JPS6186494A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPS6186494A
JPS6186494A JP59209474A JP20947484A JPS6186494A JP S6186494 A JPS6186494 A JP S6186494A JP 59209474 A JP59209474 A JP 59209474A JP 20947484 A JP20947484 A JP 20947484A JP S6186494 A JPS6186494 A JP S6186494A
Authority
JP
Japan
Prior art keywords
bell jar
base plate
susceptor
cooling fluid
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59209474A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0249279B2 (enExample
Inventor
Masayuki Nozawa
野沢　昌幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP59209474A priority Critical patent/JPS6186494A/ja
Publication of JPS6186494A publication Critical patent/JPS6186494A/ja
Publication of JPH0249279B2 publication Critical patent/JPH0249279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59209474A 1984-10-05 1984-10-05 気相成長装置 Granted JPS6186494A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59209474A JPS6186494A (ja) 1984-10-05 1984-10-05 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59209474A JPS6186494A (ja) 1984-10-05 1984-10-05 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6186494A true JPS6186494A (ja) 1986-05-01
JPH0249279B2 JPH0249279B2 (enExample) 1990-10-29

Family

ID=16573448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59209474A Granted JPS6186494A (ja) 1984-10-05 1984-10-05 気相成長装置

Country Status (1)

Country Link
JP (1) JPS6186494A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318079A (ja) * 1986-07-10 1988-01-25 Toshiba Corp 薄膜形成方法及び装置
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318079A (ja) * 1986-07-10 1988-01-25 Toshiba Corp 薄膜形成方法及び装置
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor

Also Published As

Publication number Publication date
JPH0249279B2 (enExample) 1990-10-29

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