JPS62109705U - - Google Patents

Info

Publication number
JPS62109705U
JPS62109705U JP19957285U JP19957285U JPS62109705U JP S62109705 U JPS62109705 U JP S62109705U JP 19957285 U JP19957285 U JP 19957285U JP 19957285 U JP19957285 U JP 19957285U JP S62109705 U JPS62109705 U JP S62109705U
Authority
JP
Japan
Prior art keywords
tube
flow path
less
electrodialysis
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19957285U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0323299Y2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19957285U priority Critical patent/JPH0323299Y2/ja
Publication of JPS62109705U publication Critical patent/JPS62109705U/ja
Application granted granted Critical
Publication of JPH0323299Y2 publication Critical patent/JPH0323299Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Separation Using Semi-Permeable Membranes (AREA)
JP19957285U 1985-12-27 1985-12-27 Expired JPH0323299Y2 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19957285U JPH0323299Y2 (enExample) 1985-12-27 1985-12-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19957285U JPH0323299Y2 (enExample) 1985-12-27 1985-12-27

Publications (2)

Publication Number Publication Date
JPS62109705U true JPS62109705U (enExample) 1987-07-13
JPH0323299Y2 JPH0323299Y2 (enExample) 1991-05-21

Family

ID=31161322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19957285U Expired JPH0323299Y2 (enExample) 1985-12-27 1985-12-27

Country Status (1)

Country Link
JP (1) JPH0323299Y2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착

Also Published As

Publication number Publication date
JPH0323299Y2 (enExample) 1991-05-21

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