JPS6187338U - - Google Patents
Info
- Publication number
- JPS6187338U JPS6187338U JP17268884U JP17268884U JPS6187338U JP S6187338 U JPS6187338 U JP S6187338U JP 17268884 U JP17268884 U JP 17268884U JP 17268884 U JP17268884 U JP 17268884U JP S6187338 U JPS6187338 U JP S6187338U
- Authority
- JP
- Japan
- Prior art keywords
- stem
- pressure
- semiconductor chip
- opening
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第1図は本考案の一実施例に係る半導体圧力セ
ンサの構成を示す断面図、第2図は第1図のセン
サの平面構成を示す図、第3図は従来の半導体圧
力センサの構成を示す断面図、第4図は第3図の
センサの平面構成を示す図である。
21…ステム、23…圧力導入管、24…大気
開放口、25…ダイヤフラム部、26…シリコン
チツプ、28…リードピン、29…蓋体。
FIG. 1 is a sectional view showing the configuration of a semiconductor pressure sensor according to an embodiment of the present invention, FIG. 2 is a diagram showing the planar configuration of the sensor in FIG. 1, and FIG. The sectional view shown in FIG. 4 is a diagram showing the planar configuration of the sensor shown in FIG. 3. 21...Stem, 23...Pressure introduction pipe, 24...Atmospheric opening, 25...Diaphragm portion, 26...Silicon chip, 28...Lead pin, 29...Lid body.
Claims (1)
口部と、前記ステムの前記開口部に下方に向けて
設けられた圧力導入管と、前記ステムの前記開口
部から離れた位置に設けられた大気開放口と、中
央部に前記圧力導入管内の圧力と大気圧との差圧
検出用のダイヤフラム部を有し、前記ステムの前
記大気開放口部に固定された半導体チツプと、前
記ステム上に取付けられ、前記半導体チツプを覆
う蓋体とを具備したことを特徴とする半導体圧力
センサ。 a stem, an opening provided in the center of the stem, a pressure introduction pipe provided downward to the opening of the stem, and an atmosphere provided at a position remote from the opening of the stem. a semiconductor chip having an open port and a diaphragm portion in the center for detecting a differential pressure between the pressure in the pressure introduction pipe and atmospheric pressure, and fixed to the atmosphere open port of the stem; and a semiconductor chip mounted on the stem. 1. A semiconductor pressure sensor comprising: a lid for covering the semiconductor chip; and a lid for covering the semiconductor chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17268884U JPS6187338U (en) | 1984-11-14 | 1984-11-14 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17268884U JPS6187338U (en) | 1984-11-14 | 1984-11-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6187338U true JPS6187338U (en) | 1986-06-07 |
Family
ID=30730350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17268884U Pending JPS6187338U (en) | 1984-11-14 | 1984-11-14 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6187338U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012233872A (en) * | 2010-12-13 | 2012-11-29 | Panasonic Corp | Semiconductor pressure sensor and manufacturing method thereof |
US11901172B2 (en) | 2014-04-01 | 2024-02-13 | Ev Group E. Thallner Gmbh | Method and device for the surface treatment of substrates |
-
1984
- 1984-11-14 JP JP17268884U patent/JPS6187338U/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012233872A (en) * | 2010-12-13 | 2012-11-29 | Panasonic Corp | Semiconductor pressure sensor and manufacturing method thereof |
US11901172B2 (en) | 2014-04-01 | 2024-02-13 | Ev Group E. Thallner Gmbh | Method and device for the surface treatment of substrates |
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