JPS6194559A - Drive circuit for semiconductor element - Google Patents
Drive circuit for semiconductor elementInfo
- Publication number
- JPS6194559A JPS6194559A JP21421984A JP21421984A JPS6194559A JP S6194559 A JPS6194559 A JP S6194559A JP 21421984 A JP21421984 A JP 21421984A JP 21421984 A JP21421984 A JP 21421984A JP S6194559 A JPS6194559 A JP S6194559A
- Authority
- JP
- Japan
- Prior art keywords
- amplifier
- surface wave
- signal
- semiconductor device
- drive circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、表面波素子を用いてサイリスタやパワーＭ
ＯＳＦＥＴ等の半導体素子を駆動する半導体素子用駆動
回路に関する。[Detailed Description of the Invention] [Field of Industrial Application] This invention uses surface wave elements to produce thyristors and power M
The present invention relates to a semiconductor device drive circuit that drives a semiconductor device such as an OSFET.
第２図は従来のサイリスタ駆動回路の一列（特開昭５０
−１１５７５号公報参照）を示す回路図である。同図に
おいて、１はサイリスタフに対してオン指令信号を発生
するオン指令発生器、２は表面波素子５を駆動するため
の信号を発生する共振周波数発生器、３はこれら信号を
合成するための変調器、４は増幅器、５は表面波素子、
６は整流器、７はサイリスタである。Figure 2 shows a row of conventional thyristor drive circuits (Japanese Patent Application Laid-open No.
11575). In the figure, 1 is an on-command generator that generates an on-command signal for the thyristor, 2 is a resonant frequency generator that generates a signal to drive the surface wave element 5, and 3 is for synthesizing these signals. 4 is an amplifier, 5 is a surface wave element,
6 is a rectifier, and 7 is a thyristor.
変調器３を介して取り出されるオン指令信号は増幅器４
を経て表面波素子５に与えられるので、表面波素子５は
このオン指令信号と増幅器４からの電力とを同時に伝達
し、これによってサイリスタ７を駆動することができる
。なお、整流器６は、表面波素子５４からの交流（正弦
波）出力を直流に変換するために設けられる。The ON command signal taken out via the modulator 3 is sent to the amplifier 4.
Since the on-command signal and the power from the amplifier 4 are transmitted to the surface wave element 5 at the same time, the thyristor 7 can be driven thereby. Note that the rectifier 6 is provided to convert the alternating current (sine wave) output from the surface wave element 54 into direct current.
表面波素子はよく知られているように、圧電効果（ピエ
ゾ効果）素子を媒体とするセラミックであり、電気振動
→機械揚動→電気振動の経路で駆動電力とオン信号を同
時に伝達し得る、絶縁性の非常に高い素子であるが、機
械的振動が定常状態に達する迄に相当な時間を要するた
め、オン信号の立上り、立下りが遅れ、したがって、高
周波スイッチングには不向きであるという問題点を有し
ている。As is well known, a surface wave element is a ceramic material that uses a piezoelectric effect element as a medium, and can simultaneously transmit driving power and an on-signal through the path of electrical vibration → mechanical lift → electrical vibration. Although it is an extremely highly insulating element, the problem is that it takes a considerable amount of time for mechanical vibration to reach a steady state, so the rise and fall of the on signal is delayed, making it unsuitable for high frequency switching. have.
〔問題点を解決するための手段および作用〕半導体素子
に対するオン信号の伝達を早めるために、オン信号は表
面波素子を介することなくパルスアンプやフォトカブ２
等の絶縁素子等を介して高速に伝達するようＫしたもの
である。[Means and actions for solving the problem] In order to speed up the transmission of the ON signal to the semiconductor element, the ON signal is sent to the pulse amplifier or photocube 2 without passing through the surface wave element.
It is designed so that it can be transmitted at high speed through insulating elements such as.
第１図はこの発明の実施例を示す構成図である。 FIG. 1 is a block diagram showing an embodiment of the present invention.
同図において、８はパルストランス８１および増幅器８
２からなる増幅部であり、１〜７は第１図に示されるも
のと同様である。In the figure, 8 is a pulse transformer 81 and an amplifier 8.
The amplifier section consists of 2, and 1 to 7 are the same as those shown in FIG.
すなわち、この実施列はサイリスタ７を駆動するための
増幅器８２を設け、この電源は表面波素子５から得るよ
うにするとともに、パルストランス８１等の絶縁素子を
介してオン信号を伝送するようにした点が特徴である。That is, this implementation array is provided with an amplifier 82 for driving the thyristor 7, and this power source is obtained from the surface wave element 5, and an on signal is transmitted through an insulating element such as a pulse transformer 81. It is characterized by points.
つまり、オン指令発生器１からのオン指令信号を、従来
の如く表面波素子５を介して伝達するのではなく、パル
ストランス８１等の絶縁素子を用いて伝達することによ
り、オン指令信号の伝達を高速に行ない得るようＫした
ものである。なお、絶縁素子としては、上述の如きパル
ストランスのかわりに７オトカプラを用いることもでき
る。In other words, the on-command signal from the on-command generator 1 is transmitted by using an insulating element such as the pulse transformer 81 instead of via the surface wave element 5 as in the conventional case. It is designed so that it can be carried out at high speed. Note that as the insulating element, a 7-oto coupler can also be used instead of the above-mentioned pulse transformer.
この発明によれば、表面波素子を半導体素子駆動用増幅
器の電源として用いるとともに、オン信号は高速な伝達
が可能なパルストランスやフォトカブラを用いて伝達す
るようにしたので信号の伝達が速くなり、したがって、
高速スイッチングが可能となる利点がもたらされる。According to this invention, a surface wave element is used as a power source for an amplifier for driving a semiconductor element, and an on-signal is transmitted using a pulse transformer or a photocoupler that can transmit a high-speed signal, so that the signal can be transmitted quickly. ,therefore,
The advantage is that fast switching is possible.
第１図はこの発明の実施例を示す回路図、第２図は従来
のサイリスタ駆動回路の一列を示す回路図である。
符号説明
ｌ・・・・・・オン指令融器、２・・・・・・共振周波
数発生器、３・・・・・・変調器、４，８２・・・・・
・増幅器、５・・・・・・表面波素子、６・・・・・・
整流器、７・・・・・・サイリスタ、８・・・・・・増
＋１ｌｉｉ１５Ｅ、８１・・・・・・パルストランス。FIG. 1 is a circuit diagram showing an embodiment of the present invention, and FIG. 2 is a circuit diagram showing one row of a conventional thyristor drive circuit. Description of symbols 1...On command fuser, 2...Resonant frequency generator, 3...Modulator, 4, 82...
・Amplifier, 5...Surface wave element, 6...
Rectifier, 7... Thyristor, 8... Increase +1lii15E, 81... Pulse transformer.
Claims (1)
導体素子用駆動回路において、該表面波素子を介して電
源を供給され半導体素子を駆動する増幅器と、該増幅器
へ他の絶縁手段を介して半導体素子に対するオン指令を
与えるオン指令供給手段とを有してなる半導体素子用駆
動回路。A semiconductor device drive circuit including a surface wave device capable of driving a semiconductor device while insulating the semiconductor device includes an amplifier that is supplied with power through the surface wave device to drive the semiconductor device, and an amplifier that is supplied with power through the surface wave device to drive the semiconductor device, and an amplifier that is supplied with power through the surface wave device and drives the semiconductor device through other insulation means. 1. A drive circuit for a semiconductor device, comprising: on-command supply means for giving an on-command to a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21421984A JPS6194559A (en) | 1984-10-15 | 1984-10-15 | Drive circuit for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21421984A JPS6194559A (en) | 1984-10-15 | 1984-10-15 | Drive circuit for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6194559A true JPS6194559A (en) | 1986-05-13 |
Family
ID=16652183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21421984A Pending JPS6194559A (en) | 1984-10-15 | 1984-10-15 | Drive circuit for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6194559A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753891A (en) * | 1994-08-31 | 1998-05-19 | Tokyo Electron Limited | Treatment apparatus |
-
1984
- 1984-10-15 JP JP21421984A patent/JPS6194559A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753891A (en) * | 1994-08-31 | 1998-05-19 | Tokyo Electron Limited | Treatment apparatus |
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