to the present invention, on the back surface side of the first semiconductor layer of the photoelectric conversion element, the first electrode is disposed at least in a part of the outer periphery of the first semiconductor layer, and the first electrode in the outer periphery of the first semiconductor layer. An isolation region that is electrically isolated from the first semiconductor layer is provided from the portion facing the one electrode to the periphery of the second electrode.
When a plurality of photoelectric conversion elements are connected in series, for example, the plurality of photoelectric conversion elements are arranged in a line in the same direction, and the second electrode of one photoelectric conversion element and the first electrode of the other photoelectric conversion element are linear. It is possible to easily connect in series in a short time using an inexpensive inter-element wiring member. As a result, the manufacturing cost of the photoelectric conversion element connector and the photoelectric conversion module can be reduced.

  A photoelectric conversion element of the present invention includes a first semiconductor layer of a first conductivity type, a first electrode disposed on the back side of the first semiconductor layer and electrically connected to the first semiconductor layer, and a first semiconductor layer And a second semiconductor layer of the second conductivity type, at least part of which is disposed on the light receiving surface side of the first semiconductor layer, and electrically connected to the second semiconductor layer on the light receiving surface side of the second semiconductor layer A light receiving surface electrode provided on the back surface side of the first semiconductor layer, the second electrode electrically separated from the first semiconductor layer and electrically connected to the second semiconductor layer; A through-connection portion that penetrates through one semiconductor layer and is electrically separated from the first semiconductor layer and electrically connects the light-receiving surface electrode and the second electrode, and at least on the back side of the first semiconductor layer, The first electrode is disposed on a part of the outer periphery of the first semiconductor layer, and the outer periphery of the first semiconductor layer is Wherein the first electrode facing the portion over the periphery of the second electrode, wherein the electrically isolated isolation region and the first semiconductor layer is provided.

That is, this photoelectric conversion element has a relatively wide photoelectric conversion element in order to increase the effective power generation area by reducing the area of the light receiving surface electrode and to facilitate electrical connection between the plurality of photoelectric conversion elements. The above-described structure is provided in which a connection portion that requires an area is disposed on the back side opposite to the light receiving surface.
Here, in the present invention, the first conductivity type means p-type or n-type, and the second conductivity type means n-type or p-type opposite to the first conductivity type.

  In the present invention, as a method of electrically separating the through connection portion from the first semiconductor layer and a method of easily forming the isolation region, forming a second semiconductor layer at these locations can be cited. That is, the second semiconductor layer is formed by making the peripheral portion of the through-connection portion in the first semiconductor layer the second conductivity type and making the isolation region on the back surface of the first semiconductor layer the second conductivity type. This will be described in detail later.

In the present invention, the outer shape of the photoelectric conversion element is not particularly limited, but the simple power generation is simple and the effective power generation area when a plurality of photoelectric conversion elements are installed in the same installation area is as follows. A square that is larger is preferred.
In this case, the outer shape of the outer periphery of the first semiconductor layer is square, the metal electrode layer is formed in a region excluding the separation region on the back surface of the first semiconductor layer, and the first electrode is one side of the outer periphery of the first semiconductor layer. The separation region may be disposed from the opposite side of the outer periphery of the first semiconductor layer opposite to the first electrode to the periphery of the second electrode. .
In this way, since the linear first electrode is arranged along one side of the quadrangle on the back surface side of the first semiconductor layer, the first electrode may be formed only at one location in a straight line. The electrode forming process is easily performed in a short time.

Furthermore, a plurality of second electrodes may be provided in order to efficiently recover power from the photoelectric conversion element.
In this case, for example, a plurality of through-connection portions are arranged side by side in the longitudinal direction of the first electrode and in a direction orthogonal to this direction, and the second electrode is arranged in a dot shape on the plurality of through-connection portions, The separation region may be formed in a band shape surrounding a plurality of second electrode rows arranged in a direction orthogonal to the longitudinal direction. Alternatively, a plurality of through-connection portions are arranged side by side in the longitudinal direction of the first electrode and in a direction orthogonal to this direction, and the second electrode is arranged on a row of the through-connection portions arranged in a direction orthogonal to the longitudinal direction. The separation region may be formed in a band shape surrounding the band-shaped second electrode.

  In this way, for example, by arranging the two photoelectric conversion elements in the same direction and in a direction perpendicular to the longitudinal direction of the first electrode (Arrangement A), a straight strip-shaped inter-element wiring member (a first element described later) A photoelectric conversion element connection body in which the second electrode row of one photoelectric conversion element and the first electrode of the other photoelectric conversion element are electrically connected in series can be formed by the same as the inter-element wiring member. Hereinafter, the longitudinal direction of the first electrode is referred to as “lateral direction”, and the direction orthogonal to the longitudinal direction of the first electrode is referred to as “vertical direction”.

  Further, when two photoelectric conversion elements are arranged in the horizontal direction facing reversely (Arrangement B), a straight strip-shaped first inter-element wiring member is connected to the second electrode row of one photoelectric conversion element, By connecting the second inter-element wiring member extending in the lateral direction to the first inter-element wiring member, and connecting the second inter-element wiring member and the first electrode of the other photoelectric conversion element by the third inter-element wiring member. A photoelectric conversion element connection body in which two photoelectric conversion elements are electrically connected in series can be formed.

  In addition, when two photoelectric conversion elements are arranged in the horizontal direction in the same direction (Arrangement C), the first to third inter-element wiring members are connected between the two adjacent first or second electrodes of photoelectric conversion. The photoelectric conversion element connection body electrically connected in parallel can be formed selectively.

  Moreover, according to this invention, if the said 1st-3 element wiring member is used, the photoelectric conversion element connection body of the above-mentioned arrangement | positioning AC will be combined by a desired number, and those desired connection form of a series and parallel Can be formed. Therefore, a photoelectric conversion module having a desired output can be easily manufactured using the photoelectric conversion element of the present invention.

In the photoelectric conversion element of the present invention, the plurality of rows of the second electrodes arranged in the lateral direction may be arranged at equal intervals. In this way, when the photoelectric conversion element connector or the photoelectric conversion module is manufactured, the plurality of first inter-element wiring members can be arranged at regular intervals, so that the connection work can be performed in a shorter time. it can.
In this case, the plurality of rows of through-connecting portions arranged in the horizontal direction are also arranged at equal intervals corresponding to the plurality of rows of the second electrode. In addition, the light receiving surface electrode may be arranged at a position corresponding to each through-connection portion at least on the light receiving surface side of the second semiconductor layer, but is branched in order to efficiently recover the electric power of the photoelectric conversion element. It may be formed. In addition, by forming the light receiving surface electrode in a thin branch shape, there is an advantage that the reduction of the effective power generation area can be suppressed and the light receiving surface electrode becomes inconspicuous and the aesthetic appearance is improved.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the following embodiment is an illustration and the scope of the present invention is not limited thereto.

Embodiment 1 Structure of First Photoelectric Conversion Element
1A is a plan view on the light-receiving surface side showing Embodiment 1 of the photoelectric conversion element of the present invention, and FIG. 1B is a plan view on the back side of the photoelectric conversion element of Embodiment 1. FIG. FIG. 2 is a cross-sectional view taken along line AA in FIG.
The photoelectric conversion element 10 includes a p-type first semiconductor layer 1 (hereinafter referred to as “p-type layer 1”) and a p-type layer 1 disposed on the back side of the p-type layer 1 and electrically connected to the p-type layer 1. One electrode 2 and an n-type second semiconductor layer 3 (hereinafter referred to as “n-type layer 3”) that is in contact with the p-type layer 1 and at least part of which is disposed on the light-receiving surface side of the p-type layer 1; A light-receiving surface electrode 5 provided so as to be electrically connected to the n-type layer 3 on the light-receiving surface side of the n-type layer 3 and a back surface side of the p-type layer 1 and electrically separated from the p-type layer 1 The second electrode 7 electrically connected to the n-type layer 3 and electrically separated from the p-type layer 1 through the p-type layer 1 and electrically connecting the light-receiving surface electrode 5 and the second electrode 7 to each other. And a through-connection portion 9 connected to the.

Specifically, the outer shape of the outer peripheral portion of the p-type layer 1 is a quadrangle, and the first electrode formation 2 is linearly arranged along one side of the outer peripheral portion of the square p-type layer 1.
Further, in the photoelectric conversion element 10, a plurality of through connections 9 and the second electrodes 7 are provided in the same number in the regions other than the region where the first electrode 2 is formed. A plurality of black circles in FIG. 1 indicate the through connection portion 9, but in fact, since the through connection portion 9 is covered with the first electrode 2 and the second electrode 7, it cannot be seen from the outside.
Specifically, a plurality of through-connection portions 9 are arranged in the horizontal direction and the vertical direction. At this time, in the plurality of through-connecting portions 9, the vertical intervals are equal intervals, and the horizontal intervals are equal intervals or more than the vertical intervals.
The second electrode 7 is arranged in a dot shape on the plurality of through-connection portions 9. Therefore, in the plurality of second electrodes 7, the vertical intervals are equal and the horizontal intervals are equal to or greater than the vertical intervals. Note that the dot-like second electrode 7 is formed larger than the through-connection portion 9 and is in contact with an enclosing portion 3 a described later of the n-type layer 3.

Further, in the photoelectric conversion element 10, the n-type layer 3 is surrounded by the surrounding portion 3 a that surrounds the outer periphery of each through-connection portion 9 and the side facing the first electrode 2 in the outer peripheral portion of the back surface of the p-type layer 1. And a separation region 19 formed in a band shape over the periphery of each row (vertical direction) of the second electrode 7, and each through-connecting portion 9 and each separation region 19 are separated by the surrounding portion 3 a and the separation region 19. The second electrode is electrically separated from the p-type layer 1.
Further, a comb-shaped metal electrode layer 13 is formed in a region excluding the separation region 19 on the back surface side of the p-type layer 1, and the p-type layer 1 is a high-concentration p-type layer in a portion in contact with the back-side metal electrode layer 13. 15. The first electrode 2 is formed on the metal electrode layer 13.
Furthermore, so as to insulate and separate the high-concentration p-type layer 15 and the metal electrode layer 13 from the n-type layer 3, the separation groove 21 is formed along the entire outer periphery of the metal electrode layer 13 including the outer periphery of each isolation region 19. Is formed to a depth reaching to the p-type layer 1.

Further, the photoelectric conversion element 10 has an antireflection film 23 on the light receiving surface of the n-type layer 3, the through connection portion 9 and the light receiving surface electrode 5 penetrate the antireflection film 23, and the light receiving surface electrode 5 is It is in contact with the n-type layer 3.
The light-receiving surface electrode 5 includes a base portion 5a that is electrically connected to a plurality of through-connection portions 9 arranged in the vertical direction, and a branch portion 5b that is narrower than the base portion 5a that is electrically connected to the base portion 5a. The plurality of rows of base portions 5a are connected by a plurality of parallel branch portions 5b. The base portion 5a is widest at the joint portion with the through-connection portion 9, but the width between the through-connection portions 9 is narrow in order to make the effective light receiving surface area (effective power generation area) of the photoelectric conversion element 10 as large as possible. Has been.

(Method for producing first photoelectric conversion element)
Next, the manufacturing method of the photoelectric conversion element of Embodiment 1 is demonstrated, referring FIGS. 3A to 3D are cross-sectional views illustrating a manufacturing process of the photoelectric conversion element of Embodiment 1, and FIGS. 4A to 4C are manufacturing processes subsequent to FIG. FIG.

<Through hole formation process>
First, as shown in FIG. 3A, a through hole 25a is formed in a rectangular p-type semiconductor substrate 25. At this time, a plurality of through holes 25a are formed at positions where the plurality of through connecting portions 9 described in FIG. 1 are formed.
The p-type semiconductor substrate 25 is not particularly limited. For example, a p-type crystal silicon substrate can be used. Hereinafter, the p-type semiconductor substrate 25 may be abbreviated as a p-type substrate 25.
Moreover, the formation method of the through-hole 25a is not specifically limited, For example, it can form by laser processing. The shape of the through hole 25a is not particularly limited, and in one example, it is a quadrangle (eg, square, rectangle) or a circle. The size of the through hole 25a is also not particularly limited. For example, in the case of a quadrangle, the length of one side can be about 0.05 to 1.0 mm, and in the case of a circle, the diameter can be about 0.05 to 1.0 mm. The vertical and horizontal intervals of the plurality of through holes 25a are not particularly limited, but the vertical interval can be set to a constant interval of about 1 to 50 mm, for example, and the horizontal interval can be set to a fixed interval of about 1 to 50 mm.

<Surface unevenness processing step>
Next, an uneven structure (texture structure) is formed on the surface of the substrate 25 by etching the surface of the substrate 25 using an acid or alkali solution or reactive plasma.

<N-type layer forming step>
Next, as shown in FIG. 3B, an n-type impurity is introduced into the p-type substrate 25 to form the n-type layer 3 on the surface portion exposed to the outside of the p-type substrate. The introduction of the n-type impurity can be performed, for example, by leaving the p-type substrate 25 in a high-temperature gas containing a material containing the n-type impurity (for example, POCl ₃ ). By this step, the n-type layer 3 is formed on the light-receiving surface side of the p-type substrate 25, the inner peripheral surface, the back surface side, and the outer peripheral end surface side of the through hole 25a, and the remaining portion that is not the n-type layer 3 is p-type. It becomes layer 1.

The formation method of the n-type layer 3 is not limited to the method shown here. The n-type layer 3 may be formed, for example, by ion-implanting ions made of n-type impurities into the p-type substrate 25. Further, instead of forming the n-type layer 3 by introducing n-type impurities into the p-type substrate 25, the n-type layer 3 is formed by separately forming an n-type semiconductor layer on the p-type substrate 25 by a CVD method or the like. It may be formed. In this case, the p-type substrate 25 becomes the p-type layer 1 as it is.
The n-type layer 3 only needs to be at least partially disposed on the light-receiving surface side of the p-type layer 1. Therefore, the n-type layer 3 disposed on the back side of the p-type layer 1 may be left as it is or may be removed by etching or the like. In addition, a diffusion prevention mask is disposed in advance on the back side of the p-type substrate 25, and n-type impurities are introduced into the p-type substrate 25 in this state, whereby the n-type layer 3 is not formed on the back side of the p-type layer 1. You may do it. However, since it is necessary to form the above-mentioned isolation region 19 on the back surface of the p-type layer 1, it is preferable to leave the n-type layer 3 at least in the isolation region formation portion. When the n-type layer 3 in the isolation region forming portion is removed, an insulating film (for example, a silicon oxide film) may be deposited only on that portion later.

<Antireflection film formation process>
Next, as shown in FIG. 3C, an antireflection film 23 is formed on the light receiving surface side of the n-type layer 3.
At this time, the antireflection film 23 is formed on the light receiving surface side of the n-type layer 3 so as to have an opening 23 a in a region where the light receiving surface electrode 5 is formed, or formed on the entire light receiving surface of the n-type layer 3. .
When the antireflection film 23 is formed on the entire light receiving surface of the n-type layer 3, the light receiving surface electrode 5 is formed on the antireflection film 23, and the light receiving surface electrode 5 and the n-type layer 3 are made conductive by fire-through. it can. This will be described in detail later.
The material, thickness, and formation method of the antireflection film 23 are not particularly limited as long as it has a function of suppressing surface reflection. For example, the antireflection film 23 is made of a SiN film having a thickness of about 50 to 100 nm by a plasma CVD method. An antireflection film 23 can be formed.

<Process for forming metal electrode layer and high-concentration p-type layer>
Next, as shown in FIG. 3D, a metal is formed in a region excluding the separation region 19 on the back surface of the p-type layer 1 (a belt-shaped region surrounding a plurality of rows of the plurality of through holes 25a arranged in the vertical direction). For example, a comb-shaped aluminum electrode is formed as the electrode layer 13. The aluminum electrode can be formed by printing and baking a paste material containing aluminum. At this time, aluminum diffuses immediately below the aluminum electrode to form the high concentration p-type layer 15 (see FIG. 4A). The metal electrode layer 13 may be formed so as to avoid the entire outer periphery of the p-type layer 1 other than the region excluding the separation region 19.

<Formation process of 1st electrode, 2nd electrode, and penetration connection part>
Next, as shown in FIG. 4A, the first electrode 2 and the second electrode 7 are formed on the back surface side of the p-type layer 1, and the through connection portion 9 is formed in the through hole 25a. At this time, the first electrode 2 is formed in a straight line on the high-concentration p-type layer 15 of the p-type layer 1, along one side of the outer peripheral portion of the p-type layer 1 and with a length slightly shorter than this side. . Further, the second electrode 7 is formed on each through hole 25 a in the separation region 19.

The materials of the first electrode 2, the second electrode 7 and the through connection portion 9 are not particularly limited, and these materials may be the same or different from each other, but are suitable for soldering. It is preferable to form with a metal (for example, silver).
Moreover, the formation method of the 1st electrode 2, the 2nd electrode 7, and the penetration connection part 9 is not specifically limited, For example, it can form by the vapor deposition method, the printing baking method of a paste electrode, the plating method, etc. For example, the 2nd electrode 7 and the penetration connection part 9 can be simultaneously formed by methods, such as printing an electroconductive paste from a back surface side, and baking. Or the 2nd electrode 7 and the penetration connection part 9 can be simultaneously formed also with a vapor deposition method or a plating method.

<Light-receiving surface electrode formation process>
Next, as shown in FIG. 4B, the light receiving surface electrode 5 is formed on the light receiving surface side of the n-type layer 3, and the light receiving surface electrode 5 is connected to each through connection portion 9. At this time, as described above, the light-receiving surface electrode 5 is formed on the n-type layer 3 by embedding an electrode material in the opening 23a of the antireflection film 23 by, for example, vapor deposition or plating. Alternatively, the light receiving surface electrode 5 and the n-type layer 3 may be connected to each other by fire-through by printing and baking an electrode paste on the antireflection film 23.

The material of the light-receiving surface electrode 5 is not particularly limited as long as it can be electrically connected to the n-type layer 3 and can recover the electric power generated in the photoelectric conversion element 10. For example, silver, aluminum, It can be formed of a metal material such as copper, nickel, palladium, etc. Among them, silver is preferable. In addition, the shape of the light receiving surface electrode 5 is not particularly limited. However, the light receiving surface electrode 5 includes the base portion 5a and the branch portion 5b described with reference to FIG. The shape is preferable.
It should be noted that there is no problem even if the order is changed from the formation process of the metal electrode layer and the high concentration p-type layer to the formation process of the light receiving surface electrode.

<Separation groove forming process>
Next, as shown in FIG. 4C, separation grooves 21 are formed along the entire circumference of the outer peripheral edge of the metal electrode layer 13 to complete the manufacture of the photoelectric conversion element 10.
The separation groove 21 can be formed by, for example, laser processing.

(Embodiment 2: Second photoelectric conversion element)
FIG. 5 is a plan view of the back side of Embodiment 2 of the photoelectric conversion element of the present invention. In FIG. 5, elements similar to those in the first embodiment are denoted by the same reference numerals.
In this photoelectric conversion element 100, the second electrode 107 is formed to extend in a strip shape on the row of through-connection portions 9 arranged in the vertical direction in each strip-shaped separation region 19 on the back surface side of the n-type layer 3. Yes. Also in this case, since the separation groove 21 is formed between the band-shaped second electrode 107 and the metal electrode layer 13, the second electrode 107 is insulated from the metal electrode layer 13 and the high concentration p-type layer 15. Yes.
The photoelectric conversion element 100 of Embodiment 2 has the same configuration as that of Embodiment 1 except that the shape of the second electrode 107 is different from that of Embodiment 1.
Therefore, this photoelectric conversion element 100 can be manufactured by the same manufacturing method as in Embodiment 1 except that the second electrode 107 is formed in a strip shape.

(Embodiment 3: First photoelectric conversion element connector)
FIG. 6 is a plan view of the back side of the first photoelectric conversion element connection body according to Embodiment 3 of the present invention.
This photoelectric conversion element connector U1 is obtained by connecting two or more photoelectric conversion elements 10a and 10b of the first embodiment in series. In FIG. 6, the same elements as those in the first embodiment are denoted by the same reference numerals.

More specifically, the photoelectric conversion element connector U1 includes two photoelectric conversion elements 10a and 10b according to the first embodiment that are arranged adjacent to each other in the vertical direction, and a plurality of inter-element wiring members 17, and one photoelectric conversion is performed. A plurality of second electrodes 7 arranged in the longitudinal direction of the element 10a and the first electrode 2 of the other photoelectric conversion element 10b are electrically connected in series by a straight strip-shaped inter-element wiring member 17. In FIG. 6, some of the second electrodes 7 in the photoelectric conversion elements 10 a and 10 b are indicated by solid line circles and all the through-connection portions 9 are indicated by black circles, but these are actually covered by the inter-element wiring member 17. It is not visible from the outside.
The shape and material of the inter-element wiring member 17 are not particularly limited. For example, the inter-element wiring member 17 is formed by plating a surface of a flat copper wire with solder.

In producing the photoelectric conversion element connection body U1, first, the two photoelectric conversion elements 10a and 10b are arranged in the vertical direction in the same direction. And the strip | belt-shaped element wiring member 17 is joined on the row | line | column of the several 2nd electrode 7 located in a line with the vertical direction of one photoelectric conversion element 10a, and from the photoelectric conversion element 10a of the element wiring member 17 of each row | line | column. The end protruding outward is joined to the first electrode 2 of the other photoelectric conversion element 10b.
Further, the inter-element wiring member 17 is joined to the other photoelectric conversion element 10 b on each row of the second electrodes 7.
In the third embodiment, the photoelectric conversion element connection body in which the two photoelectric conversion elements 10a and 10b are connected in series by the inter-element wiring member 17 is illustrated, but three or more photoelectric conversion elements are formed by the inter-element wiring member. You may connect in series.

  This photoelectric conversion element connection body U1 may be used as a final product itself, or may be used as a component of a photoelectric conversion module described later. In any case, since the two photoelectric conversion elements 10a and 10b can be connected only from the back side by using the strip-shaped inter-element wiring member 17, the wiring work is easy and the time required for the wiring process is shortened. Can be made. Further, since the strip-shaped inter-element wiring member 17 is relatively inexpensive, the manufacturing cost can be reduced.

When the photoelectric conversion element connection body U1 is used as a final product, the inter-element wiring member 17 of the other photoelectric conversion element 10b functions as a lead wire for taking out the electric power generated by the photoelectric conversion element connection body U1 to the outside. In this case, the end portions of the plurality of inter-element wiring members 17 may be integrated by connecting to one wiring member (bus bar). In this case, the photoelectric conversion element connection body U1 is placed on a translucent support plate and a translucent support plate that support the light receiving surfaces of a plurality of photoelectric conversion elements connected in series by an inter-element wiring member. Further, a covering member that covers and seals the back surfaces of the plurality of photoelectric conversion elements may be further provided.
When the photoelectric conversion element connection body U1 is used as a component of the photoelectric conversion module, the inter-element wiring member 17 of the other photoelectric conversion element 10b is joined to the first electrode of the photoelectric conversion element of the other photoelectric conversion element connection body. Or it is joined to one wiring member (bus bar) for taking out electric power outside (refer to Drawing 10).

In the photoelectric conversion element connector U <b> 1, the second electrode 7 and the surrounding metal electrode layer 13 may be prevented from being short-circuited by the inter-element wiring member 17.
Examples of this treatment include, for example, (1) covering at least a portion of the surface of the metal electrode layer 13 that may contact the inter-element wiring member 17 or (2) the surface of the inter-element wiring member 17. Any of these methods may be used.
With the method (1), the inter-element wiring member 17 is connected to the second electrode 7 without contacting the metal electrode layer 13 even when the alignment accuracy of the second electrode 7 and the inter-element wiring member 17 is low. can do.
In the method (1), it is preferable that the surface of the metal electrode layer 13 is further covered with insulation to a range wider than the width of the inter-element wiring member 17 in order to shorten the wiring process time. Although the method of insulation coating is not specifically limited, For example, the method of screen-printing and applying a resin paste is mentioned.
The methods (1) and (2) can also be applied to the photoelectric conversion element connection bodies of Embodiments 4 and 5 described later.

(Embodiment 4: Second photoelectric conversion element connector)
FIG. 7 is a plan view of the back surface side of the second photoelectric conversion element connector according to Embodiment 4 of the present invention.
This photoelectric conversion element connector U2 is obtained by arranging the two photoelectric conversion elements 10a and 10b of Embodiment 1 in the horizontal direction and connecting them in series. In FIG. 7, the same reference numerals are given to the same elements as those in the first embodiment.

In producing the photoelectric conversion element connector U2, first, the two photoelectric conversion elements 10a and 10b are arranged in the horizontal direction opposite to each other, and the plurality of second electrodes 7 arranged in the vertical direction of the one photoelectric conversion element 10a. The strip-shaped first inter-element wiring member 17a is joined on the row. The first inter-element wiring member 17a is substantially the same as the inter-element wiring member 17 described in the third embodiment.
Next, the end portion of each row of the first inter-element wiring member 17a protruding outward from the photoelectric conversion element 10a is joined to the second inter-element wiring member 17b extending in the lateral direction, and a plurality of third inter-element connection members At 17c, the second inter-element connection member 17b and the first electrode 2 of the other photoelectric conversion element 10b are joined. A plurality of second inter-element connection members 17b may be bonded in advance to the third inter-element connection member 17c.
Further, the first inter-element wiring member 17 a is joined to each other row of the second electrodes 7 also to the other photoelectric conversion element 10 b.

This photoelectric conversion element connector U2 may be used as a final product or as a component of a photoelectric conversion module to be described later. In either case, the time required for the wiring process can be shortened. Further, the manufacturing cost can be reduced.
Further, when the photoelectric conversion element connection body U2 is used as the final product, the first inter-element wiring member 17a of the other photoelectric conversion element 10b receives the electric power generated by the photoelectric conversion element connection body U2 as in the third embodiment. Therefore, the ends of the plurality of first inter-element wiring members 17a may be connected to and integrated with one wiring member (bus bar). Further, the photoelectric conversion element connector U2 also has a light-transmitting support plate that supports the light-receiving surface side of a plurality of photoelectric conversion elements connected in series by the first to third inter-element wiring members 17a, 17b, and 17c. You may further provide the coating | coated member etc. which coat | cover and seal the back surface side of the some photoelectric conversion element mounted on the electroconductive support plate.
When the photoelectric conversion element connection body U2 is used as a component of the photoelectric conversion module, the inter-element wiring member 17 of the other photoelectric conversion element 10b is joined to the first electrode of the photoelectric conversion element of the other photoelectric conversion element connection body. (See FIG. 10).

(Embodiment 5: Third photoelectric conversion element connector)
FIG. 8 is a plan view of the back surface side of the third photoelectric conversion element connector according to Embodiment 5 of the present invention.
This photoelectric conversion element connector U3 is obtained by connecting the two photoelectric conversion elements 10a and 10b of the first embodiment in parallel. In FIG. 8, the same elements as those in the first and fourth embodiments are denoted by the same reference numerals.

In producing the photoelectric conversion element connection body U3, first, two photoelectric conversion elements 10a and 10b are arranged in the horizontal direction in the same direction, and the first electrodes 2 and 2 of the photoelectric conversion elements 10a and 10b are arranged in the horizontal direction. Are joined to the second inter-element wiring member 17b extending through the plurality of third inter-element connection members 17c.
Further, a strip-shaped first inter-element wiring member 17a is joined on the row of the plurality of second electrodes 7 arranged in the vertical direction of the photoelectric conversion elements 10a and 10b.
In the fifth embodiment, the photoelectric conversion element connection body in which the two photoelectric conversion elements 10a and 10b are connected in parallel by using the second and third inter-element wiring members 17b and 17c is illustrated. Elements may be connected in parallel.

Even in this photoelectric conversion element connection body U3, it may be used as a final product, or may be used as a component of a photoelectric conversion module to be described later. In either case, the time required for the wiring process is shortened. Further, the manufacturing cost can be reduced.
When the photoelectric conversion element connection body U3 is used as a final product, the first inter-element wiring member 17a of each photoelectric conversion element 10a, 10b is a lead wire for taking out the electric power generated by the photoelectric conversion element connection body U3 to the outside. Therefore, the ends of the plurality of first inter-element wiring members 17a may be integrated by connecting to one wiring member (bus bar). Further, the photoelectric conversion element connection body U3 includes a translucent support plate and a translucent support that support the light receiving surfaces of a plurality of photoelectric conversion elements connected in parallel by the second and third inter-element wiring members 17b and 17c. You may further provide the coating | coated member etc. which coat | cover and seal the back surface side of the some photoelectric conversion element mounted on the board.
When the photoelectric conversion element connection body U3 is used as a component of the photoelectric conversion module, the inter-element wiring member 17 of each photoelectric conversion element 10a, 10b is joined to the first electrode of the photoelectric conversion element of the other photoelectric conversion element connection body. (See FIGS. 11 and 12).

(Embodiment 6: 4th photoelectric conversion element connection body)
FIG. 9 is a plan view of the back surface side of the fourth photoelectric conversion element connector according to Embodiment 6 of the present invention.
This photoelectric conversion element connection body U4 is also one in which the two photoelectric conversion elements 10a and 10b of Embodiment 1 are arranged in parallel in the horizontal direction. In FIG. 9, the same elements as those in the first, fourth, and fifth embodiments are denoted by the same reference numerals.

In this photoelectric conversion element connection body U4, the first inter-element wiring members 17a in each column of the two photoelectric conversion elements 10a and 10b are joined to one second inter-element wiring member 17b extending in the lateral direction. The only difference from Embodiment 5 is that the first electrodes 2 of the photoelectric conversion elements 10a and 10b are not connected to each other.
In the sixth embodiment, the photoelectric conversion element connection body in which the two photoelectric conversion elements 10a and 10b are connected in parallel by the first and second inter-element wiring members 17a and 17b is illustrated, but three or more photoelectric conversion elements are used. May be connected in parallel.

Even in this photoelectric conversion element connection body U4, it may be used as a final product, or may be used as a component of a photoelectric conversion module to be described later. In either case, the time required for the wiring process is shortened. Further, the manufacturing cost can be reduced.
When the photoelectric conversion element connector U4 is used as a final product, the first electrode 2 of each photoelectric conversion element 10a, 10b is connected to one second inter-element wiring member via a plurality of third inter-element wiring members. And may be integrated. Furthermore, the photoelectric conversion element connection body U4 includes a translucent support plate and a translucent support that support the light receiving surfaces of a plurality of photoelectric conversion elements connected in parallel by the first and second inter-element wiring members 17a and 17b. You may further provide the coating | coated member etc. which coat | cover and seal the back surface side of the some photoelectric conversion element mounted on the board.
When the photoelectric conversion element connection body U4 is used as a component of the photoelectric conversion module, the first electrode 2 of each photoelectric conversion element 10a, 10b is joined to the first inter-element wiring member of the other photoelectric conversion element connection body ( (See FIG. 12).

(Embodiment 7: first photoelectric conversion module)
FIG. 10 is a plan view of the back side of the first photoelectric conversion module according to Embodiment 7 of the present invention.
This photoelectric conversion module M1 is a combination of the photoelectric conversion element connection body U1 (see FIG. 6) of Embodiment 3 in the vertical direction and the photoelectric conversion element connection body U2 (see FIG. 7) of Embodiment 4 in the horizontal direction. It has a structure. In FIG. 10, the same elements as those in the first, third, and fourth embodiments are denoted by the same reference numerals, and the reference numerals U1 and U2 of the photoelectric conversion element connection body are omitted.

  In FIG. 10, four photoelectric conversion elements 10 are arranged in the vertical and horizontal directions, and a photoelectric conversion element connection body U1 in which three photoelectric conversion elements 10 are connected in series is arranged in the first and fourth columns from the left. A photoelectric conversion element connection body U1 in which two photoelectric conversion elements 10 are connected in series is arranged in the first and third columns, and two photoelectric conversion elements 10 are connected in series across the first and second columns. A conversion element connection body U2 is arranged, and a photoelectric conversion element connection body U2 in which two photoelectric conversion elements 10 are connected in series across the second and third rows is arranged, and the third and fourth rows are straddled. A photoelectric conversion module M1 in which a photoelectric conversion element connection body U2 in which two photoelectric conversion elements 10 are connected in series is arranged and these are connected is illustrated.

Further, in the photoelectric conversion module M1, the first electrode 2 of the photoelectric conversion element 10 at the end of the photoelectric conversion element connection body U1 in the first row is connected to the bus bar 81 via the wiring member 82, and the photoelectric conversion element in the fourth row. Each first inter-element wiring member 17a of the photoelectric conversion element 10 at the end of the connection body U1 is connected to the bus bar 81, and each bus bar 81 is connected to the positive and negative lead wires 83, 83 for power extraction. The second inter-element wiring member 17b of the photoelectric conversion element connector U2 across the eyes is connected to the lead wire 84, and two bypass diodes D are connected in series between the positive and negative lead wires 83 and 83 and the lead wire 84. .
With such connection, an integrated thin film solar cell having a high voltage output can be obtained while maintaining hot spot resistance.

Further, this photoelectric conversion module M1 includes a front cover such as white plate glass and a filler made of a transparent resin such as EVA (ethylene / vinyl acetate copolymer) disposed on the light receiving surface side of each photoelectric conversion element connector, A backside filler such as EVA and a weather resistant film (for example, a laminated sheet of an insulator, a metal foil, and an insulator) disposed on the back side of each photoelectric conversion element connector, and attached to the back side of the weather resistant film A terminal box (not shown). Two bypass diodes D are accommodated in the terminal box.
The positive and negative lead wires 83 and 83 and the lead wire 84 are taken out to the back side of the weather resistant film through through holes provided in the back side filler and the weather resistant film, and the positive and negative lead wires 83 and 83 are provided in the terminal box. The lead wire 84 is connected to two bypass diodes D.

The photoelectric conversion module M1 can be manufactured, for example, as follows.
First, a filler is arranged on the front cover, and a plurality of photoelectric conversion elements 10 are arranged as shown in FIG. 10 with the light receiving surface facing down, and first to third inter-element wiring members 17a, 17b, As shown in FIG. 10, a plurality of photoelectric conversion elements 10 are connected in series using 17c.
At this time, the photoelectric conversion elements 10 in which the first inter-element wiring members 17a are connected in advance to the second electrodes 7 are arranged on the filler on the front cover, and then the second and third inter-element wiring members 17b and 17c are arranged. You may connect each photoelectric conversion element 10 in the state which combined and used the photoelectric conversion element connection bodies U1 and U2. Alternatively, the photoelectric conversion element connection bodies U1 and U2 may be prepared in advance, arranged on the filler on the front cover, and then each first inter-element wiring member 17a may be connected to each first electrode 2. .

Next, the first electrode 2 of the first row of photoelectric conversion element connections U1 is connected to the bus bar 81, and each first inter-element wiring member 17a of the fourth row photoelectric conversion element connection body U1 is connected to the bus bar 81. The second inter-element wiring member 17b of the photoelectric conversion element connector U2 across the second and third rows is connected to the lead wire 84, and the positive lead wires 83 and 83 are connected to the bus bars 81 and 81, respectively.
Subsequently, the lead wires 83, 83, and 84 are passed through through holes provided in the back surface side filler, and the back surface side filler is disposed on the photoelectric conversion element connectors U1 and U2. And each lead wire 83, 83, 84 is passed through the through-hole provided in the weather resistant film, and a weather resistant film is arrange | positioned on a back surface side filler.
The laminate obtained in this manner is pressurized and heated using a vacuum laminating apparatus, so that the filler is melted and solidified. The lead wires 83, 83, 84 is connected, and the terminal box is adhered to the weather resistant film to obtain the photoelectric conversion module M1.

  According to the photoelectric conversion module M1, the plurality of photoelectric conversion elements 10 can be connected only from the back side using the first to third inter-element wiring members 17a, 17b, and 17c, so that the wiring work is easy. In addition, the time required for the wiring process can be shortened. Further, since the strip-shaped inter-element wiring members 17a to 17c are relatively inexpensive, the manufacturing cost can be reduced.

(Embodiment 8: Second photoelectric conversion module)
FIG. 11 is a schematic plan view of the back side of the second photoelectric conversion module according to Embodiment 8 of the present invention.
This photoelectric conversion module M2 includes a vertical-direction series photoelectric conversion element connection body U1 (see FIG. 6), a horizontal-direction serial embodiment photoelectric conversion element connection body U2 (see FIG. 7), and a horizontal It has a structure in which the photoelectric conversion element connector U3 (see FIG. 8) of Embodiment 5 in parallel with the direction is combined. In addition, in FIG. 11, the same code | symbol is attached | subjected to the element similar to Embodiment 1, 3-5, and the code | symbol U1, U2, U3 of a photoelectric conversion element connection body is abbreviate | omitted.

  In FIG. 11, four photoelectric conversion elements 10 are arranged in the vertical and horizontal directions, and a photoelectric conversion element connection body U1 in which three photoelectric conversion elements 10 are connected in series is arranged in the first and fourth columns from the left. A photoelectric conversion element connection body U1 in which two photoelectric conversion elements 10 are connected in series is arranged in the first and third columns, and two photoelectric conversion elements 10 are connected in series across the first and second columns. A conversion element connection body U2 is arranged, and a photoelectric conversion element connection body U3 in which two photoelectric conversion elements 10 are connected in parallel across the second and third rows is arranged, and the third and fourth rows are straddled. A photoelectric conversion module M2 is illustrated in which a photoelectric conversion element connection body U2 in which two photoelectric conversion elements 10 are connected in series is arranged.

  In the photoelectric conversion module M2, the first inter-element wiring members 17a of the photoelectric conversion elements 10 at the ends of the first and fourth rows of photoelectric conversion element connections U1 are connected to the bus bars 81 and 81, and the second row. The second inter-element wiring member 17b of the photoelectric conversion element connector U3 and the both bus bars 81, 81 across the third column are connected to the positive and negative lead wires 83, 83 for power extraction.

(Embodiment 9: Third photoelectric conversion module)
FIG. 12 is a schematic plan view of the back side of the third photoelectric conversion module according to Embodiment 9 of the present invention.
This photoelectric conversion module M3 includes a photoelectric conversion element connection body U1 (see FIG. 6) according to the third embodiment in series in the vertical direction, a photoelectric conversion element connection body U3 (see FIG. 8) according to the fifth embodiment in the horizontal direction, It has a structure in which the photoelectric conversion element connector U4 (see FIG. 9) of Embodiment 6 in parallel with the direction is combined. In FIG. 12, elements similar to those in Embodiments 1 and 3 to 6 are denoted by the same reference numerals, and reference numerals U <b> 1, U <b> 3 and U <b> 4 of the photoelectric conversion element connection body are omitted.

In FIG. 12, four photoelectric conversion elements 10 are arranged in the vertical and horizontal directions, and a photoelectric conversion element connection body U1 in which two photoelectric conversion elements 10 are connected in series is arranged in the first to fourth columns from the left. The photoelectric conversion element connection body U3 in which four photoelectric conversion elements 10 are connected in parallel across the fourth to fourth columns is arranged, and the photoelectric conversion in which the four photoelectric conversion elements 10 are connected in parallel across the first to fourth columns The element connection body U4 is arrange | positioned and the photoelectric conversion module M3 to which these were connected is illustrated.
In the photoelectric conversion module M3, the second inter-element wiring member 17b of the photoelectric conversion element connection body U3 and the second inter-element wiring member 17b of the photoelectric conversion element connection body U4 are connected to positive and negative lead wires 83 and 83 for power extraction. Has been.

(Other embodiments)
In the first embodiment, the case where the plurality of through-connection portions and the second electrodes are provided in the same number is illustrated, but one through-connection portion and two second electrodes may be provided. However, regardless of the size of the photoelectric conversion element, it is preferable to disperse and arrange the plurality of through-connection portions and the second electrode in that the power generated in the photoelectric conversion element 10 can be efficiently recovered.

1A is a plan view on the light-receiving surface side showing Embodiment 1 of the photoelectric conversion element of the present invention, and FIG. 1B is a plan view on the back side of the photoelectric conversion element of Embodiment 1. FIG. 2 is a cross-sectional view taken along line AA in FIG. 3A to 3D are cross-sectional views illustrating the manufacturing process of the photoelectric conversion element of the first embodiment. 4A to 4C are cross-sectional views for explaining manufacturing steps subsequent to FIG. 3D. FIG. 5 is a plan view of the back side of Embodiment 2 of the photoelectric conversion element of the present invention. FIG. 6 is a plan view of the back side of the first photoelectric conversion element connection body according to Embodiment 3 of the present invention. FIG. 7 is a plan view of the back surface side of the second photoelectric conversion element connector according to Embodiment 4 of the present invention. FIG. 8 is a plan view of the back surface side of the third photoelectric conversion element connector according to Embodiment 5 of the present invention. FIG. 9 is a plan view of the back surface side of the fourth photoelectric conversion element connector according to Embodiment 6 of the present invention. FIG. 10 is a plan view of the back side of the first photoelectric conversion module according to Embodiment 7 of the present invention. FIG. 11 is a schematic plan view of the back side of the second photoelectric conversion module according to Embodiment 8 of the present invention. FIG. 12 is a schematic plan view of the back side of the third photoelectric conversion module according to Embodiment 9 of the present invention.

Explanation of symbols

1 First semiconductor layer (p-type layer)
2 First electrode 3 Second semiconductor layer (n-type layer)
3a Surrounding part (n-type layer)
DESCRIPTION OF SYMBOLS 5 Light-receiving surface electrode 7,107 2nd electrode 9 Through-connection part 10 Photoelectric conversion element 10a 1st photoelectric conversion element 10b 2nd photoelectric conversion element 13 Metal electrode layer 15 High concentration p-type layer 17 Interelement wiring member 17a, 17b, 17c First, second and third inter-element wiring member 19 Separation region (n-type layer)
21 Separation groove 23 Antireflection film 25 P-type semiconductor substrate 25a Through hole M1, M2, M3 Photoelectric conversion module U1, U2, U3, U4 Photoelectric conversion element connector

Claims (10)

A first semiconductor layer of a first conductivity type; a first electrode disposed on a back surface side of the first semiconductor layer and electrically connected to the first semiconductor layer; and at least a portion in contact with the first semiconductor layer A second semiconductor layer of a second conductivity type disposed on the light-receiving surface side of the first semiconductor layer, and light reception provided on the light-receiving surface side of the second semiconductor layer so as to be electrically connected to the second semiconductor layer A surface electrode; a second electrode disposed on the back side of the first semiconductor layer; electrically separated from the first semiconductor layer and electrically connected to the second semiconductor layer; A through-connection portion that is electrically separated from the semiconductor layer and electrically connects the light-receiving surface electrode and the second electrode;
On the back surface side of the first semiconductor layer, the first electrode is disposed at least at a part of the outer periphery of the first semiconductor layer, and the second electrode from the portion facing the first electrode in the outer periphery of the first semiconductor layer. A photoelectric conversion element characterized in that an isolation region electrically isolated from the first semiconductor layer is provided over the periphery of the first semiconductor layer.   The outer shape of the outer periphery of the first semiconductor layer is a square, a metal electrode layer is formed in a region excluding the separation region on the back surface of the first semiconductor layer, and the first electrode is on one side of the outer periphery of the first semiconductor layer. The separation region is disposed from the opposite side of the outer periphery of the first semiconductor layer opposite to the first electrode to the periphery of the second electrode. Item 2. The photoelectric conversion element according to Item 1.   3. The photoelectric conversion element according to claim 1, wherein the isolation region includes a second semiconductor layer formed on a back surface of the first semiconductor layer. A plurality of the through-connection portions are arranged side by side in the longitudinal direction of the first electrode and in a direction orthogonal to this direction,
The second electrode is arranged in a dot shape on a plurality of through-connection portions,
4. The photoelectric conversion element according to claim 2, wherein the separation region is formed in a band shape surrounding a plurality of second electrode rows arranged in a direction orthogonal to the longitudinal direction. 5. A plurality of the through-connecting portions are arranged side by side in the longitudinal direction of the first electrode and in a direction orthogonal to this direction,
The second electrode is formed to extend in a strip shape on a plurality of through connection portions arranged in a direction orthogonal to the longitudinal direction,
The photoelectric conversion element according to claim 2, wherein the separation region is formed in a band shape surrounding the band-shaped second electrode.   6. The photoelectric conversion element according to claim 4, wherein the plurality of rows of the second electrodes arranged in the longitudinal direction of the first electrode are arranged at equal intervals. The first semiconductor layer has a high-concentration first conductivity type layer in a portion in contact with the metal electrode layer,
7. The isolation groove for insulatingly separating the high-concentration first conductivity type layer and the metal electrode layer from the second semiconductor layer is formed along an outer peripheral edge of the isolation region. The photoelectric conversion element as described in 2. Two or more photoelectric conversion elements according to any one of claims 1 to 7 disposed adjacent to each other, and an inter-element wiring member,
A photoelectric conversion element connection body in which a second electrode of one photoelectric conversion element and a first electrode of another photoelectric conversion element are electrically connected by the inter-element wiring member. Two or more photoelectric conversion elements according to any one of claims 1 to 7 disposed adjacent to each other, and an inter-element wiring member,
A photoelectric conversion element connection body in which first electrodes or second electrodes of one photoelectric conversion element and another photoelectric conversion element are electrically connected by the inter-element wiring member.   A plurality of photoelectric conversion element connection bodies according to claim 8 and a plurality of photoelectric conversion element connection bodies according to claim 9 are combined and arranged on a translucent support plate, and adjacent photoelectric conversions A photoelectric conversion module in which element connection bodies are electrically connected by the inter-element wiring member.

Images