JPS6185176U - - Google Patents

Info

Publication number
JPS6185176U
JPS6185176U JP16968984U JP16968984U JPS6185176U JP S6185176 U JPS6185176 U JP S6185176U JP 16968984 U JP16968984 U JP 16968984U JP 16968984 U JP16968984 U JP 16968984U JP S6185176 U JPS6185176 U JP S6185176U
Authority
JP
Japan
Prior art keywords
laser diode
detection means
temperature detection
bias current
explaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16968984U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16968984U priority Critical patent/JPS6185176U/ja
Publication of JPS6185176U publication Critical patent/JPS6185176U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の構成を説明するためのブロ
ツク図、第2図はこの考案の一実施例を説明する
ための接続図、第3図はこの考案の動作を説明す
るためのグラフ、第4図はこの考案の変形実施例
を説明するための接続図、第5図は従来技術を説
明するための接続図、第6図は従来技術の動作を
説明するためのグラフである。 1:レーザダイオード、3:駆動回路、4:入
力信号、11:温度検出手段、12:バイアス電
流制御回路、13:温度検出手段を構成するダイ
オード、14:演算増幅器、15:可変インピー
ダンス素子、16:共通電位点、17:ドライバ
Figure 1 is a block diagram for explaining the configuration of this invention, Figure 2 is a connection diagram for explaining an embodiment of this invention, Figure 3 is a graph for explaining the operation of this invention, and Figure 3 is a graph for explaining the operation of this invention. FIG. 4 is a connection diagram for explaining a modified embodiment of this invention, FIG. 5 is a connection diagram for explaining the prior art, and FIG. 6 is a graph for explaining the operation of the prior art. 1: Laser diode, 3: Drive circuit, 4: Input signal, 11: Temperature detection means, 12: Bias current control circuit, 13: Diode constituting temperature detection means, 14: Operational amplifier, 15: Variable impedance element, 16 : Common potential point, 17: Driver.

Claims (1)

【実用新案登録請求の範囲】 A レーザダイオードを入力信号によつてオン、
オフ駆動する駆動回路と、 B 上記レーザダイオードの温度を検出する温度
検出手段と、 C この温度検出手段によつて検出したレーザダ
イオードのバイアス電流を制御するバイアス電流
制御回路と、 から成るレーザダイオード駆動装置。
[Claims for Utility Model Registration] A. Turn on the laser diode by an input signal,
A laser diode drive comprising: a drive circuit for off-driving; B a temperature detection means for detecting the temperature of the laser diode; and C a bias current control circuit for controlling the bias current of the laser diode detected by the temperature detection means. Device.
JP16968984U 1984-11-07 1984-11-07 Pending JPS6185176U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16968984U JPS6185176U (en) 1984-11-07 1984-11-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16968984U JPS6185176U (en) 1984-11-07 1984-11-07

Publications (1)

Publication Number Publication Date
JPS6185176U true JPS6185176U (en) 1986-06-04

Family

ID=30727407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16968984U Pending JPS6185176U (en) 1984-11-07 1984-11-07

Country Status (1)

Country Link
JP (1) JPS6185176U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123956A (en) * 2008-11-20 2010-06-03 Sick Ag Photoelectric sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144892A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Drive circuit for light emitting semiconductor element
JPS56103488A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Driving circuit of semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144892A (en) * 1978-05-04 1979-11-12 Mitsubishi Electric Corp Drive circuit for light emitting semiconductor element
JPS56103488A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Driving circuit of semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123956A (en) * 2008-11-20 2010-06-03 Sick Ag Photoelectric sensor

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