DE3572845D1 - Method for controlling the injection and concentration of a supersaturation of exotic atoms deeply into a solid material - Google Patents

Method for controlling the injection and concentration of a supersaturation of exotic atoms deeply into a solid material

Info

Publication number
DE3572845D1
DE3572845D1 DE8585306680T DE3572845T DE3572845D1 DE 3572845 D1 DE3572845 D1 DE 3572845D1 DE 8585306680 T DE8585306680 T DE 8585306680T DE 3572845 T DE3572845 T DE 3572845T DE 3572845 D1 DE3572845 D1 DE 3572845D1
Authority
DE
Germany
Prior art keywords
supersaturation
deeply
injection
concentration
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585306680T
Other languages
German (de)
English (en)
Inventor
Hirotaro Mori
Hiroshi Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Osaka NUC
Original Assignee
Osaka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka University NUC filed Critical Osaka University NUC
Application granted granted Critical
Publication of DE3572845D1 publication Critical patent/DE3572845D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C23C12/02—Diffusion in one step
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/60—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using solids, e.g. powders, pastes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE8585306680T 1984-10-05 1985-09-19 Method for controlling the injection and concentration of a supersaturation of exotic atoms deeply into a solid material Expired DE3572845D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59208304A JPS6187833A (ja) 1984-10-05 1984-10-05 高エネルギ−電子線による固体深部への異種原子の過飽和注入と濃度の制御方法

Publications (1)

Publication Number Publication Date
DE3572845D1 true DE3572845D1 (en) 1989-10-12

Family

ID=16554032

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585306680T Expired DE3572845D1 (en) 1984-10-05 1985-09-19 Method for controlling the injection and concentration of a supersaturation of exotic atoms deeply into a solid material

Country Status (4)

Country Link
US (1) US4670291A (enExample)
EP (1) EP0181073B1 (enExample)
JP (1) JPS6187833A (enExample)
DE (1) DE3572845D1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0674501B2 (ja) * 1985-02-27 1994-09-21 大阪大学長 電子線による異種原子の固体内注入方法
US5171992A (en) * 1990-10-31 1992-12-15 International Business Machines Corporation Nanometer scale probe for an atomic force microscope, and method for making same
GB9114038D0 (en) * 1991-06-26 1991-08-14 Atomic Energy Authority Uk Gas sensor
US5166919A (en) * 1991-07-11 1992-11-24 International Business Machines Corporation Atomic scale electronic switch

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2911533A (en) * 1957-12-24 1959-11-03 Arthur C Damask Electron irradiation of solids
DE1614854A1 (de) * 1966-12-30 1970-12-23 Texas Instruments Inc Verfahren zur Erzeugung von UEbergaengen in Halbleitern
CA1041881A (en) * 1974-09-11 1978-11-07 Niels N. Engel Coated steel product and process of producing the same
CA1095387A (en) * 1976-02-17 1981-02-10 Conrad M. Banas Skin melting
GB2073254B (en) * 1980-04-09 1984-05-23 Atomic Energy Authority Uk Ion implanting metal coated ferrous surfaces
US4359486A (en) * 1980-08-28 1982-11-16 Siemens Aktiengesellschaft Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
US4532149A (en) * 1981-10-21 1985-07-30 The United States Of America As Represented By The United States Department Of Energy Method for producing hard-surfaced tools and machine components
GB2125442B (en) * 1982-05-24 1986-02-19 Atomic Energy Authority Uk A procedure for the hardening of materials
US4486247A (en) * 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
DE3224810A1 (de) * 1982-07-02 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung harter, verschleissfester randschichten auf einem metallischen werkstoff

Also Published As

Publication number Publication date
EP0181073B1 (en) 1989-09-06
US4670291A (en) 1987-06-02
JPS6363620B2 (enExample) 1988-12-08
JPS6187833A (ja) 1986-05-06
EP0181073A1 (en) 1986-05-14

Similar Documents

Publication Publication Date Title
EP0179442A3 (en) Stabilized composition containing inositoltriphosphate and method for stabilizing the composition
DE3474105D1 (en) Cleaning material and method for its manufacture
PT81434A (en) A method for the treatment of packing material
EP0164814A3 (en) Liquid crystalline ester compounds and mixtures thereof
EP0186492A3 (en) Method for treating materials with organopolysiloxane compounds
EP0188812A3 (en) Method for treating the surface of a thin porous film material
CS880285A2 (en) Method of assemblies' feed and withdrawal and device for its realization
IL75278A0 (en) Improved silicon oxynitride material and process for forming same
HUT42233A (en) Method for treating sowing-seeds and sowing-seeds having improved features
AR242334A1 (es) Aditivos inhibidores de la evaporacion de las composiciones rociables de productos quimicos agricolas, procedimiento para prepararlos y composiciones rociables a base de dichos aditivos.
GB2170327B (en) Method of controlling fuel injection
DE3572845D1 (en) Method for controlling the injection and concentration of a supersaturation of exotic atoms deeply into a solid material
DE3571845D1 (en) Treatment of archival material
EP0242888A3 (en) Stabilized liquid herbicidal composition and process for its preparation
PT79830B (en) Process for the preparation of di-hydropropiridinic anti-ischemic and anti-hypertensive agents
GB2202243B (en) A method for treating a surface of a combustible material
EP0193788A3 (en) Method of controlling an amount of injected fuel
GB2169106B (en) Method of controlling a fuel injection apparatus
EP0182173A3 (en) Monocyclic bis-oxethylsulfonyl-anilines and process for their preparation
EP0167206A3 (en) Synthetic fraipontite and process for preparation thereof
DE3571796D1 (en) A method for the transportation of a particulate material at controlled rate
EP0344813A3 (en) Method of melting superconductive material
PT79841B (en) Process and device for the manufacture of piled thread
CS514587A1 (en) Method of lignocellulosic material prehydrolysis
BG44002A1 (en) Superconductive material and method for its manufacture

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee