JPS62107469U - - Google Patents

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Publication number
JPS62107469U
JPS62107469U JP20216385U JP20216385U JPS62107469U JP S62107469 U JPS62107469 U JP S62107469U JP 20216385 U JP20216385 U JP 20216385U JP 20216385 U JP20216385 U JP 20216385U JP S62107469 U JPS62107469 U JP S62107469U
Authority
JP
Japan
Prior art keywords
led array
field effect
effect transistor
mos field
driven
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20216385U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP20216385U priority Critical patent/JPS62107469U/ja
Publication of JPS62107469U publication Critical patent/JPS62107469U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a,b,cおよびdは、本発明実施例の
LEDアレイ装置、第2図aおよびbは夫々同装
置で使用するMOSFETとLEDとの内部抵抗
の温度特性を示す図である。 1a……プリント基板、1b……LEDチツプ
、1c……レンズ、1……LEDアレイ、2……
放熱板、3a……放熱フイン、3……MOSFE
T、4……パルス発生器、5……電源端子、6…
…ゲート電圧調整ボリユーム。
FIGS. 1a, b, c and d are diagrams showing an LED array device according to an embodiment of the present invention, and FIGS. 2a and 2b are diagrams showing the temperature characteristics of the internal resistance of the MOSFET and LED used in the same device, respectively. 1a...Printed circuit board, 1b...LED chip, 1c...lens, 1...LED array, 2...
Heat sink, 3a... Heat sink, 3...MOSFE
T, 4...Pulse generator, 5...Power terminal, 6...
...Gate voltage adjustment volume.

Claims (1)

【実用新案登録請求の範囲】 LEDアレイをMOS電界効果型トランジスタ
を用いて駆動すると共に、 該MOS電界効果型トランジスタを該LEDア
レイに熱的に接続するようにしたことを特徴とす
るLEDアレイ装置。
[Claims for Utility Model Registration] An LED array device characterized in that an LED array is driven using a MOS field effect transistor, and the MOS field effect transistor is thermally connected to the LED array. .
JP20216385U 1985-12-25 1985-12-25 Pending JPS62107469U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20216385U JPS62107469U (en) 1985-12-25 1985-12-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20216385U JPS62107469U (en) 1985-12-25 1985-12-25

Publications (1)

Publication Number Publication Date
JPS62107469U true JPS62107469U (en) 1987-07-09

Family

ID=31166286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20216385U Pending JPS62107469U (en) 1985-12-25 1985-12-25

Country Status (1)

Country Link
JP (1) JPS62107469U (en)

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