JPS6187833A - 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法 - Google Patents

高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法

Info

Publication number
JPS6187833A
JPS6187833A JP59208304A JP20830484A JPS6187833A JP S6187833 A JPS6187833 A JP S6187833A JP 59208304 A JP59208304 A JP 59208304A JP 20830484 A JP20830484 A JP 20830484A JP S6187833 A JPS6187833 A JP S6187833A
Authority
JP
Japan
Prior art keywords
atoms
phase
different
base
supersaturated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59208304A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6363620B2 (enExample
Inventor
Hirotaro Mori
博太郎 森
Hiroshi Fujita
広志 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Osaka NUC
Original Assignee
Osaka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka University NUC filed Critical Osaka University NUC
Priority to JP59208304A priority Critical patent/JPS6187833A/ja
Priority to US06/776,150 priority patent/US4670291A/en
Priority to DE8585306680T priority patent/DE3572845D1/de
Priority to EP85306680A priority patent/EP0181073B1/en
Publication of JPS6187833A publication Critical patent/JPS6187833A/ja
Publication of JPS6363620B2 publication Critical patent/JPS6363620B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C23C12/02—Diffusion in one step
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/60—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using solids, e.g. powders, pastes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP59208304A 1984-10-05 1984-10-05 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法 Granted JPS6187833A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59208304A JPS6187833A (ja) 1984-10-05 1984-10-05 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法
US06/776,150 US4670291A (en) 1984-10-05 1985-09-13 Method of controlling supersaturated injection and concentration of exotic atoms into deep portions of a solid with a high energy electron beam
DE8585306680T DE3572845D1 (en) 1984-10-05 1985-09-19 Method for controlling the injection and concentration of a supersaturation of exotic atoms deeply into a solid material
EP85306680A EP0181073B1 (en) 1984-10-05 1985-09-19 Method for controlling the injection and concentration of a supersaturation of exotic atoms deeply into a solid material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59208304A JPS6187833A (ja) 1984-10-05 1984-10-05 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法

Publications (2)

Publication Number Publication Date
JPS6187833A true JPS6187833A (ja) 1986-05-06
JPS6363620B2 JPS6363620B2 (enExample) 1988-12-08

Family

ID=16554032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59208304A Granted JPS6187833A (ja) 1984-10-05 1984-10-05 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法

Country Status (4)

Country Link
US (1) US4670291A (enExample)
EP (1) EP0181073B1 (enExample)
JP (1) JPS6187833A (enExample)
DE (1) DE3572845D1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0674501B2 (ja) * 1985-02-27 1994-09-21 大阪大学長 電子線による異種原子の固体内注入方法
US5171992A (en) * 1990-10-31 1992-12-15 International Business Machines Corporation Nanometer scale probe for an atomic force microscope, and method for making same
GB9114038D0 (en) * 1991-06-26 1991-08-14 Atomic Energy Authority Uk Gas sensor
US5166919A (en) * 1991-07-11 1992-11-24 International Business Machines Corporation Atomic scale electronic switch

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2911533A (en) * 1957-12-24 1959-11-03 Arthur C Damask Electron irradiation of solids
DE1614854A1 (de) * 1966-12-30 1970-12-23 Texas Instruments Inc Verfahren zur Erzeugung von UEbergaengen in Halbleitern
CA1041881A (en) * 1974-09-11 1978-11-07 Niels N. Engel Coated steel product and process of producing the same
CA1095387A (en) * 1976-02-17 1981-02-10 Conrad M. Banas Skin melting
GB2073254B (en) * 1980-04-09 1984-05-23 Atomic Energy Authority Uk Ion implanting metal coated ferrous surfaces
US4359486A (en) * 1980-08-28 1982-11-16 Siemens Aktiengesellschaft Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
US4532149A (en) * 1981-10-21 1985-07-30 The United States Of America As Represented By The United States Department Of Energy Method for producing hard-surfaced tools and machine components
GB2125442B (en) * 1982-05-24 1986-02-19 Atomic Energy Authority Uk A procedure for the hardening of materials
US4486247A (en) * 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
DE3224810A1 (de) * 1982-07-02 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung harter, verschleissfester randschichten auf einem metallischen werkstoff

Also Published As

Publication number Publication date
EP0181073B1 (en) 1989-09-06
US4670291A (en) 1987-06-02
JPS6363620B2 (enExample) 1988-12-08
EP0181073A1 (en) 1986-05-14
DE3572845D1 (en) 1989-10-12

Similar Documents

Publication Publication Date Title
Stepanov et al. Fabrication of metal nanoparticles in sapphire by low-energy ion implantation
Wesch et al. Damage evolution and amorphization in semiconductors under ion irradiation
JPS61204372A (ja) 電子線による異種原子の固体内注入を利用した材料の非晶質化方法
Baglin et al. Pulsed proton beam annealing: Semiconductors and silicides
JPS6187833A (ja) 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法
Bench et al. Transmission electron microscopy investigation of the damage produced in individual displacement cascades in GaAs and GaP
Allen et al. In situ ion beam research in Argonne's intermediate voltage electron microscope
Jiang et al. Ion beam analysis of irradiation effects in 6H–SiC
Devi et al. Influence of thermal annealing and radiation enhanced diffusion processes on surface plasmon resonance of gold implanted dielectric matrices
JPS61195972A (ja) 電子線による異種原子の固体内注入方法
Jaouen et al. Ion-induced premartensitic transformation and amorphization in Ni-Al
Koike et al. Effect of projectile mass on amorphization of CuTi
Bind Ion implanted modification of nanomaterials for semiconductor devices and other applications
Fortuna et al. Synergetic effects of dual-beam implantation on the microstructural development in silicon
Riviere et al. In situ phase changes in a Fe-40 at.% Al ordered alloy during ion implantation: TEM study
Erramli et al. Ion chanelling
Amekura The first formation of ion tracks in diamond via MeV C60 ion irradiation
JPH06122977A (ja) 電子線による異種原子の固体内注入方法
Lewis Evidence for helium trapping to oxygen sites in titanium
Hung et al. Ion‐induced solid solution and ordered compound formation in Au/Cu bilayers
Dovbnya et al. Procedure of nanodimensional amorphous-microcrystalline structure formation by radiation in single crystal silicon
Bashir et al. Modification in electrical conductivity correlated with surface, structural & optical characteristics of graphite ions implanted CR-39
Mori et al. High resolution electron microscopy study on crystallization of gold-implanted amorphous SiC
Cao et al. Irradiation Induced Defects by Fe-Ion in 316L Stainless Steel Studied by Positron Annihilation Spectroscopy
Chen et al. The analysis of microstructure of helium bubbles in 316L SS induced by 3.02 MeV He ion irradiation

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term