JPS6191357A - Vapor deposition device - Google Patents

Vapor deposition device

Info

Publication number
JPS6191357A
JPS6191357A JP21384984A JP21384984A JPS6191357A JP S6191357 A JPS6191357 A JP S6191357A JP 21384984 A JP21384984 A JP 21384984A JP 21384984 A JP21384984 A JP 21384984A JP S6191357 A JPS6191357 A JP S6191357A
Authority
JP
Japan
Prior art keywords
conductor
source
vapor deposition
substrate
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21384984A
Other languages
Japanese (ja)
Inventor
Norio Nakamura
典生 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21384984A priority Critical patent/JPS6191357A/en
Publication of JPS6191357A publication Critical patent/JPS6191357A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the arrival of electrons at the surface of a substrate and to prevent the damage of a grown crystal by providing a means for impressing horizontally a magnetic field in a chamber. CONSTITUTION:A conductor source is put into a crucible 1 in a vapor deposition machine of a bell-jar type, etc. The electron beam led out of an E-gun 2 in the process of vapor deposition is bent to strike against the conductor source in the crucible 1. The heated source melts and begins to evaporate When a shutter plate 3 is opened, the evaporated conductor vapor 17 advances rectilinearly in all directions and part thereof arrive at a substrate holder 4, thus forming a conductor film. The electrons 6 reflected by the source surface are bent by the magnetic field into the direction perpendicular to the advancing direction of the electron and magnetic flux when the magnetic field is impressed in the above-mentioned process by disposing permanent magnets or electromagnets 5, 5' having suitable intensity so as to face each other. The conductor vapor 7 having no electric charge advances rectilinearly and arrives at the Si substrate. The thin film is thus formed in the state of E-gun damage eliminated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造装置、より詳しく述べるならば、5
i基板上に配線層または電極を形成するE−ガン蒸着機
に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor manufacturing apparatus, and more specifically, to a semiconductor manufacturing apparatus.
This invention relates to an E-gun evaporation machine for forming wiring layers or electrodes on i-substrates.

〔従来の技術〕[Conventional technology]

IC,L8I、ショットキーダイオード等の半導体装置
を製造する過程において、アルミニウムー〇導体を絶縁
層上もしくは、Si基板上に形成する工程があるが、そ
の形成には、スパッタ、蒸着などの方法が現在用られて
いる。その中で、E−ガン蒸着においては、従来の装置
構造では、電子ビームが導体ソースにあたり、はとんど
は、アースされるが、ソース表面ではねかえった電子が
、いわゆるEガンダメージと呼ばれる8i基板の結晶に
ダメージを与えることが問題となっている。
In the process of manufacturing semiconductor devices such as ICs, L8Is, and Schottky diodes, there is a step of forming an aluminum conductor on an insulating layer or a Si substrate. Currently used. Among these, in E-gun evaporation, in the conventional equipment structure, the electron beam hits the conductive source and is mostly grounded, but the electrons that bounce off the source surface cause so-called E-gun damage. The problem is that it damages the crystal of the 8i substrate.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

本発明の目的は、成長結晶に損傷を与えることのない蒸
着装置を提供することにある。
An object of the present invention is to provide a vapor deposition apparatus that does not damage growing crystals.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、蒸着装置チャンバー内に水平方−に磁
界を印加する印加手段を備えた蒸着装置を得る。これに
より、成長したSi基板上へ電子の到達を防ぎ、成長結
晶への損傷を防ぐことができ゛る。
According to the present invention, a vapor deposition apparatus is provided which is provided with an application means for applying a magnetic field horizontally into a vapor deposition apparatus chamber. This prevents electrons from reaching the grown Si substrate and prevents damage to the grown crystal.

〔実施例〕□ 以下、図面を参照しχ本発明をより詳細に説明する。[Example] □ Hereinafter, the present invention will be explained in more detail with reference to the drawings.

第1図はペルジャータイプの蒸着機の構造図である。ル
ツボ1のなかには、導体ソースが入れられている。真空
蒸着の過程において、E−ガン2より引き出された電子
ビームは曲げられ、ルツボ2内の導体ソースにあたり、
ソースを加熱する。
FIG. 1 is a structural diagram of a Pelger type vapor deposition machine. A conductive source is placed in the crucible 1. In the process of vacuum evaporation, the electron beam extracted from the E-gun 2 is bent and hits the conductor source inside the crucible 2.
Heat the sauce.

加熱されたソースは溶融し、次第に気化し始める。The heated sauce melts and gradually begins to evaporate.

そしてシャッター板3を開けると、その気化した導体蒸
気7はあらゆる方向に直進し、その一部が基板ホルダー
4に到達し、導体膜を形成する。この過程において、シ
ャッター板3が開くと同時に気化した導体蒸気の他に導
体ソースを加熱し続けている電子ビームの一部もソース
表面ではねかえり基板ホルダー4上の出基板まで到達し
て8i基板の結晶に損傷を与える。この損傷を防ぐため
に、適当な強度の永久磁石または電磁石5,5′を磁極
が相対する(たとえば磁石5はN極、磁石5′はS極)
ように配置し、磁界をかけると、ソース表面で反射した
電子6は磁界によって、電子の進行方向と磁束とに垂直
な方向に曲げられ、アースされたチャン/(−壁に吸収
される。
When the shutter plate 3 is opened, the vaporized conductor vapor 7 travels straight in all directions, and a part of it reaches the substrate holder 4 to form a conductor film. In this process, at the same time as the shutter plate 3 opens, in addition to the vaporized conductive vapor, a part of the electron beam that continues to heat the conductive source also bounces off the source surface and reaches the output substrate on the substrate holder 4, where it reaches the 8i substrate. Damage the crystal. To prevent this damage, set permanent magnets or electromagnets 5 and 5' of appropriate strength so that their magnetic poles are opposite each other (for example, magnet 5 is N pole, magnet 5' is S pole).
When a magnetic field is applied to the source surface, the electrons 6 reflected from the source surface are bent by the magnetic field in a direction perpendicular to the electron traveling direction and the magnetic flux, and are absorbed by the grounded wall.

また一方、電荷を帯びていない導体蒸気7は磁界の影響
を受けないため直進しSi基板へ到達するのでEガンダ
メージを除去した状態で薄膜を形成することができる。
On the other hand, since the uncharged conductor vapor 7 is not affected by the magnetic field, it travels straight and reaches the Si substrate, so that a thin film can be formed with E gun damage removed.

〔発明の効果〕〔Effect of the invention〕

本発明は成長結晶に損傷を与えない蒸着装置を得ること
ができる。なお、本発明をペルジャー型の蒸着機の例で
説明したが、基板上に薄膜を形成する過程において、使
用されるE−ガン蒸着機に対してはすべて適用できるこ
とは明らかである。
The present invention can provide a vapor deposition apparatus that does not damage growing crystals. Although the present invention has been described using an example of a Pelger type vapor deposition machine, it is clear that the present invention can be applied to any E-gun vapor deposition machine used in the process of forming a thin film on a substrate.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例による蒸着機を横から見た断
面であり、第2図は、上方より見た構造の断面図である
。 1・・・・・・導体ソースを入れたルツボ、2・・・・
・・E−ガン、3・・・・・・シャッター板、4・・・
・・・基板ホルダー。 5及び5′・・・・・・磁石、6・・・・・・ソース表
面より反射した電子、7・・・・・・導体蒸気、8・・
・・・・電子ビーム。 代理人 弁理士  内 原   晋′−〜冥又−L・・
FIG. 1 is a cross-sectional side view of a vapor deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the structure viewed from above. 1... Crucible containing conductor source, 2...
...E-gun, 3...Shutter plate, 4...
... Board holder. 5 and 5'... Magnet, 6... Electrons reflected from the source surface, 7... Conductor vapor, 8...
...Electron beam. Agent Patent Attorney Susumu Uchihara ~ ~ Meimata L...

Claims (1)

【特許請求の範囲】[Claims]  電子ビーム源と、被蒸着源ソースと、蒸着基板を支技
する基板ホルダーと、被蒸着源ソースと基板ホルダーと
の間に磁界を与える手段とを含むことを特徴とする蒸着
装置。
A vapor deposition apparatus comprising an electron beam source, a source to be evaporated, a substrate holder for supporting a evaporation substrate, and means for applying a magnetic field between the source to be evaporated and the substrate holder.
JP21384984A 1984-10-12 1984-10-12 Vapor deposition device Pending JPS6191357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21384984A JPS6191357A (en) 1984-10-12 1984-10-12 Vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21384984A JPS6191357A (en) 1984-10-12 1984-10-12 Vapor deposition device

Publications (1)

Publication Number Publication Date
JPS6191357A true JPS6191357A (en) 1986-05-09

Family

ID=16646032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21384984A Pending JPS6191357A (en) 1984-10-12 1984-10-12 Vapor deposition device

Country Status (1)

Country Link
JP (1) JPS6191357A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104498879A (en) * 2014-12-26 2015-04-08 合肥彩虹蓝光科技有限公司 Evaporator capable of reducing consumption of Au of LED electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104498879A (en) * 2014-12-26 2015-04-08 合肥彩虹蓝光科技有限公司 Evaporator capable of reducing consumption of Au of LED electrode

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