JPS6197554A - Plasma monitoring - Google Patents
Plasma monitoringInfo
- Publication number
- JPS6197554A JPS6197554A JP59218350A JP21835084A JPS6197554A JP S6197554 A JPS6197554 A JP S6197554A JP 59218350 A JP59218350 A JP 59218350A JP 21835084 A JP21835084 A JP 21835084A JP S6197554 A JPS6197554 A JP S6197554A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- light
- luminescence
- intensity
- specified chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
Landscapes
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野Ｊ
本発明は、プラズマ利用装置におけるプラズマ状態を正
確に把握するための方法に係）、％に％足対象化学棟の
発光波長近傍の波長をもった標準光によ）その特定対象
化学種の発光強度を補正するようＫしたプラズマモニタ
方法に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention J The present invention relates to a method for accurately grasping the plasma state in a plasma utilization device), which has a wavelength close to the emission wavelength of the target chemical building. The present invention relates to a plasma monitoring method in which the emission intensity of the specific target chemical species is corrected (using standard light).
〔発明の背景」
低温ガスの放電プラズマを利用するドライプロセス装置
のモニタ方法や装置としては特開昭５７−２０７８４９
号公報や特開昭５７−２０７８５０号公報釦開示されて
いるように１プラズマ発光を捉えこれを分光してプラズ
マ状態をモニタするものが知られている。しかしながら
、この方法では、プラズマ中から生ずる反応物質や使用
ガス等によるプラズマ観測窓の汚染や、観測窓材による
プラズマ発光の吸収、散乱干渉等によるプラズマ発光強
度の変動を補正し得ないという不具合がある。[Background of the Invention] A method and device for monitoring dry process equipment that utilizes low-temperature gas discharge plasma is disclosed in Japanese Patent Application Laid-Open No. 57-207849.
As disclosed in Japanese Patent Publication No. 57-207850, there are known devices that capture one plasma emission and spectrally analyze it to monitor the plasma state. However, this method has the disadvantage that it cannot correct for fluctuations in plasma emission intensity due to contamination of the plasma observation window due to reactants or gases generated in the plasma, absorption of plasma emission by the observation window material, scattering interference, etc. be.
〔発明の目的ｊ
よって本発明の目的は、プラズマ利用装置内で起こって
いるプラズマ反応状態を正確にモニタし得るプラズマモ
ニタ方法を供するにある。[Objective of the Invention j Accordingly, an object of the present invention is to provide a plasma monitoring method that can accurately monitor the plasma reaction state occurring within a plasma utilization device.
〔発明の概要Ｊ
この目的のため本発明は、これまでの問題点であるプラ
ズマ観測窓による特定対象化学種の発光強度の変動を補
正すべく、特定対象化学種の発光波長近傍の波長をもっ
た標準光を観測窓に透過あるいは反射させて透過光ある
いは反射光強度の変化量を検出したうえ、その変化量か
らプラズマ中の特定対象化学種の発光強度を補正するこ
とによってプラズマ状態を正確にモニタするようにした
ものである。[Summary of the Invention J] For this purpose, the present invention aims to correct the fluctuation of the emission intensity of a specific target chemical species due to the plasma observation window, which has been a problem up to now, by providing a wavelength near the emission wavelength of the specific target chemical species. By transmitting or reflecting standard light into an observation window to detect the amount of change in the intensity of the transmitted light or reflected light, and then correcting the emission intensity of a specific target chemical species in the plasma based on the amount of change, the plasma state can be accurately determined. It is designed to be monitored.
以下、本発明を第１図から第５図により説明する。 The present invention will be explained below with reference to FIGS. 1 to 5.
先ず本発明に係るドライプロセス装置について説明する
。第１図はその一例での構成概要を示したものである。First, a dry process apparatus according to the present invention will be explained. FIG. 1 shows an outline of the configuration of one example.
これによると低温ガス放電プラズマ状態用のドライプロ
セス装置本体１内のガスプラズマ５から放射される特定
対象化学種の発光７は測定窓８を透過後光検出機構３に
入るようＫされる。これと同様に光検出機構３と対向し
、測定窓８′の外部に設置された標準光源２からの標準
光６も測定窓８を透過して光検出機［３に入るようにさ
れる。光検出機構３に入った特定対象化学種の発光７と
標準光６はビームスプリッタ−９により２分されたうえ
、一方は特定対象化学種の発光の波長のみを透過可能な
干渉フィルタ１０とホトマル（光電子増倍管）１１を通
う電気信号に変換される。また他方は標準光の波長のみ
透過可能な干渉フィルタ１０′とホトマル１１′を通シ
電気信号に変換されるようになっている。電気信号に変
換され九両信号はデータ処理装置４に順次導かれて適当
に増幅されるが、この後標準光６の変化率Ａが第４図に
示す如くに演算されるものである。測定窓８，８′が汚
染されていない状態での光強度をＩｏ、その後のドライ
プロセス稼動中での光強度を工、として変化率Ａが工。According to this, the light emission 7 of the specific target chemical species emitted from the gas plasma 5 in the dry process apparatus main body 1 for low-temperature gas discharge plasma state is transmitted through the measurement window 8 and then enters the light detection mechanism 3. Similarly, standard light 6 from a standard light source 2 placed outside the measurement window 8' facing the photodetection mechanism 3 is also transmitted through the measurement window 8 and enters the photodetector [3]. The emitted light 7 and the standard light 6 of the specific target chemical species entering the photodetection mechanism 3 are split into two by a beam splitter 9, and one side is separated by an interference filter 10 and a photomultiplier that can transmit only the wavelength of the emitted light of the specific target chemical species. (photomultiplier tube) 11 and is converted into an electrical signal. The other light passes through an interference filter 10' that can transmit only the wavelength of standard light and a photomultiplier 11', and is converted into an electrical signal. The converted electric signals are sequentially guided to the data processing device 4 and appropriately amplified, after which the rate of change A of the standard light 6 is calculated as shown in FIG. The rate of change A is calculated by assuming that the light intensity when the measurement windows 8 and 8' are not contaminated is Io, and the light intensity during the subsequent operation of the dry process is E.
／Ｉ、として演算されるものである。しかして、第５図
に示すように特定対象化学種の見掛上での光強度がｂで
あるとすれば、そのときの変化率Ａを用い光強度すはｂ
ＸＡとして補正されることによって実際の特定対象化学
種の発光強度が正確に得られるものである。なお、ガス
グラズ７ｒ５は高周波電源１４からの高周波電力を電極
１２．１３間に印加することによって発生される。/I. As shown in Figure 5, if the apparent light intensity of the specific target chemical species is b, then using the rate of change A at that time, the light intensity is b.
By correcting as XA, the actual luminescence intensity of the specific target chemical species can be accurately obtained. Note that the gas glass 7r5 is generated by applying high frequency power from the high frequency power source 14 between the electrodes 12 and 13.
最後に本発明に係るドライプロセス装置の他の実施態様
を第２図、第３図により説明する。標準光源２は第１図
に示す如くに設置されてもよいが、第２図、第３図に示
すようにドライプロセス装置本体１形状や作業性を考慮
し他の場所に設置することも考えられるというものでち
る。先ず第３図に示す場合について説明すれば、これは
、第１図のよ５に観測窓８′の外部に設置し得ない場合
や観測窓８がさいドライプロセス装置本体１の場合には
、標準光源２を装置本体１内に設置しようというもので
ある。この場合、標準光源２が汚染されないように保護
カバー１５がガスプラズマ５側に収シ付けられるように
なっている。次に第３図について説明すれば、標準光６
が汚れた観測窓８を透通した時の光強度の変化率が、第
３図に示す反射光６“の光強度の変化率と相関がある場
合には、標準光るの反射光る“の変化率を用いても特定
対象化学種の発光強度を補正し得ることから、光検出機
構６側に標準光源２を設置することも考えられるという
わけである。Finally, another embodiment of the dry process apparatus according to the present invention will be described with reference to FIGS. 2 and 3. The standard light source 2 may be installed as shown in Fig. 1, but it may also be installed in another location as shown in Figs. 2 and 3, taking into consideration the shape of the dry process equipment main body 1 and workability. It is said that it will be done. First, the case shown in FIG. 3 will be explained. This is a case where the observation window 8' cannot be installed outside the observation window 8' as shown in FIG. The standard light source 2 is to be installed inside the main body 1 of the device. In this case, the protective cover 15 is placed on the gas plasma 5 side so that the standard light source 2 is not contaminated. Next, to explain Fig. 3, standard light 6
If the rate of change in the light intensity when the light passes through the dirty observation window 8 is correlated with the rate of change in the light intensity of the reflected light 6'' shown in Figure 3, then the change in the standard light and the reflected light Since the luminescence intensity of the specific target chemical species can be corrected even by using the ratio, it is also possible to install the standard light source 2 on the light detection mechanism 6 side.
以上説明したよ５に本発明による場合は、プラズマ利用
ドライプロセス装置内におけるプラズマ状態を、観測ま
どの汚れ等による変動をＭ正して正確にモニタし得、ひ
いては品質の向上、歩留り向上部に効果がある。As explained above, according to the present invention, it is possible to accurately monitor the plasma state in the plasma-based dry process equipment by correcting for fluctuations caused by dirt in the observation oven, etc., which in turn contributes to quality improvement and yield improvement. effective.
第１図、第２図および第３図は、それぞれ本発明に係る
ドライプロセス装置の実施態様を示す図、第４図、第５
図は、特定対象化字種の光強度の補正方法を説明するた
めの図である。1, 2, and 3 are diagrams showing embodiments of the dry process apparatus according to the present invention, FIG. 4, and FIG. 5, respectively.
The figure is a diagram for explaining a method of correcting the light intensity of the specified target character type.
Claims (1)
のプラズマモニタ方法であって、特定対象化学種の発光
波長近傍の波長をもった標準光を観測窓に透過あるいは
反射せしめ、観測窓からの透過光あるいは反射光の光強
度の変化量よりプラズマ中の特定対象化学種の発光強度
を補正することを特徴とするプラズマモニタ方法。A plasma monitoring method for dry process equipment that uses discharge plasma of low-temperature gas, in which standard light with a wavelength near the emission wavelength of a specific target chemical species is transmitted or reflected through an observation window, and the transmitted light from the observation window or A plasma monitoring method characterized in that the luminescence intensity of a specific target chemical species in plasma is corrected based on the amount of change in the light intensity of reflected light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59218350A JPS6197554A (en) | 1984-10-19 | 1984-10-19 | Plasma monitoring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59218350A JPS6197554A (en) | 1984-10-19 | 1984-10-19 | Plasma monitoring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6197554A true JPS6197554A (en) | 1986-05-16 |
Family
ID=16718496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59218350A Pending JPS6197554A (en) | 1984-10-19 | 1984-10-19 | Plasma monitoring |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6197554A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0751382A2 (en) * | 1995-06-28 | 1997-01-02 | Kyoto Dai-ichi Kagaku Co., Ltd. | Method and apparatus for measuring spectra |
| JP2010526998A (en) * | 2007-05-07 | 2010-08-05 | ヴェリティー インストルメンツ，インコーポレイテッド | Calibration of a radiometric optical monitoring system used for fault detection and process monitoring |
| JP2010216915A (en) * | 2009-03-16 | 2010-09-30 | Nippon Steel Corp | Method and device for continuously monitoring molten steel |
-
1984
- 1984-10-19 JP JP59218350A patent/JPS6197554A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0751382A2 (en) * | 1995-06-28 | 1997-01-02 | Kyoto Dai-ichi Kagaku Co., Ltd. | Method and apparatus for measuring spectra |
| EP0751382A3 (en) * | 1995-06-28 | 1997-05-07 | Kyoto Daiichi Kagaku Kk | Method and apparatus for measuring spectra |
| JP2010526998A (en) * | 2007-05-07 | 2010-08-05 | ヴェリティー インストルメンツ，インコーポレイテッド | Calibration of a radiometric optical monitoring system used for fault detection and process monitoring |
| JP2010216915A (en) * | 2009-03-16 | 2010-09-30 | Nippon Steel Corp | Method and device for continuously monitoring molten steel |
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