JPS6184908A - Bias circuit in high frequency circuit - Google Patents
Bias circuit in high frequency circuitInfo
- Publication number
- JPS6184908A JPS6184908A JP59207618A JP20761884A JPS6184908A JP S6184908 A JPS6184908 A JP S6184908A JP 59207618 A JP59207618 A JP 59207618A JP 20761884 A JP20761884 A JP 20761884A JP S6184908 A JPS6184908 A JP S6184908A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- bias
- emitter
- stage
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
(,1)技術分野
この発明は高周波増幅回路等の高周波回路にハ・イアス
ミ圧を供給するバイアス回路に関し、特に電流−電圧変
換によって形成されたバイアス電圧中に混入するノイズ
を除去するローパスフィルタ回路を含むバイアス回路の
改良に関する。Detailed Description of the Invention (1) Technical Field The present invention relates to a bias circuit that supplies high-intensity voltage to a high-frequency circuit such as a high-frequency amplifier circuit, and particularly relates to a bias circuit that supplies high-intensity voltage to a high-frequency circuit such as a high-frequency amplifier circuit. This invention relates to improvements in bias circuits including low-pass filter circuits that remove noise.
(bl従来技術とその欠点
高周波増幅回路等の高周波回路において、所定のハ・イ
アスミ圧を形成するには、−Cにトランジスタ等を含む
定電流源から供給される電流を電圧変換し、その電圧を
ローパスフィルタ回路を通して得るようにする。電流−
電圧変換して形成した電圧、をローパスフィルタ回路を
通すのは、電流源回路等に含まれるトランジスタ等が発
生する広範囲スペクトルのノイズ(熱雑音やショットM
音等に起因する)を除去し、高周波信号にバイアス回路
を得てノイズが混入しないようにするためである。第4
図はCR時定数によるローパスフィルタ回路を含む従来
のバイアス回路の回路図である。(bl Prior Art and Its Disadvantages) In order to form a predetermined high-asuminum pressure in a high-frequency circuit such as a high-frequency amplifier circuit, the current supplied from a constant current source including a transistor or the like is converted to a voltage at -C, and the voltage is is obtained through a low-pass filter circuit.The current −
The voltage formed by voltage conversion is passed through a low-pass filter circuit to avoid wide-spectrum noise (thermal noise, shot M
This is to remove noise (caused by sound, etc.) and to provide a bias circuit to the high frequency signal to prevent noise from being mixed in. Fourth
The figure is a circuit diagram of a conventional bias circuit including a low-pass filter circuit using a CR time constant.
図において、ダイオードDはバイアス出力端子Kに接続
される図示しない高周波回路の温度係数とバイアス回路
回路の温度係数とを合わせるためのものである。ダイオ
ードD、このダイオードDに直列に接続される抵抗R1
およびコンデンサCIは初段のローパスフィルタ回路を
構成する。抵抗R1はフィルタ要素として作用するとと
もに、電流源−[、から流入する電流iを電流−電圧変
換する。In the figure, a diode D is used to match the temperature coefficient of a high frequency circuit (not shown) connected to the bias output terminal K with the temperature coefficient of the bias circuit. Diode D, resistor R1 connected in series with this diode D
and capacitor CI constitute a first-stage low-pass filter circuit. The resistor R1 acts as a filter element and performs current-to-voltage conversion on the current i flowing from the current source -[,.
抵抗R2およびコンデンサC2は後段のローパスフィル
タ回路を構成する。この回路において、抵抗R1に電流
源■。から電流iが流入するとコンデンサC1の両端に
バイアス電圧が形成され、二段のローパスフィルタ回路
によってノイスが除去され、端子Kにバイアス電圧が出
力する。Resistor R2 and capacitor C2 constitute a low-pass filter circuit at the subsequent stage. In this circuit, a current source ■ is connected to the resistor R1. When a current i flows into the capacitor C1, a bias voltage is formed across the capacitor C1, noise is removed by a two-stage low-pass filter circuit, and a bias voltage is output to the terminal K.
しかし、上記のバイアス回路では、バイアス電流i、が
大きく変化すると抵抗R2による電圧降下分も大きく変
わり、端子Kに供給されるバイアス電圧の変動が非常に
大きくなる不都合があった。またこの変動分をできるだ
け少なくするために抵抗R2を小さくすると後段のフィ
ルタ回路による効果が薄れてしまい、十分なフィルタ特
性を得ることができない欠点があった。However, in the above-mentioned bias circuit, when the bias current i changes greatly, the voltage drop across the resistor R2 also changes greatly, and the bias voltage supplied to the terminal K has a problem of extremely large fluctuations. Furthermore, if the resistor R2 is made small in order to minimize this variation, the effect of the filter circuit at the subsequent stage will be weakened, resulting in the disadvantage that sufficient filter characteristics cannot be obtained.
(C)発明の目的
この発明の目的は、簡単な構成で後段のローパスフィル
タ回路のCR時定数を大きくでき、しかもバイアス電流
が大きく変化しても安定したバイアス電圧を出力するこ
とのできる高周波回路におけるバイアス回路を提供する
ことにある。(C) Purpose of the Invention The purpose of the present invention is to provide a high-frequency circuit that can increase the CR time constant of the low-pass filter circuit in the subsequent stage with a simple configuration, and can output a stable bias voltage even when the bias current changes greatly. An object of the present invention is to provide a bias circuit for
fd1発明の構成および効果
この発明は、後段のフィルタ回路を、初段のフィルタ出
力端子とバイアス出力端子間にベース。fd1 Structure and Effects of the Invention The present invention is based on a second stage filter circuit between a first stage filter output terminal and a bias output terminal.
エミッタを接続したエミ・ツタホロワトランジスタと、
このトランジスタのエミッタに接続したコンデンサ′と
で構成したことを特徴とする。An emitter follower transistor with an emitter connected,
It is characterized in that it is constructed with a capacitor ' connected to the emitter of this transistor.
上記のように構成することによってこの発明によれば、
従来のCR時定数回路の抵抗Rに代えてトランジスター
・個を使用するだけでよいため、回路構成を複雑化する
ことなく、大きなCR時定数を(:)るごとかでき、ま
たバイアス電圧の安定化を実現することができる。According to this invention, by configuring as described above,
Because it is only necessary to use a transistor in place of the resistor R in the conventional CR time constant circuit, a large CR time constant can be achieved without complicating the circuit configuration, and the bias voltage can be stabilized. can be realized.
te+実施例
第1図はこの発明の実施例であるバイアス回路の回路図
である。構成において、第4図に示す従来のバイアス回
路と相違する部分は、後段のフィルタ回路の抵抗R2を
エミッタホロワ接続したトランジスタQlに置き換えた
点である。。このように構成するごとによって、初段の
フィルタ回路から後段のフィルタ回路を見た場合、入力
インピーダンスは極めて高くなり、その結果時定数も非
常に太き(なる。またバイアス電流18が大きく変化し
てもトランジスタQ1のベース−エミッタ間電圧V、は
それ程度化しないため、端子Kに出方するバイアス電圧
は殆ど変化することがない。第2図は上記のバイアス回
路を差動増幅器に接続した場合の回路例を示している。te+ Embodiment FIG. 1 is a circuit diagram of a bias circuit according to an embodiment of the present invention. The difference in configuration from the conventional bias circuit shown in FIG. 4 is that the resistor R2 in the filter circuit at the subsequent stage is replaced with a transistor Ql connected in an emitter follower manner. . With each of these configurations, when looking from the first-stage filter circuit to the subsequent-stage filter circuit, the input impedance becomes extremely high, and as a result, the time constant becomes extremely thick (also, the bias current 18 changes greatly). Since the base-emitter voltage V of transistor Q1 does not change to that extent, the bias voltage appearing at terminal K hardly changes.Figure 2 shows the case where the above bias circuit is connected to a differential amplifier. An example of the circuit is shown.
第3図はこの発明の応用例を示す図である。上記第1図
に示す本発明の実施例と相違する部分は、エミッタホロ
ワトランジスタQ1を定電流接続したデプ1.・ノシゴ
ンタイプのMO,Sl−ランジスタQ2に置き換えた点
である。この回路では、トランジスタQ2が定電流動作
するためにインピーダンスが極めて大きくなる。また定
電流のためにバイアス電流Inも大きく変化することが
なく、その結果、電圧変動も殆ど生じることがない。尚
、MOSトランジスタQ2に換えて定電流動作するピン
チ抵抗を使用するようにしてもよい。FIG. 3 is a diagram showing an example of application of the present invention. The difference from the embodiment of the present invention shown in FIG. 1 is that the emitter follower transistor Q1 is connected with a constant current. - Replaced with Noshigon type MO, Sl-transistor Q2. In this circuit, the impedance becomes extremely large because the transistor Q2 operates at a constant current. Furthermore, since the current is constant, the bias current In does not change significantly, and as a result, almost no voltage fluctuation occurs. Note that a pinch resistor that operates at a constant current may be used in place of the MOS transistor Q2.
第1図はこの発明の実施例であるバイアス回路の回路図
である。第2図は同バイアス回路を差動増幅器に接続し
た場合の回路例を示す図である。
また第3図はこの発明の応用例を示し7、第4図は従来
のバイアス回路の回路図を示す。
R1’、C1−初段のローパスフィルタ回路、Ql、C
2−a段のローパスフィルタ回路、Ql−エミッタホロ
ワトランジスタ。FIG. 1 is a circuit diagram of a bias circuit according to an embodiment of the present invention. FIG. 2 is a diagram showing an example of a circuit when the same bias circuit is connected to a differential amplifier. Further, FIG. 3 shows an application example of the present invention 7, and FIG. 4 shows a circuit diagram of a conventional bias circuit. R1', C1-first stage low-pass filter circuit, Ql, C
2-A stage low-pass filter circuit, Ql-emitter follower transistor.
Claims (1)
電圧を二段に接続されたCR時定数によるローパスフィ
ルタ回路を通してバイアス電圧として出力する高周波回
路におけるバイアス回路において、 後段のフィルタ回路を、初段のフィルタ出力端子とバイ
アス出力端子間にベース、エミッタを接続したエミッタ
ホロワトランジスタと、このトランジスタのエミッタに
接続したコンデンサとで構成したことを特徴とする高周
波回路におけるバイアス回路。(1) In a bias circuit in a high frequency circuit that converts a current controlled by a semiconductor element into a voltage and outputs the voltage as a bias voltage through a low-pass filter circuit with a CR time constant connected in two stages, the filter circuit in the subsequent stage is 1. A bias circuit for a high frequency circuit, comprising an emitter follower transistor whose base and emitter are connected between a first-stage filter output terminal and a bias output terminal, and a capacitor connected to the emitter of this transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59207618A JPS6184908A (en) | 1984-10-02 | 1984-10-02 | Bias circuit in high frequency circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59207618A JPS6184908A (en) | 1984-10-02 | 1984-10-02 | Bias circuit in high frequency circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6184908A true JPS6184908A (en) | 1986-04-30 |
Family
ID=16542770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59207618A Pending JPS6184908A (en) | 1984-10-02 | 1984-10-02 | Bias circuit in high frequency circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6184908A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5241284A (en) * | 1990-02-16 | 1993-08-31 | Nokia Mobile Phones Ltd. | Circuit arrangement for connecting RF amplifier and supply voltage filter |
JP2007508755A (en) * | 2003-10-14 | 2007-04-05 | オーディオアシクス エー/エス | Microphone preamplifier |
JP2013183359A (en) * | 2012-03-02 | 2013-09-12 | Sumitomo Electric Ind Ltd | Differential amplifier circuit and optical receiver device |
CN103684287A (en) * | 2012-09-11 | 2014-03-26 | 三菱电机株式会社 | Power amplifier |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5314541A (en) * | 1976-07-26 | 1978-02-09 | Matsushita Electric Ind Co Ltd | Bias circuit |
-
1984
- 1984-10-02 JP JP59207618A patent/JPS6184908A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5314541A (en) * | 1976-07-26 | 1978-02-09 | Matsushita Electric Ind Co Ltd | Bias circuit |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5241284A (en) * | 1990-02-16 | 1993-08-31 | Nokia Mobile Phones Ltd. | Circuit arrangement for connecting RF amplifier and supply voltage filter |
JP2007508755A (en) * | 2003-10-14 | 2007-04-05 | オーディオアシクス エー/エス | Microphone preamplifier |
JP2013183359A (en) * | 2012-03-02 | 2013-09-12 | Sumitomo Electric Ind Ltd | Differential amplifier circuit and optical receiver device |
CN103684287A (en) * | 2012-09-11 | 2014-03-26 | 三菱电机株式会社 | Power amplifier |
JP2014057154A (en) * | 2012-09-11 | 2014-03-27 | Mitsubishi Electric Corp | Power amplifier |
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